JPS58125865A - Photo sensor - Google Patents
Photo sensorInfo
- Publication number
- JPS58125865A JPS58125865A JP57009197A JP919782A JPS58125865A JP S58125865 A JPS58125865 A JP S58125865A JP 57009197 A JP57009197 A JP 57009197A JP 919782 A JP919782 A JP 919782A JP S58125865 A JPS58125865 A JP S58125865A
- Authority
- JP
- Japan
- Prior art keywords
- photosensitive
- regions
- face
- substrate
- light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 claims abstract description 20
- 239000004065 semiconductor Substances 0.000 claims abstract description 11
- 230000003287 optical effect Effects 0.000 claims abstract description 5
- 230000005540 biological transmission Effects 0.000 claims description 4
- 229910021421 monocrystalline silicon Inorganic materials 0.000 abstract description 8
- 229910052751 metal Inorganic materials 0.000 abstract description 5
- 239000002184 metal Substances 0.000 abstract description 5
- 230000035945 sensitivity Effects 0.000 abstract description 4
- 239000011521 glass Substances 0.000 abstract description 3
- 238000000034 method Methods 0.000 abstract description 3
- 230000005855 radiation Effects 0.000 abstract 2
- 229920003023 plastic Polymers 0.000 abstract 1
- 239000004033 plastic Substances 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 17
- 206010034972 Photosensitivity reaction Diseases 0.000 description 9
- 230000036211 photosensitivity Effects 0.000 description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 239000007789 gas Substances 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- 230000002238 attenuated effect Effects 0.000 description 2
- 239000003086 colorant Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000000945 filler Substances 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 239000012495 reaction gas Substances 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 235000008375 Decussocarpus nagi Nutrition 0.000 description 1
- 244000309456 Decussocarpus nagi Species 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 241001676573 Minium Species 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- ZOCHARZZJNPSEU-UHFFFAOYSA-N diboron Chemical compound B#B ZOCHARZZJNPSEU-UHFFFAOYSA-N 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 125000005842 heteroatom Chemical group 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 239000012788 optical film Substances 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 230000001012 protector Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- IWOKCMBOJXYDEE-UHFFFAOYSA-N sulfinylmethane Chemical compound C=S=O IWOKCMBOJXYDEE-UHFFFAOYSA-N 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
- Light Receiving Elements (AREA)
- Spectrometry And Color Measurement (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
Description
【発明の詳細な説明】
本発明は複数の特定汲畏域に感光する感光装置に関する
。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a photosensitive device that is sensitive to a plurality of specific areas of interest.
光活性−に単結晶シリコンを用いた複数の特定θ長域に
感光する感光装置、所謂色センサーの存在は既に知られ
ている。その原理的な構成は、第1図に示す如く、単結
晶シリコン基板(110表面に複数の感光領域である7
fトダイオード領域(2R)(2G)(2B)を設ける
と共に、これら各領域上に透過ff畏塚の異なる光学フ
イ〜り1例えば赤色フィルタ(5R)、緑色フイMり(
5G)及び青色フイ〜り(5B〕を配し、史にその上に
赤外カットフィルタ(4)を配したもので、斯るセンす
−に於いて、各フイνり(5R) (,5G ) (3
B)(41を介して可視光が基板(11に入射すると、
入射可視光の含む色に応じて、それが赤なら赤色74V
り(3R)に対応し友7tトダイオード領域(2R)に
、緑なら緑色フィルタ(5G)に対応したフォトダイオ
ード領域(2G)に、また青なら青色フィルタ(5B)
に対応したフォトダイオード領域(2B)に夫々信号が
出力される。The existence of a photosensitive device, a so-called color sensor, which uses single crystal silicon for photoactivity and is sensitive to a plurality of specific θ long ranges, is already known. Its basic structure is, as shown in FIG.
F diode regions (2R), (2G), and (2B) are provided, and on each of these regions, an optical film having a different transmission power is provided, such as a red filter (5R), a green filter (M), etc.
5G) and a blue filler (5B), and an infrared cut filter (4) is placed above it, and in such a sensor, each filler (5R) (, 5G ) (3
B) When visible light enters the substrate (11 through 41,
Depending on the color of the incident visible light, if it is red then red 74V
If it is green, it will be placed in the photodiode area (2G) corresponding to the green filter (5G), and if it is blue, it will be placed in the blue filter (5B).
Signals are output to the photodiode areas (2B) corresponding to the respective areas.
単結晶シリコン自体の感光度特性は@2図の曲jlAに
示す如く、赤外領域にピークを呈する。一方、赤色フイ
Vり(3R)は赤色帯域で透過度のピークを示すものの
、その帯壊特性の拡がりσ減衰しながらも赤色1域に1
ですそ野を引いて−る。The photosensitivity characteristic of single crystal silicon itself exhibits a peak in the infrared region, as shown by curve jlA in Figure @2. On the other hand, although the red color filter (3R) shows a transmittance peak in the red band, the spread of the band breakage characteristic is σ attenuated.
I'm pulling the field.
従って、光活性層に単結晶シリコンを用いた場合、赤色
フイ〃り(5R)を通すだけではフォトダイオード領域
(2R)は、減衰しながらも共に入射する赤外光に、単
結晶シリコン目体の感光度特性に応じて強く感応してし
!い、正Sな色情報を検出できない。lIT紀従来の色
センサーに於ける赤外カッ)フィルタ(4)は、この様
な入射赤外光を除去する几めに設けられてお抄、不司欠
な存在である。Therefore, when monocrystalline silicon is used for the photoactive layer, if the photodiode region (2R) only passes through the red ray (5R), the infrared light that enters the photodiode region (2R) will be attenuated, but the monocrystalline silicon eye body will not be able to absorb the incident infrared light. It is strongly sensitive to the photosensitivity characteristics of! Therefore, correct S color information cannot be detected. The infrared filter (4) in the conventional color sensor of the IT era is indispensable because it is provided to remove such incident infrared light.
然し乍ら、断る赤外カラトフィルタ(4)の存在はセン
サーの構成を複雑にするだけでなく、製造に際して、そ
のフイ〃り(41並びに各色フィルタ(5R) (5G
) (5B )を単結晶シリコン基板(1)上に重畳
被着する工程で、脆弱なシリコン基板(11を破損しや
すい、といった欠点をもたらす。However, the presence of the infrared color filter (4) not only complicates the configuration of the sensor, but also makes it difficult to manufacture the filter (41 and each color filter (5R) (5G).
) (5B) on the single-crystal silicon substrate (1) has the disadvantage that the silicon substrate (11) is easily damaged.
本発明は斯る点に鍾みて為され友ものであって、以下に
本発明の賽施例につき畦述する。The present invention has been made in consideration of these points, and embodiments of the present invention will be described in detail below.
第5図(AJ但)は本発明の一英施例である色センサー
の光照射備から艶た正面図並びにB −4線断面図であ
る。同図に於いて、aOはガラス・耐熱プフスチツク尋
の透光T!P基板、(11R)(11G)(11B)は
前記透光性基板αOの一方の主面に設けられた複数例え
ば5個の感光領域で、該感光領域(11R)(11G)
(11B)は前記透光性基板(1111から透光性電極
(12R)(12G)(12B)、アモ/L/7アス半
導体から収る光活性層(13R)(13())(13B
)、2eび&l11ffM(14RJ(14Gl(14
B)を積層した構造を持つ。前記光活性1m(13R)
(15G)(15B)を構成するア七〜ファス半導体と
しては。FIG. 5 (AJ) is a glossy front view and a sectional view taken along the line B-4 of a color sensor according to an embodiment of the present invention. In the same figure, aO is transparent T! The P substrate (11R) (11G) (11B) is a plurality of, for example, five photosensitive areas provided on one main surface of the transparent substrate αO, and the photosensitive areas (11R) (11G)
(11B) is a photoactive layer (13R) (13()) (13B) which includes the transparent substrate (1111), the transparent electrode (12R) (12G) (12B), and the amo/L/7As semiconductor.
), 2e&l11ffM(14RJ(14Gl(14
B) has a laminated structure. The photoactivity 1m (13R)
(15G) (15B) as the A7~Fas semiconductors.
グロー放1r等のガス反応を用いて任意の基板上Ksf
illtLルアモル7アスシリコン(a−81)−アー
ts/ファスシリコンカーバイド(a−8iC)eア4
1vフ1スシリコンゲMマニウム(a−81Ge)・ア
モルファスシリコンナイトワイド(a−8iN )−r
qtvy、スpr):xンxX(a−81sn)及びそ
れらを微結ル化したもの等欅々のものが知られており、
艷にこれらの物質中に水素やハロゲン元素、あるいはド
ーパントとして砒素(A8)・憐0@ボロン0・アA/
ミニウム(Al)を含むものが適用される。斯るa−8
1系から成る光活性層(13R)(13G)(15B)
の感光度特性に第2m0)に示す如く可視光域に感度ピ
ークを有すると共に、感光帯域も大概ねili]視光域
内に存在する。この感光度特性はP工N接合型a−8j
4)ffi活性N(13R)(13G)(13B)(7
)ものであり、従来の如く単結晶シリコンの感度ピーク
が赤外領域に存在することに起因して使用される赤外力
フトフィMり(41を用いるまでもなく、赤外領域に対
し感光しない極めて1要な特性を具備している。Ksf on any substrate using a gas reaction such as glow emission 1r
illtLruamoru7asilicon(a-81)-arts/fasiliconcarbide(a-8iC)ea4
1v silicon GeM manium (a-81Ge)/amorphous silicon night wide (a-8iN)-r
qtvy, spr): xn x
These substances contain hydrogen and halogen elements, or arsenic (A8), boron 0, and arsenic as dopants.
A material containing aluminum (Al) is applied. Such a-8
Photoactive layer consisting of 1 system (13R) (13G) (15B)
As shown in the second m0) of the photosensitivity characteristics, it has a sensitivity peak in the visible light range, and the photosensitive band is also generally within the visible light range. This photosensitivity characteristic is P-N junction type a-8j
4) ffi activity N(13R)(13G)(13B)(7
), and since the sensitivity peak of single crystal silicon exists in the infrared region as in the past, there is no need to use infrared power (41), which is extremely insensitive to the infrared region. 1. It has the necessary characteristics.
(15R) (15G ) (15B )は前記透光性
基板aOの他方の主面に於いて前記5gAの発光領域(
11R)(11G)(11B)の夫々に対向すべ(配置
ゼしめられ危赤色・緑色・青色フィルタで、これ等の各
色yイwl(15R)(15G)(15B)け赤・緑・
青の各色の特定8畳域の可視光を透過ぜしめるもので着
色ガラス或いは着ρwest脂等によシ構成され、前記
各色フイVり(15R)(15G)(15B)は一体化
されたものであっても良い。(15R) (15G) (15B) is the 5 gA light emitting region (
11R) (11G) (11B).
It transmits visible light in a specific 8 tatami area of each color of blue and is made of colored glass or colored wax, and the above-mentioned color rims (15R) (15G) (15B) are integrated. It may be.
而して、前記光活性層(13R)(13G)(15B)
が、PN接合・P工NW!会・P工接会・IN!I会・
V1ットキー接合・ヘテロフェイス接合・絶IIk1w
を介したM工S接合等の接合型のものにあっては、赤色
・緑色・青色の各色y4pvり(15R)(15G)(
15B)で選択された特定#畏植の光照射によ抄目由伏
融の電子及び又はホールを生ぜしめ、それらが夫々の透
光性11&t12R)(12G)(12B)及び金属電
ff1(14R)(14G)(14B)K到達して両電
極(12R)(14R)・(12G)(14())・(
12B)(14B)間に光起電力を発生する。一方、光
活性層(13R)(13G)(13B)が上述の如き接
合を育しないものにあっては目出伏藝の電子及び又はホ
ー〃の発生により導電率が上昇する光導電現象を招くに
の様にして各感光領wt(11R)(11G)(11B
)は特定叡長埴の照射光に感光し、その照射光の強度に
対応したレベルの信号を出力する。即ち、前記各感光領
域(11R)(11G)(11B)の出力信号のレベV
から入射光のH畏成分比を知ることができ、木賽施例の
如く光の5原色である赤色・緑色・青色の色フィルタ(
15R)(15G)(15B)を用いることによって全
ての色情報を得ることができる。Thus, the photoactive layer (13R) (13G) (15B)
However, PN junction/P engineering NW! Association/P-Works Association/IN! I-kai・
V1 key junction, hetero face junction, absolute IIk1w
For joining types such as M/S joining via
By irradiating the light of the specific number selected in 15B), electrons and/or holes are generated, which cause the respective translucent properties 11 & t12R) (12G) (12B) and metal electric ff1 (14R )(14G)(14B)K reaches both electrodes (12R)(14R)・(12G)(14())・(
A photovoltaic force is generated between 12B) and 14B. On the other hand, if the photoactive layer (13R) (13G) (13B) does not develop bonding as described above, it will cause a photoconductive phenomenon in which the conductivity increases due to the generation of electrons and/or HO. Each photosensitive area wt (11R) (11G) (11B
) is exposed to the irradiation light of a specific Einagawa and outputs a signal at a level corresponding to the intensity of the irradiation light. That is, the level V of the output signal of each photosensitive area (11R) (11G) (11B)
You can know the H component ratio of the incident light from
15R) (15G) (15B), all color information can be obtained.
次いで本発明の具体的実施例をそのIl造方法と共に説
明する。Next, specific embodiments of the present invention will be described together with a method for manufacturing the same.
先ず、I!1光性電極(12R)(12G)(12B)
としてインジウム錫酸化物(工To)がスパッタによh
a着されバターニングされたガラスから成る厚み0.5
Hの透光性基板αOをプラズマ屓応炉の反応電極間に配
置し、前記透光性基板αOを約500Cに加勢した状馳
でシフン(SiH4)ガスと不純物ガスとしてジボラン
(B2H6)を100022m4人する。そして上記反
応電極に13.56MHz100Wの高周波電力を付与
してグロー放電を生起ぜしめ前記透光性基板αO上に全
面にわたって厚み約10OAのP型の1七M7アスシリ
:xン(a Si:H)を得ル、そ0IIB ! H
6ガスのみを除去して厚み約500OAの1型a−s1
uHを析出ぜしめ、史に7tスフイン(PHA)を不純
物ガスとしてIQQQPPm混入し500A程iON型
a−8i+Ht−形成し1層光性基板α0*からP工N
各−を1畳したPIN接合t lr スルyセル7アス
シリコン(a−8i:H)から成る1枚の光活性111
03の製造を終了する。尚上記a−8i;Hの成長速度
は各層とも約1μm//hrであるので、Fg−r望の
厚みを得るべく時間制御する。First, I! 1 Photosensitive electrode (12R) (12G) (12B)
Indium tin oxide (To) is sputtered as
Made of a-glued and buttered glass with a thickness of 0.5
A H translucent substrate αO was placed between the reaction electrodes of a plasma reactor, and while the translucent substrate αO was heated to about 500C, 100022 m4 of Sifun (SiH4) gas and diborane (B2H6) as an impurity gas were added. people Then, a high frequency power of 13.56 MHz 100 W is applied to the reaction electrode to generate a glow discharge, and a P-type 17M7 assilicate (a Si:H ) is obtained, so0IIB! H
1 type a-s1 with a thickness of about 500OA by removing only 6 gases
Precipitate uH, mix IQQQPPm with 7t sulfine (PHA) as an impurity gas, form an iON type a-8i+Ht- of about 500A, and form a single-layer photosensitive substrate α0* to P-N.
One photoactive 111 made of PIN junction tlr through cell 7as silicon (a-8i:H) with each - 1 tatami
Production of 03 is completed. Incidentally, since the growth rate of the above a-8i;H is about 1 μm//hr for each layer, the time is controlled to obtain the desired thickness of Fg-r.
そして、上記a−3i:Hの光活性層0を予め定められ
たパターンに71トエッチング若しくはプラズマエツチ
ング等の手段によって分割する。Then, the a-3i:H photoactive layer 0 is divided into a predetermined pattern by means such as 71-tetching or plasma etching.
この分割によって近接する光活性層(13R)(15G
) (13B )同士はii賽に絶縁された状1とな
る。また、上記エフチング手段を便用ぜず、アモVフT
スVリコン形成時に金属マスクを用いて初めから選択的
に分離した光活性@(15R)(13G)(15B)を
形成しても艮φ。Due to this division, adjacent photoactive layers (13R) (15G
) (13B) are in a state 1 in which they are insulated from each other. In addition, without using the above-mentioned efting means, it is also possible to
Even if selectively separated photoactive @ (15R) (13G) (15B) is formed from the beginning using a metal mask during the formation of the V silicon, no problem occurs.
その後、上記光活性層(15R)(15G)(15B]
上にア/I/ミニウムの金属電極α4を蒸着し不要部を
除去して3個の感光領域(11R)(11G)(11B
)を前記透光性基板(2)の一方の主面に完成する。After that, the photoactive layer (15R) (15G) (15B)
A/I/minium metal electrode α4 is deposited on top and unnecessary parts are removed to form three photosensitive areas (11R) (11G) (11B).
) is completed on one main surface of the transparent substrate (2).
上述の如く感光領域(11R)(11G)(11B)を
形成後、赤色・緑色嘩青色の各フイ〃り(15R)(1
5G)(15B)を透光性基板(2)の他方の主面に於
いて前記各感光領域(11R)(11G)(11B)の
央々と術部するように被着する。断る赤色・緑色・青色
の各フイにり(11R)(11G)(11B)は例えば
イーストマン・コダック社製の商品名WRATTKN
Gl!LA−T工NIF工I、TER翫25(赤色)
・凪58(緑色〕・447B(青色)であって、第4図
のIraき′!M過特性を持っている。このコダック社
製の色フィルタ(15’R)(15Cr )(15[
3)はフイシム状であ抄所望パターンに形成後透明な樹
脂系の接着剤で接着り泊。After forming the photosensitive areas (11R) (11G) (11B) as described above, each red, green, and blue fill (15R) (1
5G) (15B) on the other main surface of the transparent substrate (2) so as to contact the center of each of the photosensitive areas (11R), (11G), and (11B) and the surgical site. For example, the red, green, and blue fins (11R, 11G, and 11B) are manufactured by Eastman Kodak under the trade name WRATTKN.
Gl! LA-T engineering NIF engineering I, TER gun 25 (red)
・Nagi 58 (green) ・447B (blue), which have the Ira ki'!
3) After forming the paper into the desired pattern, it is glued with a transparent resin adhesive.
また接合を有しない光導電型のものにあっては。Also, in the case of a photoconductive type that does not have a junction.
SiH4のみのグロー放電により1〜10ミクロ □
ン例えば5ミクロン程度のノンドープ層(工型層)を用
いる。電極配置としては上述の光起電力型のものと同じ
光活性層(11R)(11G)(11B)を透光性電極
(12R)(12G)(12B)と金属音&(IAR)
(14G)(14B)とで挾持するものの外に、第5図
に示す4口<透光性基板(至)に[II!光活性層(1
1R)(11G)(11B)を被着し、その露出したー
主面にのみ一対の金1lIW極Q4 a6を所定間隔喝
関して配置ぜしめたものが存在する。断る構造によると
、透光性電m(12R)(12G)(12B)が省略で
きるのは元よ抄、該透光性電極の存在による透過光の僅
かな減衰を[i11避することもできる。1 to 10 microns by glow discharge of SiH4 only □
For example, a non-doped layer (molding layer) of about 5 microns is used. As for the electrode arrangement, the photoactive layers (11R) (11G) (11B) are the same as those of the photovoltaic type described above, and the transparent electrodes (12R) (12G) (12B) and metallic sound & (IAR) are used.
(14G) In addition to what is held between (14B) and the four openings shown in FIG. Photoactive layer (1
1R) (11G) (11B) and a pair of gold 11IW poles Q4 a6 are arranged at a predetermined distance only on the exposed main surface thereof. According to this structure, the light-transmitting electrodes m (12R) (12G) (12B) can be omitted, and the slight attenuation of transmitted light due to the presence of the light-transmitting electrodes can also be avoided. .
vg6図(A3B(0)は本発明感光装置の他の実施例
であって、囚に於いては感光領域011が3個、 (B
lに於iては4個、1)K於いては6個夫々中心対称に
集中的配置せしめられ、夫々の感光領域qト・には透過
設畏域の異なる光学フイ〃り(至)・・・が対向するべ
く設けられているが、先の実施例の如く赤色・緑色・青
色の光の3原色をp@−れば全てのITJ!I光域をカ
バーすることができるので、相対感度の低−a畏域の色
74yl側・・・を重複して使用すれば低fE度を補償
することもできる。また感光領域(in −・が6@存
在するものにつすては赤色・緑色・青色の31m[色と
補色の関係にあるシアン色・マゼンタ色・黄色の色フイ
yり(至)・・・を追加しても艮い。Figure vg6 (A3B(0)) is another embodiment of the photosensitive device of the present invention, in which there are three photosensitive areas 011 in the prisoner, (B
4 in 1) and 6 in 1) K are centrally arranged centrally symmetrically, and each photosensitive area q has an optical filter with a different transmission area. ... are provided to face each other, but as in the previous embodiment, if the three primary colors of red, green, and blue light are p@-, all ITJ! Since it can cover the I light range, it is also possible to compensate for the low fE degree by redundantly using the color 74yl side of the low-a range of relative sensitivity. In addition, the photosensitive area (in -. is 6@) is 31 m of red, green, and blue [colors of cyan, magenta, and yellow, which have a complementary color relationship with the color (up to)...・It doesn't matter if you add it.
l!に図示はしな−か、多数の感光領域を一直纏上に配
列した構成が特に力?−ファクシミリ用の感光量減を1
ユニツトとしたものが−1繰上に配列される。l! Although it is not shown in the figure, the configuration in which many photosensitive areas are arranged in a straight line is particularly powerful. - Reduced exposure level for facsimile by 1
Units are arranged in increments of -1.
尚1以上の説明に於けるア七〃ファス半導体は反応ガス
の組成並びに組成比を1宜選択することによって感光度
特性の異なるものが容IIJK得られることが知られて
−る。例えば反応ガスとして5IH4にメタン(OHn
)を加え1モルファスVリコンカーバイドを形成すれば
、短fi長側での感光度が上昇し、ゲyマン(()θH
4)を添加するeとに!つテf −e A/ 7アスシ
リコンゲVマニウムを得て畏波長側での感光度を増大せ
しめることもできる。It is known that the aphasic semiconductors mentioned in the above description can be made to have different photosensitivity characteristics by appropriately selecting the composition and composition ratio of the reaction gas. For example, methane (OHn) is added to 5IH4 as a reaction gas.
) to form a 1-morphous V recon carbide, the photosensitivity on the short fi long side increases and Geyman (()θH
4) Add e and! It is also possible to increase the photosensitivity on the wavelength side by obtaining 7 assilicon germanium.
!友、透光性[ff1(12Fi)(12GJ(12B
)並びに金属電1ii(14R)(14G)(14B)
は、各感光領域(11R)(11G)(11B3に対し
夫々分割せしめられていたが、何れか一方の電極を
” 全領域に渡って一様に形成し
ても良い。特に透光性電極(12R)(12G)(12
B)を全領域に渡って一様に形成すれば1次に1畳され
るアモ〃ファス半導体も平担化されるので有用である。! Friend, translucency [ff1 (12Fi) (12GJ (12B)
) and Metal Electric 1ii (14R) (14G) (14B)
was divided into each photosensitive area (11R) (11G) (11B3), but if one of the electrodes was
” It may be formed uniformly over the entire area. In particular, the transparent electrode (12R) (12G) (12
If B) is formed uniformly over the entire area, it is useful because even an amorphous semiconductor which is made into a primary layer can be flattened.
本発明感光1置は以上の説明から明らかな如く。As is clear from the above description, the photosensitive method of the present invention is one-shot.
透光性基板を挾んで感光波長域の異なる複数の感光量m
は、感光度特性が大概ねり視光領域に存在する1モ/I
/7アス半導体を主構成要素とする光活性層を含んでい
るので、従来の赤外領域KW度ピークを有している維結
蛤晶シリコンに於いて不可欠であった赤外カットフィル
タを省略することができると共に、前記透光性基板が脆
弱な光活性層に愚影響を与えることなく感光波長域を規
制する光学フィルタを配置せしめる際の保護体並びに文
持体として作用し装置の歩留りの低下を防止する仁とが
できる。Multiple photosensitive amounts m with different photosensitive wavelength ranges are sandwiched between transparent substrates.
is 1 mo/I whose photosensitivity characteristics are mostly in the visible light region.
Since it includes a photoactive layer whose main component is a /7A semiconductor, the infrared cut filter that is essential in conventional fiber crystal silicon, which has a KW degree peak in the infrared region, is omitted. In addition, the light-transmitting substrate acts as a protector and carrier when arranging an optical filter that regulates the photosensitive wavelength range without adversely affecting the fragile photoactive layer, thereby improving the yield of the device. It can be used to prevent deterioration.
第1図は従来装置の断面図、第2図は従来装置e)拳結
晶シリコンと本発明装置のγそりフ1ス半導体の感光度
特性図、第5図CAId本発明装置の光照射備からU九
正面図、内因但)は(2)に於けるB −B’ill+
面図、第4図は本発明装置に用いられる光学フイyりの
透過特性図、第5図は本発明装置の他の実施例断面図、
第6図囚〜(0)は本発明の茫に他の!!施911M面
図、を夫々示している・(1111−−−−−jlff
i性JHi、 (1m)(11R) (11G ) (
11B )−−・−感光11tfi3(15R)(15
G)(15B)−−−−感光活性層、Qfi(15R)
(15G)(15B)・・・・・・光学フイVり。
第1図
第2図
5L&(九m)Fig. 1 is a sectional view of the conventional device, Fig. 2 is a conventional device e) Photosensitivity characteristic diagram of fist crystal silicon and gamma shaving semiconductor of the device of the present invention, Fig. 5 CAId from the light irradiation equipment of the device of the present invention U9 front view, internal cause) is B −B'ill+ in (2)
4 is a transmission characteristic diagram of the optical fiber used in the device of the present invention, and FIG. 5 is a sectional view of another embodiment of the device of the present invention.
Figure 6 - (0) is different from the present invention! ! (1111-----jlff
i sex JHi, (1m) (11R) (11G) (
11B) --- Photosensitive 11tfi3 (15R) (15
G) (15B) --- Photosensitive active layer, Qfi (15R)
(15G) (15B)...Optical filter. Figure 1 Figure 2 5L & (9m)
Claims (1)
けると共に、前記透光性基板の他方の面に透過θ長域の
異なるWl!の光学フィルタを前記感光領域の夫々に対
向すべ(配置ぜしめた感光装置に於いて、前記感光領域
はア七Mファス半導体を主構成要素とする光活性層を含
んでいることを特徴とした感光装置。 (21前記ア七Mファス半導体を主構成要素とする感光
領域は特定θ長域の光照射により光起電力を発生するこ
とを特徴とする特許−求の範囲第1項記載の感光装置。 (3)前記ア七I%/7アス半導体を主構成要素とする
感光領域は特定θ長域の光照射によaSS率が上昇する
ことを特徴とする特許請求の範囲第1項記載の感光V7
!置。[Scope of Claims] (1) A number of II photosensitive regions are provided on one main surface of the M-photosensitive substrate, and Wl! with different transmission θ length regions are provided on the other surface of the light-transmitting substrate. A photosensitive device is provided in which an optical filter is arranged facing each of the photosensitive regions, wherein the photosensitive regions include a photoactive layer whose main component is an A7M fass semiconductor. Photosensitive device. (21) The photosensitive device according to item 1 of the patent, characterized in that the photosensitive region whose main component is the A7 Mfas semiconductor generates a photovoltaic force when irradiated with light in a specific θ range. Apparatus. (3) The aSS rate of the photosensitive region mainly composed of the A7I%/7A semiconductor increases when irradiated with light in a specific θ long range. photosensitive V7
! Place.
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57009197A JPS58125865A (en) | 1982-01-22 | 1982-01-22 | Photo sensor |
GB08300968A GB2115980B (en) | 1982-01-22 | 1983-01-14 | Color sensor |
FR8300882A FR2520557B1 (en) | 1982-01-22 | 1983-01-20 | CHROMATIC SENSOR |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57009197A JPS58125865A (en) | 1982-01-22 | 1982-01-22 | Photo sensor |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS58125865A true JPS58125865A (en) | 1983-07-27 |
JPH0477470B2 JPH0477470B2 (en) | 1992-12-08 |
Family
ID=11713776
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP57009197A Granted JPS58125865A (en) | 1982-01-22 | 1982-01-22 | Photo sensor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS58125865A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01223353A (en) * | 1988-01-08 | 1989-09-06 | Boehringer Mannheim Gmbh | Apparatus for cleaning internal surface of reaction container and/or external surface of roughly spherical reagent body |
JPH03268369A (en) * | 1990-03-16 | 1991-11-29 | Sharp Corp | Color sensor |
EP1523046A1 (en) * | 2003-10-06 | 2005-04-13 | Delphi Technologies, Inc. | Integrated optical filter |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4846280A (en) * | 1971-10-05 | 1973-07-02 | ||
JPS562784A (en) * | 1979-06-22 | 1981-01-13 | Nippon Telegr & Teleph Corp <Ntt> | Image pickup device |
JPS564286A (en) * | 1979-06-25 | 1981-01-17 | Canon Inc | Photoelectric converter |
JPS56103573A (en) * | 1980-01-22 | 1981-08-18 | Canon Inc | Color reading device |
JPS56135980A (en) * | 1980-03-28 | 1981-10-23 | Canon Inc | Photoelectric conversion element |
JPS56138362A (en) * | 1980-03-31 | 1981-10-28 | Canon Inc | Photoelectric converter |
-
1982
- 1982-01-22 JP JP57009197A patent/JPS58125865A/en active Granted
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4846280A (en) * | 1971-10-05 | 1973-07-02 | ||
JPS562784A (en) * | 1979-06-22 | 1981-01-13 | Nippon Telegr & Teleph Corp <Ntt> | Image pickup device |
JPS564286A (en) * | 1979-06-25 | 1981-01-17 | Canon Inc | Photoelectric converter |
JPS56103573A (en) * | 1980-01-22 | 1981-08-18 | Canon Inc | Color reading device |
JPS56135980A (en) * | 1980-03-28 | 1981-10-23 | Canon Inc | Photoelectric conversion element |
JPS56138362A (en) * | 1980-03-31 | 1981-10-28 | Canon Inc | Photoelectric converter |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01223353A (en) * | 1988-01-08 | 1989-09-06 | Boehringer Mannheim Gmbh | Apparatus for cleaning internal surface of reaction container and/or external surface of roughly spherical reagent body |
JPH03268369A (en) * | 1990-03-16 | 1991-11-29 | Sharp Corp | Color sensor |
EP1523046A1 (en) * | 2003-10-06 | 2005-04-13 | Delphi Technologies, Inc. | Integrated optical filter |
Also Published As
Publication number | Publication date |
---|---|
JPH0477470B2 (en) | 1992-12-08 |
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