JPS5488076A - Manufacture for semiconductor device - Google Patents
Manufacture for semiconductor deviceInfo
- Publication number
- JPS5488076A JPS5488076A JP15581877A JP15581877A JPS5488076A JP S5488076 A JPS5488076 A JP S5488076A JP 15581877 A JP15581877 A JP 15581877A JP 15581877 A JP15581877 A JP 15581877A JP S5488076 A JPS5488076 A JP S5488076A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- film
- bump
- substrate
- inserted metal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/11—Manufacturing methods
Landscapes
- Electrodes Of Semiconductors (AREA)
Abstract
PURPOSE: To aviod the occurrence of contamination of the surface, by providing the open hole on the semiconductor substrate through coating SiO2 film and Si3N4 film, evaporating the inserted metal and the contact metal after lamination, and forming Ag bump after etching them.
CONSTITUTION: On the Si substrate 1 on which the diffusion region 4 is formed, the SiO2 film 2 being the surface protection film is coated, and after that, it is covered with the Si3N4 film 3, and window is opened on the region 4 with photo etching. Next, the Cr layer 5 being the contact metal and the Au layer 6 of inserted metal are evaporated on the entire surface with evaporation, and the Cr layer 5' and the Au layer 6' being the rear electrodes are coated on the rear side of the substrate 1 with lamination. After that, the inserted metal layer 6 and the contact metal layer 5 are sequentially photo etched, and the Ag bump of a given shape is formed on the Au inserted metal layer 6 with plating. Thus, since no photo resist mask is used at bump formation, the surface is not contaminated.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15581877A JPS5488076A (en) | 1977-12-24 | 1977-12-24 | Manufacture for semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15581877A JPS5488076A (en) | 1977-12-24 | 1977-12-24 | Manufacture for semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5488076A true JPS5488076A (en) | 1979-07-12 |
Family
ID=15614140
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP15581877A Pending JPS5488076A (en) | 1977-12-24 | 1977-12-24 | Manufacture for semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5488076A (en) |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5055262A (en) * | 1973-09-12 | 1975-05-15 | ||
JPS5153143U (en) * | 1974-10-22 | 1976-04-22 | ||
JPS51105266A (en) * | 1975-03-13 | 1976-09-17 | New Nippon Electric Co | Handotaisochino seizohoho |
JPS5259576A (en) * | 1975-11-11 | 1977-05-17 | Nec Corp | Semiconductor device |
-
1977
- 1977-12-24 JP JP15581877A patent/JPS5488076A/en active Pending
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5055262A (en) * | 1973-09-12 | 1975-05-15 | ||
JPS5153143U (en) * | 1974-10-22 | 1976-04-22 | ||
JPS51105266A (en) * | 1975-03-13 | 1976-09-17 | New Nippon Electric Co | Handotaisochino seizohoho |
JPS5259576A (en) * | 1975-11-11 | 1977-05-17 | Nec Corp | Semiconductor device |
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