JPS5370764A - Electrode formation method by lift off method - Google Patents

Electrode formation method by lift off method

Info

Publication number
JPS5370764A
JPS5370764A JP14686776A JP14686776A JPS5370764A JP S5370764 A JPS5370764 A JP S5370764A JP 14686776 A JP14686776 A JP 14686776A JP 14686776 A JP14686776 A JP 14686776A JP S5370764 A JPS5370764 A JP S5370764A
Authority
JP
Japan
Prior art keywords
lift
electrode formation
formation method
opaque
lifting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14686776A
Other languages
Japanese (ja)
Inventor
Toru Takeuchi
Mitsuyoshi Araki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP14686776A priority Critical patent/JPS5370764A/en
Publication of JPS5370764A publication Critical patent/JPS5370764A/en
Pending legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE: To form electrodes by forming a material which may be formed at about 150°C or under and is opaque to ultraviolet rays on a resist film and lifting it off with particular sharpness.
COPYRIGHT: (C)1978,JPO&Japio
JP14686776A 1976-12-07 1976-12-07 Electrode formation method by lift off method Pending JPS5370764A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14686776A JPS5370764A (en) 1976-12-07 1976-12-07 Electrode formation method by lift off method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14686776A JPS5370764A (en) 1976-12-07 1976-12-07 Electrode formation method by lift off method

Publications (1)

Publication Number Publication Date
JPS5370764A true JPS5370764A (en) 1978-06-23

Family

ID=15417351

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14686776A Pending JPS5370764A (en) 1976-12-07 1976-12-07 Electrode formation method by lift off method

Country Status (1)

Country Link
JP (1) JPS5370764A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55105348A (en) * 1979-02-08 1980-08-12 Chiyou Lsi Gijutsu Kenkyu Kumiai Manufacture of semiconductor device
JPS5821843A (en) * 1981-07-31 1983-02-08 Oki Electric Ind Co Ltd Manufacture of semiconductor device
JPS5867060A (en) * 1981-10-19 1983-04-21 Oki Electric Ind Co Ltd Manufacture of semiconductor integrated circuit device
JPS60167448A (en) * 1983-11-22 1985-08-30 ブリテイシユ・テレコミユニケ−シヨンズ・パブリツク・リミテツド・カンパニ Method of wiring metal of integrated circuit
US7741755B2 (en) 2005-10-28 2010-06-22 Fujifilm Corporation Recess-protrusion structure body, process for producing the same, piezoelectric device, and ink jet type recording head
US7816842B2 (en) 2007-03-26 2010-10-19 Fujifilm Corporation Patterned inorganic film formed of an inorganic material on a metal film having a surface which includes a plurality of surface-oxidized areas, piezoelectric device having the patterned inorganic film, and process for producing the inorganic film
CN105742380A (en) * 2016-03-30 2016-07-06 江苏欧达丰新能源科技发展有限公司 Coining process of solar cell grid line electrode pattern

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55105348A (en) * 1979-02-08 1980-08-12 Chiyou Lsi Gijutsu Kenkyu Kumiai Manufacture of semiconductor device
JPS5821843A (en) * 1981-07-31 1983-02-08 Oki Electric Ind Co Ltd Manufacture of semiconductor device
JPS5867060A (en) * 1981-10-19 1983-04-21 Oki Electric Ind Co Ltd Manufacture of semiconductor integrated circuit device
JPH0239092B2 (en) * 1981-10-19 1990-09-04 Oki Electric Ind Co Ltd
JPS60167448A (en) * 1983-11-22 1985-08-30 ブリテイシユ・テレコミユニケ−シヨンズ・パブリツク・リミテツド・カンパニ Method of wiring metal of integrated circuit
US7741755B2 (en) 2005-10-28 2010-06-22 Fujifilm Corporation Recess-protrusion structure body, process for producing the same, piezoelectric device, and ink jet type recording head
US7816842B2 (en) 2007-03-26 2010-10-19 Fujifilm Corporation Patterned inorganic film formed of an inorganic material on a metal film having a surface which includes a plurality of surface-oxidized areas, piezoelectric device having the patterned inorganic film, and process for producing the inorganic film
US8017185B2 (en) 2007-03-26 2011-09-13 Fujifilm Corporation Patterned inorganic film, piezoelectric device, and process for producing the same
CN105742380A (en) * 2016-03-30 2016-07-06 江苏欧达丰新能源科技发展有限公司 Coining process of solar cell grid line electrode pattern
CN105742380B (en) * 2016-03-30 2017-12-19 江苏欧达丰新能源科技发展有限公司 The impressing processing method of solar cell gate line electrode figure

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