JPS6310591B2 - - Google Patents
Info
- Publication number
- JPS6310591B2 JPS6310591B2 JP57216990A JP21699082A JPS6310591B2 JP S6310591 B2 JPS6310591 B2 JP S6310591B2 JP 57216990 A JP57216990 A JP 57216990A JP 21699082 A JP21699082 A JP 21699082A JP S6310591 B2 JPS6310591 B2 JP S6310591B2
- Authority
- JP
- Japan
- Prior art keywords
- type
- amorphous layer
- type amorphous
- solar cell
- silicon solar
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 20
- 238000000034 method Methods 0.000 claims description 12
- 238000004519 manufacturing process Methods 0.000 claims description 8
- 239000012535 impurity Substances 0.000 description 22
- 239000010408 film Substances 0.000 description 13
- 238000006243 chemical reaction Methods 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PIN type, e.g. amorphous silicon PIN solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Description
【発明の詳細な説明】
この発明はアモルフアスシリコン半導体を主材
料として用いたpin接合構造のアモルフアスシリ
コン太陽電池の製造方法に係り、特にｉ形アモル
フアス層の成長工程に関するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method of manufacturing an amorphous silicon solar cell having a pin junction structure using an amorphous silicon semiconductor as a main material, and particularly relates to a growth process of an i-type amorphous layer.
第１図は従来のpin接合構造のアモルフアスシ
リコン太陽電池の断面図を示すものであり、図に
おいて１は基板、２はこの基板の表面上に周知の
グロー放電法によつて蒸着され、ｐ形不純物であ
るボロンがドープされたｐ形アモルフアス層で、
厚さ約100Åである。３はこのｐ形アモルフアス
層の表面上に同様にグロー放電法によつて蒸着さ
れたアンドープのｉ形アモルフアス層で、厚さ数
千Å、例えば約5000Åである。４はこのｉ形アモ
ルフアス層の表面上に蒸着され、ｎ形不純物であ
るリンがドープされたｎ形アモルフアス層で、厚
さ約100Åである。５はこのｎ形アモルフアス層
の表面上に形成された例えばITO（In、O3とSnO2
との混合物）薄膜からなる反射防止膜、６はこの
反射防止膜の表面上に選択的に形成された金属か
らなる集電電極である。 Figure 1 shows a cross-sectional view of a conventional amorphous silicon solar cell with a pin junction structure. In the figure, 1 is a substrate, and 2 is a p A p-type amorphous layer doped with boron, which is a type impurity,
The thickness is approximately 100 Å. Reference numeral 3 denotes an undoped i-type amorphous layer deposited on the surface of this p-type amorphous layer by the glow discharge method, and has a thickness of several thousand Å, for example, about 5000 Å. Reference numeral 4 denotes an n-type amorphous layer doped with phosphorus as an n-type impurity, which is deposited on the surface of this i-type amorphous layer, and has a thickness of about 100 Å. 5, for example, ITO (In, O 3 and SnO 2 ) formed on the surface of this n-type amorphous layer.
6 is a current collecting electrode made of metal selectively formed on the surface of this anti-reflection film.
この様に構成されたアモルフアスシリコン太陽
電池にあつて特にｉ形アモルフアス層の成長工程
においては、従来、高い一定のRFパワーによつ
て成長させていた。この様に高い一定のRFパワ
ーによつてｉ形アモルフアス層を成長させた場
合、ｐ形アモルフアス層２からｐ形不純物（この
従来例においてはボロン）がたたき出されてｉ形
アモルフアス層３に混入し、その結果、アモルフ
アスシリコン太陽電池の特性、特に変換効率が低
くなつてしまうという欠点があつた。 In an amorphous silicon solar cell constructed in this manner, especially in the growth process of the i-type amorphous layer, growth has conventionally been performed using a high constant RF power. When the i-type amorphous layer is grown with such a high constant RF power, p-type impurities (boron in this conventional example) are knocked out from the p-type amorphous layer 2 and mixed into the i-type amorphous layer 3. However, as a result, the characteristics of the amorphous silicon solar cell, especially the conversion efficiency, deteriorated.
ところで、ｉ形アモルフアス層３のｐ形不純物
の混入量を減らす一つの方法として、非常に低い
RFパワーによつてｉ形アモルフアス層３をｐ形
アモルフアス層２上に成長させる方法が考えられ
る。この方法によれば、ｉ形アモルフアス層３の
ｐ形不純物混入量は減少させることができる反
面、ｉ形アモルフアス層３自体の膜質が低下する
現象が現われ、結果としてアモルフアスシリコン
太陽電池の特性は良くならなかつた。 By the way, one way to reduce the amount of p-type impurities mixed into the i-type amorphous layer 3 is to reduce the amount of p-type impurities to a very low level.
A possible method is to grow the i-type amorphous layer 3 on the p-type amorphous layer 2 using RF power. According to this method, although the amount of p-type impurities mixed into the i-type amorphous layer 3 can be reduced, the film quality of the i-type amorphous layer 3 itself deteriorates, and as a result, the characteristics of the amorphous silicon solar cell deteriorate. It didn't get better.
すなわち、アモルフアスシリコン太陽電池の特
性は、ｉ形アモルフアス層のｐ形不純物の混入量
及び膜質に影響されるものである。そして、ｉ形
アモルフアス層３のｐ形不純物分布には最適プロ
フアイルがあるが、一般にｉ形アモルフアス層３
中のｐ形不純物濃度は少ないものが良好であり、
一方ｉ形アモルフアス層３の膜質も最適成長条件
があり、SiH4分解効率及びｐ形不純物の再分布
に影響するRFパワーと電極大きさとの兼ね合い
になるが、一般に小さいもの程良好であることが
知られている。しかしながら、この低RFパワー
条件よりも更にRFパワーの低い極低RFパワーで
は急激にそのｉ形アモルフアス層３の膜質は低下
するが、その反面極低RFパワーの条件下におい
ては、上記でも述べたようにｉ形アモルフアス層
のｐ形不純物の再分布は抑制できるという利点が
ある。 That is, the characteristics of an amorphous silicon solar cell are influenced by the amount of p-type impurity mixed in the i-type amorphous layer and the film quality. Although there is an optimum profile for the p-type impurity distribution in the i-type amorphous layer 3, generally the i-type amorphous layer 3
The lower the concentration of p-type impurities in the material, the better.
On the other hand, there are optimal growth conditions for the film quality of the i-type amorphous layer 3, and it is a balance between RF power and electrode size, which affect SiH 4 decomposition efficiency and redistribution of p-type impurities, but in general, the smaller the size, the better. Are known. However, at extremely low RF power, which is even lower than this low RF power condition, the film quality of the i-type amorphous layer 3 deteriorates rapidly, but on the other hand, under extremely low RF power conditions, as mentioned above, This has the advantage that redistribution of p-type impurities in the i-type amorphous layer can be suppressed.
この発明は上記した点に鑑みてなされたもので
あり、pin接合構造のアモルフアスシリコン太陽
電池の製造方法において、低いRFパワーにて薄
い第１のｉ形アモルフアス層を形成し、これに続
いて、高いRFパワーにて厚い第２のｉ形アモル
フアス層を形成するようすることにより、ｉ形ア
モルフアス層全体としては不純物の混入を抑制す
るとともに膜質向上を図り、太陽電池としての特
性向上、特に変換効率の向上を図ることができる
アモルフアスシリコン太陽電池の製造方法を提供
することを目的とする。 This invention has been made in view of the above points, and is a method for manufacturing an amorphous silicon solar cell with a pin junction structure, in which a thin first i-type amorphous layer is formed using low RF power, and then By forming a thick second i-type amorphous layer with high RF power, the i-type amorphous layer as a whole suppresses the incorporation of impurities and improves the film quality, improving the characteristics as a solar cell, especially the conversion An object of the present invention is to provide a method for manufacturing an amorphous silicon solar cell that can improve efficiency.
以下にこの発明の一実施例を第２図に基づいて
説明する。第２図はこの発明の製造方法により製
造されたpin接合構造のアモルフアスシリコン太
陽電池の断面図であり、第２図において第１図の
ものと同一符号は同一又は相当部分を示し、３は
低いRFパワーのグロー放電（例えば15W）によ
り成長された第１のｉ形アモルフアス層７と、高
いRFパワーのグロー放電（例えば40W）により
成長された第２のｉ形アモルフアス層８からなる
ｉ形アモルフアス層で、第１のｉ形アモルフアス
層７の厚さは数百Å、例えば約500Åであり、第
２のｉ形アモルフアス層８の厚さは数千Å、例え
ば約5000Åである。 An embodiment of the present invention will be described below based on FIG. 2. FIG. 2 is a cross-sectional view of an amorphous silicon solar cell with a pin junction structure manufactured by the manufacturing method of the present invention. In FIG. 2, the same reference numerals as those in FIG. The i-type is composed of a first i-type amorphous layer 7 grown by a low RF power glow discharge (for example, 15 W) and a second i-type amorphous layer 8 grown by a high RF power glow discharge (for example, 40 W). Among the amorphous layers, the thickness of the first i-type amorphous layer 7 is several hundred Å, for example about 500 Å, and the thickness of the second i-type amorphous layer 8 is several thousand Å, for example about 5000 Å.
この様に構成されたアモルフアスシリコン太陽
電池の製造は、まず基板１の表面上に従来と同様
にグロー放電法によつてｐ形不純物であるボロン
がドープされたｐ形アモルフアス層２を蒸着し、
その後、このｐ形アモルフアス層２の表面上に低
いRFパワーのグロー放電（例えば15W）により
約500Åの膜厚になるまでアンドープの第１のｉ
形アモルフアス層７を成長させ、引き続いて高い
RFパワーのグロー放電（例えば40W）により第
２のｉ形アモルフアス層８を約5000Åの膜厚にな
るまで成長させてｉ形アモルフアス層３を形成す
る。次いで、このｉ形アモルフアス層３の表面上
に、従来と同様の方法により、ｎ形不純物である
リンがドープされたｎ形アモルフアス層４、ITO
薄膜からなる反射防止膜５、および集電電極６を
順次積層形成するものである。 To manufacture an amorphous silicon solar cell constructed in this manner, first, a p-type amorphous layer 2 doped with boron, which is a p-type impurity, is deposited on the surface of a substrate 1 by a glow discharge method in the same manner as in the past. ,
Thereafter, the undoped first i is applied to the surface of this p-type amorphous layer 2 by glow discharge with low RF power (for example, 15 W) until the film thickness is about 500 Å.
Amorphous amorphous layer 7 is grown, followed by a high
The i-type amorphous layer 3 is formed by growing the second i-type amorphous layer 8 to a thickness of about 5000 Å by glow discharge of RF power (for example, 40 W). Next, on the surface of this i-type amorphous layer 3, an n-type amorphous layer 4 doped with phosphorus as an n-type impurity, ITO
An antireflection film 5 made of a thin film and a current collecting electrode 6 are sequentially laminated.
この様に本実施例では、薄い第１のｉ形アモル
フアス層７を低いRFパワーによつて生成するた
め、ｐ形アモルフアス層２からのｐ形不純物のた
たき出しを抑制でき、つまりｐ形不純物の第１の
ｉ形アモルフアス層７への混入を抑制でき、しか
も第２のｉ形アモルフアス層８は高いRFパワー
によつて生成するため膜質の劣化は生じない。さ
らに第１のｉ形アモルフアス層７の存在により、
ｐ形アモルフアス層２から第２のｉ形アモルフア
ス層８へのｐ形不純物の混入を防ぐことができ、
結果として第２のｉ形アモルフアス層８へのｐ形
不純物の混入量を著しく低減できる。 As described above, in this embodiment, since the thin first i-type amorphous layer 7 is generated using low RF power, it is possible to suppress the ejection of p-type impurities from the p-type amorphous layer 2. In addition, since the second i-type amorphous layer 8 is generated by high RF power, the film quality does not deteriorate. Furthermore, due to the presence of the first i-type amorphous layer 7,
It is possible to prevent p-type impurities from entering the second i-type amorphous layer 8 from the p-type amorphous layer 2,
As a result, the amount of p-type impurities mixed into the second i-type amorphous layer 8 can be significantly reduced.
その結果、ｐ形不純物の混入量が少なく、か
つ、大部分を占める第２のｉ形アモルフアス層８
の膜厚が良好であるので、全体として実質的に膜
厚の良好なｉ形アモルフアス層が得られ、アモル
フアスシリコン太陽電池の特性、特に変換効率の
向上を図ることができる。 As a result, the second i-type amorphous layer 8 has a small amount of p-type impurity mixed in and occupies most of the p-type impurity.
Since the film thickness is good, an i-type amorphous layer having a substantially good film thickness as a whole can be obtained, and the characteristics of the amorphous silicon solar cell, especially the conversion efficiency, can be improved.
なお、上記実施例では基板１側からｐ形、ｉ
形、ｎ形のそれぞれアモルフアス層２，３，４で
あつたが、逆に基板１側からｎ形、ｉ形、ｐ形の
それぞれアモルフアス層からなるアモルフアスシ
リコン太陽電池においても、同様の効果を奏する
ものであり、この場合混入不純物はｎ形不純物と
なるものである。 In the above embodiment, p-type, i-type
The same effect can be obtained in an amorphous silicon solar cell consisting of amorphous layers 2, 3, and 4 of amorphous amorphous and n-type, respectively, but conversely, an amorphous silicon solar cell consisting of amorphous amorphous layers of n-type, i-type, and p-type from the substrate 1 side. In this case, the mixed impurity is an n-type impurity.
この発明は以上述べたように、pin接合構造を
有するアモルフアスシリコン太陽電池の製造方法
において、低いRFパワーにて薄い第１のｉ形ア
モルフアス層を形成し、これに続いて高いRFパ
ワーにて厚い第２のｉ形アモルフアス層を形成す
るようにしたので、全体として不純物の混入が著
しく少なく、かつ膜質の良いｉ形アモルフアス層
が得られ、アモルフアスシリコン太陽電池の特
性、特に変換効率の改善が図れるという効果があ
る。 As described above, the present invention is a method for manufacturing an amorphous silicon solar cell having a pin junction structure, in which a thin first i-type amorphous layer is formed using low RF power, and then a thin first i-type amorphous layer is formed using high RF power. Since a thick second i-type amorphous layer is formed, an i-type amorphous layer with significantly less contamination of impurities and good film quality can be obtained, which improves the characteristics of amorphous silicon solar cells, especially the conversion efficiency. This has the effect of being able to achieve this.
第１図は従来のアモルフアスシリコン太陽電池
を示す断面図、第２図はこの発明の一実施例を示
すアモルフアスシリコン太陽電池の断面図であ
る。
図において１は基板、２はｐ形アモルフアス
層、３はｉ形アモルフアス層、４はｎ形アモルフ
アス層、５……反射防止膜、６……集電電極、７
は第１のｉ形アモルフアス層、８は第２のｉ形ア
モルフアス層である。なお、各図中、同一符号は
同一、又は相当部分を示す。
FIG. 1 is a sectional view showing a conventional amorphous silicon solar cell, and FIG. 2 is a sectional view of an amorphous silicon solar cell showing an embodiment of the present invention. In the figure, 1 is a substrate, 2 is a p-type amorphous layer, 3 is an i-type amorphous layer, 4 is an n-type amorphous layer, 5... antireflection film, 6... current collecting electrode, 7
is the first i-type amorphous layer, and 8 is the second i-type amorphous layer. In each figure, the same reference numerals indicate the same or equivalent parts.
Claims (1)
太陽電池をRFパワーのグロー放電法を用いて製
造する方法において、 低いRFパワーのグロー放電により薄い第１の
ｉ形アモルフアス層を形成する第１の工程と、 これに続いて高いRFパワーのグロー放電によ
り厚い第２のｉ形アモルフアス層を形成する第２
の工程とを含むことを特徴とするアモルフアスシ
リコン太陽電池の製造方法。[Claims] In a method for manufacturing an amorphous silicon solar cell having a 1-pin junction structure using an RF power glow discharge method, a thin first i-type amorphous layer is formed by low RF power glow discharge. a first step, followed by a second step in which a thick second i-type amorphous layer is formed by a high RF power glow discharge;
A method for manufacturing an amorphous silicon solar cell, comprising the steps of:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57216990A JPS59107574A (en) | 1982-12-13 | 1982-12-13 | Manufacture of amorphous silicon solar cell |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57216990A JPS59107574A (en) | 1982-12-13 | 1982-12-13 | Manufacture of amorphous silicon solar cell |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59107574A JPS59107574A (en) | 1984-06-21 |
| JPS6310591B2 true JPS6310591B2 (en) | 1988-03-08 |
Family
ID=16697079
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57216990A Granted JPS59107574A (en) | 1982-12-13 | 1982-12-13 | Manufacture of amorphous silicon solar cell |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59107574A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01154679U (en) * | 1988-04-19 | 1989-10-24 |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3516117A1 (en) * | 1985-05-04 | 1986-11-06 | Telefunken electronic GmbH, 7100 Heilbronn | SOLAR CELL |
| JPS62101083A (en) * | 1985-10-28 | 1987-05-11 | Kanegafuchi Chem Ind Co Ltd | Manufacture of semiconductor device |
| JPH0714075B2 (en) * | 1986-01-31 | 1995-02-15 | 三井東圧化学株式会社 | Method for manufacturing photoelectric conversion element |
| JPH0799776B2 (en) * | 1986-02-14 | 1995-10-25 | 住友電気工業株式会社 | Method for manufacturing amorphous silicon solar cell |
| JPS62190778A (en) * | 1986-02-18 | 1987-08-20 | Tech Res Assoc Conduct Inorg Compo | Photoelectric conversion device |
| JPS6340383A (en) * | 1986-08-06 | 1988-02-20 | Hitachi Ltd | Manufacture of amorphous solar cell |
| JPH0815220B2 (en) * | 1987-03-10 | 1996-02-14 | 三井東圧化学株式会社 | Method for manufacturing photoelectric conversion element |
| KR910007465B1 (en) * | 1988-10-27 | 1991-09-26 | 삼성전관 주식회사 | Making method of solar cell of amorphous silicon |
| US5070027A (en) * | 1989-02-23 | 1991-12-03 | Matsushita Electric Industrial Co., Ltd. | Method of forming a heterostructure diode |
| JP2644901B2 (en) * | 1990-01-19 | 1997-08-25 | 株式会社日立製作所 | Method for manufacturing pin type amorphous silicon solar cell |
| AU632241B2 (en) * | 1990-09-06 | 1992-12-17 | Mitsui Toatsu Chemicals Inc. | Amorphous silicon solar cell and method for manufacturing the same |
| JP3025179B2 (en) * | 1995-09-28 | 2000-03-27 | キヤノン株式会社 | Method for forming photoelectric conversion element |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56150876A (en) * | 1980-04-24 | 1981-11-21 | Sanyo Electric Co Ltd | Photovoltaic device |
-
1982
- 1982-12-13 JP JP57216990A patent/JPS59107574A/en active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56150876A (en) * | 1980-04-24 | 1981-11-21 | Sanyo Electric Co Ltd | Photovoltaic device |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01154679U (en) * | 1988-04-19 | 1989-10-24 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS59107574A (en) | 1984-06-21 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US6566159B2 (en) | Method of manufacturing tandem thin-film solar cell | |
| US6368892B1 (en) | Monolithic multi-junction solar cells with amorphous silicon and CIS and their alloys | |
| US7560750B2 (en) | Solar cell device | |
| EP2439780B1 (en) | Photovoltaic cell | |
| US6383898B1 (en) | Method for manufacturing photoelectric conversion device | |
| US20100132774A1 (en) | Thin Film Silicon Solar Cell Device With Amorphous Window Layer | |
| KR101631450B1 (en) | Solar cell | |
| EP1503427A1 (en) | Method for fabricating tandem thin film photoelectric converter | |
| JP5314697B2 (en) | Silicon-based thin film solar cell and method for manufacturing the same | |
| US5437734A (en) | Solar cell | |
| JPS6310591B2 (en) | ||
| JP3416364B2 (en) | Photovoltaic element and method for manufacturing the same | |
| JP2007115916A (en) | Compound solar cell and method of manufacturing same | |
| JPH04296063A (en) | Solar cell element | |
| Desrues et al. | Ultra-thin Poly-Si/SiOx passivating contacts integration for high efficiency solar cells on n-type cast mono silicon wafers | |
| CN111739970B (en) | Stacked single-sheet positive-deterioration ground-type concentrating solar cell | |
| JPH05275725A (en) | Photovoltaic device and its manufacture | |
| US4672148A (en) | Thin-film solar cells | |
| JPH0878709A (en) | Solar battery | |
| JPH0823114A (en) | Solar cell | |
| KR102661526B1 (en) | Hetero-Junction Solar Cell And The Manufacturing Method Thereof | |
| US4366334A (en) | Photovoltaic cell usable as a solar cell | |
| JP2001007356A (en) | Thin-film solar cell | |
| JPH04290274A (en) | Photoelectric transducer | |
| JP3753556B2 (en) | Photoelectric conversion element and manufacturing method thereof |