JPS5488074A - Manufacture for semiconductor device - Google Patents
Manufacture for semiconductor deviceInfo
- Publication number
- JPS5488074A JPS5488074A JP15581577A JP15581577A JPS5488074A JP S5488074 A JPS5488074 A JP S5488074A JP 15581577 A JP15581577 A JP 15581577A JP 15581577 A JP15581577 A JP 15581577A JP S5488074 A JPS5488074 A JP S5488074A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- film
- unnecessary part
- electrode
- ethcing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/11—Manufacturing methods
Landscapes
- Electrodes Of Semiconductors (AREA)
Abstract
PURPOSE: To avoid the effect on other parts, by forming the projection electrode on the semiconductor substrate via the Cr layer being the contact metal layer and by using the spcific ethcing solution when the unnecessary part of Cr layer is removed with ethcing.
CONSTITUTION: The P type region 4 is formed with selective diffusion on the N type Si substrate 1, the entire surface is covered with the SiO2 film and the window 3 for electrode forming is made on the film 2 on the region 4. Next, the Cr layer 5 being the contact metallic layer is evaporated on all the surface and the insertion metallic layer 6 of Cu or Ni is evaporated on it, and the rear electrode 7 is provided at the back of the substrate 1. After that, the unnecessary part of the layer 6 is removed by photo etching, the Cr layer 5 is protected by coating the photo resist film 8, and the Ag projection electrode 9 of semi-sphere is formed on the layer 6 with electrolytic plating. Further, the film 8 is removed and the unnecessary part of the Cr layer 5 with etching, by using hydrochloric acid water solution in which the concentration is 6 to 12 normality. Thus, Cr and be treated without masking of photo resist, increasing the element performance.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15581577A JPS5488074A (en) | 1977-12-24 | 1977-12-24 | Manufacture for semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15581577A JPS5488074A (en) | 1977-12-24 | 1977-12-24 | Manufacture for semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5488074A true JPS5488074A (en) | 1979-07-12 |
Family
ID=15614070
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15581577A Pending JPS5488074A (en) | 1977-12-24 | 1977-12-24 | Manufacture for semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5488074A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60253824A (en) * | 1984-05-30 | 1985-12-14 | Toshiba Corp | Thermopile |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4834453A (en) * | 1971-09-07 | 1973-05-18 | ||
| JPS5126469A (en) * | 1974-08-29 | 1976-03-04 | Tokyo Shibaura Electric Co |
-
1977
- 1977-12-24 JP JP15581577A patent/JPS5488074A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4834453A (en) * | 1971-09-07 | 1973-05-18 | ||
| JPS5126469A (en) * | 1974-08-29 | 1976-03-04 | Tokyo Shibaura Electric Co |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60253824A (en) * | 1984-05-30 | 1985-12-14 | Toshiba Corp | Thermopile |
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