JPS5522829A - Manufacturing of semiconductor device - Google Patents
Manufacturing of semiconductor deviceInfo
- Publication number
- JPS5522829A JPS5522829A JP9521978A JP9521978A JPS5522829A JP S5522829 A JPS5522829 A JP S5522829A JP 9521978 A JP9521978 A JP 9521978A JP 9521978 A JP9521978 A JP 9521978A JP S5522829 A JPS5522829 A JP S5522829A
- Authority
- JP
- Japan
- Prior art keywords
- film
- films
- sio
- holes
- gate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
Abstract
PURPOSE: To improve the degree of integration density by effecting the positionings to form the contact holes of sourse, drain and gate for IGFET through the self- coordination at the same time.
CONSTITUTION: On a P-type Si substrate 1 coated are a thick field SiO film 2 and thin gate SiO2 film 3, all over which formed are a polycrystal Si film 4, Si3N4 film 5 and SiO2 film 6 in turn. Next, each regist film 7,8 and 9 is applied at the area for source, gate and drain contact hole respectively. The films 5 and 6 are etched through plasma etching under the masks of the regist films 7∼9 to leave Si3N4 films 5a∼5c on the film 4. After that, a SiO2 film 10 is grown on the film 4 under the masks of the films 5a∼5c and the films 5a and 5b are removed to form holes 12a and 12b through the film 4 therebeneath. Then, holes 13a and 13b connecting to the holes 12a and 12b are formed by etching to make the surface of the substrate exposed. To the exposed surface formed are a N-type source zone 14 and drain zone 15 through deffusion, to which leading out electrodes 18 and 19 are attached. Finally, a SiO2 film 17 is coated on the remained film 4.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9521978A JPS5522829A (en) | 1978-08-04 | 1978-08-04 | Manufacturing of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9521978A JPS5522829A (en) | 1978-08-04 | 1978-08-04 | Manufacturing of semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5522829A true JPS5522829A (en) | 1980-02-18 |
JPS626665B2 JPS626665B2 (en) | 1987-02-12 |
Family
ID=14131622
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP9521978A Granted JPS5522829A (en) | 1978-08-04 | 1978-08-04 | Manufacturing of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5522829A (en) |
-
1978
- 1978-08-04 JP JP9521978A patent/JPS5522829A/en active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS626665B2 (en) | 1987-02-12 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS57204133A (en) | Manufacture of semiconductor integrated circuit | |
JPS5522829A (en) | Manufacturing of semiconductor device | |
JPS5583267A (en) | Method of fabricating semiconductor device | |
JPS577972A (en) | Insulated gate type thin film transistor | |
JPS5661169A (en) | Preparation of compound semiconductor device | |
JPS5591138A (en) | Die forming of semiconductor device | |
JPS5533037A (en) | Manufacture of semiconductor device | |
JPS52124860A (en) | Electrode formation method for semiconductor devices | |
JPS5533051A (en) | Manufacture of semiconductor device | |
JPS54139486A (en) | Manufacture of semiconductor device | |
JPS5763863A (en) | Preparatio of semiconductor device | |
JPS6481226A (en) | Etching method | |
JPS55130140A (en) | Fabricating method of semiconductor device | |
JPS5544779A (en) | Producing method for mos semiconductor device | |
JPS5559775A (en) | Method of fabricating semiconductor device | |
JPS5544773A (en) | Producing method for insulative gate type semiconductor device | |
JPS5763859A (en) | Preparation of semiconductor device | |
JPS5599777A (en) | Manufacture of semiconductor device | |
JPS5459873A (en) | Production of semiconductor device | |
JPS5691476A (en) | Semiconductor | |
JPS55102269A (en) | Method of fabricating semiconductor device | |
JPS5587488A (en) | Production of semiconductor device | |
JPS5691475A (en) | Semiconductor | |
JPS56110229A (en) | Manufacture of semiconductor device | |
JPS5385166A (en) | Production of semiconductor device |