JPS6459966A - Laminated multilayer amorphous solar cell - Google Patents
Laminated multilayer amorphous solar cellInfo
- Publication number
- JPS6459966A JPS6459966A JP62218686A JP21868687A JPS6459966A JP S6459966 A JPS6459966 A JP S6459966A JP 62218686 A JP62218686 A JP 62218686A JP 21868687 A JP21868687 A JP 21868687A JP S6459966 A JPS6459966 A JP S6459966A
- Authority
- JP
- Japan
- Prior art keywords
- type
- layer
- recombination
- transducer
- solar cell
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/545—Microcrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
Landscapes
- Photovoltaic Devices (AREA)
Abstract
PURPOSE:To suppress the formation of a p-n junction and avoid the accumulation of carriers in p-type and n-type amorphous semiconductor films and accelerate the recombination of the carriers and improve the photoelectric conversion efficiency by providing a recombination layer between the p-type and n-type amorphous semiconductor films as the junction part of respective p-i-n optoelectric transducer unit. CONSTITUTION:An n-type layer 2 made of a-Si:H, an i-type photoelectric active layer 3 made of a-Si:H and a p-type layer 4 made of a-Si:H as an intermediate doped layer are successively built up on a substrate 1 to constitute a first optoelectric transducer 11. The transducer 11 is coupled with a second optoelectric transducer 12 with a recombination layer 13 between. The second transducer 12 is constituted by forming an i-type active layer 6 made of a-Si:H, a p-type window layer 7 and a transparent conductive film 8 on an n-type intermediate doped layer 5. Further, collecting electrodes 9 and 9 are formed on the conductive film 8. With this constitution, the photoelectric conversion efficiency of a laminated double-layer amorphous solar cell can be improved by employing the recombination layer 13.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62218686A JPS6459966A (en) | 1987-08-31 | 1987-08-31 | Laminated multilayer amorphous solar cell |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62218686A JPS6459966A (en) | 1987-08-31 | 1987-08-31 | Laminated multilayer amorphous solar cell |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6459966A true JPS6459966A (en) | 1989-03-07 |
Family
ID=16723827
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62218686A Pending JPS6459966A (en) | 1987-08-31 | 1987-08-31 | Laminated multilayer amorphous solar cell |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6459966A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7808065B2 (en) | 2008-02-28 | 2010-10-05 | Mitsubishi Electric Corporation | Semiconductor light receiving element |
JP2011216586A (en) * | 2010-03-31 | 2011-10-27 | Sharp Corp | Laminated photoelectric conversion device and method of manufacturing the same |
JP2014135343A (en) * | 2013-01-09 | 2014-07-24 | Sharp Corp | Photoelectric conversion element, and method of manufacturing the same |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58122783A (en) * | 1982-01-14 | 1983-07-21 | Sanyo Electric Co Ltd | Photovoltaic device |
JPS60233869A (en) * | 1984-02-15 | 1985-11-20 | エナージー・コンバーシヨン・デバイセス・インコーポレーテツド | Semiconductor device and method of producing same |
JPS611062A (en) * | 1984-06-14 | 1986-01-07 | Toshiba Corp | Photovoltaic device |
JPS6284570A (en) * | 1985-06-07 | 1987-04-18 | エレクトリツク パワ− リサ−チ インスチテユ−ト インコ−ポレ−テツド | Photocell device |
JPS62162365A (en) * | 1986-01-10 | 1987-07-18 | Sanyo Electric Co Ltd | Photovoltaic device |
JPS62296569A (en) * | 1986-06-17 | 1987-12-23 | Sumitomo Electric Ind Ltd | Tandem-structure solar battery |
-
1987
- 1987-08-31 JP JP62218686A patent/JPS6459966A/en active Pending
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58122783A (en) * | 1982-01-14 | 1983-07-21 | Sanyo Electric Co Ltd | Photovoltaic device |
JPS60233869A (en) * | 1984-02-15 | 1985-11-20 | エナージー・コンバーシヨン・デバイセス・インコーポレーテツド | Semiconductor device and method of producing same |
JPS611062A (en) * | 1984-06-14 | 1986-01-07 | Toshiba Corp | Photovoltaic device |
JPS6284570A (en) * | 1985-06-07 | 1987-04-18 | エレクトリツク パワ− リサ−チ インスチテユ−ト インコ−ポレ−テツド | Photocell device |
JPS62162365A (en) * | 1986-01-10 | 1987-07-18 | Sanyo Electric Co Ltd | Photovoltaic device |
JPS62296569A (en) * | 1986-06-17 | 1987-12-23 | Sumitomo Electric Ind Ltd | Tandem-structure solar battery |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7808065B2 (en) | 2008-02-28 | 2010-10-05 | Mitsubishi Electric Corporation | Semiconductor light receiving element |
JP2011216586A (en) * | 2010-03-31 | 2011-10-27 | Sharp Corp | Laminated photoelectric conversion device and method of manufacturing the same |
JP2014135343A (en) * | 2013-01-09 | 2014-07-24 | Sharp Corp | Photoelectric conversion element, and method of manufacturing the same |
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