JPS57205955A - Ion implanting device - Google Patents

Ion implanting device

Info

Publication number
JPS57205955A
JPS57205955A JP9262981A JP9262981A JPS57205955A JP S57205955 A JPS57205955 A JP S57205955A JP 9262981 A JP9262981 A JP 9262981A JP 9262981 A JP9262981 A JP 9262981A JP S57205955 A JPS57205955 A JP S57205955A
Authority
JP
Japan
Prior art keywords
wafer
plate
base
carrier belt
implantation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP9262981A
Other languages
Japanese (ja)
Other versions
JPS637653B2 (en
Inventor
Tei Kawai
Tsuneo Hiramatsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NISSHIN HAIBORUTEEJI KK
Nissin High Voltage Co Ltd
Original Assignee
NISSHIN HAIBORUTEEJI KK
Nissin High Voltage Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NISSHIN HAIBORUTEEJI KK, Nissin High Voltage Co Ltd filed Critical NISSHIN HAIBORUTEEJI KK
Priority to JP9262981A priority Critical patent/JPS57205955A/en
Publication of JPS57205955A publication Critical patent/JPS57205955A/en
Publication of JPS637653B2 publication Critical patent/JPS637653B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)

Abstract

PURPOSE:To mass produce semiconductors having an excellent quality, without any fear of causing damage to a wafer, by sending a wafer which is to be subjected to implantation treatment to a given position by means of a carrier belt, which is used for carrying the said wafer into and out of a vacuum treatment chamber. CONSTITUTION:In a vacuum treatment chamber 1, when a wafer (W) is placed on a given position of a base-plate holder 2, a carrier belt 3 is stopped. At the same time, the chamber 1 is exhausted to a high vacuum (for examples, 10<-6>- 10<-7> Torr). Next, supporting axes 24 move downward so as to make the wafer (W) to be completely held between a holder base-plate 21 and a clamp plate 23 as illustrated in the figure. Next, a rotating axis 22 rotates in the (Y) direction, and the wafer (W), together with the holer base-plate 21, is rotated by about 90 degrees into an implantation position. Following that, ions traveling in the (Z) direction from an ion source, which is not illustrated in the figure, are poured into the wafer (W).
JP9262981A 1981-06-15 1981-06-15 Ion implanting device Granted JPS57205955A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9262981A JPS57205955A (en) 1981-06-15 1981-06-15 Ion implanting device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9262981A JPS57205955A (en) 1981-06-15 1981-06-15 Ion implanting device

Publications (2)

Publication Number Publication Date
JPS57205955A true JPS57205955A (en) 1982-12-17
JPS637653B2 JPS637653B2 (en) 1988-02-17

Family

ID=14059731

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9262981A Granted JPS57205955A (en) 1981-06-15 1981-06-15 Ion implanting device

Country Status (1)

Country Link
JP (1) JPS57205955A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61173445A (en) * 1985-01-28 1986-08-05 Tokyo Erekutoron Kk Wafer transport device of ion implanting device

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4914102A (en) * 1972-05-16 1974-02-07
JPS52149981A (en) * 1976-06-09 1977-12-13 Hitachi Ltd Wafer scanning device
JPS5487471A (en) * 1977-12-24 1979-07-11 Fuji Electric Co Ltd Manufacture of semiconductor device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4914102A (en) * 1972-05-16 1974-02-07
JPS52149981A (en) * 1976-06-09 1977-12-13 Hitachi Ltd Wafer scanning device
JPS5487471A (en) * 1977-12-24 1979-07-11 Fuji Electric Co Ltd Manufacture of semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61173445A (en) * 1985-01-28 1986-08-05 Tokyo Erekutoron Kk Wafer transport device of ion implanting device
JPH041989B2 (en) * 1985-01-28 1992-01-16

Also Published As

Publication number Publication date
JPS637653B2 (en) 1988-02-17

Similar Documents

Publication Publication Date Title
GB2066300B (en) Sputter coating apparatus for semiconductor wafers
EP0385707A3 (en) Ion implanter end station
JPS6424440A (en) Device for transferring and positioning flat-platelike object
EP0012911A3 (en) Device for the precise alignment of planar workpieces, e.g. semiconductor wafers
TW367530B (en) Multiple substrate processing apparatus for enhanced throughput
JPS57205955A (en) Ion implanting device
ES8800511A1 (en) Procedure for fabricating devices involving dry etching.
JPS5245874A (en) Transfer device of semiconductor substrate holding device
JPS54134973A (en) Sheet holding jig for semiconductor wafer
JPS6472533A (en) Manufacture of single crystal semiconductor substrate
JPS5341982A (en) Wafer holder for ion implantation processing
JPS6481154A (en) Ion implantation and device therefor
JPS5441665A (en) Manufacture for semiconductor device
FR2156511A1 (en) Semiconductor doping - process - by ion bombardment of dopant coating on semiconductor wafer
KR960001463Y1 (en) ñíñTYPE SUPPORT PIN FOR PREVENTING WAFER DAMAGE
JPS51116675A (en) Manufacturing method for a semiconductor device
JPS5258480A (en) Wafer pick-up device
JPS56130935A (en) Inspecting device
JPS5244162A (en) Method of processing semiconductor wafer
JPS5391580A (en) Manufacturing equipment for semiconductor device
JPS5317278A (en) Ion implantation apparatus for semiconductor single crystal wafers
JPS57145319A (en) Manufacturing device for semiconductor device
JPS52149968A (en) Heat treatment method of semiconductor wafers
JPS5232668A (en) Semiconductor waffer processing equipment
JPS52124869A (en) Treatment jig for semiconductor wafers