JPS55140278A - Method of fabricating solar cell - Google Patents
Method of fabricating solar cellInfo
- Publication number
- JPS55140278A JPS55140278A JP4879179A JP4879179A JPS55140278A JP S55140278 A JPS55140278 A JP S55140278A JP 4879179 A JP4879179 A JP 4879179A JP 4879179 A JP4879179 A JP 4879179A JP S55140278 A JPS55140278 A JP S55140278A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- thin film
- electrode
- solar cell
- aluminum
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000000758 substrate Substances 0.000 abstract 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 4
- 239000010409 thin film Substances 0.000 abstract 4
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical compound CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 abstract 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 3
- 229910052782 aluminium Inorganic materials 0.000 abstract 2
- 239000011230 binding agent Substances 0.000 abstract 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 2
- 239000011863 silicon-based powder Substances 0.000 abstract 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 abstract 2
- 238000001354 calcination Methods 0.000 abstract 1
- 238000006243 chemical reaction Methods 0.000 abstract 1
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 239000000203 mixture Substances 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 239000007921 spray Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0368—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including polycrystalline semiconductors
- H01L31/03682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including polycrystalline semiconductors including only elements of Group IV of the Periodic Table
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/546—Polycrystalline silicon PV cells
Landscapes
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
PURPOSE:To provide inexpensively a Schottky type thin film solar cell by coating and calcining paste containing trace of aluminum powder defined in adding amount, silicon powder and organic binder on an aluminum substrate, heating the substrate to produce polycrystalline silicon thin film thereon, and forming a transparent electrode on the surface thereof. CONSTITUTION:Small amount of aluminum powder such as 0.0001-1 atom-% is added to n-type silicon powder, suitable amount of organic binder such as propylene glycol is added thereto, the mixture is kneaded to form paste state. This paste is coated thinly on an aluminum substrate 1, and the substrate 1 is heated at 530- 600 deg.C for 30min in N2 gas atmosphere to form a polycrystalline silicon thin film 2. Then, the substrate is then heated at approx. 400 deg.C for 10min in the air, a transparent SnO2 electrode is coated by spray process on the entire surface, and with the electrode 3 and the substrare 1 used as electrodes light 4 is incident to the electrode 3 side. Thus, a silicon thin film solar cell having 5% of conversion efficiency can be continuously produced.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4879179A JPS55140278A (en) | 1979-04-19 | 1979-04-19 | Method of fabricating solar cell |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4879179A JPS55140278A (en) | 1979-04-19 | 1979-04-19 | Method of fabricating solar cell |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS55140278A true JPS55140278A (en) | 1980-11-01 |
Family
ID=12813052
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4879179A Pending JPS55140278A (en) | 1979-04-19 | 1979-04-19 | Method of fabricating solar cell |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS55140278A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4390743A (en) * | 1980-09-20 | 1983-06-28 | Licentia Patent Verwaltungs-Gmbh | Silicon layer solar cell and method of producing it |
| EP0112480A2 (en) * | 1982-11-19 | 1984-07-04 | Siemens Aktiengesellschaft | Amorphous silicium solar cell |
-
1979
- 1979-04-19 JP JP4879179A patent/JPS55140278A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4390743A (en) * | 1980-09-20 | 1983-06-28 | Licentia Patent Verwaltungs-Gmbh | Silicon layer solar cell and method of producing it |
| EP0112480A2 (en) * | 1982-11-19 | 1984-07-04 | Siemens Aktiengesellschaft | Amorphous silicium solar cell |
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