CN204109533U - A kind of aluminium back surface field half tone - Google Patents

A kind of aluminium back surface field half tone Download PDF

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Publication number
CN204109533U
CN204109533U CN201420473306.4U CN201420473306U CN204109533U CN 204109533 U CN204109533 U CN 204109533U CN 201420473306 U CN201420473306 U CN 201420473306U CN 204109533 U CN204109533 U CN 204109533U
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China
Prior art keywords
half tone
silver electrode
surface field
back surface
aluminium
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Active
Application number
CN201420473306.4U
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Chinese (zh)
Inventor
方结彬
秦崇德
石强
黄玉平
何达能
陈刚
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Zhejiang Aiko Solar Energy Technology Co Ltd
Guangdong Aiko Solar Energy Technology Co Ltd
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Guangdong Aiko Solar Energy Technology Co Ltd
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Priority to CN201420473306.4U priority Critical patent/CN204109533U/en
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Abstract

The utility model discloses a kind of aluminium back surface field half tone, comprise the half tone matrix be made up of silk screen, described half tone matrix is provided with the back of the body silver electrode baffle plate for hiding back of the body silver electrode; Described half tone matrix is also provided with the block that outline is regular geometric figure, and described block is uniformly distributed on the described half tone matrix region outside described back of the body silver electrode baffle plate each other at a distance.The utility model, by arranging the block that outline is regular geometric figure on described half tone matrix, while guarantee press quality, reduces aluminium paste consumption, reduces costs.

Description

A kind of aluminium back surface field half tone
Technical field
The utility model relates to technical field of solar batteries, particularly relates to a kind of printing screen plate making crystal silicon solar batteries aluminium back surface field.
Background technology
Solar cell is that one absorbs solar radiant energy effectively, utilize photovoltaic effect that luminous energy is converted to the device of electric energy, when solar irradiation is in semiconductor P-N junction (P-N Junction), form new hole-electron to (V-E pair), under the effect of P-N junction electric field, hole flows to P district by N district, and electronics flows to N district by P district, just forms electric current after connecting circuit.
The manufacturing process of crystal silicon solar batteries has 6 procedures, is respectively making herbs into wool, diffusion, dephosphorization silex glass and back of the body knot, plated film, serigraphy, sintering.Wherein serigraphy is used for manufacturing the electrode of solar cell, and it is divided into back electrode printing, and the printing of aluminium back surface field and positive electrode print three steps.Back electrode printing refers at cell backside printing silver slurry, forms 3 back electrodes, be used for collecting and conductive electric current after drying.The printing of aluminium back surface field refers at the printed portions aluminium paste of cell backside except back electrode and edge, forms aluminium back surface field after drying.Positive electrode printing refers at battery front side printing silver slurry, forms 3 positive electrodes, be used for collecting and conductive electric current after sintering.
The effect of aluminium back surface field mainly contains: after 1, forming alusil alloy with silicon, play the effect of gettering.2, produce heavily doped P-type layer at cell backside, form height knot.3, collect, conductive electric current is to back electrode.
The printing of aluminium back surface field adopts the mode of traditional silk-screened, utilizes printing machine and half tone to be printed onto on silicon chip by aluminium paste, the half tone figure of printing aluminium back surface field.Have also appeared mesh form by changing silk screen at present to reduce the bending mode of silicon chip, but on the consumption of aluminium paste reduce do not have substantial impact or impact little, to aluminium paste consumption greatly, silicon chip manufacturing cost is high for this mode.
Summary of the invention
Technical problem to be solved in the utility model is, provides a kind of aluminium back surface field half tone, while guarantee press quality, can reduce aluminium paste consumption, reduce costs.
In order to solve the problems of the technologies described above, the utility model provides a kind of aluminium back surface field half tone, comprises the half tone matrix be made up of silk screen, and described half tone matrix is provided with the back of the body silver electrode baffle plate for hiding back of the body silver electrode; Described half tone matrix is also provided with the block that outline is regular geometric figure, and described block is uniformly distributed on the described half tone matrix region outside described back of the body silver electrode baffle plate each other at a distance.
As the improvement of such scheme, the shape of described block is regular polygon, ellipse or circular.
As the improvement of such scheme, the shape of described block is circular, and its diameter is 0.1-5mm.
As the improvement of such scheme, the shape of described back of the body silver electrode baffle plate is corresponding with the shape of back of the body silver electrode, and the area of described back of the body silver electrode baffle plate is greater than the area of back of the body silver electrode.
As the improvement of such scheme, described half tone matrix is mesh rhombus silk screen of the same size.
As the improvement of such scheme, described half tone matrix is the parallel silk screen be made up of the net bar be parallel to each other tilted at a certain angle.
As the improvement of such scheme, the edge 0.5-1mm of described half tone matrix distance silicon chip.
Implement the utility model, there is following beneficial effect:
The utility model, by arranging the block that outline is regular geometric figure on described half tone matrix, while guarantee press quality, reduces aluminium paste consumption, reduces costs.
Accompanying drawing explanation
Fig. 1 is the structural representation of a kind of aluminium back surface field of the utility model half tone;
Fig. 2 is the structural representation of the half tone matrix of a kind of aluminium back surface field of the utility model half tone;
Fig. 3 is the another structural representation of the half tone matrix of a kind of aluminium of the utility model back surface field half tone.
Detailed description of the invention
For making the purpose of this utility model, technical scheme and advantage clearly, below in conjunction with accompanying drawing, the utility model is described in further detail.
As shown in Figure 1-Figure 3, the utility model embodiment provides a kind of aluminium back surface field half tone, comprises the half tone matrix 1 be made up of silk screen, and described half tone matrix 1 is provided with the back of the body silver electrode baffle plate 2 for hiding back of the body silver electrode; Described half tone matrix 1 is also provided with the block 3 that outline is regular geometric figure, described block 3 is uniformly distributed on described half tone matrix 1 region outside described back of the body silver electrode baffle plate 2 each other at a distance.
It should be noted that, the utility model, by arranging the block 3 that outline is regular geometric figure on described half tone matrix 1, while guarantee press quality, reduces aluminium paste consumption, reduces costs.
Preferably, the shape of described block 3 is regular polygon, ellipse or circular.
It should be noted that, described block 3 can be made into difformity according to the technological requirement of silicon chip, and in order to ensure the printing uniformity of aluminium paste, the shape of described block 3 can be regular polygon, ellipse or circular.
Preferably, the shape of described block 3 is circular, and its diameter is 0.1-5mm.
It should be noted that, the profile design of block 3 is become the half tone figure with a lot of circular gear point, circular gear point is full of the part of whole half tone matrix 1(except described back of the body silver electrode baffle plate 2 place), half tone matrix 1 is uniformly distributed.The diameter of these circular gear points is at 0.1 ~ 5mm, and aluminium paste can not through these circular gear point regions.It is low that aluminium paste due to photovoltaic industry use has viscosity, the feature of good fluidity, under the pressure of head is scraped in printing, aluminium paste is through after half tone, because inertia can keep off area of silicon wafer corresponding to point to circular by automatic flowing, what ensure aluminium paste uniformly continous is distributed on silicon chip, decreases aluminium paste consumption simultaneously, reduces costs.
Preferably, the shape of described back of the body silver electrode baffle plate 2 is corresponding with the shape of back of the body silver electrode, and the area of described back of the body silver electrode baffle plate 2 is greater than the area of back of the body silver electrode.
It should be noted that, because aluminium paste has mobility, in order to avoid aluminium paste is communicated with back of the body silver electrode, the area of described back of the body silver electrode baffle plate 2 should be greater than the area of back of the body silver electrode.
As shown in Figure 2, according to the utility model first embodiment, described half tone matrix 1 is mesh rhombus silk screen 4 of the same size.
It should be noted that, adopt the silk screen of diamond structure to be not easy distortion, printing good stability.
As shown in Figure 3, according to the utility model second embodiment, described half tone matrix 1 is the parallel silk screen 5 be made up of the net bar be parallel to each other tilted at a certain angle.
It should be noted that, the present embodiment adopts parallel screen net structure, and in order to improve stability, described net bar is thicker than the first embodiment, can reduce the consumption of aluminium paste to a certain extent further.
Preferably, described half tone matrix 1 is apart from the edge 0.5-1mm of silicon chip.
It should be noted that, in order to avoid polluting, should be avoided in the edge printing aluminium paste of silicon chip, therefore described half tone matrix 1 should apart from the edge 0.5-1mm of silicon chip.
Above disclosedly be only a kind of preferred embodiment of the utility model, certainly can not limit the interest field of the utility model with this, therefore according to the equivalent variations that the utility model claim is done, still belong to the scope that the utility model is contained.

Claims (7)

1. an aluminium back surface field half tone, is characterized in that, comprises the half tone matrix be made up of silk screen, and described half tone matrix is provided with the back of the body silver electrode baffle plate for hiding back of the body silver electrode; Described half tone matrix is also provided with the block that outline is regular geometric figure, and described block is uniformly distributed on the described half tone matrix region outside described back of the body silver electrode baffle plate each other at a distance.
2. aluminium back surface field half tone as claimed in claim 1, it is characterized in that, the shape of described block is regular polygon, ellipse or circular.
3. aluminium back surface field half tone as claimed in claim 1, is characterized in that, the shape of described block is circular, and its diameter is 0.1-5mm.
4. aluminium back surface field half tone as claimed in claim 1, is characterized in that, the shape of described back of the body silver electrode baffle plate is corresponding with the shape of back of the body silver electrode, and the area of described back of the body silver electrode baffle plate is greater than the area of back of the body silver electrode.
5. aluminium back surface field half tone as claimed in claim 1, it is characterized in that, described half tone matrix is mesh rhombus silk screen of the same size.
6. aluminium back surface field half tone as claimed in claim 1, it is characterized in that, described half tone matrix is the parallel silk screen be made up of the net bar be parallel to each other tilted at a certain angle.
7. aluminium back surface field half tone as claimed in claim 1, is characterized in that, the edge 0.5-1mm of described half tone matrix distance silicon chip.
CN201420473306.4U 2014-08-21 2014-08-21 A kind of aluminium back surface field half tone Active CN204109533U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201420473306.4U CN204109533U (en) 2014-08-21 2014-08-21 A kind of aluminium back surface field half tone

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201420473306.4U CN204109533U (en) 2014-08-21 2014-08-21 A kind of aluminium back surface field half tone

Publications (1)

Publication Number Publication Date
CN204109533U true CN204109533U (en) 2015-01-21

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Country Status (1)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109560145A (en) * 2018-12-30 2019-04-02 无锡赛晶太阳能有限公司 A kind of solar cell Al-BSF structure
CN109968799A (en) * 2019-04-29 2019-07-05 苏州腾晖光伏技术有限公司 Halftone and crystal silicon battery back electrode preparation method for crystal silicon battery back electrode
CN114220875A (en) * 2021-12-03 2022-03-22 苏州腾晖光伏技术有限公司 MWT battery back aluminum electrode and printing screen

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109560145A (en) * 2018-12-30 2019-04-02 无锡赛晶太阳能有限公司 A kind of solar cell Al-BSF structure
CN109968799A (en) * 2019-04-29 2019-07-05 苏州腾晖光伏技术有限公司 Halftone and crystal silicon battery back electrode preparation method for crystal silicon battery back electrode
CN114220875A (en) * 2021-12-03 2022-03-22 苏州腾晖光伏技术有限公司 MWT battery back aluminum electrode and printing screen

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Date Code Title Description
C14 Grant of patent or utility model
GR01 Patent grant
CP03 Change of name, title or address
CP03 Change of name, title or address

Address after: No. 69, C District, Sanshui Industrial Park, Sanshui, Foshan, Guangdong

Patentee after: GUANGDONG AIKO SOLAR ENERGY TECHNOLOGY Co.,Ltd.

Address before: 528100, Sanshui District, Guangdong City, Foshan Industrial Park, No. C District, No. 69

Patentee before: GUANGDONG AIKO SOLAR ENERGY TECHNOLOGY Co.,Ltd.

TR01 Transfer of patent right
TR01 Transfer of patent right

Effective date of registration: 20180207

Address after: No. 69, C District, Sanshui Industrial Park, Sanshui, Foshan, Guangdong

Co-patentee after: ZHEJIANG AIKO SOLAR ENERGY TECHNOLOGY Co.,Ltd.

Patentee after: GUANGDONG AIKO SOLAR ENERGY TECHNOLOGY Co.,Ltd.

Address before: No. 69, C District, Sanshui Industrial Park, Sanshui, Foshan, Guangdong

Patentee before: GUANGDONG AIKO SOLAR ENERGY TECHNOLOGY Co.,Ltd.