CN112510157A - Method for preparing perovskite solar cell in large area through all air - Google Patents
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- 238000000034 method Methods 0.000 title claims abstract description 21
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- 239000010409 thin film Substances 0.000 claims abstract description 42
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 40
- 238000002360 preparation method Methods 0.000 claims abstract description 26
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- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 2
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- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- 229910052797 bismuth Inorganic materials 0.000 claims description 2
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims description 2
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 claims description 2
- 229910052794 bromium Inorganic materials 0.000 claims description 2
- 229910052792 caesium Inorganic materials 0.000 claims description 2
- TVFDJXOCXUVLDH-UHFFFAOYSA-N caesium atom Chemical compound [Cs] TVFDJXOCXUVLDH-UHFFFAOYSA-N 0.000 claims description 2
- PDZKZMQQDCHTNF-UHFFFAOYSA-M copper(1+);thiocyanate Chemical compound [Cu+].[S-]C#N PDZKZMQQDCHTNF-UHFFFAOYSA-M 0.000 claims description 2
- 229910052731 fluorine Inorganic materials 0.000 claims description 2
- 239000011737 fluorine Substances 0.000 claims description 2
- 229910052732 germanium Inorganic materials 0.000 claims description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 2
- PNDPGZBMCMUPRI-UHFFFAOYSA-N iodine Chemical compound II PNDPGZBMCMUPRI-UHFFFAOYSA-N 0.000 claims description 2
- 229910052698 phosphorus Inorganic materials 0.000 claims description 2
- 239000011574 phosphorus Substances 0.000 claims description 2
- 229920006393 polyether sulfone Polymers 0.000 claims description 2
- -1 polyethylene terephthalate Polymers 0.000 claims description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 claims description 2
- 239000005020 polyethylene terephthalate Substances 0.000 claims description 2
- 229920001721 polyimide Polymers 0.000 claims description 2
- 229910052700 potassium Inorganic materials 0.000 claims description 2
- 239000011591 potassium Substances 0.000 claims description 2
- 239000011347 resin Substances 0.000 claims description 2
- 229920005989 resin Polymers 0.000 claims description 2
- 229910052701 rubidium Inorganic materials 0.000 claims description 2
- IGLNJRXAVVLDKE-UHFFFAOYSA-N rubidium atom Chemical compound [Rb] IGLNJRXAVVLDKE-UHFFFAOYSA-N 0.000 claims description 2
- 229910052708 sodium Inorganic materials 0.000 claims description 2
- 239000011734 sodium Substances 0.000 claims description 2
- 229910052718 tin Inorganic materials 0.000 claims description 2
- 229910001887 tin oxide Inorganic materials 0.000 claims description 2
- 239000011787 zinc oxide Substances 0.000 claims description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims 1
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- 238000007790 scraping Methods 0.000 abstract description 4
- 238000000576 coating method Methods 0.000 description 22
- 239000011248 coating agent Substances 0.000 description 19
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- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 10
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- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 4
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- 238000006243 chemical reaction Methods 0.000 description 3
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
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- 238000005118 spray pyrolysis Methods 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- 239000004408 titanium dioxide Substances 0.000 description 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 2
- 239000011358 absorbing material Substances 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/10—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising heterojunctions between organic semiconductors and inorganic semiconductors
- H10K30/15—Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/10—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising heterojunctions between organic semiconductors and inorganic semiconductors
- H10K30/15—Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2
- H10K30/151—Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2 the wide bandgap semiconductor comprising titanium oxide, e.g. TiO2
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
- H10K71/13—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/40—Thermal treatment, e.g. annealing in the presence of a solvent vapour
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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Abstract
The invention discloses a method for preparing a perovskite solar cell in a large area in all air, wherein the whole preparation process is carried out in the air, and the method specifically comprises the following steps: (1) preparing an electron transport layer on a conductive substrate; (2) dropwise adding a perovskite precursor solution on the electron transport layer, moving a scraper to enable the perovskite precursor solution to form a film on the electron transport layer, and annealing in air to form a perovskite thin film; (3) and preparing a carbon electrode on the perovskite thin film, or preparing a hole transport layer and the carbon electrode on the perovskite thin film in sequence. The perovskite thin film is prepared in the air in the whole preparation process, an innovative scraping preparation mode is adopted to prepare the perovskite thin film, the preparation is simple and controllable, the repeatability is high, and the efficiency and the stability of the large-area perovskite solar cell are effectively improved.
Description
Technical Field
The invention relates to the technical field of solar cells, in particular to a method for preparing a perovskite solar cell in a large area by using all air.
Background
Solar energy is a renewable clean energy source, and the development of efficient and low-cost solar cells has become an effective means for people to fully utilize solar energy. The silicon-based solar cell is widely applied to the market due to the mature preparation process and currently occupies the leading position of the photovoltaic market. However, since silicon-based solar cells require high energy consumption and high cost of manufacturing processes, development of novel thin film solar cells with high efficiency and low cost has become an urgent need in the market.
Perovskite solar cells, as a third generation solar cell technology, utilize an organic metal halide semiconductor as a light absorbing material, and have attracted extensive research interest due to their characteristics of excellent carrier mobility, high absorption coefficient, low-cost solution processing, and the like. The perovskite solar cell has the photoelectric conversion efficiency of 3.8% in 2009 to more than 25% in 2020, and is close to the efficiency of the traditional crystalline silicon solar cell and cadmium telluride (CdTe) thin film solar cell, and the perovskite solar cell has the advantages of excellent photoelectric conversion efficiency and low cost preparation, has received great attention and active participation in the business industry, and becomes a novel thin film solar cell with great market potential.
In the preparation of the perovskite solar cell, the rapid crystallization film formation of the perovskite active layer is critical, especially for the film formation of large-area devices. The common perovskite film solution preparation method comprises a one-step method and a two-step method in an air or nitrogen glove box, and the perovskite film is prepared in a large area mostly by the one-step method due to the defects of multiple steps, incomplete reaction, poor repeatability and the like of the two-step method for preparing the perovskite film. The advantage of the one-step process in an air or nitrogen glove box is that at the later stage of coating the perovskite solution, the anti-solvent is added immediately to quickly saturate the perovskite solution, and then form crystal nuclei and crystallize into a film. In the preparation of large-area perovskite solar cell modules, printing methods including slit coating, blade coating, spraying and the like are generally adopted, and the crystal grain size, film forming uniformity and compactness of perovskite thin films obtained in different preparation environment atmospheres (glove boxes or air) are greatly different.
Disclosure of Invention
The present invention is directed to solving at least one of the problems of the prior art. Therefore, the invention provides a method for preparing a perovskite solar cell in a large area by using all air, which can improve the uniformity and the grain size of a large-area film of a perovskite thin film, realize low-cost and high-efficiency full-printing preparation and obtain the high-efficiency and stable large-area perovskite solar cell.
The invention provides a method for preparing a perovskite solar cell in a large area in all air, wherein the whole preparation process is carried out in the air, and the method specifically comprises the following steps:
(1) preparing an electron transport layer on a conductive substrate;
(2) dropwise adding a perovskite precursor solution on the electron transport layer, moving a scraper to enable the perovskite precursor solution to form a film on the electron transport layer, and annealing in air to form a perovskite thin film;
(3) and preparing a carbon electrode on the perovskite thin film, or preparing a hole transport layer and the carbon electrode on the perovskite thin film in sequence.
The method for preparing the perovskite solar cell in the full air large area according to the embodiment of the invention has at least the following beneficial effects:
according to the method for preparing the perovskite solar cell, the perovskite solar cell is prepared in the air in the whole process, the preparation conditions are not harsh, and the method is more suitable for large-scale industrial production compared with a nitrogen atmosphere preparation mode. The single blade coating method is difficult to realize the simultaneous and uniform dripping of liquid, and the first drop and the last drop are different in time, so that the uniform coating is difficult to ensure; the slit coating method can ensure uniform coating at the same time, but the slit coating method firstly needs to drip and fill the slit groove and then starts coating, so that more materials are consumed, and time and labor are consumed for cleaning the slit groove. The perovskite thin film is prepared in the embodiment of the invention in a blade coating mode, a dropwise adding mode is innovatively combined, the advantages of blade coating and slit coating are combined by adopting the innovative blade coating mode, the preparation method is simple and controllable, good in repeatability, high in stability of batch preparation of large-area components, and suitable for large-scale production in air, in addition, the preparation process is completed in one step, an anti-solvent is not required to be added in one step, the perovskite thin film with uniform film formation and large grain size can be rapidly crystallized, and the performance of the perovskite battery is favorably improved.
According to some embodiments of the invention, the preparation in step (1) and step (3) is performed in a printing mode. Examples of the printing method include slit coating, knife coating, and spray coating.
According to some embodiments of the invention, step (3) is: sequentially preparing a hole transport layer and a carbon electrode on the perovskite thin film, wherein the preparation process of the hole transport layer is as follows: and dropwise adding a solution of a hole transport layer on the perovskite thin film, and moving a scraper to enable the solution of the hole transport layer to form a film on the perovskite thin film.
According to some embodiments of the invention, the annealing in step (2) is performed at a temperature of 50 to 200 ℃.
According to some embodiments of the invention, the carbon electrode in step (3) is a low temperature carbon electrode. The low-temperature carbon electrode is formed by printing carbon slurry on the device and heating and curing at the temperature lower than 150 ℃. The low-temperature carbon paste takes a low-temperature organic solvent as a carrier, and if the carbon paste formed by volatile ethyl acetate with a low boiling point is used, the carbon paste can be printed at room temperature to form a film.
According to some embodiments of the invention, the conductive base comprises a substrate and a transparent conductive electrode.
According to some embodiments of the invention, the transparent conductive electrode is selected from any one of Indium Tin Oxide (ITO), fluorine doped tin oxide (FTO), aluminum doped zinc oxide (AZO).
According to some embodiments of the invention, the substrate is a flexible substrate or a rigid substrate; preferably, the material of the flexible substrate is selected from any one of polyimide, polyethylene terephthalate and polyether sulfone resin; preferably, the material of the rigid substrate is glass.
According to some embodiments of the invention, the area of the perovskite thin film is ≥ 10cm × 10 cm; preferably, the film thickness of the perovskite thin film is 200nm to 20000 nm; preferably, the material of the perovskite thin film is ABX3The perovskite type A comprises at least one of methylamine, formamidine, cesium, rubidium, potassium and sodium, the B comprises at least one of lead, tin, germanium and bismuth, and the X comprises at least one of iodine, bromine and chlorineOne of them is less.
According to some embodiments of the present invention, the material of the hole transport layer in step (3) is selected from one or two of PTAA, P3HT, CuSCN, Spiro-OMeTAD, phosphorus; preferably, the thickness of the hole transport layer is 5nm to 200 nm.
Drawings
The invention is further described with reference to the following figures and examples, in which:
FIG. 1 is an SEM photograph of the perovskite thin film prepared in example 1;
fig. 2 is a physical diagram of the carbon electrode perovskite solar cell prepared in example 1;
fig. 3 is a photograph of the carbon electrode perovskite solar cell prepared in example 2.
Detailed Description
The concept and technical effects of the present invention will be clearly and completely described below in conjunction with the embodiments to fully understand the objects, features and effects of the present invention. It is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all embodiments, and those skilled in the art can obtain other embodiments without inventive effort based on the embodiments of the present invention, and all embodiments are within the protection scope of the present invention.
Example 1
The embodiment provides a perovskite solar cell, the whole preparation process is carried out in the air, and the perovskite solar cell is prepared according to the following steps:
preparing 40nm dense titanium dioxide on an FTO glass substrate with the area of 10cm multiplied by 10cm by spray pyrolysis, and blade-coating a mesoporous layer TiO with the thickness of 300nm2Forming an electron transport layer, and then dropping a perovskite precursor solution on the electron transport layer, wherein the perovskite precursor solution is MAPbI in this embodiment3And (3) forming a film on the electron transport layer by the perovskite precursor solution by moving a scraper, annealing for 30min at 100 ℃ in the air to obtain a compact perovskite thin film, wherein an SEM image of the perovskite thin film is shown in figure 1, and the perovskite thin film prepared by the method is uniform in film formation and large in grain size.
And mixing graphite, carbon black, polymethyl methacrylate and isopropanol to form carbon slurry, and coating the prepared perovskite thin film with low-temperature carbon slurry as a carbon electrode by blade coating to prepare the carbon electrode perovskite solar cell, wherein the physical diagram of the carbon electrode perovskite solar cell is shown in fig. 2.
Example 2
The embodiment provides a perovskite solar cell, the whole preparation process is carried out in the air, and the perovskite solar cell is prepared according to the following steps:
preparing 40nm dense titanium dioxide on an ITO flexible substrate with the area of 10cm multiplied by 10cm by spray pyrolysis, and blade-coating a mesoporous layer TiO with the thickness of 300nm2Forming an electron transport layer, and then dropping a perovskite precursor solution on the electron transport layer, wherein the perovskite precursor solution is MAPbI in this embodiment3And (3) moving a scraper to enable the perovskite precursor solution to form a film on the electron transport layer, and annealing for 30min at 100 ℃ in the air to obtain the compact perovskite thin film.
Graphite, carbon black, polymethyl methacrylate and isopropanol are mixed to form carbon slurry, the prepared perovskite thin film is coated with low-temperature carbon slurry as a carbon electrode in a blade mode, and the prepared carbon electrode perovskite solar cell is shown in figure 3.
Example 3
The embodiment provides a perovskite solar cell, the whole preparation process is carried out in the air, and the perovskite solar cell is prepared according to the following steps:
tin dioxide SnO with the thickness of 30nm is coated on an FTO glass substrate with the area of 10cm multiplied by 10cm in a scraping mode in air2Forming an electron transport layer, and then dropping a perovskite precursor solution on the electron transport layer, wherein the perovskite precursor solution is MAPbI in this embodiment3And (3) moving a scraper to enable the perovskite precursor solution to form a film on the electron transport layer, and annealing for 30min at 100 ℃ in the air to obtain the compact perovskite thin film.
And mixing graphite, carbon black, polymethyl methacrylate and isopropanol to form carbon slurry, and coating the prepared perovskite thin film with low-temperature carbon slurry as a carbon electrode in a blade mode to prepare the carbon electrode perovskite solar cell.
Example 4
The embodiment provides a perovskite solar cell, the whole preparation process is carried out in the air, and the perovskite solar cell is prepared according to the following steps:
tin dioxide SnO with the thickness of 30nm is coated on an FTO glass substrate with the area of 10cm multiplied by 10cm in a scraping mode in air2Forming an electron transport layer, and then dropping a perovskite precursor solution on the electron transport layer, wherein the perovskite precursor solution is MAPbI in this embodiment3And (3) forming a film on the electron transport layer by the perovskite precursor solution by moving a scraper, annealing for 30min at 100 ℃ in the air to obtain a compact perovskite film, then dropwise adding a P3HT solution on the perovskite film, and printing the P3HT solution to form a P3HT hole transport layer with the thickness of 50nm by moving the scraper.
And mixing graphite, carbon black, polymethyl methacrylate and isopropanol to form carbon slurry, and coating the prepared P3HT hole transport layer with low-temperature carbon slurry as a carbon electrode by blade coating to prepare the carbon electrode perovskite solar cell.
Example 5
The embodiment provides a perovskite solar cell, the whole preparation process is carried out in the air, and the perovskite solar cell is prepared according to the following steps:
tin dioxide SnO with the thickness of 30nm is coated on an ITO flexible substrate with the area of 10cm multiplied by 10cm in a scraping mode in air2Forming an electron transport layer, and then dropping a perovskite precursor solution on the electron transport layer, wherein the perovskite precursor solution is MAPbI in this embodiment3And (3) moving a scraper to enable the perovskite precursor solution to form a film on the electron transport layer, and annealing for 30min at 100 ℃ in the air to obtain the compact perovskite thin film. The P3HT solution was then dropped onto the perovskite thin film and the doctor blade was moved so that the P3HT solution printed to form a P3HT hole transport layer of 50nm thickness.
And mixing graphite, carbon black, polymethyl methacrylate and isopropanol to form carbon slurry, and coating the prepared perovskite thin film with low-temperature carbon slurry as a carbon electrode in a blade mode to prepare the carbon electrode perovskite solar cell.
It should be understood, however, that the description herein of preferred embodiments of the present invention is not intended to limit the invention to the particular forms disclosed, but on the contrary, the intention is to cover all modifications, equivalents, and alternatives falling within the spirit and scope of the invention as defined by the appended claims. It will be understood by those skilled in the art that various changes and modifications may be made without departing from the spirit and scope of the invention as defined in the appended claims.
Claims (10)
1. The method for preparing the perovskite solar cell in a large area in all air is characterized in that the whole preparation process is carried out in the air, and specifically comprises the following steps:
(1) preparing an electron transport layer on a conductive substrate;
(2) dropwise adding a perovskite precursor solution on the electron transport layer, moving a scraper to enable the perovskite precursor solution to form a film on the electron transport layer, and annealing in air to form a perovskite thin film;
(3) and preparing a carbon electrode on the perovskite thin film, or preparing a hole transport layer and the carbon electrode on the perovskite thin film in sequence.
2. The all-air large-area production method of perovskite solar cell according to claim 1, wherein the way of production in step (1) and step (3) is printing.
3. The all-air large-area production method of perovskite solar cell according to claim 1, wherein the step (3) is: sequentially preparing a hole transport layer and a carbon electrode on the perovskite thin film, wherein the preparation process of the hole transport layer is as follows: and dropwise adding a solution of a hole transport layer on the perovskite thin film, and moving a scraper to enable the solution of the hole transport layer to form a film on the perovskite thin film.
4. The all-air large-area production method of perovskite solar cell according to any one of claims 1 to 3, wherein the temperature of the annealing in the step (2) is 50-200 ℃.
5. The all-air large area production method of perovskite solar cell according to any one of claims 1 to 3, wherein the carbon electrode in step (3) is a low temperature carbon electrode.
6. The all-air large area production perovskite solar cell as claimed in any one of claims 1 to 3, wherein the conductive substrate comprises a substrate and a transparent conductive electrode.
7. The all-air large area production method of perovskite solar cell according to claim 6, wherein the transparent conductive electrode is selected from any one of indium tin oxide, fluorine doped tin oxide, aluminum doped zinc oxide.
8. The all-air large area production perovskite solar cell as claimed in claim 6, wherein the substrate is a flexible substrate or a rigid substrate; preferably, the material of the flexible substrate is selected from any one of polyimide, polyethylene terephthalate and polyether sulfone resin; preferably, the material of the rigid substrate is glass.
9. The all-air large-area production method of perovskite solar cell according to any one of claims 1 to 3, wherein the area of the perovskite thin film is not less than 10cm x 10 cm; preferably, the film thickness of the perovskite thin film is 200nm to 20000 nm; preferably, the material of the perovskite thin film is ABX3The perovskite type comprises A and B, wherein A comprises at least one of methylamine, formamidine, cesium, rubidium, potassium and sodium, B comprises at least one of lead, tin, germanium and bismuth, and X comprises at least one of iodine, bromine and chlorine.
10. The all-air large area production method of perovskite solar cell according to any one of claims 1 to 3, wherein the material of the hole transport layer in step (3) is selected from one or two of PTAA, P3HT, CuSCN, Spiro-OMeTAD, phosphorus; preferably, the thickness of the hole transport layer is 5nm to 200 nm.
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| CN114583011A (en) * | 2022-03-02 | 2022-06-03 | 江西沃格光电股份有限公司 | Manufacturing method of perovskite solar cell based on all-inorganic material |
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