JPS5570029A - Etching method of silicon nitride film - Google Patents

Etching method of silicon nitride film

Info

Publication number
JPS5570029A
JPS5570029A JP14448878A JP14448878A JPS5570029A JP S5570029 A JPS5570029 A JP S5570029A JP 14448878 A JP14448878 A JP 14448878A JP 14448878 A JP14448878 A JP 14448878A JP S5570029 A JPS5570029 A JP S5570029A
Authority
JP
Japan
Prior art keywords
film
silicon nitride
nitride film
hole
etched
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14448878A
Other languages
Japanese (ja)
Inventor
Tatsuya Enomoto
Hiroji Harada
Hisao Yakushiji
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP14448878A priority Critical patent/JPS5570029A/en
Publication of JPS5570029A publication Critical patent/JPS5570029A/en
Pending legal-status Critical Current

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  • Weting (AREA)

Abstract

PURPOSE: To prevent breakage of a wire arranged through a hole at a silicon nitride film by implanting ion to the silicon nitride film, forming a mask on the film, etching the film to thereby reducing the angle of the opening at the etched film in its cross section.
CONSTITUTION: After a plasma CVD silicon nitride film 4 is formed on a substrate, ion 11 of Ar or the like is implanted on the entire surface of the film 4. After a photo resist 5 is coated as a mask on the film 4 except for the etched portion to be formed with a through hole 6, the film 4 is etched at the etched portion. Since the side 7 of the through hole 6 thus becomes rectilinear by the etching process and the angle α of the opening end 8 becomes larger than 90°C, it prevents breakage of a second layer wiring metal 9 formed after removing the photo resist 5, at the through hole due to its electromigration.
COPYRIGHT: (C)1980,JPO&Japio
JP14448878A 1978-11-21 1978-11-21 Etching method of silicon nitride film Pending JPS5570029A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14448878A JPS5570029A (en) 1978-11-21 1978-11-21 Etching method of silicon nitride film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14448878A JPS5570029A (en) 1978-11-21 1978-11-21 Etching method of silicon nitride film

Publications (1)

Publication Number Publication Date
JPS5570029A true JPS5570029A (en) 1980-05-27

Family

ID=15363484

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14448878A Pending JPS5570029A (en) 1978-11-21 1978-11-21 Etching method of silicon nitride film

Country Status (1)

Country Link
JP (1) JPS5570029A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0788160A3 (en) * 1996-02-05 1999-06-16 Matsushita Electronics Corporation Semiconductor device having a multi-layered wire structure
JP2011243657A (en) * 2010-05-14 2011-12-01 Mitsumi Electric Co Ltd Semiconductor device manufacturing method

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4880440A (en) * 1972-02-02 1973-10-27

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4880440A (en) * 1972-02-02 1973-10-27

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0788160A3 (en) * 1996-02-05 1999-06-16 Matsushita Electronics Corporation Semiconductor device having a multi-layered wire structure
JP2011243657A (en) * 2010-05-14 2011-12-01 Mitsumi Electric Co Ltd Semiconductor device manufacturing method

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