JPS54121669A - Manufacture of semiconductor element - Google Patents
Manufacture of semiconductor elementInfo
- Publication number
- JPS54121669A JPS54121669A JP2867678A JP2867678A JPS54121669A JP S54121669 A JPS54121669 A JP S54121669A JP 2867678 A JP2867678 A JP 2867678A JP 2867678 A JP2867678 A JP 2867678A JP S54121669 A JPS54121669 A JP S54121669A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- film
- electrode
- plating
- vamp
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/11—Manufacturing methods
Abstract
PURPOSE: To facilitate formation of the metal vamp electrode protruded over the surface of the semiconductor substrate by giving the heat treatment to the Sn plating layer coated on the surface of the Au vamp electrode before the unnecessary area of the foundation metal layer is removed by etching.
CONSTITUTION: Al wiring layer 3 is coated via SiO2 film 2 onto Si substrate 1 to which the active element, the passive element and the like are provided, and SiO2 film 4 is grown while exposing part of layer 3. Then Cr alloy layer 5 (foundation metal layer) along with Pd film 6 are deposited on the entire surface, and the both ends are covered with resist film 7. After this, Au vamp electrode 8 is formed through plating with use of film 7 as the mask, and furthermore Sn plating layer 9 to be used as the solder material layer is coated over electrode 8 by also plating. Then Au-Sn alloy layer 10 is formed on the surface of electrode 8 via the heat treatment, and film 7 is removed to etch away the unnecessary areas of 1st and 2nd foundation metal films 5 and 6. In such way, the area of the protruded electrode can be increased with reduced contact resistance.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2867678A JPS54121669A (en) | 1978-03-15 | 1978-03-15 | Manufacture of semiconductor element |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2867678A JPS54121669A (en) | 1978-03-15 | 1978-03-15 | Manufacture of semiconductor element |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS54121669A true JPS54121669A (en) | 1979-09-20 |
Family
ID=12255093
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2867678A Pending JPS54121669A (en) | 1978-03-15 | 1978-03-15 | Manufacture of semiconductor element |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS54121669A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60177654A (en) * | 1984-02-24 | 1985-09-11 | Hitachi Ltd | Electronic parts and manufacture thereof |
-
1978
- 1978-03-15 JP JP2867678A patent/JPS54121669A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60177654A (en) * | 1984-02-24 | 1985-09-11 | Hitachi Ltd | Electronic parts and manufacture thereof |
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