JPS5693376A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS5693376A JPS5693376A JP17014979A JP17014979A JPS5693376A JP S5693376 A JPS5693376 A JP S5693376A JP 17014979 A JP17014979 A JP 17014979A JP 17014979 A JP17014979 A JP 17014979A JP S5693376 A JPS5693376 A JP S5693376A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- amorphous
- thickness
- built
- vacuum chamber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 229910021417 amorphous silicon Inorganic materials 0.000 abstract 3
- 239000000758 substrate Substances 0.000 abstract 3
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 abstract 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 abstract 2
- 239000002184 metal Substances 0.000 abstract 2
- 229910052751 metal Inorganic materials 0.000 abstract 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 abstract 2
- 238000006243 chemical reaction Methods 0.000 abstract 1
- 230000008020 evaporation Effects 0.000 abstract 1
- 238000001704 evaporation Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 229910052697 platinum Inorganic materials 0.000 abstract 1
- 238000001556 precipitation Methods 0.000 abstract 1
- 229910001220 stainless steel Inorganic materials 0.000 abstract 1
- 239000010935 stainless steel Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Engineering & Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
PURPOSE:To obtain at low cost a stabilized solar battery which is high in an energy conversion efficiency by a method wherein a hydro-amorphous Si layer and an oxidized semiconductor layer respectively specified in thickness are lamination- formed on a conductive substrate, on which a metal layer is cover-attached. CONSTITUTION:The conductive substrate 11 made of a stainless steel applied a mirror surface finishing or Al is housed in a vacuum chamber in which Si to be made PH5 and target and H2 are received, the amorphous Si layer doped first on the substrate 11 by spattering is precipitated and then, a supply of PH5 is stopped to effect precipitation of the proper amorphous Si layer 14 on a layer 13. At this time, the thickness of those layer-built bodies 12 is made more than 0.1mum. Then, the layer-built body is transferred from the vacuum chamber into an evaporation device, the exidized semiconductor layer 15 of SnO2, TiO2, ZnO or the like which is made 10-1,000Angstrom or 50-500Angstrom in thickness is attached on the layer-built body, a metal layer 16 such as Pt, Au Pd is formed on the layer 15, and a collector 17 in comb-shape is formed on the layer 16 and covered with an anti-halation film 18.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17014979A JPS5693376A (en) | 1979-12-26 | 1979-12-26 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17014979A JPS5693376A (en) | 1979-12-26 | 1979-12-26 | Semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5693376A true JPS5693376A (en) | 1981-07-28 |
Family
ID=15899575
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17014979A Pending JPS5693376A (en) | 1979-12-26 | 1979-12-26 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5693376A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59132174A (en) * | 1983-01-19 | 1984-07-30 | Futaba Corp | Photovoltaic element |
| US4892594A (en) * | 1984-02-23 | 1990-01-09 | Canon Kabushiki Kaisha | Photovoltaic element |
| WO2009052511A2 (en) * | 2007-10-18 | 2009-04-23 | Belano Holdings, Ltd. | Mono-silicon solar cells |
| CN109309136A (en) * | 2018-10-12 | 2019-02-05 | 浙江大学 | A kind of ultra-thin MgO layer modification Cu2O planar heterojunction solar battery |
-
1979
- 1979-12-26 JP JP17014979A patent/JPS5693376A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59132174A (en) * | 1983-01-19 | 1984-07-30 | Futaba Corp | Photovoltaic element |
| US4892594A (en) * | 1984-02-23 | 1990-01-09 | Canon Kabushiki Kaisha | Photovoltaic element |
| WO2009052511A2 (en) * | 2007-10-18 | 2009-04-23 | Belano Holdings, Ltd. | Mono-silicon solar cells |
| WO2009052511A3 (en) * | 2007-10-18 | 2009-07-16 | Belano Holdings Ltd | Mono-silicon solar cells |
| US8349644B2 (en) | 2007-10-18 | 2013-01-08 | e-Cube Energy Technologies, Ltd. | Mono-silicon solar cells |
| CN109309136A (en) * | 2018-10-12 | 2019-02-05 | 浙江大学 | A kind of ultra-thin MgO layer modification Cu2O planar heterojunction solar battery |
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