JPS5920237U

JPS5920237U - Amorphous silicon photoreceptor

Info

Publication number: JPS5920237U
Application number: JP11431382U
Authority: JP
Inventors: 克己鈴木
Original assignee: 株式会社東芝
Priority date: 1982-07-28
Filing date: 1982-07-28
Publication date: 1984-02-07

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

[Brief explanation of drawings]

第１図は従来の感光体におけるコピ一枚数と表面電位お
よび残留電位とのそれぞれの関係を示す図、第２図は本
考案の一実施例を示す縦断面図、第３図は同実施例の感
光体におけるコピ一枚数と表面電位および残留電位との
それぞれの関係を示す図である。１・・・導電性基板（ＡＩドラム基板）、２・・・電荷
注入阻止層、３・・・アモルファスシリコン光導電性層
、４・・・表面被覆層。補正　昭５７．１２．　９実用新案登録請求の範囲を次のように補正する。Ｏ実用新案登録請求の範囲（１）導電性基板上に、電荷注入阻止層、水素またハハ
ロゲンを含むアモルファスシリコン光導電性層および表
面被覆層をこの順に積層してなるアモルファスシリコン
感光体において、上記電荷注入阻止層および表面被覆層
がＳｉを含む光導電性材料からなることを特徴とするア
モルファスシリコン感光体。（２）電荷注入阻止層および表面被覆層はＮ、０゜Ｃの
いずれか１つ以上を含むアモルファスシリコン光導電性
材料からなる実用新案登録請求の範囲第１項記載のアモ
ルファスシリコン感光体。（３）　　電荷注入阻止層および表面被覆層はＣを含み
、そのＣの量がＳｉ原子に対して３０〜９Ｑａｔｏｍｉ
ｃ％である実用新案登録請求の範囲第１項または第２項
記載のアモルファスシリコン感光体。（４）電荷注入阻止層および表面被覆層はＮを含み、そ
のＮの量がＳｉ原子に対して２０〜７Ｑａｔｏｍｉｃ％
である実用新案登録請求の範囲第１項ないし第３項のい
ずれかに記載のアモルファスシリコン感光体。（５）電荷注入阻止層および表面被覆層はＯを含み、そ
のＯの量がＳｉ原子に対して１０〜７０ａｔｏｍｉｃ％
である実用新案登録請求の範囲第１項ないし第４項のい
ずれかに記載のアモルファスシリコン感光体。（６）電荷注入阻止層および表面被覆層は共にＮ。０、Ｃのいずれか１つ以上含むアモルファスシリコン光
導電性材料によって１００〜３０００Ａの層厚に形成さ
れ、かつアモルファスシリコン光導電性層は５〜２０μ
ｍの層厚に形成された実用新案登録請求の範囲第１項記
載のアモルファスシリコン感光体。Fig. 1 is a diagram showing the relationship between the number of copies per copy, surface potential, and residual potential in a conventional photoreceptor, Fig. 2 is a longitudinal cross-sectional view showing an embodiment of the present invention, and Fig. 3 is a diagram showing the same embodiment. FIG. 3 is a diagram showing the relationship between the number of copies, surface potential, and residual potential of a photoreceptor. DESCRIPTION OF SYMBOLS 1... Conductive substrate (AI drum substrate), 2... Charge injection blocking layer, 3... Amorphous silicon photoconductive layer, 4... Surface coating layer. Correction 1982.12. 9. The scope of claims for utility model registration shall be amended as follows. O Utility Model Registration Claims (1) An amorphous silicon photoreceptor comprising a charge injection blocking layer, an amorphous silicon photoconductive layer containing hydrogen or halide, and a surface coating layer laminated in this order on a conductive substrate, An amorphous silicon photoreceptor characterized in that a charge injection blocking layer and a surface coating layer are made of a photoconductive material containing Si. (2) The amorphous silicon photoreceptor according to claim 1, wherein the charge injection blocking layer and the surface coating layer are made of an amorphous silicon photoconductive material containing at least one of N and 0°C. (3) The charge injection blocking layer and the surface coating layer contain C, and the amount of C is 30 to 9 Qatomi with respect to Si atoms.
c %. (4) The charge injection blocking layer and the surface coating layer contain N, and the amount of N is 20 to 7 Qatomic% with respect to Si atoms.
An amorphous silicon photoreceptor according to any one of claims 1 to 3 of the utility model registration claims. (5) The charge injection blocking layer and the surface coating layer contain O, and the amount of O is 10 to 70 atomic% with respect to Si atoms.
An amorphous silicon photoreceptor according to any one of claims 1 to 4 of the utility model registration claims. (6) Both the charge injection blocking layer and the surface coating layer are made of N. The amorphous silicon photoconductive layer is formed with a layer thickness of 100 to 3000A using an amorphous silicon photoconductive material containing one or more of 0 and C, and the amorphous silicon photoconductive layer has a thickness of 5 to 20μ
The amorphous silicon photoreceptor according to claim 1, wherein the amorphous silicon photoreceptor is formed to have a layer thickness of m.

Claims

[Scope of utility model registration request]

(1) In an amorphous silicon photoreceptor in which a charge injection blocking layer, an amorphous silicon photoconductive layer containing hydrogen or halogen, and a surface coating layer are laminated in this order on a conductive substrate, the charge injection blocking layer and surface coating are laminated in this order. An amorphous silicon photoreceptor characterized in that the layer is made of a photoconductive material containing Si.

(2) The charge injection blocking layer and the surface coating layer contain N and O. The amorphous silicon photoconductor according to claim 1, which is made of an amorphous silicon photoconductive material containing any one or more of C.

(3) The amorphous silicon photosensitive material according to claim 1 or 2, wherein the charge injection blocking layer and the surface coating layer contain C, and the amount of C is 30 to 9 Qatmic% based on Si atoms. body.

(4) The charge injection blocking layer and the surface coating layer contain N, and the amount of N is 20 to 7 Qatmic with respect to Si atoms.
% of the amorphous silicon photoconductor according to any one of claims 1 to 3.

(5) The charge injection blocking layer and the surface coating layer contain O, and the amount of O is 10 to 7 Qatmic% with respect to Si atoms.
An amorphous silicon photoreceptor according to any one of claims 1 to 4 of the utility model registration claims. −

(6) Both the charge injection blocking layer and the surface coating layer are N. The amorphous silicon photoconductive material is formed with a layer thickness of 100 to 3000 μm, and the amorphous silicon photoconductive layer has a thickness of 5 to 20 μm.
The amorphous silicon photoreceptor according to claim 1, wherein the amorphous silicon photoreceptor is formed to have a layer thickness of m.