JPS56138848A - Photoelectric surface mask - Google Patents
Photoelectric surface maskInfo
- Publication number
- JPS56138848A JPS56138848A JP4251780A JP4251780A JPS56138848A JP S56138848 A JPS56138848 A JP S56138848A JP 4251780 A JP4251780 A JP 4251780A JP 4251780 A JP4251780 A JP 4251780A JP S56138848 A JPS56138848 A JP S56138848A
- Authority
- JP
- Japan
- Prior art keywords
- mask
- photoelectric surface
- cathode material
- surface mask
- contrast
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
- H01J1/02—Main electrodes
- H01J1/34—Photo-emissive cathodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2201/00—Electrodes common to discharge tubes
- H01J2201/34—Photoemissive electrodes
- H01J2201/342—Cathodes
- H01J2201/3421—Composition of the emitting surface
- H01J2201/3425—Metals, metal alloys
Abstract
PURPOSE:To make a photoelectric surface mask have its conductivity without reducing the contrast of the mask pattern by forming between a transparent substrate and a cathode material conductive films which allow a transmission factor of 80% or more for the ultraviolet rays in use. CONSTITUTION:A rear electrode 2 is formed on a transparent substrate 1 by applying indium oxide up to its thickness of about 100 A. Chromium is applied on it as a screening film 3 and a pattern is formed by performing etching. Cesium iodide is applied on it as a cathode material 4 to fabricate a photoelectric surface mask. As described the above, by using a conductive film whose transmission factor is 80% or less as the rear electrode 2, electrons can be supplied to the whole surface of the cathode material of the photoelectric surface mask without reducing the contrast of the mask pattern.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4251780A JPS56138848A (en) | 1980-03-31 | 1980-03-31 | Photoelectric surface mask |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4251780A JPS56138848A (en) | 1980-03-31 | 1980-03-31 | Photoelectric surface mask |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS56138848A true JPS56138848A (en) | 1981-10-29 |
Family
ID=12638262
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP4251780A Pending JPS56138848A (en) | 1980-03-31 | 1980-03-31 | Photoelectric surface mask |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS56138848A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2629266A1 (en) * | 1986-07-09 | 1989-09-29 | Radiotechnique Compelec | CONTACT DEVICE FOR PHOTOCATHODE OF PHOTOELECTRIC TUBES AND METHOD OF MANUFACTURE |
JPH0568875A (en) * | 1991-09-11 | 1993-03-23 | Ebara Res Co Ltd | Photoelectron emitting member |
JP2018077940A (en) * | 2016-11-07 | 2018-05-17 | 国立大学法人東京工業大学 | Nanoscale photocathode electron source |
-
1980
- 1980-03-31 JP JP4251780A patent/JPS56138848A/en active Pending
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2629266A1 (en) * | 1986-07-09 | 1989-09-29 | Radiotechnique Compelec | CONTACT DEVICE FOR PHOTOCATHODE OF PHOTOELECTRIC TUBES AND METHOD OF MANUFACTURE |
EP0416175A1 (en) * | 1986-07-09 | 1991-03-13 | Philips Composants | Contact device for the photocathodes of photoelectric tubes, and process for manufacturing same |
JPH0568875A (en) * | 1991-09-11 | 1993-03-23 | Ebara Res Co Ltd | Photoelectron emitting member |
JP2018077940A (en) * | 2016-11-07 | 2018-05-17 | 国立大学法人東京工業大学 | Nanoscale photocathode electron source |
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