JPS5522829A - Manufacturing of semiconductor device - Google Patents

Manufacturing of semiconductor device

Info

Publication number
JPS5522829A
JPS5522829A JP9521978A JP9521978A JPS5522829A JP S5522829 A JPS5522829 A JP S5522829A JP 9521978 A JP9521978 A JP 9521978A JP 9521978 A JP9521978 A JP 9521978A JP S5522829 A JPS5522829 A JP S5522829A
Authority
JP
Japan
Prior art keywords
film
films
sio
holes
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP9521978A
Other languages
Japanese (ja)
Other versions
JPS626665B2 (en
Inventor
Shinichiro Yamamoto
Hideo Otsuka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CHIYOU LSI GIJUTSU KENKYU KUMIAI
CHO LSI GIJUTSU KENKYU KUMIAI
Original Assignee
CHIYOU LSI GIJUTSU KENKYU KUMIAI
CHO LSI GIJUTSU KENKYU KUMIAI
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CHIYOU LSI GIJUTSU KENKYU KUMIAI, CHO LSI GIJUTSU KENKYU KUMIAI filed Critical CHIYOU LSI GIJUTSU KENKYU KUMIAI
Priority to JP9521978A priority Critical patent/JPS5522829A/en
Publication of JPS5522829A publication Critical patent/JPS5522829A/en
Publication of JPS626665B2 publication Critical patent/JPS626665B2/ja
Granted legal-status Critical Current

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  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE: To improve the degree of integration density by effecting the positionings to form the contact holes of sourse, drain and gate for IGFET through the self- coordination at the same time.
CONSTITUTION: On a P-type Si substrate 1 coated are a thick field SiO film 2 and thin gate SiO2 film 3, all over which formed are a polycrystal Si film 4, Si3N4 film 5 and SiO2 film 6 in turn. Next, each regist film 7,8 and 9 is applied at the area for source, gate and drain contact hole respectively. The films 5 and 6 are etched through plasma etching under the masks of the regist films 7∼9 to leave Si3N4 films 5a∼5c on the film 4. After that, a SiO2 film 10 is grown on the film 4 under the masks of the films 5a∼5c and the films 5a and 5b are removed to form holes 12a and 12b through the film 4 therebeneath. Then, holes 13a and 13b connecting to the holes 12a and 12b are formed by etching to make the surface of the substrate exposed. To the exposed surface formed are a N-type source zone 14 and drain zone 15 through deffusion, to which leading out electrodes 18 and 19 are attached. Finally, a SiO2 film 17 is coated on the remained film 4.
COPYRIGHT: (C)1980,JPO&Japio
JP9521978A 1978-08-04 1978-08-04 Manufacturing of semiconductor device Granted JPS5522829A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9521978A JPS5522829A (en) 1978-08-04 1978-08-04 Manufacturing of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9521978A JPS5522829A (en) 1978-08-04 1978-08-04 Manufacturing of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5522829A true JPS5522829A (en) 1980-02-18
JPS626665B2 JPS626665B2 (en) 1987-02-12

Family

ID=14131622

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9521978A Granted JPS5522829A (en) 1978-08-04 1978-08-04 Manufacturing of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5522829A (en)

Also Published As

Publication number Publication date
JPS626665B2 (en) 1987-02-12

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