JPS5750469A - Manufacture of semiconductor integrated circuit - Google Patents
Manufacture of semiconductor integrated circuitInfo
- Publication number
- JPS5750469A JPS5750469A JP55125772A JP12577280A JPS5750469A JP S5750469 A JPS5750469 A JP S5750469A JP 55125772 A JP55125772 A JP 55125772A JP 12577280 A JP12577280 A JP 12577280A JP S5750469 A JPS5750469 A JP S5750469A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- oxide film
- film
- wiring layer
- field oxide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000000758 substrate Substances 0.000 abstract 3
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 229910020968 MoSi2 Inorganic materials 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 239000012212 insulator Substances 0.000 abstract 1
- 238000002844 melting Methods 0.000 abstract 1
- 230000008018 melting Effects 0.000 abstract 1
- 239000007769 metal material Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 230000003647 oxidation Effects 0.000 abstract 1
- 238000007254 oxidation reaction Methods 0.000 abstract 1
- 238000001259 photo etching Methods 0.000 abstract 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
Landscapes
- Local Oxidation Of Silicon (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
PURPOSE:To obtain easily a multilayer wiring, by epitaxially growing a semiconductor layer on an insulator substrate provided with the first wiring layer made of high- melting point metal material, forming a field oxide film and forming the second wiring layer thereon. CONSTITUTION:An MoSi2 film is deposited on a sapphier substrate 21 and photoetched to form a first wiring layer 22. A silicon epitaxial layer is formed over the whole surface of the sapphier substrate 21, and with an Si3N4 film as a mask, a selective oxidation is performed to form a monocrystalline island region and a field oxide film 26. Next, the Si3N4 film is removed, and a thin oxide film is formed. Then, a polycrystalline silicon layer is formed, and a gate electrode 29 and a second wiring layer 30 are formed on the field oxide film 26 by photoetching process. Then, N<+> type source and drain regions 32, 33 are formed, an SiO2 layer 34 is deposited and Al wirings 35, 36 are formed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55125772A JPS5750469A (en) | 1980-09-10 | 1980-09-10 | Manufacture of semiconductor integrated circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55125772A JPS5750469A (en) | 1980-09-10 | 1980-09-10 | Manufacture of semiconductor integrated circuit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5750469A true JPS5750469A (en) | 1982-03-24 |
Family
ID=14918444
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP55125772A Pending JPS5750469A (en) | 1980-09-10 | 1980-09-10 | Manufacture of semiconductor integrated circuit |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5750469A (en) |
-
1980
- 1980-09-10 JP JP55125772A patent/JPS5750469A/en active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| GB1381602A (en) | Integrated circuit structure and method for making integrated circuit structure | |
| JPS54142981A (en) | Manufacture of insulation gate type semiconductor device | |
| JPS55138877A (en) | Method of fabricating semiconductor device | |
| JPS5750469A (en) | Manufacture of semiconductor integrated circuit | |
| JPS5617071A (en) | Semiconductor device | |
| JPS54107279A (en) | Semiconductor device | |
| JPS572519A (en) | Manufacture of semiconductor device | |
| JPS5687339A (en) | Manufacture of semiconductor device | |
| JPS55108772A (en) | Semiconductor integrated circuit device | |
| JPS5522879A (en) | Insulation gate type field effect semiconductor device | |
| JPS5735368A (en) | Manufacture of semiconductor device | |
| JPS54117690A (en) | Production of semiconductor device | |
| JPS5443683A (en) | Production of transistor | |
| JPS5660015A (en) | Manufacture of semiconductor device | |
| JPS5447493A (en) | Semiconductor integrated circuit device and production of the same | |
| JPS5619669A (en) | Semiconductor device and manufacture thereof | |
| JPS57199236A (en) | Manufacture of oxide film isolation semiconductor device | |
| JPS5522878A (en) | Insulation gate type field effect semiconductor device | |
| JPS5454584A (en) | Production of insb mis structure and device | |
| JPS55132053A (en) | Manufacture of semiconductor device | |
| JPS54142982A (en) | Field effect semiconductor device of junction type and its manufacture | |
| JPS5679446A (en) | Production of semiconductor device | |
| JPS56158455A (en) | Semiconductor device | |
| JPS54137983A (en) | Manufacture of mos semiconductor device | |
| JPS566448A (en) | Mos type integrated circuit device |