CN105742380A - Coining process of solar cell grid line electrode pattern - Google Patents
Coining process of solar cell grid line electrode pattern Download PDFInfo
- Publication number
- CN105742380A CN105742380A CN201610189088.5A CN201610189088A CN105742380A CN 105742380 A CN105742380 A CN 105742380A CN 201610189088 A CN201610189088 A CN 201610189088A CN 105742380 A CN105742380 A CN 105742380A
- Authority
- CN
- China
- Prior art keywords
- roller
- dry film
- line electrode
- during rolling
- adopt
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims abstract description 13
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 6
- 229910052709 silver Inorganic materials 0.000 claims abstract description 6
- 239000004332 silver Substances 0.000 claims abstract description 6
- 238000005096 rolling process Methods 0.000 claims description 15
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 10
- 229910052710 silicon Inorganic materials 0.000 claims description 10
- 239000010703 silicon Substances 0.000 claims description 10
- 239000000463 material Substances 0.000 claims description 7
- 239000007789 gas Substances 0.000 claims description 6
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 claims description 6
- 210000004027 cell Anatomy 0.000 claims description 5
- 238000005516 engineering process Methods 0.000 claims description 4
- 239000002002 slurry Substances 0.000 claims description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 3
- 229910052760 oxygen Inorganic materials 0.000 claims description 3
- 239000001301 oxygen Substances 0.000 claims description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 3
- 238000007650 screen-printing Methods 0.000 abstract description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000004049 embossing Methods 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022433—Particular geometry of the grid contacts
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
The invention discloses a coining process of a solar cell grid line electrode pattern. With the utilization of a roller nanometer coining technique, the limitation of line width and thickness of a screen printing technique is broken through, and a more slim and thinner positive electrode grid line is obtained. A groove pattern structure obtained through nanometer coining can be filled with silver paste and is sintered and formed.
Description
Technical field
The present invention relates to technical field of solar batteries, particularly to a kind of coinging method of solaode gate line electrode figure.
Background technology
The front gate line electrode processing method of current silicon solar cell is to adopt silk screen printing to form ag paste electrode figure, and through sintering curing.The minimum figure minimum feature of traditional silk screen printing and minimum thickness receive the restriction of mesh, it is impossible to realize the gate line electrode showing methods of " more shallow, closeer ", thus result in silver pulp material consumption big, and electrodes conduct performance is limited.
Summary of the invention
In order to overcome drawbacks described above, the invention provides the coinging method of the transfer solaode gate line electrode figure of a kind of fine pattern structure.
The present invention is to solve that its technical problem be the technical scheme is that a kind of coinging method of solaode gate line electrode figure, comprise the following steps:
1) dry film is laid: lay dry film in solar cell surface, adopt rolling technology, dry film material is that thermoplasticity is photosensitive or water soluble film materials, such as photoresist, PVA etc., film thickness 20 ~ 80 microns, temperature range during rolling 60 ~ 120 degrees Celsius, pressure 10KPa ~ 200kPa, silicon chip relative feed speed during rolling: 5 ~ 600 mm/second；
2) roller embossed electrode figure: adopt the temperature range 60 ~ 120 degrees Celsius during roller impressing, pressure 0.5MPa ~ 10MPa, silicon chip relative feed speed during rolling: 5 ~ 600 mm/second；
3) plasma removes residual layer: frequency selects microwave section or radio band, and gas adopts oxygen O2 or carbon tetrafluoride CF4, gas flow 5 ~ 200sccm, power 20 ~ 300W；
4) roller impressing silver slurry: adopt pressure 0.5MPa ~ 10MPa during roller impressing, silicon chip relative feed speed during rolling: 5 ~ 600 mm/second.
5) removal dry film is dissolved.
As a further improvement on the present invention, described step 2) in roller surface be provided with microprotrusion structure.
The invention has the beneficial effects as follows: the present invention utilizes roller nanometer embossing, break through live width and the thickness restriction of screen printing technique, it is thus achieved that more carefully, thinner front electrode grid line, nano impression groove pattern structure out can fill silver slurry thermal sintering.
Detailed description of the invention
In order to deepen the understanding of the present invention, below in conjunction with embodiment, the invention will be further described, and this embodiment is only used for explaining the present invention, is not intended that limiting the scope of the present invention.
A kind of coinging method of solaode gate line electrode figure, comprises the following steps:
1) dry film is laid: lay dry film in solar cell surface, adopt rolling technology, dry film material is that thermoplasticity is photosensitive or water soluble film materials, such as photoresist, PVA etc., film thickness 20 ~ 80 microns, temperature range during rolling 60 ~ 120 degrees Celsius, pressure 10KPa ~ 200kPa, silicon chip relative feed speed during rolling: 5 ~ 600 mm/second；
2) roller embossed electrode figure: adopt the temperature range 60 ~ 120 degrees Celsius during roller impressing, pressure 0.5MPa ~ 10MPa, silicon chip relative feed speed during rolling: 5 ~ 600 mm/second；
3) plasma removes residual layer: frequency selects microwave section (such as 2.4GHz) or radio band (such as 13.56MHz), and gas adopts oxygen O2 or carbon tetrafluoride CF4, gas flow 5 ~ 200sccm, power 20 ~ 300W；
4) roller impressing silver slurry: adopt pressure 0.5MPa ~ 10MPa during roller impressing, silicon chip relative feed speed during rolling: 5 ~ 600 mm/second.
5) removal dry film is dissolved.
Described step 2) in roller surface be provided with microprotrusion structure, transfer on the dry film of cell piece surface, formed gate line electrode figure.
Claims (2)
1. the coinging method of a solaode gate line electrode figure, it is characterised in that: comprise the following steps:
1) dry film is laid: lay dry film in solar cell surface, adopt rolling technology, dry film material is that thermoplasticity is photosensitive or water soluble film materials, film thickness 20 ~ 80 microns, temperature range during rolling 60 ~ 120 degrees Celsius, pressure 10KPa ~ 200kPa, silicon chip relative feed speed during rolling: 5 ~ 600 mm/second；
2) roller embossed electrode figure: adopt the temperature range 60 ~ 120 degrees Celsius during roller impressing, pressure 0.5MPa ~ 10MPa, silicon chip relative feed speed during rolling: 5 ~ 600 mm/second；
3) plasma removes residual layer: frequency selects microwave section or radio band, and gas adopts oxygen O2 or carbon tetrafluoride CF4, gas flow 5 ~ 200sccm, power 20 ~ 300W；
4) roller impressing silver slurry: adopt pressure 0.5MPa ~ 10MPa during roller impressing, silicon chip relative feed speed during rolling: 5 ~ 600 mm/second；
5) removal dry film is dissolved.
2. the coinging method of solaode gate line electrode figure according to claim 1, it is characterised in that: described step 2) in roller surface be provided with microprotrusion structure.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610189088.5A CN105742380B (en) | 2016-03-30 | 2016-03-30 | The impressing processing method of solar cell gate line electrode figure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610189088.5A CN105742380B (en) | 2016-03-30 | 2016-03-30 | The impressing processing method of solar cell gate line electrode figure |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105742380A true CN105742380A (en) | 2016-07-06 |
| CN105742380B CN105742380B (en) | 2017-12-19 |
Family
ID=56252285
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610189088.5A Active CN105742380B (en) | 2016-03-30 | 2016-03-30 | The impressing processing method of solar cell gate line electrode figure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105742380B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114921196A (en) * | 2018-11-13 | 2022-08-19 | 苏州赛伍应用技术股份有限公司 | Transfer printing glue and transfer printing film for gravure printing process of silver paste of photovoltaic cell piece |
Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5370764A (en) * | 1976-12-07 | 1978-06-23 | Fujitsu Ltd | Electrode formation method by lift off method |
| JPH02382A (en) * | 1987-12-30 | 1990-01-05 | Tonen Corp | Metallic substrate for solar cell, manufacture thereof and solar cell using said metallic substrate |
| CN101807628A (en) * | 2010-04-02 | 2010-08-18 | 日强光伏科技有限公司 | Method for manufacturing front side grid line electrode of solar battery |
| CN101847670A (en) * | 2010-01-27 | 2010-09-29 | 长春理工大学 | Method of using laser interference technology enhanced electrochemical technology for preparing nanometer gate |
| CN102063951A (en) * | 2010-11-05 | 2011-05-18 | 苏州苏大维格光电科技股份有限公司 | Transparent conductive film and manufacturing method thereof |
| CN102222538A (en) * | 2011-03-11 | 2011-10-19 | 苏州纳格光电科技有限公司 | Graphical flexible transparent conductive film and preparation method thereof |
| CN102800763A (en) * | 2012-09-07 | 2012-11-28 | 泉州市博泰半导体科技有限公司 | Solar cell and method for producing grid line electrode of solar cell |
| CN103149794A (en) * | 2011-12-06 | 2013-06-12 | 私立中原大学 | Roller type impression system |
| CN103456390A (en) * | 2013-02-05 | 2013-12-18 | 南昌欧菲光科技有限公司 | Conducting film and manufacturing method thereof |
| CN103660276A (en) * | 2013-12-10 | 2014-03-26 | 宁波市鄞州科启动漫工业技术有限公司 | Improved roller impressing device |
-
2016
- 2016-03-30 CN CN201610189088.5A patent/CN105742380B/en active Active
Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5370764A (en) * | 1976-12-07 | 1978-06-23 | Fujitsu Ltd | Electrode formation method by lift off method |
| JPH02382A (en) * | 1987-12-30 | 1990-01-05 | Tonen Corp | Metallic substrate for solar cell, manufacture thereof and solar cell using said metallic substrate |
| CN101847670A (en) * | 2010-01-27 | 2010-09-29 | 长春理工大学 | Method of using laser interference technology enhanced electrochemical technology for preparing nanometer gate |
| CN101807628A (en) * | 2010-04-02 | 2010-08-18 | 日强光伏科技有限公司 | Method for manufacturing front side grid line electrode of solar battery |
| CN102063951A (en) * | 2010-11-05 | 2011-05-18 | 苏州苏大维格光电科技股份有限公司 | Transparent conductive film and manufacturing method thereof |
| CN102222538A (en) * | 2011-03-11 | 2011-10-19 | 苏州纳格光电科技有限公司 | Graphical flexible transparent conductive film and preparation method thereof |
| CN103149794A (en) * | 2011-12-06 | 2013-06-12 | 私立中原大学 | Roller type impression system |
| CN102800763A (en) * | 2012-09-07 | 2012-11-28 | 泉州市博泰半导体科技有限公司 | Solar cell and method for producing grid line electrode of solar cell |
| CN103456390A (en) * | 2013-02-05 | 2013-12-18 | 南昌欧菲光科技有限公司 | Conducting film and manufacturing method thereof |
| CN103660276A (en) * | 2013-12-10 | 2014-03-26 | 宁波市鄞州科启动漫工业技术有限公司 | Improved roller impressing device |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114921196A (en) * | 2018-11-13 | 2022-08-19 | 苏州赛伍应用技术股份有限公司 | Transfer printing glue and transfer printing film for gravure printing process of silver paste of photovoltaic cell piece |
| CN114921196B (en) * | 2018-11-13 | 2024-03-12 | 苏州赛伍应用技术股份有限公司 | Transfer film for silver paste gravure printing process of photovoltaic cell |
Also Published As
| Publication number | Publication date |
|---|---|
| CN105742380B (en) | 2017-12-19 |
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