CN104802508A - Crystalline silicon solar cell anode screen board - Google Patents
Crystalline silicon solar cell anode screen board Download PDFInfo
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- CN104802508A CN104802508A CN201510224246.1A CN201510224246A CN104802508A CN 104802508 A CN104802508 A CN 104802508A CN 201510224246 A CN201510224246 A CN 201510224246A CN 104802508 A CN104802508 A CN 104802508A
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- positive electrode
- anode
- silicon solar
- half tone
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Abstract
The invention discloses a crystalline silicon solar cell anode screen board. The crystalline silicon solar cell anode screen board comprises a screen board base body composed of a silkscreen, and a latex film layer which is attached to the base body, wherein the latex film layer is provided with an anode pattern; the anode pattern consists of M anode main grids and N anode secondary grids; the anode main grids are wider than the anode secondary grids; the latex film layer at the opening of each anode secondary grid is provided with a protruding rib. Compared with the prior art, the crystalline silicon solar cell anode screen board disclosed by the invention is characterized in that the thickness of the latex film layer at the opening of the anode secondary grid is increased without increasing the amount of used latex; when silver slurry forms anode secondary grid lines on a silicon wafer at an open hole in the screen pattern, the height of the anode secondary grid line is greatly increased; the height to width ratio of the anode secondary grid line is increased; the conductivity of the electrode is improved but the light shielding area of the electrode is not increased, so the photoelectric transformation efficiency of a battery is improved.
Description
Technical field
The present invention relates to technical field of solar batteries, particularly relate to a kind of crystal silicon solar batteries positive electrode half tone.
Background technology
Solar cell is that one absorbs solar radiant energy effectively, utilize photovoltaic effect that luminous energy is converted to the device of electric energy, when solar irradiation is in semiconductor P-N junction (P-N Junction), form new hole-electron to (V-E pair), under the effect of P-N junction electric field, hole flows to P district by N district, and electronics flows to N district by P district, just forms electric current after connecting circuit.
The manufacturing process of crystal silicon solar batteries has 6 procedures, is respectively making herbs into wool, diffusion, dephosphorization silex glass and back of the body knot, plated film, serigraphy, sintering.Wherein serigraphy is used for manufacturing the electrode of solar cell, and it is divided into back electrode printing, and the printing of aluminium back surface field and positive electrode print three steps.Back electrode printing refers at cell backside printing silver slurry, forms back electrode, be used for collecting and conductive electric current after oven dry.The printing of aluminium back surface field refers at the printed portions aluminium paste of cell backside except back electrode and edge, forms aluminium back surface field after drying.Positive electrode printing refers at battery front side printing silver slurry, forms positive electrode main gate line and the secondary grid line of positive electrode, be used for collecting and conductive electric current after sintering.
Positive electrode printing adopts the mode of traditional silk-screened, and utilize printing machine and half tone to be printed onto on silicon chip by silver slurry, silver slurry forms positive electrode pattern by the tapping in half tone figure on silicon chip.Positive electrode pattern comprises main grid and secondary grid.The number of main grid is less than the number of secondary grid, and the width of main grid is much larger than the width of secondary grid, but the height of secondary grid is low, and silver slurry, when secondary grid form the secondary grid line of positive electrode, exists the shortcoming that the depth-width ratio photoelectric transformation efficiency that is less, battery of the secondary grid line of positive electrode is low.
Summary of the invention
Technical problem to be solved by this invention is, a kind of crystal silicon solar batteries positive electrode half tone being provided, when ensureing that latex film consumption increases little, the height of the secondary grid of positive electrode can being increased considerably, thus increase the depth-width ratio of the secondary grid line of positive electrode, improve the photoelectric transformation efficiency of battery.
In order to solve the problems of the technologies described above, the invention provides a kind of crystal silicon solar batteries positive electrode half tone, comprise the half tone matrix be made up of silk screen and the latex rete be attached on matrix, described latex rete is provided with positive electrode pattern; Positive electrode pattern is made up of M bar positive electrode main grid and the secondary grid of N bar positive electrode, and positive electrode main grid width is greater than the secondary grid width of positive electrode, and the latex rete of the secondary grid opening part of positive electrode is provided with protruding convex tendon.
As the improvement of such scheme, the latex rete of described positive electrode main grid opening part is also provided with protruding convex tendon.
As the improvement of such scheme, the thickness of described latex rete is 5 ~ 10 μm, and the height of convex tendon is 20 ~ 40 μm.
As the improvement of such scheme, described positive electrode main grid number: 1<M<10, the secondary grizzly bar number of positive electrode: 60<N<150.
As the improvement of such scheme, the width of described positive electrode main grid is 1 ~ 1.5mm, and the width of the secondary grid of positive electrode is 20 ~ 100 μm.
As the improvement of such scheme, described half tone matrix is mesh rhombus silk screen of the same size.
As the improvement of such scheme, described half tone matrix is intersect by two groups that tilt at a certain angle parallel net bars the rhombus silk screen formed.
Compared with prior art, the present invention is by changing the structure of latex rete, protruding convex tendon is provided with at the latex rete of the secondary grid opening part of positive electrode, when ensureing that latex consumption increases little, increase the thickness of latex rete at the secondary grid opening part of positive electrode, when silver slurry forms positive electrode pair grid line by the tapping in half tone figure on silicon chip, increase considerably the height of the secondary grid line of positive electrode, increase the depth-width ratio of the secondary grid line of positive electrode, have while raising electrode conductivity, do not increase the shading-area of electrode, thus improve the advantage of the photoelectric transformation efficiency of battery.
Accompanying drawing explanation
Fig. 1 is the structural representation of a kind of crystal silicon solar batteries positive electrode of the present invention half tone;
Fig. 2 is A-A place sectional view in Fig. 1;
Fig. 3 is B-B place sectional view in Fig. 1;
Fig. 4 is the structural representation of half tone matrix of the present invention.
Detailed description of the invention
For making the object, technical solutions and advantages of the present invention clearly, below in conjunction with accompanying drawing, the present invention is described in further detail.
As shown in Figures 1 to 4, embodiments provide a kind of crystal silicon solar batteries positive electrode half tone, comprise the half tone matrix 1 be made up of silk screen and the latex rete 2 be attached on matrix, latex rete 2 is provided with positive electrode pattern; Positive electrode pattern is made up of 1 to 10 positive electrode main grid 3 and 60 to 150 secondary grid 4 of positive electrode, and positive electrode main grid 3 width is greater than the secondary grid width 4 of positive electrode, and the latex rete 2 of positive electrode main grid 3 and secondary grid 4 opening part of positive electrode is equipped with protruding convex tendon 21.
The thickness of latex rete 2 is 5 ~ 10 μm, and the height of convex tendon 21 is 20 ~ 40 μm; The number of positive electrode main grid 3: 1<M<10, the number of the secondary grid 4 of positive electrode: 60<N<150; The width of positive electrode main grid 3 is 1 ~ 1.5mm, and the width of the secondary grid 4 of positive electrode is 20 ~ 100 μm.
Half tone matrix 1 is in the same size and two groups that tilt at a certain angle parallel net bars intersect the rhombus silk screen formed by mesh.The silk screen of diamond structure is adopted to be not easy distortion, printing good stability.
Compared with prior art, the present invention is by changing the structure of latex rete, protruding convex tendon 21 is provided with at the latex rete 2 of secondary grid 4 opening part of positive electrode, when ensureing that latex consumption increases little, increase the thickness of latex rete 2 at secondary grid 4 opening part of positive electrode, when silver slurry forms positive electrode pair grid line by the tapping in half tone figure on silicon chip, increase considerably the height of the secondary grid line of positive electrode, increase the depth-width ratio of the secondary grid line of positive electrode, have while raising electrode conductivity, do not increase the shading-area of electrode, thus improve the advantage of the photoelectric transformation efficiency of battery.
It should be noted that, the latex rete 2 of positive electrode main grid 3 opening part is also provided with protruding convex tendon 21, also the height of positive electrode main gate line can be increased considerably, increase the depth-width ratio of positive electrode main gate line, have while raising electrode conductivity, do not increase the shading-area of electrode, thus improve the advantage of the photoelectric transformation efficiency of battery.
Above disclosedly be only a kind of preferred embodiment of the present invention, certainly can not limit the interest field of the present invention with this, therefore according to the equivalent variations that the claims in the present invention are done, still belong to the scope that the present invention is contained.
Claims (7)
1. a crystal silicon solar batteries positive electrode half tone, is characterized in that, comprise the half tone matrix be made up of silk screen and the latex rete be attached on matrix, described latex rete is provided with positive electrode pattern; Positive electrode pattern is made up of M bar positive electrode main grid and the secondary grid of N bar positive electrode, and positive electrode main grid width is greater than the secondary grid width of positive electrode, and the latex rete of the secondary grid opening part of positive electrode is provided with protruding convex tendon.
2. a kind of crystal silicon solar batteries positive electrode half tone as claimed in claim 1, is characterized in that, the latex rete of described positive electrode main grid opening part is also provided with protruding convex tendon.
3. a kind of crystal silicon solar batteries positive electrode half tone as claimed in claim 1, is characterized in that, the thickness of described latex rete is 5 ~ 10 μm, and the height of convex tendon is 20 ~ 40 μm.
4. a kind of crystal silicon solar batteries positive electrode half tone as claimed in claim 1, it is characterized in that, described positive electrode main grid number: 1<M<10, the secondary grizzly bar number of positive electrode: 60<N<150.
5. a kind of crystal silicon solar batteries positive electrode half tone as claimed in claim 1, is characterized in that, the width of described positive electrode main grid is 1 ~ 1.5mm, and the width of the secondary grid of positive electrode is 20 ~ 100 μm.
6. a kind of crystal silicon solar batteries positive electrode half tone as claimed in claim 1, is characterized in that, described half tone matrix is mesh rhombus silk screen of the same size.
7. a kind of crystal silicon solar batteries positive electrode half tone as claimed in claim 1, is characterized in that, described half tone matrix is intersect by two groups that tilt at a certain angle parallel net bars the rhombus silk screen formed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510224246.1A CN104802508A (en) | 2015-05-05 | 2015-05-05 | Crystalline silicon solar cell anode screen board |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510224246.1A CN104802508A (en) | 2015-05-05 | 2015-05-05 | Crystalline silicon solar cell anode screen board |
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| CN104802508A true CN104802508A (en) | 2015-07-29 |
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| CN201510224246.1A Pending CN104802508A (en) | 2015-05-05 | 2015-05-05 | Crystalline silicon solar cell anode screen board |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105977346A (en) * | 2016-07-12 | 2016-09-28 | 广东爱康太阳能科技有限公司 | Crystalline silicon solar battery positive electrode screen printing plate |
| CN108615791A (en) * | 2018-04-20 | 2018-10-02 | 昆山乐邦印刷器材设备有限公司 | A kind of ladder film thickness halftone and preparation method thereof |
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| CN203752663U (en) * | 2013-10-29 | 2014-08-06 | 宁夏银星能源股份有限公司 | Solar cell front electrode screen printing plate |
| CN204077044U (en) * | 2014-08-26 | 2015-01-07 | 昆山良品丝印器材有限公司 | A kind of high-efficiency photovoltaic crystalline silicon printing resistance dense-grid composite halftone |
| CN204659171U (en) * | 2015-05-05 | 2015-09-23 | 广东爱康太阳能科技有限公司 | A kind of crystal silicon solar batteries positive electrode half tone |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JPH07254778A (en) * | 1994-03-16 | 1995-10-03 | Hitachi Ltd | Cream solder printing method of surface packaged printed wiring board |
| CN102267302A (en) * | 2010-05-19 | 2011-12-07 | 加卢斯费迪南德吕施股份公司 | Two-dimensional screen material and screen |
| CN103042818A (en) * | 2011-10-17 | 2013-04-17 | 正中科技股份有限公司 | Screen printing plate structure |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105977346A (en) * | 2016-07-12 | 2016-09-28 | 广东爱康太阳能科技有限公司 | Crystalline silicon solar battery positive electrode screen printing plate |
| CN108615791A (en) * | 2018-04-20 | 2018-10-02 | 昆山乐邦印刷器材设备有限公司 | A kind of ladder film thickness halftone and preparation method thereof |
| CN108615791B (en) * | 2018-04-20 | 2020-01-03 | 昆山乐邦印刷器材设备有限公司 | Step film thickness screen printing plate and preparation method thereof |
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Application publication date: 20150729 |