EP1052703A3 - Thin film Ib/IIIa/VIa compound semiconductor solar cell and method of production of such solar cell - Google Patents

Thin film Ib/IIIa/VIa compound semiconductor solar cell and method of production of such solar cell Download PDF

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Publication number
EP1052703A3
EP1052703A3 EP00109199A EP00109199A EP1052703A3 EP 1052703 A3 EP1052703 A3 EP 1052703A3 EP 00109199 A EP00109199 A EP 00109199A EP 00109199 A EP00109199 A EP 00109199A EP 1052703 A3 EP1052703 A3 EP 1052703A3
Authority
EP
European Patent Office
Prior art keywords
solar cell
iiia
thin film
production
compound semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP00109199A
Other languages
German (de)
French (fr)
Other versions
EP1052703B1 (en
EP1052703A2 (en
Inventor
Olaf Tober
Jürgen Dr. Penndorf
Michael Dr. Winkler
Klaus Prof. Dr. Jacobs
Thomas Dr. Koschack
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Odersun AG
Original Assignee
Ist-Institut fur Solartechnologien GmbH
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Publication date
Application filed by Ist-Institut fur Solartechnologien GmbH filed Critical Ist-Institut fur Solartechnologien GmbH
Publication of EP1052703A2 publication Critical patent/EP1052703A2/en
Publication of EP1052703A3 publication Critical patent/EP1052703A3/en
Application granted granted Critical
Publication of EP1052703B1 publication Critical patent/EP1052703B1/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type
    • H01L31/0749—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type including a AIBIIICVI compound, e.g. CdS/CulnSe2 [CIS] heterojunction solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
    • H01L31/0322—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
    • H01L31/03926—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate comprising a flexible substrate
    • H01L31/03928—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate comprising a flexible substrate including AIBIIICVI compound, e.g. CIS, CIGS deposited on metal or polymer foils
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Abstract

A thin film solar cell, with a back face electrode (4) of an intermetallic phase of the same group Ib and IIIa metals as tho used to form the absorber layer (5), is new. A Ib/IIIa/VIa compound semiconductor thin film solar cell has, between a p-type polycrystalline Ib/IIIa/VIa absorber layer and a substrate foil (1), a back face electrode (4) of an intermetallic phase of the same Ib and IIIa metals as those deposited form the absorber layer (5). An Independent claim is also included for production of the above thin film solar cell.
EP00109199A 1999-05-10 2000-05-09 Thin film Ib/IIIa/VIa compound semiconductor solar cell and method of production of such a solar cell Expired - Lifetime EP1052703B1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE19921515A DE19921515A1 (en) 1999-05-10 1999-05-10 Thin-film solar cell based on the Ia / IIIb / VIa compound semiconductors and process for their production
DE19921515 1999-05-10

Publications (3)

Publication Number Publication Date
EP1052703A2 EP1052703A2 (en) 2000-11-15
EP1052703A3 true EP1052703A3 (en) 2007-03-07
EP1052703B1 EP1052703B1 (en) 2011-03-16

Family

ID=7907592

Family Applications (1)

Application Number Title Priority Date Filing Date
EP00109199A Expired - Lifetime EP1052703B1 (en) 1999-05-10 2000-05-09 Thin film Ib/IIIa/VIa compound semiconductor solar cell and method of production of such a solar cell

Country Status (7)

Country Link
US (1) US6429369B1 (en)
EP (1) EP1052703B1 (en)
JP (1) JP4873771B2 (en)
AT (1) ATE502402T1 (en)
AU (1) AU776778B2 (en)
DE (2) DE19921515A1 (en)
ES (1) ES2360669T3 (en)

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US20070251570A1 (en) * 2002-03-29 2007-11-01 Konarka Technologies, Inc. Photovoltaic cells utilizing mesh electrodes
US7560641B2 (en) * 2002-06-17 2009-07-14 Shalini Menezes Thin film solar cell configuration and fabrication method
CN100530701C (en) * 2002-09-30 2009-08-19 米亚索尔公司 Manufacturing apparatus and method for large-scale production of thin-film solar cells
WO2004032189A2 (en) 2002-09-30 2004-04-15 Miasolé Manufacturing apparatus and method for large-scale production of thin-film solar cells
DE10259472B4 (en) * 2002-12-19 2006-04-20 Solarion Gmbh Flexible thin-film solar cell with flexible protective layer
EP1606846B1 (en) * 2003-03-24 2010-10-27 Konarka Technologies, Inc. Photovoltaic cell with mesh electrode
WO2005006393A2 (en) * 2003-05-27 2005-01-20 Triton Systems, Inc. Pinhold porosity free insulating films on flexible metallic substrates for thin film applications
DE102004042306B4 (en) * 2004-02-17 2007-10-04 Pvflex Solar Gmbh Method for producing a substrate for flexible thin-film solar cells according to the CIS technology
US8372734B2 (en) * 2004-02-19 2013-02-12 Nanosolar, Inc High-throughput printing of semiconductor precursor layer from chalcogenide nanoflake particles
US8329501B1 (en) 2004-02-19 2012-12-11 Nanosolar, Inc. High-throughput printing of semiconductor precursor layer from inter-metallic microflake particles
US20060060237A1 (en) * 2004-09-18 2006-03-23 Nanosolar, Inc. Formation of solar cells on foil substrates
US8623448B2 (en) * 2004-02-19 2014-01-07 Nanosolar, Inc. High-throughput printing of semiconductor precursor layer from chalcogenide microflake particles
EP1749309A2 (en) * 2004-03-15 2007-02-07 Bulent M. Basol Technique and apparatus for depositing thin layers of semiconductors for solar cell fabricaton
US20090032108A1 (en) * 2007-03-30 2009-02-05 Craig Leidholm Formation of photovoltaic absorber layers on foil substrates
US8541048B1 (en) * 2004-09-18 2013-09-24 Nanosolar, Inc. Formation of photovoltaic absorber layers on foil substrates
JP2008514006A (en) * 2004-09-18 2008-05-01 ナノソーラー インコーポレイテッド Formation of solar cells on foil substrates
US8927315B1 (en) 2005-01-20 2015-01-06 Aeris Capital Sustainable Ip Ltd. High-throughput assembly of series interconnected solar cells
US20070224464A1 (en) * 2005-03-21 2007-09-27 Srini Balasubramanian Dye-sensitized photovoltaic cells
US7749794B2 (en) * 2005-06-24 2010-07-06 Konarka Technologies, Inc. Method of preparing electrode
EP1902476B1 (en) * 2005-07-12 2014-07-09 Merck Patent GmbH Method of transferring photovoltaic cells
WO2007011742A2 (en) * 2005-07-14 2007-01-25 Konarka Technologies, Inc. Cigs photovoltaic cells
KR100850000B1 (en) * 2005-09-06 2008-08-01 주식회사 엘지화학 Process for Preparation of Absorption Layer of Solar Cell
WO2008122027A2 (en) * 2007-04-02 2008-10-09 Konarka Technologies, Inc. Novel electrode
US20080302357A1 (en) * 2007-06-05 2008-12-11 Denault Roger Solar photovoltaic collector hybrid
DE102007036715B4 (en) 2007-08-05 2011-02-24 Solarion Ag Method and device for producing flexible thin-film solar cells
US20090065046A1 (en) * 2007-09-12 2009-03-12 Denault Roger Solar photovoltaic module to solar collector hybrid retrofit
US20090169723A1 (en) * 2007-10-02 2009-07-02 University Of Delaware I-iii-vi2 photovoltaic absorber layers
DE102007052237A1 (en) * 2007-10-22 2009-04-30 Gebr. Schmid Gmbh & Co. Method and device for coating a substrate for thin-film solar cells
WO2009062140A2 (en) * 2007-11-08 2009-05-14 Sager Brian M Improved anti-reflective coating
US8324414B2 (en) * 2009-12-23 2012-12-04 Battelle Energy Alliance, Llc Methods of forming single source precursors, methods of forming polymeric single source precursors, and single source precursors and intermediate products formed by such methods
US8951446B2 (en) 2008-03-13 2015-02-10 Battelle Energy Alliance, Llc Hybrid particles and associated methods
US9371226B2 (en) 2011-02-02 2016-06-21 Battelle Energy Alliance, Llc Methods for forming particles
US8003070B2 (en) * 2008-03-13 2011-08-23 Battelle Energy Alliance, Llc Methods for forming particles from single source precursors
US7842534B2 (en) * 2008-04-02 2010-11-30 Sunlight Photonics Inc. Method for forming a compound semi-conductor thin-film
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Also Published As

Publication number Publication date
EP1052703B1 (en) 2011-03-16
JP2001007360A (en) 2001-01-12
AU3260800A (en) 2000-11-16
ATE502402T1 (en) 2011-04-15
AU776778B2 (en) 2004-09-23
ES2360669T3 (en) 2011-06-08
JP4873771B2 (en) 2012-02-08
US6429369B1 (en) 2002-08-06
DE50016078D1 (en) 2011-04-28
EP1052703A2 (en) 2000-11-15
DE19921515A1 (en) 2000-11-30

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