JPS6046078A - Photovoltaic element and manufacture thereof - Google Patents
Photovoltaic element and manufacture thereofInfo
- Publication number
- JPS6046078A JPS6046078A JP58154446A JP15444683A JPS6046078A JP S6046078 A JPS6046078 A JP S6046078A JP 58154446 A JP58154446 A JP 58154446A JP 15444683 A JP15444683 A JP 15444683A JP S6046078 A JPS6046078 A JP S6046078A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor layer
- type semiconductor
- type
- gas
- incident light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 9
- 239000004065 semiconductor Substances 0.000 claims abstract description 90
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 13
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 claims description 11
- 238000000034 method Methods 0.000 claims description 11
- 229910000077 silane Inorganic materials 0.000 claims description 11
- 229910000078 germane Inorganic materials 0.000 claims description 4
- 230000002186 photoactivation Effects 0.000 claims 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 claims 1
- 239000000758 substrate Substances 0.000 abstract description 13
- 238000006243 chemical reaction Methods 0.000 abstract description 9
- 230000005855 radiation Effects 0.000 abstract description 4
- 238000010894 electron beam technology Methods 0.000 abstract description 3
- 239000000203 mixture Substances 0.000 abstract description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 abstract description 2
- 238000007599 discharging Methods 0.000 abstract description 2
- 229910052738 indium Inorganic materials 0.000 abstract description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 abstract description 2
- 238000000151 deposition Methods 0.000 abstract 1
- 230000002708 enhancing effect Effects 0.000 abstract 1
- 239000004020 conductor Substances 0.000 description 6
- 230000003247 decreasing effect Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 239000011521 glass Substances 0.000 description 3
- 239000002689 soil Substances 0.000 description 3
- 229910001220 stainless steel Inorganic materials 0.000 description 3
- 239000010935 stainless steel Substances 0.000 description 3
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- QUZPNFFHZPRKJD-UHFFFAOYSA-N germane Chemical compound [GeH4] QUZPNFFHZPRKJD-UHFFFAOYSA-N 0.000 description 1
- 229910052986 germanium hydride Inorganic materials 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PIN type
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
Abstract
Description
【発明の詳細な説明】
本発明は、Ｎ型半導体層を複数層積層して、入射光の放
射エネルギーを広範囲の波長にわたる入射光から吸収す
るようにした光起電力素子に関し、特に光電変換効率を
より高めて高出力を得るための光起電力素子及びその製
造方法に関するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a photovoltaic device in which a plurality of N-type semiconductor layers are laminated to absorb radiant energy of incident light over a wide range of wavelengths. The present invention relates to a photovoltaic device and a method of manufacturing the same for obtaining high output by increasing the power of the photovoltaic device.
最近、太陽電池の如き光起電力素子は光電変換効率を高
めるために、第１図に示したようにＰ型。Recently, photovoltaic devices such as solar cells have been converted into P-type devices, as shown in FIG. 1, in order to increase photoelectric conversion efficiency.
■型、Ｎ型の各半導体層Ｐ、Ｉ、Ｎを繰返し基板１上に
積層して多層構造とし、最外層には透明導電膜２及び電
極３を設けて、入射光の放射エネルギーを入射光の広範
囲の波長にわたり吸収するようにした素子が提案されて
いる。ところで、従来のこの種の光起電力素子は、Ｐ型
、Ｎ型、Ｎ型の各半導体層からなる下部層ＡのＮ型半導
体層Ｎ上に、Ｐ型、■型、Ｎ型の各半導体層からなる中
間部層ＢのＰ型半導体層Ｐが積層されている部分、及び
Ｐ型、■型、Ｎ型の各半導体層からなる中間部層ＢのＮ
型土導体層Ｎに、Ｐ型、Ｎ型、Ｎ型の各半導体層からな
る上部層ＣのＰ型土導体層Ｐが積層されている部分には
夫々接合層Ｊが存在し素子内部で電力損失が生じている
。また、この種の光起電力素子の従来の製造方法によれ
は、入射光の放射エネルギーを短波長から長波長にわた
る広い波長範囲で略一定量を吸収することができず、光
電変換効率の高い光起電力素子が得られながった。■ type and N type semiconductor layers P, I, and N are repeatedly laminated on the substrate 1 to form a multilayer structure, and the outermost layer is provided with a transparent conductive film 2 and an electrode 3 to convert the radiant energy of the incident light into Elements that absorb light over a wide range of wavelengths have been proposed. By the way, in a conventional photovoltaic element of this kind, P-type, ■-type, and N-type semiconductors are placed on an N-type semiconductor layer N of a lower layer A consisting of P-type, N-type, and N-type semiconductor layers. The part where the P-type semiconductor layer P of the intermediate layer B consisting of layers is laminated, and the N of the intermediate layer B consisting of P-type, ■-type, and N-type semiconductor layers.
A bonding layer J is present in each part where the P-type conductor layer P of the upper layer C consisting of P-type, N-type, and N-type semiconductor layers is stacked on the molded conductor layer N, and electric power is generated inside the device. There are losses. In addition, the conventional manufacturing method of this type of photovoltaic device is unable to absorb a substantially constant amount of the radiant energy of incident light over a wide wavelength range from short wavelengths to long wavelengths, resulting in a high photoelectric conversion efficiency. A photovoltaic device could not be obtained.
本発明は前記の問題に鑑み、Ｎ型半導体層とＰ型半導体
層との間に、短波長の入射光の放射エネルギーを吸収す
るＮ型半導体層、中波長の入射光の放射エネルギーを吸
収するＮ型半導体層、長波長の入射光の放射エネルギー
を吸収するＮ型半導体層を挾みこむことにより光電変換
効率を高め、またＮ型半導体層の形成過程では、形成さ
れる半導体層の厚さに関連して半導体層を形成させる混
合ガスの濃度比を平均的に増加又は減少させて広い波長
範囲の入射光の放射エネルギーを吸収させることにより
光電変換効率を一段と高め得る光起電力素子及びその製
造方法を提案するものである。In view of the above problems, the present invention provides an N-type semiconductor layer that absorbs the radiant energy of incident light with a short wavelength, and an N-type semiconductor layer that absorbs the radiant energy of incident light with a medium wavelength, between an N-type semiconductor layer and a P-type semiconductor layer. The photoelectric conversion efficiency is increased by interposing the N-type semiconductor layer, which absorbs the radiant energy of long-wavelength incident light, and in the process of forming the N-type semiconductor layer, the thickness of the formed semiconductor layer is A photovoltaic device capable of further increasing photoelectric conversion efficiency by absorbing radiant energy of incident light in a wide wavelength range by increasing or decreasing on average the concentration ratio of a mixed gas that forms a semiconductor layer, and its production. This paper proposes a method.
以下、図示の実施例を参照して本発明の詳細な説明する
。Hereinafter, the present invention will be described in detail with reference to illustrated embodiments.
第２図は本発明の光起電力素子（太陽電池）の描成図で
あって、１０はステンレススチールからなる基板、Ｐは
基板１０の表面に積層して形成したＰ型半導体層である
。このＰ型土導体層Ｐの表面には長波長の入射光の放射
エネルギーを吸収するＮ型半導体層Ｉ３が形成されてお
り、このＮ型半導体層１３の表面には中波長の入射光の
放射エネルギーを吸収するＮ型半導体層Ｉ２が形成され
ている。またＮ型半導体層Ｉ２の表面には短波長の入射
光の放射エネルギーを吸収するＮ型半導体層１１を形成
しており、更にこのＮ型半導体層１．の表面にはＮ型土
導体層Ｎが形成されている。更にまた、Ｎ型土導体層Ｎ
の表面には透明導電膜１１が形成されている。１２は透
明導電膜１１に電気的に接続した電極であって、これら
により光起電力素子が構成されて □いる。FIG. 2 is a schematic diagram of the photovoltaic device (solar cell) of the present invention, in which 10 is a substrate made of stainless steel, and P is a P-type semiconductor layer laminated on the surface of the substrate 10. On the surface of this P-type soil conductor layer P, an N-type semiconductor layer I3 that absorbs the radiant energy of long-wavelength incident light is formed, and on the surface of this N-type semiconductor layer 13, the radiant energy of medium-wavelength incident light is An N-type semiconductor layer I2 that absorbs energy is formed. Further, on the surface of the N-type semiconductor layer I2, an N-type semiconductor layer 11 that absorbs the radiant energy of short-wavelength incident light is formed, and furthermore, this N-type semiconductor layer 1. An N-type soil conductor layer N is formed on the surface. Furthermore, an N-type soil conductor layer N
A transparent conductive film 11 is formed on the surface. 12 is an electrode electrically connected to the transparent conductive film 11, and these constitute a photovoltaic element.
前述した機能を有するＮ型半導体層Ｎ、Ｉ型半導体層４
’＋ 、’２ 、’ｓ 及Ｕ Ｐ ’Ｍ 半導体Ｂ
Ｐ ハ、ＣＶＤ （ＣｈｃｎｕｃａｌＶａｐｏｒ Ｄｅ
ｐｏｓｉｔｉｏｎ）グロー放電法により形成することが
できる。以下にその光起電力素子の製造方法を説明する
。N-type semiconductor layer N and I-type semiconductor layer 4 having the above-described functions
'+,'2,'s and U P 'M semiconductor B
P Ha, CVD (Chcncal Vapor De
position) can be formed by a glow discharge method. The method for manufacturing the photovoltaic device will be explained below.
先ず、基板１０を図示しない真空容器内の対向する放電
電極の間に配置し、真空容器内にシランガス（Ｓｉｎ（
、）とジボランガス（Ｂ２ Ｈ６）との混合ガスを供給
して前記放電電極に高周波電圧を印加して混合ガスをグ
ロー放電させる。このグロー放電により基板１０上にＰ
型土導体層Ｐを形成させる。続いて今まで供給していた
混合ガスを排出し、新らたにシランガス（Ｓ ｒ Ｈ４
）とゲルマンガス（ＧｅＨ４）、又はシランガス（Ｓｉ
Ｈ４）とスタナーガス（Ｓ ｎＨ４）との混合ガスを供
給してグロー放電させて、Ｐ型この場合、混合ガスとし
てシランガス（ＳｉＩ（４）トゲルマンガス（ＧｅＨ４
）とを用いる場合には、横軸を混合ガス濃度比、縦軸を
半導体層の厚さで示した第３図（ａ）の如くＮ型半導体
層Ｉ３を形成する過程で、半導体層の厚さが７．０ＯＯ
Ａ に達するまで、シランガス（ＳｉＨ４）に対するゲ
ルマンガス（Ｇｃｌ−１４）の濃度比を９５％から０％
まで平均的に直線Ｉ！、の如く減少させてＮ型半導体層
Ｉ３を形成させる。このように混合ガスの濃度比を変化
させて形成したＮ型半導体層Ｉ３は、長波長の入射光と
、長波長に隣接した中波長一部を含む波長範囲の入射光
の散剤エネルギーを良好に吸収させることができる。First, the substrate 10 is placed between opposing discharge electrodes in a vacuum container (not shown), and silane gas (Sin) is injected into the vacuum container.
, ) and diborane gas (B2 H6) is supplied, and a high frequency voltage is applied to the discharge electrode to cause the mixed gas to glow discharge. This glow discharge causes P to be deposited on the substrate 10.
A mold conductor layer P is formed. Next, the mixed gas that had been supplied until now was discharged, and a new silane gas (S r H4
) and germane gas (GeH4), or silane gas (Si
Glow discharge is performed by supplying a mixed gas of H4) and stunner gas (S nH4), and in this case, the P-type is produced.
), in the process of forming the N-type semiconductor layer I3, the thickness of the semiconductor layer is Saga 7.0OO
The concentration ratio of germane gas (Gcl-14) to silane gas (SiH4) was increased from 95% to 0% until reaching A.
Average straight line I! , to form an N-type semiconductor layer I3. The N-type semiconductor layer I3, which is formed by changing the concentration ratio of the mixed gas in this way, can effectively absorb the powder energy of the incident light with a long wavelength and the incident light with a wavelength range that includes a part of the middle wavelength adjacent to the long wavelength. It can be absorbed.
このＮ型半導体層■３を形成させた後、Ｎ型半導体層Ｉ
３を形成するために供給していた混合ガスを排出して、
シランガス（ＳｉＨ４）の単独ガスを供給して、このガ
スをグロー放電させることによりＮ型半導体層の表面に
中波長の入射光の放射エネルギーを良く吸収するＮ型半
導体層Ｉ２を形成させる。After forming this N-type semiconductor layer 3, the N-type semiconductor layer I
Discharge the mixed gas that was supplied to form 3.
By supplying a single gas of silane gas (SiH4) and causing a glow discharge of this gas, an N-type semiconductor layer I2 that absorbs the radiant energy of medium-wavelength incident light well is formed on the surface of the N-type semiconductor layer.
その後、今まで供給していた混合ガスを排出した後、シ
ランガス（ＳｉＩ（４）にメタンガス（ＣＨ４）、又は
シランガス（Ｓ ｉＨ＜ ）にアンモニアガス（Ｎｌ−
１３）を加えた混合ガスを供給してこれをグロー放電さ
せ、Ｎ型半導体層Ｉ２の表面に短波長の入射光の放射エ
ネルギーを良く吸収するＩ型半導体層■１を形成させる
。この場合、混合ガスとしてシランガス（Ｓｉ”’＜）
トメタンガス（ＣＩ−１４）とを用いる場合には、横軸
を混合ガス濃度比、縦軸を半導体の厚さて示した第３図
（ｂｌの如く■型半導体層■１を形成する過程で、半導
体層の厚さが７００人に達するまで、シランカス（Ｓｉ
ｌ−Ｉ４）に対するメタンガス（ＣＩ−Ｉ、）の濃度比
を０％から７５％まで平均的に直線１２に示す如く増加
させて■型半導体層■１を形成させる。このように混合
ガスの濃度比を増加させて形成したＩ型半導体層■３は
、短波長の入射光と短波長に隣接した中波長の一部を含
む波長範囲の入射光の放射エネルギーを良好に吸収させ
ることができる。更にこのｌ型半導体層１１を形成させ
た後、今まで供給していた混合ガスを排出して、シラン
ガス（ＳｉＩＩ４）とメタンガス（Ｃ１（４）とホスフ
ィンガス（１’１−Ｉ３）とを加えた混合ガスを供給し
てグロー放電させ、ｌ型半導体層１１の表面にＮ型半導
体層Ｎを形成させる。最後にこれらの半導体層が積層さ
れた基板１０を真空容器から取り出して図示しない別の
電子ビーム蒸着装置に収容し、そして電子ビームにより
インジュームと錫との混合物を、基板１０Ｊ二に積層し
た最外側のＮ型半導体層Ｎの表面に蒸着させて透明電極
１１を形成させる。その後に適宜手段で電極１２を設け
て本発明に係る光起電力素子を得る。After that, after discharging the mixed gas that had been supplied until now, silane gas (SiI(4) and methane gas (CH4), or silane gas (SiH<) and ammonia gas (Nl-
13) is supplied to generate a glow discharge, thereby forming an I-type semiconductor layer (1) on the surface of the N-type semiconductor layer I2, which absorbs the radiant energy of short-wavelength incident light well. In this case, silane gas (Si"'<) is used as the mixed gas.
When tomethane gas (CI-14) is used, in the process of forming the ■-type semiconductor layer ■1 as shown in Figure 3 (bl), where the horizontal axis shows the mixed gas concentration ratio and the vertical axis shows the semiconductor thickness, Silancus (Si) until the thickness of the semiconductor layer reaches 700
The concentration ratio of methane gas (CI-I, ) to l-I4) is increased on average from 0% to 75% as shown by a straight line 12 to form a ■-type semiconductor layer ■1. The I-type semiconductor layer 3 formed by increasing the concentration ratio of the mixed gas in this way can effectively absorb the radiant energy of incident light in a wavelength range that includes short-wavelength incident light and a part of medium-wavelength adjacent to the short wavelength. can be absorbed into. Furthermore, after this l-type semiconductor layer 11 was formed, the mixed gas that had been supplied so far was discharged, and silane gas (SiII4), methane gas (C1 (4), and phosphine gas (1'1-I3) were added). A mixed gas is supplied to cause glow discharge, and an N-type semiconductor layer N is formed on the surface of the L-type semiconductor layer 11.Finally, the substrate 10 on which these semiconductor layers are stacked is taken out from the vacuum container and subjected to another process (not shown). It is housed in an electron beam evaporation device, and a mixture of indium and tin is evaporated by the electron beam onto the surface of the outermost N-type semiconductor layer N laminated on the substrate 10J2 to form the transparent electrode 11. Thereafter, the transparent electrode 11 is formed. Electrodes 12 are provided by appropriate means to obtain a photovoltaic device according to the present invention.
このように構成された光起電力素子は、透明導電膜１１
側から太陽光線等の光を入射させることにに到達する。The photovoltaic element configured in this way has a transparent conductive film 11
The goal is to let light such as sunlight enter from the side.
この光線の通過時にＩ型半導体層■１は短波長と短波長
に隣接した中波長の一部を含む波長範囲の入射光の放射
エネルギーを最も良く吸収し、ｌ型半導体層１２は中波
長の入射光の放射エネルギーを最も良く吸収する。また
ｌ型半導体層１３は長波長と長波長に隣接した中波長の
一部を含む波長範囲の入射光の放射エネルギーを最も良
く吸収する。そのため第４図に示すように、■型半導体
農工□と１２とて得られる放射エネルギー吸収量 １性
曲線ＩＡとＩＢにより形成される谷部Ｖ、の減衰特性は
、前記混合ガスの濃度比を変化させたことにより放射エ
ネルギーの吸収量が高められて、谷部■１は点線て示す
曲線Ｘの如くレベルアップされる。During the passage of this light beam, the I-type semiconductor layer 1 best absorbs the radiant energy of the incident light in the wavelength range that includes the short wavelength and a part of the medium wavelength adjacent to the short wavelength, and the I-type semiconductor layer 12 Best absorbs the radiant energy of the incident light. Further, the l-type semiconductor layer 13 best absorbs the radiation energy of incident light in a wavelength range including a long wavelength and a part of a medium wavelength adjacent to the long wavelength. Therefore, as shown in FIG. Due to this change, the amount of radiant energy absorbed is increased, and the level of the valley part (1) is raised as shown by the dotted curve X.
またＩ型半導体層Ｉ２と工。とで得られる放射エネルギ
ーの吸収特性曲線１１３とＩＧとにより形成される谷部
■２の減衰特性は、前記混合ガスの濃度比を変化させた
ことにより放射エネルギーの吸収量か高められて谷部■
２は点線で示す曲線Ｙの如くレベルアップされる。それ
故、入射光は短波長の範囲から長波長の範囲にわたり第
５図に示すような略一定した放射エネルギー吸収特性と
なる。従って、入射光から多量の放射エネルギーを無駄
な（吸収して光電変換効率の高い光起電力素子か得られ
る。In addition, the I-type semiconductor layer I2 is formed. The attenuation characteristic of the valley part (2) formed by the radiant energy absorption characteristic curve 113 obtained by ■
2 is leveled up as shown by a curve Y indicated by a dotted line. Therefore, the incident light has a substantially constant radiant energy absorption characteristic as shown in FIG. 5 from a short wavelength range to a long wavelength range. Therefore, a photovoltaic element with high photoelectric conversion efficiency can be obtained by absorbing a large amount of radiant energy from the incident light.
また、本発明の光起電力素子は、Ｐ型半導体層ＰとＮ型
半導体層Ｎとの接合部Ｊが存在しないので、それらの半
導体層の接合部による素子内部での電力損失は生じない
。また入射光は積層された■型半導体層■Ｉ＋Ｉ２．■
３により、入射光の短波長から長波長にわたる広い波長
範囲を略一定した放射エネルギー量を得て光電変換効率
を一段と上昇させることができる。Further, in the photovoltaic device of the present invention, since there is no junction J between the P-type semiconductor layer P and the N-type semiconductor layer N, no power loss occurs inside the device due to the junction between these semiconductor layers. In addition, the incident light is applied to the laminated ■ type semiconductor layer ■I+I2. ■
3, it is possible to obtain a substantially constant amount of radiant energy over a wide wavelength range from short wavelengths to long wavelengths of incident light, thereby further increasing the photoelectric conversion efficiency.
なお本実施例では基板１０にステンレススチールを用い
たが、第６図に示すようにガラス板Ｇを使用することも
できる。ガラス板Ｇを基板１０とした場合には積層した
Ｉ型半導体層Ｉ、 、 Ｉ２． Ｉ３の光入射側にガラ
ス板Ｇ、透明導電膜１１及びＰ型半導体層Ｐを形成して
光入射側と反対側にＮ型半導体層Ｎ及び金属（電極）Ｍ
を設けれはよい。一方、混合ガスの濃度比は直線状で増
加又は減少させても良く、あるいは階段状で増加又は減
少させてもよい。更には直線状又は階段状で増加又は減
少させる途中で一時的に停滞する状態があってもよく、
これらのような平均的増加又は減少の場合はいずれも同
様の効果を得ることができる。Although stainless steel is used for the substrate 10 in this embodiment, a glass plate G can also be used as shown in FIG. When the glass plate G is used as the substrate 10, the laminated I-type semiconductor layers I, , I2. A glass plate G, a transparent conductive film 11, and a P-type semiconductor layer P are formed on the light incidence side of I3, and an N-type semiconductor layer N and a metal (electrode) M are formed on the opposite side to the light incidence side.
It is good to have a On the other hand, the concentration ratio of the mixed gas may be increased or decreased linearly, or may be increased or decreased stepwise. Furthermore, there may be a state in which there is a temporary stagnation while increasing or decreasing in a linear or stepwise manner,
Similar effects can be obtained in both cases of average increase or decrease.
以上詳述したように、本発明の光起電力素子には、Ｐ型
半導体層とＮ型半導体層の接合部か存在しないので、そ
の接合部による素子内部での電力損失は生じない。また
■型半導体層は、夫々か異なる波長の入射光の放射エネ
ルギーを吸収する複数のＩ型半導体層が積層されたもの
からなっているので、短波長から長波長にわたる広い波
長範囲の入射光の放射エネルギーを略一定して吸収する
ことができ、光電変換効率が高い高出力の光起電力素子
を提供できる。また本発明の光起電力素子の製造方法に
よれば、Ｉ型半導体層を形成する過程で、形成される半
導体層の厚さに追随して混合ガスの濃度比を平均的に増
加又は減少させることにより、放射エネルギーの吸収量
を大幅に増加させることができ、製造設備に大きな変更
を加えず、且つ簡単なガス量の操作により達成が可能と
なり、経済的に光起電力素子の光電変換効率を向上させ
ることができる等、産業上の利益は大きい。As described in detail above, since the photovoltaic device of the present invention does not have a junction between the P-type semiconductor layer and the N-type semiconductor layer, no power loss occurs inside the device due to the junction. In addition, the ■-type semiconductor layer is made up of a stack of multiple I-type semiconductor layers that absorb the radiant energy of incident light of different wavelengths, so it absorbs incident light in a wide wavelength range from short wavelengths to long wavelengths. It is possible to provide a high-output photovoltaic element that can absorb radiant energy substantially constantly and has high photoelectric conversion efficiency. Further, according to the method for manufacturing a photovoltaic device of the present invention, in the process of forming an I-type semiconductor layer, the concentration ratio of the mixed gas is increased or decreased on average in accordance with the thickness of the semiconductor layer to be formed. As a result, the amount of absorbed radiant energy can be significantly increased, and this can be achieved without making major changes to the manufacturing equipment and by simply controlling the gas amount, thereby economically increasing the photoelectric conversion efficiency of photovoltaic elements. The industrial benefits are significant, such as the ability to improve
第１図は従来の光起電力素子の断面構造図、第２図は本
発明に係る光起電力素子の断面構造図、第３図はＩ型半
導体層形成時の半導体層厚さと混合ガスの濃度比の関係
を示す特性図、第４図は本発明の光起電力素子の各Ｉ型
半導体層の放射エネルギー吸収特性曲線図、第５図はＩ
型半導体層の放射エネルギー総合吸収特性図、第６図は
本発明に係る光起電力素子の他の実施例を示した断面構
造図である。
１０・・・基板（ステンレス反チール）１１・・・透明
導電膜 １２・・・電極 Ｐ・・・Ｐ型半導体層 ｉ、
・・・短波長の入射光の放射エネルギーを吸収するＩｙ
！１半容体層、■２・・中波長の入射光の放射エネルギ
ーを吸収する■型半導体層
■、・・・長波長の入射光の放射エネルギーを吸収する
■型半導体層
Ｎ・・・Ｎ型半導体層
Ｊ・・・Ｐ型半導体層とＮ型半導体層との接合部代理人
弁理士 中 井 宏
第２図 第１図
第８図
第８図
六佑倣１皮カー〆り！ｘ噌ＯＯ
シラン力λ令メタ）吠Ｃ入
第４図
一抵長Ｎ杭り液長 上疫長−
１（FIG. 1 is a cross-sectional structural diagram of a conventional photovoltaic device, FIG. 2 is a cross-sectional structural diagram of a photovoltaic device according to the present invention, and FIG. FIG. 4 is a characteristic diagram showing the relationship between concentration ratios, FIG.
FIG. 6 is a cross-sectional structural diagram showing another embodiment of the photovoltaic device according to the present invention. 10... Substrate (stainless steel anti-teal) 11... Transparent conductive film 12... Electrode P... P-type semiconductor layer i,
...Iy that absorbs the radiant energy of short wavelength incident light
! 1 Half volume layer, ■2... ■-type semiconductor layer that absorbs the radiant energy of incident light with a medium wavelength ■,... ■-type semiconductor layer that absorbs the radiant energy of long-wavelength incident light N... N-type Semiconductor layer J: Agent for the junction between the P-type semiconductor layer and the N-type semiconductor layer Patent attorney Hiroshi Nakai Figure 2 Figure 1 Figure 8 Figure 8 x OO Silan force
Claims (1)
光を吸収する複数のＮ型半導体層を順次に積層し、さら
に積層した最終Ｎ型半導体層上に、前記第１の半導体層
と異なるＰ型又はＮ型層の第２の半導体層を積層した光
起電力素子。 ２、 プラズマＣＶＤ法により形成されて、Ｎ型半導体
層とＰ型半導体層との間に夫々が異なる波長の光を吸収
する複数のＮ型半導体層を積層させてなる光起電力素子
の製造方法において、前記Ｎ型半導体層は該半導体層を
形成する過程で、シランガスとゲルマンガスとを用いる
場合は形成される半導体層の厚さが７００ＯＡ までゲ
ルマンガスの濃度比を９５％から０％まで平均的に減少
させ、またシランガスとメタンガスとからなる混合ガス
を用いる場合は、形成される半導体層の厚さが７０ｏ久
まてメタンガスの濃度比を０％から７５％まで平均的に
増加させる光起電力素子の製造方法。[Claims] 1. A plurality of N-type semiconductor layers absorbing light of different wavelengths are sequentially laminated on a first semiconductor layer of an N-type or P-type layer, and a final N-type semiconductor layer is further laminated. A photovoltaic element in which a second semiconductor layer, which is a P-type or an N-type layer different from the first semiconductor layer, is laminated thereon. 2. A method for manufacturing a photovoltaic element formed by a plasma CVD method, in which a plurality of N-type semiconductor layers are stacked between an N-type semiconductor layer and a P-type semiconductor layer, each of which absorbs light of a different wavelength. In the process of forming the N-type semiconductor layer, when using silane gas and germane gas, the concentration ratio of germane gas is adjusted from 95% to 0% on average until the thickness of the formed semiconductor layer is 700 OA. In addition, when using a mixed gas consisting of silane gas and methane gas, the thickness of the semiconductor layer formed increases by 70 degrees, and photoactivation increases the concentration ratio of methane gas from 0% to 75% on average. A method of manufacturing a power device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58154446A JPS6046078A (en) | 1983-08-23 | 1983-08-23 | Photovoltaic element and manufacture thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58154446A JPS6046078A (en) | 1983-08-23 | 1983-08-23 | Photovoltaic element and manufacture thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6046078A true JPS6046078A (en) | 1985-03-12 |
Family
ID=15584383
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58154446A Pending JPS6046078A (en) | 1983-08-23 | 1983-08-23 | Photovoltaic element and manufacture thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6046078A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0195770U (en) * | 1987-12-17 | 1989-06-26 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56100486A (en) * | 1980-01-14 | 1981-08-12 | Fuji Photo Film Co Ltd | Photoelectric conversion element |
| JPS5779672A (en) * | 1980-09-09 | 1982-05-18 | Energy Conversion Devices Inc | Photoresponsive amorphous alloy and method of producing same |
-
1983
- 1983-08-23 JP JP58154446A patent/JPS6046078A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56100486A (en) * | 1980-01-14 | 1981-08-12 | Fuji Photo Film Co Ltd | Photoelectric conversion element |
| JPS5779672A (en) * | 1980-09-09 | 1982-05-18 | Energy Conversion Devices Inc | Photoresponsive amorphous alloy and method of producing same |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0195770U (en) * | 1987-12-17 | 1989-06-26 |
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