CN205920985U - Positive electrode network version of brilliant silicon solar cell - Google Patents

Positive electrode network version of brilliant silicon solar cell Download PDF

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Publication number
CN205920985U
CN205920985U CN201620736386.7U CN201620736386U CN205920985U CN 205920985 U CN205920985 U CN 205920985U CN 201620736386 U CN201620736386 U CN 201620736386U CN 205920985 U CN205920985 U CN 205920985U
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China
Prior art keywords
anelectrode
silicon solar
yarn
grid line
yarns
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CN201620736386.7U
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Chinese (zh)
Inventor
方结彬
秦崇德
石强
黄玉平
何达能
陈刚
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Zhejiang Aiko Solar Energy Technology Co Ltd
Guangdong Aiko Solar Energy Technology Co Ltd
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Guangdong Aiko Solar Energy Technology Co Ltd
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Priority to CN201620736386.7U priority Critical patent/CN205920985U/en
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    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50Manufacturing or production processes characterised by the final manufactured product

Abstract

The utility model discloses a positive electrode network version of brilliant silicon solar cell belongs to solar cell technical field, including screen frame, a plurality of grenadines of setting on the screen frame, the coating has the latex rete on the grenadine, is equipped with positive pattern of electrode on the latex rete, and positive pattern of electrode includes a plurality of crossing main grid lines and vice grid line, the grenadine includes a plurality of perpendicular yarns that intersect vertically and horizontal yarn, and each erects yarn parallel equidistant arranging on the screen frame in proper order, and each horizontal yarn is parallel equidistant arranging on the screen frame in proper order, and the interval of adjacent two perpendicular yarns is the same with adjacent two horizontal yarn intervals, main grid line parallel arrangement is between adjacent two horizontal yarns, and vice grid line parallel arrangement erects between the yarns adjacent two, the main grid line small in quantity in vice bars line number volume. The positive electrode network version of this solar cell can improve the photoelectric conversion efficiency of battery when improving the electrode conductivity, and can reduce the disconnected bars proportion of EL of vice bars simultaneously, improves the outward appearance qualification rate of battery.

Description

A kind of crystal silicon solar batteries anelectrode half tone
Technical field
This utility model is related to a kind of anelectrode half tone and in particular to a kind of crystal silicon solar batteries anelectrode half tone, belongs to In technical field of solar batteries.
Background technology
Solaode is that one kind effectively absorbs solar radiant energy, converts optical energy into electric energy using photovoltaic effect Device, when solar irradiation is on semiconductor p-n junctions (p-n junction), form new hole-electron to (v-e pair), In the presence of p-n junction electric field, hole flows to p area by n area, and electronics flows to n area by p area, is formed for electric current after connecting circuit.
The manufacturing process of crystal silicon solar batteries has 6 procedures, respectively making herbs into wool, diffusion, goes phosphorosilicate glass and back of the body knot, plating Film, silk screen printing, sintering.Wherein silk screen printing is used for manufacturing the electrode of solaode, and it is divided into back electrode to print, aluminum back surface field Printing and anelectrode print three steps.Back electrode printing refers to print silver paste in cell backside, forms back electrode after drying, uses To collect and to conduct electric current.The printing of aluminum back surface field refers to the printed portions aluminium paste in addition to back electrode and edge in cell backside, Form aluminum back surface field after drying.Anelectrode printing refers to print silver paste in battery front side, forms anelectrode main gate line and just after sintering Electrode pair grid line, for collecting and conducting electric current.
Anelectrode prints by the way of traditional silk-screened, using printer and half tone, silver paste is printed onto on silicon chip, The tapping that silver paste is passed through in half tone figure forms anelectrode pattern on silicon chip.Anelectrode pattern includes main grid and secondary grid.Main The bar number of grid is less than the bar number of secondary grid, and the width of main grid is much larger than the width of secondary grid, but the height of secondary grid can not arrange too low, wide Degree can not arrange too small, silver paste when secondary grid form anelectrode pair grid line, exist anelectrode pair grid line depth-width ratio is less, battery The low shortcoming of photoelectric transformation efficiency.
Utility model content
The problem existing for above-mentioned prior art, this utility model provides a kind of crystal silicon solar batteries positive electricity polar net Version, can increase the depth-width ratio of anelectrode pair grid line, improve the photoelectric transformation efficiency of battery, can reduce the disconnected grid ratio of el of secondary grid simultaneously Example, improves the appearance yield of battery.
To achieve these goals, a kind of crystal silicon solar batteries anelectrode half tone that this utility model adopts, including net Frame, some grenadines being arranged on screen frame, described grenadine is coated with latex film layer, and described latex film layer is provided with positive electricity pole figure Case, described anelectrode pattern includes some intersecting main gate line and secondary grid line;
Described grenadine includes some perpendicular yarns intersecting vertically and horizontal yarn, and each perpendicular yarn is parallel successively to be equally spaced On screen frame, each horizontal yarn is parallel successively to be equally spaced on screen frame, and the spacing of adjacent two perpendicular yarns and adjacent two horizontal yarns Spacing is identical;
Described main gate line is set in parallel between adjacent two horizontal yarns, and described pair grid line is set in parallel in adjacent two perpendicular yarns Between, the quantity of described main gate line is less than described pair grid line quantity.
As improvement, each main gate line is set in parallel in two horizontal yarn centers respectively.
As improvement, each pair grid line is set in parallel in two perpendicular yarn center respectively.
As improvement, a diameter of 15-30 μm of described perpendicular yarn, a diameter of 15-30 μm of described horizontal yarn.
As improvement, the thickness of described latex film layer is 5-30 μm.
As improvement, the bar number of described main gate line is 1 < m < 8.
As improvement, the bar number of described pair grid line is 80 < n < 200.
As improvement, the width of described pair grid line is 15-80 μm.
As improvement, the width of described main gate line is 0.5-1.5mm.
Compared with prior art, this utility model passes through to change the angle of intersection of grenadine, by 22.5 ° intersect of conventional screen Angle, is changed into 90 ° of right angle, makes the net knot not having silk thread to be wound around in the secondary grid fluting of anelectrode pattern, increases the strike through of half tone Property.This solaode anelectrode half tone, by increasing the thickness of latex film and the width reducing anelectrode pair grid line pattern, with Increasing the depth-width ratio of anelectrode pair grid line, can not increasing the shading-area of electrode, thus carrying while improving electrode conductivity The photoelectric transformation efficiency of high battery, and the disconnected grid ratio of the el of secondary grid can be reduced simultaneously, improve the appearance yield of battery.
Brief description
Fig. 1 is structural representation of the present utility model;
In figure: 1, screen frame, 2, grenadine, 21, perpendicular yarn, 22, horizontal yarn, 3, secondary grid line, 4, main gate line.
Specific embodiment
For making the purpose of this utility model, technical scheme and advantage of greater clarity, below by drawings and Examples, This utility model is further elaborated.However, it should be understood that specific embodiment described herein is only in order to solve Release this utility model, be not limited to scope of the present utility model.
Unless otherwise defined, all of technical term used herein and scientific terminology with belong to skill of the present utility model The implication that the technical staff in art field is generally understood that is identical, herein in term used in the description of the present utility model only Be in order to the purpose of specific embodiment is described it is not intended that in limit this utility model.
As shown in figure 1, a kind of crystal silicon solar batteries anelectrode half tone, including screen frame 1, be arranged on some on screen frame 1 Grenadine 2, described grenadine 2 is coated with latex film layer, and described latex film layer is provided with anelectrode pattern, described anelectrode pattern bag Include some intersecting main gate line 4 and secondary grid line 3;
Described grenadine 2 includes some perpendicular yarns 21 intersecting vertically and horizontal yarn 22, and each perpendicular yarn 21 is successively between parallel grade Away from being arranged on screen frame 1, each horizontal yarn 22 is parallel successively to be equally spaced on screen frame 1, and the spacing of adjacent two perpendicular yarns 21 Identical with adjacent two horizontal yarn 22 spacing;
Described main gate line 4 is set in parallel between adjacent two horizontal yarns 22, and described pair grid line 3 is set in parallel in adjacent two and erects Between yarn 21, the quantity of described main gate line 4 is less than described pair grid line 3 quantity.
As the improvement of embodiment, each main gate line 4 is set in parallel in two horizontal yarn 22 center respectively, and main gate line 4 is away from adjacent The spacing of two horizontal yarns 22 is identical, and reasonable in design can effectively improve the photoelectric transformation efficiency of battery.
As the improvement of embodiment, each pair grid line 3 is set in parallel in two perpendicular yarn 21 centers respectively, and secondary grid line 3 is away from adjacent The spacing of two perpendicular yarns 21 is identical.
As the improvement of embodiment, a diameter of 15-30 μm of described perpendicular yarn 21, a diameter of 15- of described horizontal yarn 22 30μm.
As the improvement of embodiment, the thickness of described latex film layer is 5-30 μm, and the thickness using latex film layer can be 5 μ M, 10 μm, 15 μm, 30 μm, can flexibly select the thickness of latex film layer in production as needed.
As the improvement of embodiment, the bar number of described main gate line 4 is 1 < m < 8, and the bar number of secondary grid line 3 is 80 < n < 200.
As the improvement of embodiment, the width of described pair grid line 3 is 15-80 μm, and the width of main gate line 4 is 0.5-1.5mm. The width of major and minor grid line can flexibly be selected as needed in production.
This utility model passes through to change the angle of intersection of grenadine, by 22.5 ° of angle of intersection of conventional screen, is changed into 90 ° Right angle, makes the net knot not having silk thread to be wound around in the secondary grid fluting of anelectrode pattern, increases the strike through of half tone.This solaode Anelectrode half tone, by increasing the thickness of latex film and the width reducing anelectrode pair grid line pattern, to increase anelectrode pair grid The depth-width ratio of line, can not increase the shading-area of electrode, thus the photoelectricity improving battery turns while improving electrode conductivity Change efficiency, and the disconnected grid ratio of the el of secondary grid can be reduced simultaneously, improve the appearance yield of battery.
The foregoing is only preferred embodiment of the present utility model, not in order to limit this utility model, all this Any modification, equivalent or improvement made within the spirit of utility model and principle etc., should be included in this utility model Protection domain within.

Claims (9)

1. a kind of crystal silicon solar batteries anelectrode half tone it is characterised in that include screen frame (1), be arranged on screen frame (1) if on Dry grenadine (2), described grenadine (2) is coated with latex film layer, and described latex film layer is provided with anelectrode pattern, described anelectrode Pattern includes some intersecting main gate line (4) and secondary grid line (3);
Described grenadine (2) includes some perpendicular yarns (21) intersecting vertically and horizontal yarn (22), and each perpendicular yarn (21) is parallel successively It is equally spaced on screen frame (1), each horizontal yarn (22) is parallel successively to be equally spaced on screen frame (1), and adjacent two perpendicular yarns The spacing of line (21) is identical with adjacent two horizontal yarns (22) spacing;
Described main gate line (4) is set in parallel between adjacent two horizontal yarns (22), and described pair grid line (3) is set in parallel in adjacent two Between perpendicular yarn (21), the quantity of described main gate line (4) is less than described pair grid line (3) quantity.
2. a kind of crystal silicon solar batteries anelectrode half tone according to claim 1 is it is characterised in that each main gate line (4) It is set in parallel in two horizontal yarns (22) center respectively.
3. a kind of crystal silicon solar batteries anelectrode half tone according to claim 1 it is characterised in that each pair grid line (3) It is set in parallel in two perpendicular yarn (21) centers respectively.
4. a kind of crystal silicon solar batteries anelectrode half tone according to claim 1 is it is characterised in that described perpendicular yarn (21) a diameter of 15-30 μm, a diameter of 15-30 μm of described horizontal yarn (22).
5. a kind of crystal silicon solar batteries anelectrode half tone according to claim 1 is it is characterised in that described latex film layer Thickness be 5-30 μm.
6. a kind of crystal silicon solar batteries anelectrode half tone according to claim 1 is it is characterised in that described main gate line (4) bar number is 1 < m < 8.
7. a kind of crystal silicon solar batteries anelectrode half tone according to claim 1 it is characterised in that described pair grid line (3) bar number is 80 < n < 200.
8. a kind of crystal silicon solar batteries anelectrode half tone according to claim 1 it is characterised in that described pair grid line (3) width is 15-80 μm.
9. a kind of crystal silicon solar batteries anelectrode half tone according to claim 1 is it is characterised in that described main gate line (4) width is 0.5-1.5mm.
CN201620736386.7U 2016-07-12 2016-07-12 Positive electrode network version of brilliant silicon solar cell Active CN205920985U (en)

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Application Number Priority Date Filing Date Title
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105977346A (en) * 2016-07-12 2016-09-28 广东爱康太阳能科技有限公司 Crystalline silicon solar battery positive electrode screen printing plate
CN108162573A (en) * 2017-12-21 2018-06-15 中建材浚鑫科技有限公司 A kind of solar cell printing is with without net netting version

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105977346A (en) * 2016-07-12 2016-09-28 广东爱康太阳能科技有限公司 Crystalline silicon solar battery positive electrode screen printing plate
CN108162573A (en) * 2017-12-21 2018-06-15 中建材浚鑫科技有限公司 A kind of solar cell printing is with without net netting version

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CP01 Change in the name or title of a patent holder
CP01 Change in the name or title of a patent holder

Address after: 528100, Sanshui District, Guangdong City, Foshan Industrial Park, No. C District, No. 69

Patentee after: GUANGDONG AIKO SOLAR ENERGY TECHNOLOGY Co.,Ltd.

Address before: 528100, Sanshui District, Guangdong City, Foshan Industrial Park, No. C District, No. 69

Patentee before: GUANGDONG AIKO SOLAR ENERGY TECHNOLOGY Co.,Ltd.

TR01 Transfer of patent right
TR01 Transfer of patent right

Effective date of registration: 20180105

Address after: 528100, Sanshui District, Guangdong City, Foshan Industrial Park, No. C District, No. 69

Co-patentee after: ZHEJIANG AIKO SOLAR ENERGY TECHNOLOGY Co.,Ltd.

Patentee after: GUANGDONG AIKO SOLAR ENERGY TECHNOLOGY Co.,Ltd.

Address before: 528100, Sanshui District, Guangdong City, Foshan Industrial Park, No. C District, No. 69

Patentee before: GUANGDONG AIKO SOLAR ENERGY TECHNOLOGY Co.,Ltd.