CN204659164U - A kind of crystal silicon solar batteries positive electrode preparation facilities - Google Patents

A kind of crystal silicon solar batteries positive electrode preparation facilities Download PDF

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Publication number
CN204659164U
CN204659164U CN201520284690.8U CN201520284690U CN204659164U CN 204659164 U CN204659164 U CN 204659164U CN 201520284690 U CN201520284690 U CN 201520284690U CN 204659164 U CN204659164 U CN 204659164U
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China
Prior art keywords
positive electrode
half tone
crystal silicon
silicon solar
solar batteries
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CN201520284690.8U
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Chinese (zh)
Inventor
方结彬
秦崇德
石强
黄玉平
何达能
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Zhejiang Aiko Solar Energy Technology Co Ltd
Guangdong Aiko Solar Energy Technology Co Ltd
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Guangdong Aiko Solar Energy Technology Co Ltd
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Abstract

The utility model discloses a kind of crystal silicon solar batteries positive electrode preparation facilities, comprise positive electrode half tone and print head, positive electrode half tone comprises the half tone matrix be made up of silk screen and the latex rete be attached on matrix, described latex rete is provided with positive electrode pattern, positive electrode pattern is made up of M bar positive electrode main grid and the secondary grid of N bar positive electrode, positive electrode main grid width is greater than the secondary grid width of positive electrode, the latex rete of the secondary grid opening part of positive electrode is provided with protruding convex tendon, print head is provided with the pore that can discharge air-flow, during printing, print head to be positioned at above half tone matrix and to contact with half tone matrix phase.Compared with prior art, the utility model has while raising electrode conductivity, does not increase the shading-area of electrode, thus the advantage of the secondary grid line broken string of the photoelectric transformation efficiency, effectively minimizing positive electrode main gate line and the positive electrode that improve battery.

Description

A kind of crystal silicon solar batteries positive electrode preparation facilities
Technical field
The utility model relates to technical field of solar batteries, particularly relates to a kind of crystal silicon solar batteries positive electrode preparation facilities.
Background technology
Solar cell is that one absorbs solar radiant energy effectively, utilize photovoltaic effect that luminous energy is converted to the device of electric energy, when solar irradiation is in semiconductor P-N junction (P-N Junction), form new hole-electron to (V-E pair), under the effect of P-N junction electric field, hole flows to P district by N district, and electronics flows to N district by P district, just forms electric current after connecting circuit.
The manufacturing process of crystal silicon solar batteries has 6 procedures, is respectively making herbs into wool, diffusion, dephosphorization silex glass and back of the body knot, plated film, serigraphy, sintering.Wherein serigraphy is used for manufacturing the electrode of solar cell, and it is divided into back electrode printing, and the printing of aluminium back surface field and positive electrode print three steps.Back electrode printing refers at cell backside printing silver slurry, forms back electrode, be used for collecting and conductive electric current after oven dry.The printing of aluminium back surface field refers at the printed portions aluminium paste of cell backside except back electrode and edge, forms aluminium back surface field after drying.Positive electrode printing refers at battery front side printing silver slurry, forms positive electrode main gate line and the secondary grid line of positive electrode, be used for collecting and conductive electric current after sintering.
Positive electrode printing adopts the mode of traditional silk-screened, and utilize printing machine and half tone to be printed onto on silicon chip by silver slurry, silver slurry forms positive electrode pattern by the tapping in half tone figure on silicon chip.Positive electrode pattern comprises main grid and secondary grid.The number of main grid is less than the number of secondary grid, the width of main grid is much larger than the width of secondary grid, but the height of secondary grid is low, silver slurry is when secondary grid form positive electrode pair grid line, there is the shortcoming that the depth-width ratio photoelectric transformation efficiency that is less, battery of the secondary grid line of positive electrode is low, the mode of serigraphy easily can occur that the problem broken appears in positive electrode main gate line and the secondary grid line of positive electrode.
Utility model content
Technical problem to be solved in the utility model is, a kind of crystal silicon solar batteries positive electrode preparation facilities is provided, can when ensureing that latex film consumption increases little, increase considerably the height of the secondary grid of positive electrode, thus increasing the depth-width ratio of the secondary grid line of positive electrode, the photoelectric transformation efficiency improving battery also effectively can reduce the problem of positive electrode main gate line and the secondary grid line broken string of positive electrode.
In order to solve the problems of the technologies described above, the utility model provides a kind of crystal silicon solar batteries positive electrode preparation facilities, comprise positive electrode half tone and print head, positive electrode half tone comprises the half tone matrix be made up of silk screen and the latex rete be attached on matrix, described latex rete is provided with positive electrode pattern, positive electrode pattern is made up of M bar positive electrode main grid and the secondary grid of N bar positive electrode, positive electrode main grid width is greater than the secondary grid width of positive electrode, the latex rete of the secondary grid opening part of positive electrode is provided with protruding convex tendon, print head is provided with the pore that can discharge air-flow, during printing, print head to be positioned at above half tone matrix and to contact with half tone matrix phase.
As the improvement of such scheme, described pore is disposed side by side on print head.
As the improvement of such scheme, the quantity of described pore is 5 ~ 50, and the diameter of pore is 1 ~ 2cm, and stream pressure is 0.5 ~ 5Mpa.
As the improvement of such scheme, the latex rete of described positive electrode main grid opening part is also provided with protruding convex tendon.
As the improvement of such scheme, the thickness of described latex rete is 5 ~ 10 μm, and the height of convex tendon is 20 ~ 40 μm.
As the improvement of such scheme, described positive electrode main grid number: 1<M<10, the secondary grizzly bar number of positive electrode: 60<N<150.
As the improvement of such scheme, the width of described positive electrode main grid is 1 ~ 1.5mm, and the width of the secondary grid of positive electrode is 20 ~ 100 μm.
As the improvement of such scheme, described half tone matrix is mesh rhombus silk screen of the same size.
As the improvement of such scheme, described half tone matrix is intersect by two groups that tilt at a certain angle parallel net bars the rhombus silk screen formed.
Compared with prior art, the utility model is by changing the structure of latex rete, protruding convex tendon is provided with at the latex rete of the secondary grid opening part of positive electrode, when ensureing that latex consumption increases little, increase the thickness of latex rete at the secondary grid opening part of positive electrode, during print head printing, the silver slurry that the pore release air-flow of print head assists print head to export smoothly enters positive electrode main grid and the secondary grid of positive electrode by half tone matrix thus forms positive electrode main gate line and positive electrode pair grid line, the height that can increase considerably the secondary grid line of positive electrode also increases the depth-width ratio of the secondary grid line of positive electrode simultaneously, when the secondary grid line height of positive electrode increases, also can ensure that silver slurry enters the secondary grid of positive electrode completely, have while raising electrode conductivity, do not increase the shading-area of electrode, thus improve the photoelectric transformation efficiency of battery, the advantage of effective minimizing positive electrode main gate line and the secondary grid line broken string of positive electrode.
Accompanying drawing explanation
Fig. 1 is the structural representation of the utility model positive electrode half tone;
Fig. 2 is A-A place sectional view in Fig. 1;
Fig. 3 is B-B place sectional view in Fig. 1;
Front view when Fig. 4 is the printing of a kind of crystal silicon solar batteries positive electrode of the utility model preparation facilities;
Fig. 5 is the top view of the utility model print head;
Fig. 6 is the structural representation of the utility model half tone matrix.
Detailed description of the invention
For making the purpose of this utility model, technical scheme and advantage clearly, below in conjunction with accompanying drawing, the utility model is described in further detail.
As shown in Figures 1 to 6, the utility model provides a kind of crystal silicon solar batteries positive electrode preparation facilities, comprise positive electrode half tone and the print head 5 being provided with pore 51, positive electrode half tone comprises the half tone matrix 1 be made up of silk screen and the latex rete 2 be attached on matrix, latex rete 2 is provided with positive electrode pattern, positive electrode pattern is made up of 1 to 10 positive electrode main grid 3 and 60 to 150 secondary grid 4 of positive electrode, positive electrode main grid 3 width is greater than the secondary grid width 4 of positive electrode, and the latex rete 2 of positive electrode main grid 3 and secondary grid 4 opening part of positive electrode is equipped with protruding convex tendon 21; Print head 5 to be positioned at when printing above half tone matrix 1 and to contact with half tone matrix 1, and pore 51 discharges the silver slurry that air-flow assists print head 5 to export and enters positive electrode main grid 3 and the secondary grid 4 of positive electrode by half tone matrix 1 smoothly.
Pore 51 is disposed side by side on print head 5, and the quantity of pore 51 is 5 ~ 50, and diameter is 1 ~ 2cm, and stream pressure is 0.5 ~ 5Mpa.
The thickness of latex rete 2 is 5 ~ 10 μm, and the height of convex tendon 21 is 20 ~ 40 μm; The number of positive electrode main grid 3: 1<M<10, the number of the secondary grid 4 of positive electrode: 60<N<150; The width of positive electrode main grid 3 is 1 ~ 1.5mm, and the width of the secondary grid 4 of positive electrode is 20 ~ 100 μm.
Half tone matrix 1 is in the same size and two groups that tilt at a certain angle parallel net bars intersect the rhombus silk screen formed by mesh.The silk screen of diamond structure is adopted to be not easy distortion, printing good stability.
Compared with prior art, the utility model is by changing the structure of latex rete 2, protruding convex tendon 21 is provided with at the latex rete 2 of secondary grid 4 opening part of positive electrode, when ensureing that latex consumption increases little, increase the thickness of latex rete 2 at secondary grid 4 opening part of positive electrode, when print head 5 prints, the pore 51 of print head 5 discharges silver slurry that air-flow assists print head 5 to export and enters positive electrode main grid 3 and the secondary grid 4 of positive electrode by half tone matrix 1 smoothly thus form positive electrode main gate line and the secondary grid line of positive electrode, the height that can increase considerably the secondary grid line of positive electrode also increases the depth-width ratio of the secondary grid line of positive electrode simultaneously, when the secondary grid line 4 of positive electrode highly increases, also can ensure that silver slurry enters the secondary grid 4 of positive electrode completely, have while raising electrode conductivity, do not increase the shading-area of electrode, thus improve the photoelectric transformation efficiency of battery, the advantage of effective minimizing positive electrode main gate line and the secondary grid line broken string of positive electrode.
It should be noted that, the latex rete 2 of positive electrode main grid 3 opening part is also provided with protruding convex tendon 21, the height that also can increase considerably positive electrode main gate line also increases the depth-width ratio of positive electrode main gate line simultaneously, when positive electrode main grid 3 highly increases, also can ensure that silver slurry enters in positive electrode main grid 3 completely, have while raising electrode conductivity, do not increase the shading-area of electrode, thus improve the advantage of the photoelectric transformation efficiency of battery.
Above disclosedly be only a kind of preferred embodiment of the utility model, certainly can not limit the interest field of the utility model with this, therefore according to the equivalent variations that the utility model claim is done, still belong to the scope that the utility model is contained.

Claims (9)

1. a crystal silicon solar batteries positive electrode preparation facilities, it is characterized in that, comprise positive electrode half tone and print head, positive electrode half tone comprises the half tone matrix be made up of silk screen and the latex rete be attached on matrix, described latex rete is provided with positive electrode pattern, positive electrode pattern is made up of M bar positive electrode main grid and the secondary grid of N bar positive electrode, positive electrode main grid width is greater than the secondary grid width of positive electrode, the latex rete of the secondary grid opening part of positive electrode is provided with protruding convex tendon, print head is provided with the pore that can discharge air-flow, during printing, print head to be positioned at above half tone matrix and to contact with half tone matrix phase.
2. a kind of crystal silicon solar batteries positive electrode preparation facilities as claimed in claim 1, it is characterized in that, described pore is disposed side by side on print head.
3. a kind of crystal silicon solar batteries positive electrode preparation facilities as claimed in claim 1, it is characterized in that, the quantity of described pore is 5 ~ 50, and the diameter of pore is 1 ~ 2cm, and stream pressure is 0.5 ~ 5Mpa.
4. a kind of crystal silicon solar batteries positive electrode preparation facilities as claimed in claim 1, is characterized in that, the latex rete of described positive electrode main grid opening part is also provided with protruding convex tendon.
5. a kind of crystal silicon solar batteries positive electrode preparation facilities as claimed in claim 1, is characterized in that, the thickness of described latex rete is 5 ~ 10 μm, and the height of convex tendon is 20 ~ 40 μm.
6. a kind of crystal silicon solar batteries positive electrode preparation facilities as claimed in claim 1, it is characterized in that, described positive electrode main grid number: 1<M<10, the secondary grizzly bar number of positive electrode: 60<N<150.
7. a kind of crystal silicon solar batteries positive electrode preparation facilities as claimed in claim 1, is characterized in that, the width of described positive electrode main grid is 1 ~ 1.5mm, and the width of the secondary grid of positive electrode is 20 ~ 100 μm.
8. a kind of crystal silicon solar batteries positive electrode preparation facilities as claimed in claim 1, is characterized in that, described half tone matrix is mesh rhombus silk screen of the same size.
9. a kind of crystal silicon solar batteries positive electrode preparation facilities as claimed in claim 1, is characterized in that, described half tone matrix is intersect by two groups that tilt at a certain angle parallel net bars the rhombus silk screen formed.
CN201520284690.8U 2015-05-05 2015-05-05 A kind of crystal silicon solar batteries positive electrode preparation facilities Active CN204659164U (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104960322A (en) * 2015-05-05 2015-10-07 广东爱康太阳能科技有限公司 Crystalline silicon solar cell positive electrode preparation device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104960322A (en) * 2015-05-05 2015-10-07 广东爱康太阳能科技有限公司 Crystalline silicon solar cell positive electrode preparation device

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C14 Grant of patent or utility model
GR01 Patent grant
CP01 Change in the name or title of a patent holder

Address after: 528100, Sanshui District, Guangdong City, Foshan Industrial Park, No. C District, No. 69

Patentee after: GUANGDONG AIKO SOLAR ENERGY TECHNOLOGY Co.,Ltd.

Address before: 528100, Sanshui District, Guangdong City, Foshan Industrial Park, No. C District, No. 69

Patentee before: GUANGDONG AIKO SOLAR ENERGY TECHNOLOGY Co.,Ltd.

CP01 Change in the name or title of a patent holder
TR01 Transfer of patent right

Effective date of registration: 20180103

Address after: 322009 Zhejiang city in Jinhua Province town of Yiwu City, Su Fuk Road No. 126

Co-patentee after: GUANGDONG AIKO SOLAR ENERGY TECHNOLOGY Co.,Ltd.

Patentee after: ZHEJIANG AIKO SOLAR ENERGY TECHNOLOGY Co.,Ltd.

Address before: 528100, Sanshui District, Guangdong City, Foshan Industrial Park, No. C District, No. 69

Patentee before: GUANGDONG AIKO SOLAR ENERGY TECHNOLOGY Co.,Ltd.

TR01 Transfer of patent right