JPS5854678A - Solar battery element - Google Patents

Solar battery element

Info

Publication number
JPS5854678A
JPS5854678A JP56152181A JP15218181A JPS5854678A JP S5854678 A JPS5854678 A JP S5854678A JP 56152181 A JP56152181 A JP 56152181A JP 15218181 A JP15218181 A JP 15218181A JP S5854678 A JPS5854678 A JP S5854678A
Authority
JP
Japan
Prior art keywords
substrate
electrode
region
film
main surface
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56152181A
Other languages
Japanese (ja)
Other versions
JPS6322633B2 (en
Inventor
Kunihiro Matsukuma
邦浩 松熊
Koichi Suda
晃一 須田
Tadashi Sakagami
阪上 正
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP56152181A priority Critical patent/JPS5854678A/en
Publication of JPS5854678A publication Critical patent/JPS5854678A/en
Publication of JPS6322633B2 publication Critical patent/JPS6322633B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/068Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/547Monocrystalline silicon PV cells

Landscapes

  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Sustainable Development (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photovoltaic Devices (AREA)

Abstract

PURPOSE:To prevent the damage of an n type conductive region at the time of forming electrodes and to improve the current collecting efficiency of a solar battery cell by covering the light receiving surface of a substrate for performing photoelectric conversion therein with a transparent conductive film and forming one electrode on the film. CONSTITUTION:A substrate 1 made of a single crystalline silicon is formed of an n type conductive region 13 adjacent to one main surface 11, and a p type conductive region 14 for forming a p-n junction between the region 14 and the region 13 adjacent to the other main surface 12 and the region 13, and both main surfaces 11, 12 are entirely covered with transparent conductive films 5, 6. A lattice-shaped electrode 2 is formed on the film 5 for covering the one main surface 11, and other electrode 3 is substantially entirely formed on the other film 6.

Description

【発明の詳細な説明】 本発明は太陽電池素子の改良に関する。[Detailed description of the invention] The present invention relates to improvements in solar cell elements.

太陽電池素子は、太陽エネルギーを直接電気エネルギー
に変換する素子で1通常、単結晶シリコン、多結晶シリ
コン、アモルファスシリコン5GjLAa系■−■族化
合物半導体、Cd8等の光電変換反応を呈する物質を基
板とし、それに集電用電極゛を設けた構成を採っている
A solar cell element is an element that directly converts solar energy into electrical energy.It usually uses a substrate that exhibits a photoelectric conversion reaction, such as single crystal silicon, polycrystalline silicon, amorphous silicon, 5GjLAa-based ■-■ group compound semiconductor, or Cd8. , and is provided with a current collecting electrode.

第1図は単結晶シリコンを基板とした代表的な太陽電池
素子で、lは互いに反対側に位置する一対の主表面11
.12と、一方の主表面11に隣接するn型導電性領域
13と、他方の主表面12及びn型導電性領域13に隣
接し、n型導電性領域13との間にPn接合Jを形成す
るP型導電性領域14とから成る基板、2は基板1の一
方の主表面11に形成された格子状の一方の電極、3は
基板1の他方の主表面12の略全面に形成された他方の
電極、4は基板1の一方の主表面11の一方の電極2が
形成されていない面を被覆する反射防止膜である。基板
1は例えば抵抗率0.5〜50m、厚さが300pmの
P型シリコン板の一方の面に例えば燐を拡散してシート
抵抗的50Ω10、深さ0.3〜0.5 p mのn型
領域を形成することによって得られる。反射防止膜4は
、屈折率が基板1と空気の屈折率の中間に位置する絶縁
材料例えば、s io、s io□s Al2O8,’
rto、。
Figure 1 shows a typical solar cell element using single-crystal silicon as a substrate, where l denotes a pair of main surfaces 11 located on opposite sides.
.. 12, an n-type conductive region 13 adjacent to one main surface 11, and an n-type conductive region 13 adjacent to the other main surface 12 and n-type conductive region 13. 2 is one grid-shaped electrode formed on one main surface 11 of the substrate 1, and 3 is formed on substantially the entire surface of the other main surface 12 of the substrate 1. The other electrode 4 is an antireflection film that covers the surface of one main surface 11 of the substrate 1 where one electrode 2 is not formed. The substrate 1 is, for example, a P-type silicon plate with a resistivity of 0.5 to 50 m and a thickness of 300 pm, with a sheet resistance of 50Ω10 and a depth of 0.3 to 0.5 pm by diffusing, for example, phosphorus on one side of the P-type silicon plate. Obtained by forming a mold area. The antireflection film 4 is made of an insulating material whose refractive index is between that of the substrate 1 and that of air, such as sio, sio□s Al2O8,'
rto,.

Ta205  等から選ばれ、約650〜750人の厚
さに形成される。一方の電極2は1反射防止膜4を形成
した後、ulえばホトエツチングで格子状に窓あけをし
て窓部に形成する。電極はシリコンとの接着性及び半田
との接着性を考慮して、例えば基板側からCr−Ni−
Ag或いはT i −N i−’A gの如き多層構造
とすることが行なわれている。
The material is selected from Ta205, etc., and is formed to a thickness of approximately 650 to 750 mm. One electrode 2 is formed in a window portion by forming a first antireflection film 4 and then opening a window in a lattice shape by photoetching. For example, the electrodes are made of Cr-Ni- from the substrate side in consideration of adhesion with silicon and solder.
A multilayer structure such as Ag or Ti-Ni-'Ag is being used.

か\る構成の太陽電池素子は、(1ン薄いn型導電性領
域に直接電極を形成するため、−極形成時に該領域を破
壊するおそれがあること、(2)n型導電性領域の破壊
を防止するためには、熱処理温度の厳密な制御及び慎重
な取扱いが必要となること、(3ン反射防止腐の窓開は
工程が必要であること1等製造上の欠点がある。
A solar cell element with such a configuration has the following problems: (1) since the electrode is formed directly on the thin n-type conductive region, there is a risk of destroying the region when forming the negative electrode; (2) the thin n-type conductive region is There are manufacturing disadvantages, such as the need for strict control of heat treatment temperature and careful handling to prevent destruction, and the need for a step to open the window for anti-reflective corrosion.

本発明の目的は、上記の欠点を除去した改良された構造
を有する太陽電池素子を提供することにある。
An object of the present invention is to provide a solar cell element having an improved structure that eliminates the above-mentioned drawbacks.

か\る目的を奏する本発明太陽電池素子の特徴とすると
ころは、基板の少なくとも受光面となる面を透明の導電
膜で被覆し、その上に一方の電極を形成した点にある。
The solar cell element of the present invention that achieves the above purpose is characterized in that at least the light-receiving surface of the substrate is coated with a transparent conductive film, and one electrode is formed on the transparent conductive film.

以下本発明を実施例として示した第2図により詳細に説
明する。図において、1は第1図と同様の単結晶シリコ
ンから成る基板、5.6は基板1の両生表面11.12
全面を被覆するように形成された透明の導電膜、2は導
電膜5上へ形成した例えば格子状をなす一方の電極、3
は導電膜6上の略全面に形成した他方の電極である。導
電膜5゜6としては、In、3nの酸化物を使用し、真
空蒸着法、スパッタ法、CVD法、デツプ法等により形
成する。In、 Snの酸化物は、その酸化物の適当な
配合と、膜付後の適当な熱処理により導電率を任意に選
定できる。
The present invention will be explained in detail below with reference to FIG. 2, which shows an example. In the figure, 1 is a substrate made of single crystal silicon similar to that in FIG. 1, and 5.6 is an amphibatic surface 11.
A transparent conductive film formed to cover the entire surface; 2 is one electrode formed on the conductive film 5 in, for example, a grid shape; 3;
is the other electrode formed on substantially the entire surface of the conductive film 6. The conductive film 5.6 is formed using an oxide of In or 3N by a vacuum evaporation method, a sputtering method, a CVD method, a dip method, or the like. The conductivity of the oxides of In and Sn can be arbitrarily selected by appropriately blending the oxides and performing appropriate heat treatment after film formation.

か\る構成の太陽電池素子によれば、(1)1方の電極
が基板に直接形成されないため、上述の欠点を一掃でき
る、(2)電極を基板に直接4着する必要がないため、
多層構造にしなくてよい、(3)受光面の略全面が一方
の電極に電気的に接続されるため、集電効率が向上する
、(4)反射防止膜を兼用できるため、反射防止膜の形
成が容易となる、等の効果を奏する。
According to the solar cell element having such a configuration, (1) one electrode is not formed directly on the substrate, so the above-mentioned drawbacks can be eliminated; (2) there is no need to attach four electrodes directly to the substrate;
(3) Almost the entire surface of the light-receiving surface is electrically connected to one electrode, improving current collection efficiency; (4) Can also be used as an anti-reflection film, making it easier to use the anti-reflection film. This has effects such as ease of formation.

以上は、本発明を単結晶シリコンを基板とじた太陽電池
素子を例に採って説明したが、本発明はこれに限定され
ることなく、単結晶シリコン以外の材料を基板とした太
陽電池素子にも適用できるものである。
Although the present invention has been explained above using a solar cell element having a substrate made of single crystal silicon as an example, the present invention is not limited thereto, and can be applied to a solar cell element having a substrate made of a material other than single crystal silicon. It is also applicable.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は従来の太陽電池素子の概略斜視図、第2図は本
発明太陽電池素子の概略断面図である。 第2図
FIG. 1 is a schematic perspective view of a conventional solar cell element, and FIG. 2 is a schematic sectional view of the solar cell element of the present invention. Figure 2

Claims (1)

【特許請求の範囲】[Claims] 11.一対の主表面を有し、一方の主表面から光を受は
入れ内部で光電変換を行なう基板と、基板の一方の主表
面の一部に形成された一方の電極と、基板の他方の主表
面の略全面に形成された他方の電極とを具備するものに
おいて、基板の少なくとも一方の主表面を透明の導電膜
で被覆し、その上に一方の電極を形成したことを特徴と
する太陽電池素子。
11. A substrate that has a pair of main surfaces, receives light from one main surface and performs photoelectric conversion inside, one electrode formed on a part of one main surface of the substrate, and one electrode formed on a part of the other main surface of the substrate. and the other electrode formed on substantially the entire surface thereof, wherein at least one main surface of the substrate is coated with a transparent conductive film, and one electrode is formed thereon. element.
JP56152181A 1981-09-28 1981-09-28 Solar battery element Granted JPS5854678A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56152181A JPS5854678A (en) 1981-09-28 1981-09-28 Solar battery element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56152181A JPS5854678A (en) 1981-09-28 1981-09-28 Solar battery element

Publications (2)

Publication Number Publication Date
JPS5854678A true JPS5854678A (en) 1983-03-31
JPS6322633B2 JPS6322633B2 (en) 1988-05-12

Family

ID=15534817

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56152181A Granted JPS5854678A (en) 1981-09-28 1981-09-28 Solar battery element

Country Status (1)

Country Link
JP (1) JPS5854678A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6066426A (en) * 1983-08-19 1985-04-16 エナージー・コンバーション・デバイセス・インコーポレーテッド Improving method for bonding conductive metal material in preselected pattern on transparent conductive layer of semiconductor element
JPS60167387A (en) * 1983-08-10 1985-08-30 ヌ−ケン・ゲ−エムベ−ハ− Photovoltaic battery and method of producing same
JPH01140676A (en) * 1987-11-26 1989-06-01 Nippon Denso Co Ltd Semi-transparent solar cell
WO2012105155A1 (en) * 2011-01-31 2012-08-09 三洋電機株式会社 Photoelectric converter and method for producing same

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5568681A (en) * 1978-11-17 1980-05-23 Yoshihiro Hamakawa Amorphous silicon solar battery and fabricating the same

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5568681A (en) * 1978-11-17 1980-05-23 Yoshihiro Hamakawa Amorphous silicon solar battery and fabricating the same

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60167387A (en) * 1983-08-10 1985-08-30 ヌ−ケン・ゲ−エムベ−ハ− Photovoltaic battery and method of producing same
JPS6066426A (en) * 1983-08-19 1985-04-16 エナージー・コンバーション・デバイセス・インコーポレーテッド Improving method for bonding conductive metal material in preselected pattern on transparent conductive layer of semiconductor element
JPH0515071B2 (en) * 1983-08-19 1993-02-26 Enaajii Konbaajon Debaisesu Inc
JPH01140676A (en) * 1987-11-26 1989-06-01 Nippon Denso Co Ltd Semi-transparent solar cell
WO2012105155A1 (en) * 2011-01-31 2012-08-09 三洋電機株式会社 Photoelectric converter and method for producing same
JPWO2012105155A1 (en) * 2011-01-31 2014-07-03 三洋電機株式会社 Photoelectric conversion device and manufacturing method thereof

Also Published As

Publication number Publication date
JPS6322633B2 (en) 1988-05-12

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