JPS6489568A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS6489568A
JPS6489568A JP62247624A JP24762487A JPS6489568A JP S6489568 A JPS6489568 A JP S6489568A JP 62247624 A JP62247624 A JP 62247624A JP 24762487 A JP24762487 A JP 24762487A JP S6489568 A JPS6489568 A JP S6489568A
Authority
JP
Japan
Prior art keywords
low
circuit
semiconductor
cvd method
pressure cvd
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62247624A
Other languages
Japanese (ja)
Inventor
Koji Okamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP62247624A priority Critical patent/JPS6489568A/en
Publication of JPS6489568A publication Critical patent/JPS6489568A/en
Pending legal-status Critical Current

Links

Classifications

    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Photovoltaic Devices (AREA)

Abstract

PURPOSE:To improve open-circuit voltage and short-circuit characteristics of a semiconductor device by forming a P-N junction and pasivation simultaneously in such a manner that material gases are changed in a vapor phase atmosphere to coat one surface of a semiconductor substrate of a first conductivity type with a semiconductor of a second conductivity type and then with an oxide. CONSTITUTION:A P-type silicon substrate 22 is etched at its surface and placed in a low-pressure CVD chamber. An N<+> polysilicon layer 23 is deposited by a low-pressure CVD method using SiH4 or PH3 gas. The N<+> polysilicon layer 23 is coated with silicon dioxide 24 by a low-pressure CVD method using SiH4 or O2 gas. The temperature for the CVD method is low enough to prevent thermal diffusion and thermal oxidation, so that semiconductor characteristics of the substrate will not be degraded. The doped polysilicon 23 provides high open-circuit voltage, while the silicon dioxide film 24 provides good open-circuit and short-circuit characteristics.
JP62247624A 1987-09-30 1987-09-30 Manufacture of semiconductor device Pending JPS6489568A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62247624A JPS6489568A (en) 1987-09-30 1987-09-30 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62247624A JPS6489568A (en) 1987-09-30 1987-09-30 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS6489568A true JPS6489568A (en) 1989-04-04

Family

ID=17166276

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62247624A Pending JPS6489568A (en) 1987-09-30 1987-09-30 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS6489568A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009131111A1 (en) * 2008-04-25 2009-10-29 株式会社アルバック Solar cell manufacturing method, solar cell manufacturing apparatus, and solar cell

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5282087A (en) * 1976-06-02 1977-07-08 Seiko Epson Corp Production of solar cell
JPS55160475A (en) * 1979-05-31 1980-12-13 Sharp Corp Amorphous thin film solar battery
JPS5651878A (en) * 1979-10-04 1981-05-09 Fuji Electric Co Ltd Manufacture of mis composition amorphous silicon solar cell
JPS5789270A (en) * 1980-09-26 1982-06-03 Unisearch Ltd Solar battery and method of producing same
JPS6145869A (en) * 1984-08-08 1986-03-05 Teijin Ltd Yarn switching method for winder of spindle drive type

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5282087A (en) * 1976-06-02 1977-07-08 Seiko Epson Corp Production of solar cell
JPS55160475A (en) * 1979-05-31 1980-12-13 Sharp Corp Amorphous thin film solar battery
JPS5651878A (en) * 1979-10-04 1981-05-09 Fuji Electric Co Ltd Manufacture of mis composition amorphous silicon solar cell
JPS5789270A (en) * 1980-09-26 1982-06-03 Unisearch Ltd Solar battery and method of producing same
JPS6145869A (en) * 1984-08-08 1986-03-05 Teijin Ltd Yarn switching method for winder of spindle drive type

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009131111A1 (en) * 2008-04-25 2009-10-29 株式会社アルバック Solar cell manufacturing method, solar cell manufacturing apparatus, and solar cell
JPWO2009131111A1 (en) * 2008-04-25 2011-08-18 株式会社アルバック SOLAR CELL MANUFACTURING METHOD, SOLAR CELL MANUFACTURING DEVICE, AND SOLAR CELL
US8198115B2 (en) 2008-04-25 2012-06-12 Ulvac, Inc. Solar cell, and method and apparatus for manufacturing the same

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