JPS5633818A - Method for ion implantation - Google Patents
Method for ion implantationInfo
- Publication number
- JPS5633818A JPS5633818A JP10989079A JP10989079A JPS5633818A JP S5633818 A JPS5633818 A JP S5633818A JP 10989079 A JP10989079 A JP 10989079A JP 10989079 A JP10989079 A JP 10989079A JP S5633818 A JPS5633818 A JP S5633818A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- implanted
- substrate
- beams
- ion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000005468 ion implantation Methods 0.000 title abstract 2
- 238000000034 method Methods 0.000 title 1
- 239000010409 thin film Substances 0.000 abstract 7
- 239000000758 substrate Substances 0.000 abstract 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 2
- 238000010884 ion-beam technique Methods 0.000 abstract 2
- 150000002500 ions Chemical class 0.000 abstract 2
- 239000004065 semiconductor Substances 0.000 abstract 2
- 229910052710 silicon Inorganic materials 0.000 abstract 2
- 239000010703 silicon Substances 0.000 abstract 2
- 239000000126 substance Substances 0.000 abstract 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
Landscapes
- Physics & Mathematics (AREA)
- High Energy & Nuclear Physics (AREA)
- Engineering & Computer Science (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physical Vapour Deposition (AREA)
Abstract
PURPOSE:To prevent the sticking of stray beams generated from built-up substances in the pipe of an ion implanting device to the surface of a semiconductor substrate by carrying out ion implantation through a thin film placed in parallel to the surface of the semiconductor substrate. CONSTITUTION:A thin film 1 is arranged before a silicon substrate 3 on which surface a mask substance of a required pattern is formed, and ion beams 4 are implanted to the silicon substrate 3 through this thin film 1. This thin film 1 is constructed of a polycrystalline silicon thin film 6 and quartz glass boares 5, 5' and 5'' which support the thin film, and ions are implanted moving this thin film 1 almost perpendicularly to the longer sides of a stripe. By so doing, the sticking of stray beams caused by the spattering of the implanted ion beams to the pipe wall, etc., which construct the inside of a vacuum system, to the surface of the substrate can be prevented.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10989079A JPS5633818A (en) | 1979-08-29 | 1979-08-29 | Method for ion implantation |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10989079A JPS5633818A (en) | 1979-08-29 | 1979-08-29 | Method for ion implantation |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5633818A true JPS5633818A (en) | 1981-04-04 |
Family
ID=14521743
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP10989079A Pending JPS5633818A (en) | 1979-08-29 | 1979-08-29 | Method for ion implantation |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5633818A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58186126A (en) * | 1982-04-23 | 1983-10-31 | Denki Kagaku Kogyo Kk | Thermal electron emitting cathode chip |
JPH0272535A (en) * | 1988-09-06 | 1990-03-12 | Ube Ind Ltd | Tip sharpening method for electron cathode material |
JP2018014486A (en) * | 2016-06-06 | 2018-01-25 | インフィネオン テクノロジーズ アーゲーInfineon Technologies Ag | Energy filter for processing power semiconductor device |
-
1979
- 1979-08-29 JP JP10989079A patent/JPS5633818A/en active Pending
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58186126A (en) * | 1982-04-23 | 1983-10-31 | Denki Kagaku Kogyo Kk | Thermal electron emitting cathode chip |
JPH0272535A (en) * | 1988-09-06 | 1990-03-12 | Ube Ind Ltd | Tip sharpening method for electron cathode material |
JP2018014486A (en) * | 2016-06-06 | 2018-01-25 | インフィネオン テクノロジーズ アーゲーInfineon Technologies Ag | Energy filter for processing power semiconductor device |
US10242840B2 (en) | 2016-06-06 | 2019-03-26 | Infineon Technologies Ag | Energy filter for processing a power semiconductor device |
US10403468B2 (en) | 2016-06-06 | 2019-09-03 | Infineon Technologies Ag | Energy filter for processing a power semiconductor device |
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