JPS57145319A - Manufacturing device for semiconductor device - Google Patents

Manufacturing device for semiconductor device

Info

Publication number
JPS57145319A
JPS57145319A JP3086681A JP3086681A JPS57145319A JP S57145319 A JPS57145319 A JP S57145319A JP 3086681 A JP3086681 A JP 3086681A JP 3086681 A JP3086681 A JP 3086681A JP S57145319 A JPS57145319 A JP S57145319A
Authority
JP
Japan
Prior art keywords
vapor deposition
vapor
wafer
planetarium
constitution
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3086681A
Other languages
Japanese (ja)
Inventor
Masahiko Nozaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP3086681A priority Critical patent/JPS57145319A/en
Publication of JPS57145319A publication Critical patent/JPS57145319A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Toxicology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Health & Medical Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE:To permit suitable implantation or irradiation to an object causing no step disconnection or the like by a method wherein a vapor deposited material is incidented vertically to wafer surface from a incidence source in the center of a globular shaped wafer receptacle. CONSTITUTION:A wafer 10 is attached to the inside of a globular shaped receptacle 11 (planetarium) and a vapor deposition source is placed at the center of the planetarium 11. As a resuLt, the vapor deposition material accommodated in a crucible 13 becomes normally subject to the vertical irradiation of the beam from the vapor deposition source 12. According to such a constitution, since the vertical irradiation by the beam can be performed against the wafer surface having a step difference, the vapor deposition material is vapor-deposited certainly to the corners of the stepped part and the step disconnection is not caused at all.
JP3086681A 1981-03-04 1981-03-04 Manufacturing device for semiconductor device Pending JPS57145319A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3086681A JPS57145319A (en) 1981-03-04 1981-03-04 Manufacturing device for semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3086681A JPS57145319A (en) 1981-03-04 1981-03-04 Manufacturing device for semiconductor device

Publications (1)

Publication Number Publication Date
JPS57145319A true JPS57145319A (en) 1982-09-08

Family

ID=12315644

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3086681A Pending JPS57145319A (en) 1981-03-04 1981-03-04 Manufacturing device for semiconductor device

Country Status (1)

Country Link
JP (1) JPS57145319A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62274642A (en) * 1986-05-22 1987-11-28 Mitsubishi Electric Corp Manufacture of semiconductor device
JPS63255356A (en) * 1987-04-10 1988-10-21 Canon Electronics Inc Formation of thin film

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62274642A (en) * 1986-05-22 1987-11-28 Mitsubishi Electric Corp Manufacture of semiconductor device
JPS63255356A (en) * 1987-04-10 1988-10-21 Canon Electronics Inc Formation of thin film

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