CN105742380B - The impressing processing method of solar cell gate line electrode figure - Google Patents
The impressing processing method of solar cell gate line electrode figure Download PDFInfo
- Publication number
- CN105742380B CN105742380B CN201610189088.5A CN201610189088A CN105742380B CN 105742380 B CN105742380 B CN 105742380B CN 201610189088 A CN201610189088 A CN 201610189088A CN 105742380 B CN105742380 B CN 105742380B
- Authority
- CN
- China
- Prior art keywords
- roller
- solar cell
- processing method
- gate line
- dry film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Links
- 238000003672 processing method Methods 0.000 title claims abstract description 10
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 6
- 229910052709 silver Inorganic materials 0.000 claims abstract description 6
- 239000004332 silver Substances 0.000 claims abstract description 6
- 238000005096 rolling process Methods 0.000 claims description 15
- 210000004027 cell Anatomy 0.000 claims description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 10
- 229910052710 silicon Inorganic materials 0.000 claims description 10
- 239000010703 silicon Substances 0.000 claims description 10
- 239000000463 material Substances 0.000 claims description 7
- 239000007789 gas Substances 0.000 claims description 6
- 238000005516 engineering process Methods 0.000 claims description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 3
- 229910052760 oxygen Inorganic materials 0.000 claims description 3
- 239000001301 oxygen Substances 0.000 claims description 3
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 claims description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 3
- 238000000034 method Methods 0.000 abstract description 4
- 238000007650 screen-printing Methods 0.000 abstract description 4
- 238000005245 sintering Methods 0.000 abstract description 3
- 238000004049 embossing Methods 0.000 abstract description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022433—Particular geometry of the grid contacts
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
The invention discloses a kind of impressing processing method of solar cell gate line electrode figure, the present invention utilizes roller nanometer embossing, breaks through line width and the thickness limitation of screen printing technique, obtains thinner, thinner front electrode grid line.The groove pattern structure that nano impression comes out can fill silver paste, and thermal sintering.
Description
Technical field
The present invention relates to technical field of solar batteries, more particularly to a kind of impressing of solar cell gate line electrode figure
Processing method.
Background technology
The front gate line electrode processing method of silicon solar cell is to form ag paste electrode figure using silk-screen printing at present
Shape, and pass through sintering curing.The minimum figure minimum feature and minimum thickness of traditional silk-screen printing receive the limitation of mesh, nothing
Method realizes the gate line electrode showing methods of " more shallow, closeer ", therefore causes silver paste consumption of materials big, and electrodes conduct performance
It is limited.
The content of the invention
In order to overcome drawbacks described above, the invention provides a kind of transfer solar cell gate line electrode of fine pattern structure
The impressing processing method of figure.
The present invention in order to solve its technical problem used by technical scheme be:A kind of solar cell gate line electrode figure
Impressing processing method, comprise the following steps:
1)Dry film is laid:Dry film is laid in solar cell surface, using rolling technology, dry film material is that thermoplasticity is photosensitive
Or water soluble film materials, such as photoresist, PVA, 20 ~ 80 microns of film thickness, the temperature range 60 ~ 120 during rolling are Celsius
Degree, pressure 10KPa ~ 200kPa, silicon chip is with respect to feed speed during rolling:5 ~ 600 mm/seconds;
2)Roller embossed electrode figure:60 ~ 120 degrees Celsius of temperature range when being imprinted using roller, pressure 0.5MPa ~
10MPa, silicon chip is with respect to feed speed during rolling:5 ~ 600 mm/seconds;
3)Plasma removes residual layer:Frequency selects microwave section, or radio band, and gas uses oxygen O2 or tetrafluoro
Change carbon CF4,5 ~ 200sccm of gas flow, 20 ~ 300W of power;
4)Roller imprints silver paste:Pressure 0.5MPa ~ 10MPa when being imprinted using roller, silicon chip is relative during rolling feeds speed
Degree:5 ~ 600 mm/seconds.
5)Dissolving removes dry film.
As a further improvement on the present invention, the step 2)In roller surface be provided with microprotrusion structure.
The beneficial effects of the invention are as follows:The present invention utilizes roller nanometer embossing, breaks through the line width of screen printing technique
Limited with thickness, obtain thinner, thinner front electrode grid line, the groove pattern structure that nano impression comes out can fill silver
Slurry, and thermal sintering.
Embodiment
In order to deepen the understanding of the present invention, below in conjunction with embodiment, the invention will be further described, the embodiment
It is only used for explaining the present invention, is not intended to limit the scope of the present invention..
A kind of impressing processing method of solar cell gate line electrode figure, comprises the following steps:
1)Dry film is laid:Dry film is laid in solar cell surface, using rolling technology, dry film material is that thermoplasticity is photosensitive
Or water soluble film materials, such as photoresist, PVA, 20 ~ 80 microns of film thickness, the temperature range 60 ~ 120 during rolling are Celsius
Degree, pressure 10KPa ~ 200kPa, silicon chip is with respect to feed speed during rolling:5 ~ 600 mm/seconds;
2)Roller embossed electrode figure:60 ~ 120 degrees Celsius of temperature range when being imprinted using roller, pressure 0.5MPa ~
10MPa, silicon chip is with respect to feed speed during rolling:5 ~ 600 mm/seconds;
3)Plasma removes residual layer:Frequency selects microwave section(Such as 2.4GHz), or radio band(Such as 13.56MHz),
Gas uses oxygen O2 or carbon tetrafluoride CF4,5 ~ 200sccm of gas flow, 20 ~ 300W of power;
4)Roller imprints silver paste:Pressure 0.5MPa ~ 10MPa when being imprinted using roller, silicon chip is relative during rolling feeds speed
Degree:5 ~ 600 mm/seconds.
5)Dissolving removes dry film.
The step 2)In roller surface be provided with microprotrusion structure, be transferred on the dry film of cell piece surface, formed grid line
Electrode pattern.
Claims (2)
- A kind of 1. impressing processing method of solar cell gate line electrode figure, it is characterised in that:Comprise the following steps:1)Dry film is laid:Dry film is laid in solar cell surface, using rolling technology, dry film material is that thermoplasticity is photosensitive or water Soluble film's material, 20 ~ 80 microns of film thickness, 60 ~ 120 degrees Celsius, pressure 10KPa ~ 200kPa of temperature range during rolling, Silicon chip is with respect to feed speed during rolling:5 ~ 600 mm/seconds;2)Roller embossed electrode figure:60 ~ 120 degrees Celsius, pressure 0.5MPa ~ 10MPa of temperature range when being imprinted using roller, Silicon chip is with respect to feed speed during rolling:5 ~ 600 mm/seconds;3)Plasma removes residual layer:Frequency selects microwave section, or radio band, and gas uses oxygen O2Or carbon tetrafluoride CF4, 5 ~ 200sccm of gas flow, 20 ~ 300W of power;4)Roller imprints silver paste:Pressure 0.5MPa ~ 10MPa when being imprinted using roller, silicon chip is with respect to feed speed during rolling:5~ 600 mm/seconds;5)Dissolving removes dry film.
- 2. the impressing processing method of solar cell gate line electrode figure according to claim 1, it is characterised in that:It is described Step 2)In roller surface be provided with microprotrusion structure.
Priority Applications (1)
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CN201610189088.5A CN105742380B (en) | 2016-03-30 | 2016-03-30 | The impressing processing method of solar cell gate line electrode figure |
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CN201610189088.5A CN105742380B (en) | 2016-03-30 | 2016-03-30 | The impressing processing method of solar cell gate line electrode figure |
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CN105742380A CN105742380A (en) | 2016-07-06 |
CN105742380B true CN105742380B (en) | 2017-12-19 |
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Families Citing this family (1)
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CN114921196B (en) * | 2018-11-13 | 2024-03-12 | 苏州赛伍应用技术股份有限公司 | Transfer film for silver paste gravure printing process of photovoltaic cell |
Citations (9)
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---|---|---|---|---|
JPS5370764A (en) * | 1976-12-07 | 1978-06-23 | Fujitsu Ltd | Electrode formation method by lift off method |
JPH02382A (en) * | 1987-12-30 | 1990-01-05 | Tonen Corp | Metallic substrate for solar cell, manufacture thereof and solar cell using said metallic substrate |
CN101807628A (en) * | 2010-04-02 | 2010-08-18 | 日强光伏科技有限公司 | Method for manufacturing front side grid line electrode of solar battery |
CN101847670A (en) * | 2010-01-27 | 2010-09-29 | 长春理工大学 | Method of using laser interference technology enhanced electrochemical technology for preparing nanometer gate |
CN102222538A (en) * | 2011-03-11 | 2011-10-19 | 苏州纳格光电科技有限公司 | Graphical flexible transparent conductive film and preparation method thereof |
CN102800763A (en) * | 2012-09-07 | 2012-11-28 | 泉州市博泰半导体科技有限公司 | Solar cell and method for producing grid line electrode of solar cell |
CN103149794A (en) * | 2011-12-06 | 2013-06-12 | 私立中原大学 | Roller-based imprinting system |
CN103456390A (en) * | 2013-02-05 | 2013-12-18 | 南昌欧菲光科技有限公司 | Conducting film and manufacturing method thereof |
CN103660276A (en) * | 2013-12-10 | 2014-03-26 | 宁波市鄞州科启动漫工业技术有限公司 | Improved roller impressing device |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102063951B (en) * | 2010-11-05 | 2013-07-03 | 苏州苏大维格光电科技股份有限公司 | Transparent conductive film and manufacturing method thereof |
-
2016
- 2016-03-30 CN CN201610189088.5A patent/CN105742380B/en active Active
Patent Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5370764A (en) * | 1976-12-07 | 1978-06-23 | Fujitsu Ltd | Electrode formation method by lift off method |
JPH02382A (en) * | 1987-12-30 | 1990-01-05 | Tonen Corp | Metallic substrate for solar cell, manufacture thereof and solar cell using said metallic substrate |
CN101847670A (en) * | 2010-01-27 | 2010-09-29 | 长春理工大学 | Method of using laser interference technology enhanced electrochemical technology for preparing nanometer gate |
CN101807628A (en) * | 2010-04-02 | 2010-08-18 | 日强光伏科技有限公司 | Method for manufacturing front side grid line electrode of solar battery |
CN102222538A (en) * | 2011-03-11 | 2011-10-19 | 苏州纳格光电科技有限公司 | Graphical flexible transparent conductive film and preparation method thereof |
CN103149794A (en) * | 2011-12-06 | 2013-06-12 | 私立中原大学 | Roller-based imprinting system |
CN102800763A (en) * | 2012-09-07 | 2012-11-28 | 泉州市博泰半导体科技有限公司 | Solar cell and method for producing grid line electrode of solar cell |
CN103456390A (en) * | 2013-02-05 | 2013-12-18 | 南昌欧菲光科技有限公司 | Conducting film and manufacturing method thereof |
CN103660276A (en) * | 2013-12-10 | 2014-03-26 | 宁波市鄞州科启动漫工业技术有限公司 | Improved roller impressing device |
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