EP0100571A3 - Low resistance buried power bus for integrated circuits - Google Patents

Low resistance buried power bus for integrated circuits Download PDF

Info

Publication number
EP0100571A3
EP0100571A3 EP83201029A EP83201029A EP0100571A3 EP 0100571 A3 EP0100571 A3 EP 0100571A3 EP 83201029 A EP83201029 A EP 83201029A EP 83201029 A EP83201029 A EP 83201029A EP 0100571 A3 EP0100571 A3 EP 0100571A3
Authority
EP
European Patent Office
Prior art keywords
low resistance
integrated circuits
power bus
layer
buried power
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP83201029A
Other languages
German (de)
French (fr)
Other versions
EP0100571A2 (en
Inventor
Clarence A. Lund
Michael D. Sugino
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Motorola Solutions Inc
Original Assignee
Motorola Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Motorola Inc filed Critical Motorola Inc
Publication of EP0100571A2 publication Critical patent/EP0100571A2/en
Publication of EP0100571A3 publication Critical patent/EP0100571A3/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/528—Geometry or layout of the interconnection structure
    • H01L23/5286—Arrangements of power or ground buses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/535—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including internal interconnections, e.g. cross-under constructions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Geometry (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Element Separation (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)

Abstract

In a channel (12) formed in one surface of a semiconduc­ tor substrate (10) having a first conductivity, e.g. N type, a layer of material (14) having a second conductivity type, e.g. P type boron, and a layer of relatively low resistance material (20) such as Tungsten in contact with the first layer (14) but insulated from the substrate (10). Second conductivity type tubs (28) and the like can be formed adjacent the bus (18) and in direct contact therewith through the first layer (14).
EP83201029A 1982-07-30 1983-07-12 Low resistance buried power bus for integrated circuits Withdrawn EP0100571A3 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US06/404,264 US4503451A (en) 1982-07-30 1982-07-30 Low resistance buried power bus for integrated circuits
US404264 1982-07-30

Publications (2)

Publication Number Publication Date
EP0100571A2 EP0100571A2 (en) 1984-02-15
EP0100571A3 true EP0100571A3 (en) 1985-10-30

Family

ID=23598889

Family Applications (1)

Application Number Title Priority Date Filing Date
EP83201029A Withdrawn EP0100571A3 (en) 1982-07-30 1983-07-12 Low resistance buried power bus for integrated circuits

Country Status (3)

Country Link
US (1) US4503451A (en)
EP (1) EP0100571A3 (en)
JP (1) JPS5943552A (en)

Families Citing this family (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4683488A (en) * 1984-03-29 1987-07-28 Hughes Aircraft Company Latch-up resistant CMOS structure for VLSI including retrograded wells
US4689656A (en) * 1984-06-25 1987-08-25 International Business Machines Corporation Method for forming a void free isolation pattern and resulting structure
US4631570A (en) * 1984-07-03 1986-12-23 Motorola, Inc. Integrated circuit having buried oxide isolation and low resistivity substrate for power supply interconnection
FR2569055B1 (en) * 1984-08-07 1986-12-12 Commissariat Energie Atomique CMOS INTEGRATED CIRCUIT AND METHOD FOR MANUFACTURING ELECTRICAL ISOLATION AREAS IN THIS INTEGRATED CIRCUIT
GB2186424A (en) * 1986-01-30 1987-08-12 Plessey Co Plc Method for producing integrated circuit interconnects
US4980747A (en) * 1986-12-22 1990-12-25 Texas Instruments Inc. Deep trench isolation with surface contact to substrate
FR2616011B1 (en) * 1987-05-26 1989-09-08 Matra Harris Semiconducteurs INTEGRATED CIRCUIT WITH UNDERGROUND INTERCONNECTIONS AND METHOD FOR MANUFACTURING SUCH A CIRCUIT
US4912535A (en) * 1987-08-08 1990-03-27 Mitsubishi Denki Kabushiki Kaisha Trench type semiconductor memory device having side wall contact
GB2212977B (en) * 1987-11-25 1991-01-23 Marconi Electronic Devices Semiconductor arrangement
US4939567A (en) * 1987-12-21 1990-07-03 Ibm Corporation Trench interconnect for CMOS diffusion regions
US5023200A (en) * 1988-11-22 1991-06-11 The United States Of America As Represented By The United States Department Of Energy Formation of multiple levels of porous silicon for buried insulators and conductors in silicon device technologies
DE3931381A1 (en) * 1989-09-20 1991-03-28 Siemens Ag Extra interconnect level in silicon integrated circuit - consists of opposite conductivity type from substrate and contacted layers in trenches
US5248894A (en) * 1989-10-03 1993-09-28 Harris Corporation Self-aligned channel stop for trench-isolated island
US5057895A (en) * 1990-08-06 1991-10-15 Harris Corporation Trench conductor and crossunder architecture
US5196373A (en) * 1990-08-06 1993-03-23 Harris Corporation Method of making trench conductor and crossunder architecture
JP3332456B2 (en) * 1992-03-24 2002-10-07 株式会社東芝 Semiconductor device manufacturing method and semiconductor device
US5340754A (en) * 1992-09-02 1994-08-23 Motorla, Inc. Method for forming a transistor having a dynamic connection between a substrate and a channel region
US5420061A (en) * 1993-08-13 1995-05-30 Micron Semiconductor, Inc. Method for improving latchup immunity in a dual-polysilicon gate process
JP2684979B2 (en) * 1993-12-22 1997-12-03 日本電気株式会社 Semiconductor integrated circuit device and method of manufacturing the same
US5849621A (en) * 1996-06-19 1998-12-15 Advanced Micro Devices, Inc. Method and structure for isolating semiconductor devices after transistor formation
US5972758A (en) * 1997-12-04 1999-10-26 Intel Corporation Pedestal isolated junction structure and method of manufacture
US6696746B1 (en) 1998-04-29 2004-02-24 Micron Technology, Inc. Buried conductors
US6025261A (en) 1998-04-29 2000-02-15 Micron Technology, Inc. Method for making high-Q inductive elements
US7045468B2 (en) * 1999-04-09 2006-05-16 Intel Corporation Isolated junction structure and method of manufacture
US6624515B1 (en) 2002-03-11 2003-09-23 Micron Technology, Inc. Microelectronic die including low RC under-layer interconnects
US7102167B1 (en) * 2002-04-29 2006-09-05 Micrel, Inc. Method and system for providing a CMOS output stage utilizing a buried power buss
JP2007194259A (en) * 2006-01-17 2007-08-02 Toshiba Corp Semiconductor device, and method of manufacturing same
US7982284B2 (en) * 2006-06-28 2011-07-19 Infineon Technologies Ag Semiconductor component including an isolation structure and a contact to the substrate
US7691734B2 (en) * 2007-03-01 2010-04-06 International Business Machines Corporation Deep trench based far subcollector reachthrough
US8362660B2 (en) * 2009-11-09 2013-01-29 Nucleus Scientific, Inc. Electric generator
US9245892B2 (en) 2014-02-20 2016-01-26 International Business Machines Corporation Semiconductor structure having buried conductive elements

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4037306A (en) * 1975-10-02 1977-07-26 Motorola, Inc. Integrated circuit and method
US4044452A (en) * 1976-10-06 1977-08-30 International Business Machines Corporation Process for making field effect and bipolar transistors on the same semiconductor chip
US4280272A (en) * 1977-07-04 1981-07-28 Tokyo Shibaura Denki Kabushiki Kaisha Method for preparing complementary semiconductor device

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3913124A (en) * 1974-01-03 1975-10-14 Motorola Inc Integrated semiconductor transistor structure with epitaxial contact to the buried sub-collector including fabrication method therefor
US4048649A (en) * 1976-02-06 1977-09-13 Transitron Electronic Corporation Superintegrated v-groove isolated bipolar and vmos transistors
JPS5918870B2 (en) * 1977-05-15 1984-05-01 財団法人半導体研究振興会 semiconductor integrated circuit
US4140558A (en) * 1978-03-02 1979-02-20 Bell Telephone Laboratories, Incorporated Isolation of integrated circuits utilizing selective etching and diffusion
JPS54154979A (en) * 1978-05-29 1979-12-06 Matsushita Electric Ind Co Ltd Manufacture of insulated gate type semiconductor device
JPS55130176A (en) * 1979-03-30 1980-10-08 Hitachi Ltd Field effect semiconductor element and method of fabricating the same
JPS5636143A (en) * 1979-08-31 1981-04-09 Hitachi Ltd Manufacture of semiconductor device
JPS575346A (en) * 1980-06-13 1982-01-12 Oki Electric Ind Co Ltd Semiconductor device and manufacture thereof
JPS5846193B2 (en) * 1980-07-15 1983-10-14 株式会社東芝 semiconductor equipment
US4339869A (en) * 1980-09-15 1982-07-20 General Electric Company Method of making low resistance contacts in semiconductor devices by ion induced silicides
FR2498812A1 (en) * 1981-01-27 1982-07-30 Thomson Csf STRUCTURE OF TRANSISTORS IN AN INTEGRATED CIRCUIT AND METHOD OF MANUFACTURING THE SAME
US4435896A (en) * 1981-12-07 1984-03-13 Bell Telephone Laboratories, Incorporated Method for fabricating complementary field effect transistor devices

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4037306A (en) * 1975-10-02 1977-07-26 Motorola, Inc. Integrated circuit and method
US4044452A (en) * 1976-10-06 1977-08-30 International Business Machines Corporation Process for making field effect and bipolar transistors on the same semiconductor chip
US4280272A (en) * 1977-07-04 1981-07-28 Tokyo Shibaura Denki Kabushiki Kaisha Method for preparing complementary semiconductor device

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
IBM TECHNICAL DISCLOSURE BULLETIN, vol. 24, no. 9, February 1982, pages 4641-4642, New York, US; H.H. HANSEN et al.: "Self-aligned ion-implanted oxidation barrier for semiconductor devices" *
TECHNICAL DIGEST OF THE IEEE INTERNATIONAL ELECTRON DEVICES MEETING, 4th-6th December 1978, Washington, page 10, IEEE, New York, US; W. KIM et al.: "Refilled oxide groove isolation technique (ROGI) - A combind isolation and metallization process" *

Also Published As

Publication number Publication date
EP0100571A2 (en) 1984-02-15
JPS5943552A (en) 1984-03-10
US4503451A (en) 1985-03-05

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Legal Events

Date Code Title Description
PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

Free format text: ORIGINAL CODE: 0009012

AK Designated contracting states

Designated state(s): DE FR GB IT NL

PUAL Search report despatched

Free format text: ORIGINAL CODE: 0009013

AK Designated contracting states

Designated state(s): DE FR GB IT NL

17P Request for examination filed

Effective date: 19860428

17Q First examination report despatched

Effective date: 19880118

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: THE APPLICATION IS DEEMED TO BE WITHDRAWN

18D Application deemed to be withdrawn

Effective date: 19880201

RIN1 Information on inventor provided before grant (corrected)

Inventor name: LUND, CLARENCE A.

Inventor name: SUGINO, MICHAEL D.