CN105742380B - The impressing processing method of solar cell gate line electrode figure - Google Patents

The impressing processing method of solar cell gate line electrode figure Download PDF

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Publication number
CN105742380B
CN105742380B CN201610189088.5A CN201610189088A CN105742380B CN 105742380 B CN105742380 B CN 105742380B CN 201610189088 A CN201610189088 A CN 201610189088A CN 105742380 B CN105742380 B CN 105742380B
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China
Prior art keywords
roller
solar cell
processing method
gate line
dry film
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CN201610189088.5A
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CN105742380A (en
Inventor
朱学林
季益群
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Jiangsu Oudafeng New Energy Technology Development Co Ltd
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Jiangsu Oudafeng New Energy Technology Development Co Ltd
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    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L31/00Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02Details
    • H01L31/0224Electrodes
    • H01L31/022408Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/022433Particular geometry of the grid contacts
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy

Abstract

The invention discloses a kind of impressing processing method of solar cell gate line electrode figure, the present invention utilizes roller nanometer embossing, breaks through line width and the thickness limitation of screen printing technique, obtains thinner, thinner front electrode grid line.The groove pattern structure that nano impression comes out can fill silver paste, and thermal sintering.

Description

The impressing processing method of solar cell gate line electrode figure
Technical field
The present invention relates to technical field of solar batteries, more particularly to a kind of impressing of solar cell gate line electrode figure Processing method.
Background technology
The front gate line electrode processing method of silicon solar cell is to form ag paste electrode figure using silk-screen printing at present Shape, and pass through sintering curing.The minimum figure minimum feature and minimum thickness of traditional silk-screen printing receive the limitation of mesh, nothing Method realizes the gate line electrode showing methods of " more shallow, closeer ", therefore causes silver paste consumption of materials big, and electrodes conduct performance It is limited.
The content of the invention
In order to overcome drawbacks described above, the invention provides a kind of transfer solar cell gate line electrode of fine pattern structure The impressing processing method of figure.
The present invention in order to solve its technical problem used by technical scheme be:A kind of solar cell gate line electrode figure Impressing processing method, comprise the following steps:
1)Dry film is laid:Dry film is laid in solar cell surface, using rolling technology, dry film material is that thermoplasticity is photosensitive Or water soluble film materials, such as photoresist, PVA, 20 ~ 80 microns of film thickness, the temperature range 60 ~ 120 during rolling are Celsius Degree, pressure 10KPa ~ 200kPa, silicon chip is with respect to feed speed during rolling:5 ~ 600 mm/seconds;
2)Roller embossed electrode figure:60 ~ 120 degrees Celsius of temperature range when being imprinted using roller, pressure 0.5MPa ~ 10MPa, silicon chip is with respect to feed speed during rolling:5 ~ 600 mm/seconds;
3)Plasma removes residual layer:Frequency selects microwave section, or radio band, and gas uses oxygen O2 or tetrafluoro Change carbon CF4,5 ~ 200sccm of gas flow, 20 ~ 300W of power;
4)Roller imprints silver paste:Pressure 0.5MPa ~ 10MPa when being imprinted using roller, silicon chip is relative during rolling feeds speed Degree:5 ~ 600 mm/seconds.
5)Dissolving removes dry film.
As a further improvement on the present invention, the step 2)In roller surface be provided with microprotrusion structure.
The beneficial effects of the invention are as follows:The present invention utilizes roller nanometer embossing, breaks through the line width of screen printing technique Limited with thickness, obtain thinner, thinner front electrode grid line, the groove pattern structure that nano impression comes out can fill silver Slurry, and thermal sintering.
Embodiment
In order to deepen the understanding of the present invention, below in conjunction with embodiment, the invention will be further described, the embodiment It is only used for explaining the present invention, is not intended to limit the scope of the present invention..
A kind of impressing processing method of solar cell gate line electrode figure, comprises the following steps:
1)Dry film is laid:Dry film is laid in solar cell surface, using rolling technology, dry film material is that thermoplasticity is photosensitive Or water soluble film materials, such as photoresist, PVA, 20 ~ 80 microns of film thickness, the temperature range 60 ~ 120 during rolling are Celsius Degree, pressure 10KPa ~ 200kPa, silicon chip is with respect to feed speed during rolling:5 ~ 600 mm/seconds;
2)Roller embossed electrode figure:60 ~ 120 degrees Celsius of temperature range when being imprinted using roller, pressure 0.5MPa ~ 10MPa, silicon chip is with respect to feed speed during rolling:5 ~ 600 mm/seconds;
3)Plasma removes residual layer:Frequency selects microwave section(Such as 2.4GHz), or radio band(Such as 13.56MHz), Gas uses oxygen O2 or carbon tetrafluoride CF4,5 ~ 200sccm of gas flow, 20 ~ 300W of power;
4)Roller imprints silver paste:Pressure 0.5MPa ~ 10MPa when being imprinted using roller, silicon chip is relative during rolling feeds speed Degree:5 ~ 600 mm/seconds.
5)Dissolving removes dry film.
The step 2)In roller surface be provided with microprotrusion structure, be transferred on the dry film of cell piece surface, formed grid line Electrode pattern.

Claims (2)

  1. A kind of 1. impressing processing method of solar cell gate line electrode figure, it is characterised in that:Comprise the following steps:
    1)Dry film is laid:Dry film is laid in solar cell surface, using rolling technology, dry film material is that thermoplasticity is photosensitive or water Soluble film's material, 20 ~ 80 microns of film thickness, 60 ~ 120 degrees Celsius, pressure 10KPa ~ 200kPa of temperature range during rolling, Silicon chip is with respect to feed speed during rolling:5 ~ 600 mm/seconds;
    2)Roller embossed electrode figure:60 ~ 120 degrees Celsius, pressure 0.5MPa ~ 10MPa of temperature range when being imprinted using roller, Silicon chip is with respect to feed speed during rolling:5 ~ 600 mm/seconds;
    3)Plasma removes residual layer:Frequency selects microwave section, or radio band, and gas uses oxygen O2Or carbon tetrafluoride CF4, 5 ~ 200sccm of gas flow, 20 ~ 300W of power;
    4)Roller imprints silver paste:Pressure 0.5MPa ~ 10MPa when being imprinted using roller, silicon chip is with respect to feed speed during rolling:5~ 600 mm/seconds;
    5)Dissolving removes dry film.
  2. 2. the impressing processing method of solar cell gate line electrode figure according to claim 1, it is characterised in that:It is described Step 2)In roller surface be provided with microprotrusion structure.
CN201610189088.5A 2016-03-30 2016-03-30 The impressing processing method of solar cell gate line electrode figure Active CN105742380B (en)

Priority Applications (1)

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CN201610189088.5A CN105742380B (en) 2016-03-30 2016-03-30 The impressing processing method of solar cell gate line electrode figure

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Application Number Priority Date Filing Date Title
CN201610189088.5A CN105742380B (en) 2016-03-30 2016-03-30 The impressing processing method of solar cell gate line electrode figure

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CN105742380B true CN105742380B (en) 2017-12-19

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Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5370764A (en) * 1976-12-07 1978-06-23 Fujitsu Ltd Electrode formation method by lift off method
JPH02382A (en) * 1987-12-30 1990-01-05 Tonen Corp Metallic substrate for solar cell, manufacture thereof and solar cell using said metallic substrate
CN101807628A (en) * 2010-04-02 2010-08-18 日强光伏科技有限公司 Method for manufacturing front side grid line electrode of solar battery
CN101847670A (en) * 2010-01-27 2010-09-29 长春理工大学 Method of using laser interference technology enhanced electrochemical technology for preparing nanometer gate
CN102222538A (en) * 2011-03-11 2011-10-19 苏州纳格光电科技有限公司 Graphical flexible transparent conductive film and preparation method thereof
CN102800763A (en) * 2012-09-07 2012-11-28 泉州市博泰半导体科技有限公司 Solar cell and method for producing grid line electrode of solar cell
CN103149794A (en) * 2011-12-06 2013-06-12 私立中原大学 Roller-based imprinting system
CN103456390A (en) * 2013-02-05 2013-12-18 南昌欧菲光科技有限公司 Conducting film and manufacturing method thereof
CN103660276A (en) * 2013-12-10 2014-03-26 宁波市鄞州科启动漫工业技术有限公司 Improved roller impressing device

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102063951B (en) * 2010-11-05 2013-07-03 苏州苏大维格光电科技股份有限公司 Transparent conductive film and manufacturing method thereof

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5370764A (en) * 1976-12-07 1978-06-23 Fujitsu Ltd Electrode formation method by lift off method
JPH02382A (en) * 1987-12-30 1990-01-05 Tonen Corp Metallic substrate for solar cell, manufacture thereof and solar cell using said metallic substrate
CN101847670A (en) * 2010-01-27 2010-09-29 长春理工大学 Method of using laser interference technology enhanced electrochemical technology for preparing nanometer gate
CN101807628A (en) * 2010-04-02 2010-08-18 日强光伏科技有限公司 Method for manufacturing front side grid line electrode of solar battery
CN102222538A (en) * 2011-03-11 2011-10-19 苏州纳格光电科技有限公司 Graphical flexible transparent conductive film and preparation method thereof
CN103149794A (en) * 2011-12-06 2013-06-12 私立中原大学 Roller-based imprinting system
CN102800763A (en) * 2012-09-07 2012-11-28 泉州市博泰半导体科技有限公司 Solar cell and method for producing grid line electrode of solar cell
CN103456390A (en) * 2013-02-05 2013-12-18 南昌欧菲光科技有限公司 Conducting film and manufacturing method thereof
CN103660276A (en) * 2013-12-10 2014-03-26 宁波市鄞州科启动漫工业技术有限公司 Improved roller impressing device

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