JPS54155777A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS54155777A JPS54155777A JP6476878A JP6476878A JPS54155777A JP S54155777 A JPS54155777 A JP S54155777A JP 6476878 A JP6476878 A JP 6476878A JP 6476878 A JP6476878 A JP 6476878A JP S54155777 A JPS54155777 A JP S54155777A
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- metal layers
- ohmic
- type
- ohmic metal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Weting (AREA)
Abstract
PURPOSE: To quicken the feedback of a defective product by providing one element at a wafer circumference part with ohmic metal layers and then by appreciating this before providing all semiconductor element formed on the semiconductor wafer with ohmic metal layers.
CONSTITUTION: Inside of the P-type layer of wafer 1 consisting of a N-type semiconductor substrate and the P-type layer, several N-type regions are formed and all covered with oxidized film 2 and window holes 3 is made in fixed regions. Next, at least one element at the circumference part of wafer 1 is provided with ohmic electrode layers 4c and 4d and ohmic metal layers 4 are bonded to all surfaces of remaining parts, namely, the surface of wafer 1 and film 2 exposed in window holes 3. Then, a sintering treatment is done and a check on electric characteristics such as a forward current is made by making use of metal layers 4c and 4d. At this time, when an excellent result is obtained, the reverse surface of wafer 1 is polished to a fixed thickness, the unneeded parts of metal layers 4 are removed to obtaine electrodes 4a and 4c, and electrode 5 is also provided to the reverse surface of wafer 1.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6476878A JPS54155777A (en) | 1978-05-29 | 1978-05-29 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6476878A JPS54155777A (en) | 1978-05-29 | 1978-05-29 | Manufacture of semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS54155777A true JPS54155777A (en) | 1979-12-08 |
| JPS617018B2 JPS617018B2 (en) | 1986-03-03 |
Family
ID=13267694
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6476878A Granted JPS54155777A (en) | 1978-05-29 | 1978-05-29 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS54155777A (en) |
-
1978
- 1978-05-29 JP JP6476878A patent/JPS54155777A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS617018B2 (en) | 1986-03-03 |
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