JPS5854678A - Solar battery element - Google Patents
Solar battery elementInfo
- Publication number
- JPS5854678A JPS5854678A JP56152181A JP15218181A JPS5854678A JP S5854678 A JPS5854678 A JP S5854678A JP 56152181 A JP56152181 A JP 56152181A JP 15218181 A JP15218181 A JP 15218181A JP S5854678 A JPS5854678 A JP S5854678A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- electrode
- region
- film
- main surface
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 claims abstract description 20
- 238000006243 chemical reaction Methods 0.000 claims abstract 2
- 230000006378 damage Effects 0.000 abstract description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 abstract 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 230000003667 anti-reflective effect Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
Landscapes
- Life Sciences & Earth Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Sustainable Development (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
【発明の詳細な説明】 本発明は太陽電池素子の改良に関する。[Detailed description of the invention] The present invention relates to improvements in solar cell elements.
太陽電池素子は、太陽エネルギーを直接電気エネルギー
に変換する素子で１通常、単結晶シリコン、多結晶シリ
コン、アモルファスシリコン５ＧｊＬＡａ系■−■族化
合物半導体、Ｃｄ８等の光電変換反応を呈する物質を基
板とし、それに集電用電極゛を設けた構成を採っている
。A solar cell element is an element that directly converts solar energy into electrical energy.It usually uses a substrate that exhibits a photoelectric conversion reaction, such as single crystal silicon, polycrystalline silicon, amorphous silicon, 5GjLAa-based ■-■ group compound semiconductor, or Cd8. , and is provided with a current collecting electrode.
第１図は単結晶シリコンを基板とした代表的な太陽電池
素子で、ｌは互いに反対側に位置する一対の主表面１１
．１２と、一方の主表面１１に隣接するｎ型導電性領域
１３と、他方の主表面１２及びｎ型導電性領域１３に隣
接し、ｎ型導電性領域１３との間にＰｎ接合Ｊを形成す
るＰ型導電性領域１４とから成る基板、２は基板１の一
方の主表面１１に形成された格子状の一方の電極、３は
基板１の他方の主表面１２の略全面に形成された他方の
電極、４は基板１の一方の主表面１１の一方の電極２が
形成されていない面を被覆する反射防止膜である。基板
１は例えば抵抗率０．５〜５０ｍ、厚さが３００ｐｍの
Ｐ型シリコン板の一方の面に例えば燐を拡散してシート
抵抗的５０Ω１０、深さ０．３〜０．５ ｐ ｍのｎ型
領域を形成することによって得られる。反射防止膜４は
、屈折率が基板１と空気の屈折率の中間に位置する絶縁
材料例えば、ｓ ｉｏ、ｓ ｉｏ□ｓ Ａｌ２Ｏ８，’
ｒｔｏ、。Figure 1 shows a typical solar cell element using single-crystal silicon as a substrate, where l denotes a pair of main surfaces 11 located on opposite sides.
．． 12, an n-type conductive region 13 adjacent to one main surface 11, and an n-type conductive region 13 adjacent to the other main surface 12 and n-type conductive region 13. 2 is one grid-shaped electrode formed on one main surface 11 of the substrate 1, and 3 is formed on substantially the entire surface of the other main surface 12 of the substrate 1. The other electrode 4 is an antireflection film that covers the surface of one main surface 11 of the substrate 1 where one electrode 2 is not formed. The substrate 1 is, for example, a P-type silicon plate with a resistivity of 0.5 to 50 m and a thickness of 300 pm, with a sheet resistance of 50Ω10 and a depth of 0.3 to 0.5 pm by diffusing, for example, phosphorus on one side of the P-type silicon plate. Obtained by forming a mold area. The antireflection film 4 is made of an insulating material whose refractive index is between that of the substrate 1 and that of air, such as sio, sio□s Al2O8,'
rto,.
Ｔａ２０５ 等から選ばれ、約６５０〜７５０人の厚
さに形成される。一方の電極２は１反射防止膜４を形成
した後、ｕｌえばホトエツチングで格子状に窓あけをし
て窓部に形成する。電極はシリコンとの接着性及び半田
との接着性を考慮して、例えば基板側からＣｒ−Ｎｉ−
Ａｇ或いはＴ ｉ −Ｎ ｉ−’Ａ ｇの如き多層構造
とすることが行なわれている。The material is selected from Ta205, etc., and is formed to a thickness of approximately 650 to 750 mm. One electrode 2 is formed in a window portion by forming a first antireflection film 4 and then opening a window in a lattice shape by photoetching. For example, the electrodes are made of Cr-Ni- from the substrate side in consideration of adhesion with silicon and solder.
A multilayer structure such as Ag or Ti-Ni-'Ag is being used.
か＼る構成の太陽電池素子は、（１ン薄いｎ型導電性領
域に直接電極を形成するため、−極形成時に該領域を破
壊するおそれがあること、（２）ｎ型導電性領域の破壊
を防止するためには、熱処理温度の厳密な制御及び慎重
な取扱いが必要となること、（３ン反射防止腐の窓開は
工程が必要であること１等製造上の欠点がある。A solar cell element with such a configuration has the following problems: (1) since the electrode is formed directly on the thin n-type conductive region, there is a risk of destroying the region when forming the negative electrode; (2) the thin n-type conductive region is There are manufacturing disadvantages, such as the need for strict control of heat treatment temperature and careful handling to prevent destruction, and the need for a step to open the window for anti-reflective corrosion.
本発明の目的は、上記の欠点を除去した改良された構造
を有する太陽電池素子を提供することにある。An object of the present invention is to provide a solar cell element having an improved structure that eliminates the above-mentioned drawbacks.
か＼る目的を奏する本発明太陽電池素子の特徴とすると
ころは、基板の少なくとも受光面となる面を透明の導電
膜で被覆し、その上に一方の電極を形成した点にある。The solar cell element of the present invention that achieves the above purpose is characterized in that at least the light-receiving surface of the substrate is coated with a transparent conductive film, and one electrode is formed on the transparent conductive film.
以下本発明を実施例として示した第２図により詳細に説
明する。図において、１は第１図と同様の単結晶シリコ
ンから成る基板、５．６は基板１の両生表面１１．１２
全面を被覆するように形成された透明の導電膜、２は導
電膜５上へ形成した例えば格子状をなす一方の電極、３
は導電膜６上の略全面に形成した他方の電極である。導
電膜５゜６としては、Ｉｎ、３ｎの酸化物を使用し、真
空蒸着法、スパッタ法、ＣＶＤ法、デツプ法等により形
成する。Ｉｎ、 Ｓｎの酸化物は、その酸化物の適当な
配合と、膜付後の適当な熱処理により導電率を任意に選
定できる。The present invention will be explained in detail below with reference to FIG. 2, which shows an example. In the figure, 1 is a substrate made of single crystal silicon similar to that in FIG. 1, and 5.6 is an amphibatic surface 11.
A transparent conductive film formed to cover the entire surface; 2 is one electrode formed on the conductive film 5 in, for example, a grid shape; 3;
is the other electrode formed on substantially the entire surface of the conductive film 6. The conductive film 5.6 is formed using an oxide of In or 3N by a vacuum evaporation method, a sputtering method, a CVD method, a dip method, or the like. The conductivity of the oxides of In and Sn can be arbitrarily selected by appropriately blending the oxides and performing appropriate heat treatment after film formation.
か＼る構成の太陽電池素子によれば、（１）１方の電極
が基板に直接形成されないため、上述の欠点を一掃でき
る、（２）電極を基板に直接４着する必要がないため、
多層構造にしなくてよい、（３）受光面の略全面が一方
の電極に電気的に接続されるため、集電効率が向上する
、（４）反射防止膜を兼用できるため、反射防止膜の形
成が容易となる、等の効果を奏する。According to the solar cell element having such a configuration, (1) one electrode is not formed directly on the substrate, so the above-mentioned drawbacks can be eliminated; (2) there is no need to attach four electrodes directly to the substrate;
(3) Almost the entire surface of the light-receiving surface is electrically connected to one electrode, improving current collection efficiency; (4) Can also be used as an anti-reflection film, making it easier to use the anti-reflection film. This has effects such as ease of formation.
以上は、本発明を単結晶シリコンを基板とじた太陽電池
素子を例に採って説明したが、本発明はこれに限定され
ることなく、単結晶シリコン以外の材料を基板とした太
陽電池素子にも適用できるものである。Although the present invention has been explained above using a solar cell element having a substrate made of single crystal silicon as an example, the present invention is not limited thereto, and can be applied to a solar cell element having a substrate made of a material other than single crystal silicon. It is also applicable.
第１図は従来の太陽電池素子の概略斜視図、第２図は本
発明太陽電池素子の概略断面図である。
第２図FIG. 1 is a schematic perspective view of a conventional solar cell element, and FIG. 2 is a schematic sectional view of the solar cell element of the present invention. Figure 2
Claims (1)
入れ内部で光電変換を行なう基板と、基板の一方の主表
面の一部に形成された一方の電極と、基板の他方の主表
面の略全面に形成された他方の電極とを具備するものに
おいて、基板の少なくとも一方の主表面を透明の導電膜
で被覆し、その上に一方の電極を形成したことを特徴と
する太陽電池素子。11. A substrate that has a pair of main surfaces, receives light from one main surface and performs photoelectric conversion inside, one electrode formed on a part of one main surface of the substrate, and one electrode formed on a part of the other main surface of the substrate. and the other electrode formed on substantially the entire surface thereof, wherein at least one main surface of the substrate is coated with a transparent conductive film, and one electrode is formed thereon. element.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56152181A JPS5854678A (en) | 1981-09-28 | 1981-09-28 | Solar battery element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56152181A JPS5854678A (en) | 1981-09-28 | 1981-09-28 | Solar battery element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5854678A true JPS5854678A (en) | 1983-03-31 |
| JPS6322633B2 JPS6322633B2 (en) | 1988-05-12 |
Family
ID=15534817
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56152181A Granted JPS5854678A (en) | 1981-09-28 | 1981-09-28 | Solar battery element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5854678A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6066426A (en) * | 1983-08-19 | 1985-04-16 | エナージー・コンバーション・デバイセス・インコーポレーテッド | Improving method for bonding conductive metal material in preselected pattern on transparent conductive layer of semiconductor element |
| JPS60167387A (en) * | 1983-08-10 | 1985-08-30 | ヌ−ケン・ゲ−エムベ−ハ− | Photovoltaic battery and method of producing same |
| JPH01140676A (en) * | 1987-11-26 | 1989-06-01 | Nippon Denso Co Ltd | Semi-transparent solar cell |
| WO2012105155A1 (en) * | 2011-01-31 | 2012-08-09 | 三洋電機株式会社 | Photoelectric converter and method for producing same |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5568681A (en) * | 1978-11-17 | 1980-05-23 | Yoshihiro Hamakawa | Amorphous silicon solar battery and fabricating the same |
-
1981
- 1981-09-28 JP JP56152181A patent/JPS5854678A/en active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5568681A (en) * | 1978-11-17 | 1980-05-23 | Yoshihiro Hamakawa | Amorphous silicon solar battery and fabricating the same |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60167387A (en) * | 1983-08-10 | 1985-08-30 | ヌ−ケン・ゲ−エムベ−ハ− | Photovoltaic battery and method of producing same |
| JPS6066426A (en) * | 1983-08-19 | 1985-04-16 | エナージー・コンバーション・デバイセス・インコーポレーテッド | Improving method for bonding conductive metal material in preselected pattern on transparent conductive layer of semiconductor element |
| JPH0515071B2 (en) * | 1983-08-19 | 1993-02-26 | Enaajii Konbaajon Debaisesu Inc | |
| JPH01140676A (en) * | 1987-11-26 | 1989-06-01 | Nippon Denso Co Ltd | Semi-transparent solar cell |
| WO2012105155A1 (en) * | 2011-01-31 | 2012-08-09 | 三洋電機株式会社 | Photoelectric converter and method for producing same |
| JPWO2012105155A1 (en) * | 2011-01-31 | 2014-07-03 | 三洋電機株式会社 | Photoelectric conversion device and manufacturing method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6322633B2 (en) | 1988-05-12 |
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