JPS6341082A - Photovoltaic device - Google Patents

Photovoltaic device

Info

Publication number
JPS6341082A
JPS6341082A JP18545786A JP18545786A JPS6341082A JP S6341082 A JPS6341082 A JP S6341082A JP 18545786 A JP18545786 A JP 18545786A JP 18545786 A JP18545786 A JP 18545786A JP S6341082 A JPS6341082 A JP S6341082A
Authority
JP
Grant status
Application
Patent type
Prior art keywords
film
type
amorphous silicon
heterojunction
silicon film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP18545786A
Inventor
Takeshige Ichimura
Original Assignee
Fuji Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L31/00Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/072Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type
    • H01L31/0749Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type including a AIBIIICVI compound, e.g. CdS/CulnSe2 [CIS] heterojunction solar cells
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/54Material technologies
    • Y02E10/541CuInSe2 material PV cells

Abstract

PURPOSE:To obtain a good characteristic of photovoltaic force by a method wherein lattice mismatching at a junction is eliminated in such a way that an amorphous silicon film of a heterojunction which is composed of a film of one conductive type and an amorphous silicon film of another conductive type is assigned as a light-incident side. CONSTITUTION:An amorphous silicon film of a heterojunction is assigned as a light-incident side in such a way that the heterojunction is composed of a film of one conductive type of a semiconductor which has the molecular formula in the form of CuInX2 in which X is an element of Group VI in the periodic table and an amorphous silicon film of another type. An N-type polycrystalline CuInSe2 film 2 of a semiconductor such as chalcopyrite type is formed on a metallic substrate 1 made of, for example, stainless steel, a P-type amorphous silicon film 3 into which boron, etc. is doped is then formed, and then a transparent conductive film 4, such as ITO film, SnO2, etc. is formed as an electrode opposite to the film substrate 1 so that a photovoltaic device can be constituted. Because one side of the heterojunction is an amorphous semiconductor, lattice mismatching at the junction is eliminated.
JP18545786A 1986-08-07 1986-08-07 Photovoltaic device Pending JPS6341082A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP18545786A JPS6341082A (en) 1986-08-07 1986-08-07 Photovoltaic device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18545786A JPS6341082A (en) 1986-08-07 1986-08-07 Photovoltaic device

Publications (1)

Publication Number Publication Date
JPS6341082A true true JPS6341082A (en) 1988-02-22

Family

ID=16171125

Family Applications (1)

Application Number Title Priority Date Filing Date
JP18545786A Pending JPS6341082A (en) 1986-08-07 1986-08-07 Photovoltaic device

Country Status (1)

Country Link
JP (1) JPS6341082A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6121541A (en) * 1997-07-28 2000-09-19 Bp Solarex Monolithic multi-junction solar cells with amorphous silicon and CIS and their alloys
WO2009011333A1 (en) * 2007-07-13 2009-01-22 Omron Corporation Cis solar cell and method for manufacturing the cis solar cell
WO2009101925A1 (en) * 2008-02-12 2009-08-20 Tokyo Electron Limited Solar cell wherein solar photovoltaic thin film is directly formed on base
CN101621085B (en) 2009-08-03 2012-05-23 常熟阿特斯太阳能电力有限公司 Chalcopyrite type semiconductor thin-film heterojunction solar cell based on P-shaped silicon

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6121541A (en) * 1997-07-28 2000-09-19 Bp Solarex Monolithic multi-junction solar cells with amorphous silicon and CIS and their alloys
US6368892B1 (en) * 1997-07-28 2002-04-09 Bp Corporation North America Inc. Monolithic multi-junction solar cells with amorphous silicon and CIS and their alloys
WO2009011333A1 (en) * 2007-07-13 2009-01-22 Omron Corporation Cis solar cell and method for manufacturing the cis solar cell
US8575476B2 (en) 2007-07-13 2013-11-05 Omron Corporation CIS solar cell and method for manufacturing the same
WO2009101925A1 (en) * 2008-02-12 2009-08-20 Tokyo Electron Limited Solar cell wherein solar photovoltaic thin film is directly formed on base
US8841545B2 (en) 2008-02-12 2014-09-23 Tohoku University Solar cell wherein solar photovolatic thin film is directly formed on base
CN101621085B (en) 2009-08-03 2012-05-23 常熟阿特斯太阳能电力有限公司 Chalcopyrite type semiconductor thin-film heterojunction solar cell based on P-shaped silicon

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