JPS57106065A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS57106065A JPS57106065A JP18338180A JP18338180A JPS57106065A JP S57106065 A JPS57106065 A JP S57106065A JP 18338180 A JP18338180 A JP 18338180A JP 18338180 A JP18338180 A JP 18338180A JP S57106065 A JPS57106065 A JP S57106065A
- Authority
- JP
- Japan
- Prior art keywords
- film
- sio2
- polycrystalline
- contact
- resistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 10
- 229910052681 coesite Inorganic materials 0.000 abstract 5
- 229910052906 cristobalite Inorganic materials 0.000 abstract 5
- 239000000377 silicon dioxide Substances 0.000 abstract 5
- 235000012239 silicon dioxide Nutrition 0.000 abstract 5
- 229910052682 stishovite Inorganic materials 0.000 abstract 5
- 229910052905 tridymite Inorganic materials 0.000 abstract 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 3
- 238000005530 etching Methods 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 238000010438 heat treatment Methods 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 230000001681 protective effect Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0688—Integrated circuits having a three-dimensional layout
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
PURPOSE:To enable to obtain a polycrystalline Si resistor of a semiconductor device having high sheet resistance with high precision by a method wherein the whole of the lower face of the polycrystalline Si resistor is made to come in contact with the upper face of an oxide film formed on an Si substrate. CONSTITUTION:The SiO2 film 42 is formed on the Si substrate 43, and the polycrystalline Si film 41 is formed on the film 42 thereof. Moreover an SiO2 film 44 is formed coming in contact with the upper face and the sides of the film 41, and an SiO2 film containing impurity of B, P, etc., is formed on the film 44. The film 41 is covered with the film 44 by this way before etching of a gate oxide film, etc., is to be performed, and after then, when etching of the gate oxide film, etc., is performed reserving the part of the film 41, because the part of the film 41 is not etched, structure wherein the whole of the lower face of the film 41 is coming in contact with the SiO2 film of one kind can be obtained. The film 44 formed on structure having no rip by this way has the faculty being sufficient as a protective film, and even when an SiO2 film containing B or P is formed thereon and heat treatment is performed, the resistance value of the film 41 is not affected.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18338180A JPS57106065A (en) | 1980-12-23 | 1980-12-23 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18338180A JPS57106065A (en) | 1980-12-23 | 1980-12-23 | Semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS57106065A true JPS57106065A (en) | 1982-07-01 |
Family
ID=16134767
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP18338180A Pending JPS57106065A (en) | 1980-12-23 | 1980-12-23 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57106065A (en) |
-
1980
- 1980-12-23 JP JP18338180A patent/JPS57106065A/en active Pending
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