CN105564065A - N-type solar energy cell secondary silk-screen printing method - Google Patents
N-type solar energy cell secondary silk-screen printing method Download PDFInfo
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- CN105564065A CN105564065A CN201410525470.XA CN201410525470A CN105564065A CN 105564065 A CN105564065 A CN 105564065A CN 201410525470 A CN201410525470 A CN 201410525470A CN 105564065 A CN105564065 A CN 105564065A
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Abstract
The invention relates to an N-type solar energy cell secondary silk-screen printing method comprising steps of (1) printing a first auxiliary grid and a main grid on an N-type silicon chip via silver slurry through a first silk screen, (2) printing a second auxiliary grid on the first auxiliary grid via silver slurry through a second silk screen, and (3) drying the well-printed N-type silicon chips via a baking device and sintering the same to acquire the N-type solar energy cell. The width of an auxiliary grid line of the second auxiliary grid is no larger than the width of an auxiliary grid line of the first auxiliary grid. Compared with the prior art, grid lines are printed for twice via the same or different slurry; the grid lines have different widths; contact performance of the grid lines and the silicon chips can be guaranteed and conductivity performance of the grid lines can be ensured; light shielding area of the grid lines can be reduced; and photoelectric conversion efficiency of the battery can be improved.
Description
Technical field
The present invention relates to technical field of solar batteries, especially relate to N-type solar cell secondary method for printing screen.
Background technology
The main purpose of N-type solar battery technology research obtains the photoelectric transformation efficiency higher compared with conventional P-type battery.As the main flow classification of in N-type solar cell, the photoelectric transformation efficiency of N-type solar cell comparatively exceeds more than 0.4% (absolute value) with the conventional solar cell lifting of P type of size.Have benefited from the carrier lifetime that it is longer, its photo attenuation phenomenon also will the conventional solar cell of P type comparatively with size much little.Restrict by quality of materials although N-type solar cell is the same with conventional P-type solar battery structure, the combination of itself and all back-contact electrodes structure can make its photoelectric transformation efficiency significantly improve.N-type solar cell is the very promising high performance solar batteries structure of one.
Bury the new technology such as contact, IBC, PERL be proved the lifting that effectively can bring electrical property to N-type solar cell as various types of back of the body passivation, positive electrode in current crystal silicon battery technology.But many new technologies wherein due to technological process comparatively complicated, and cost is higher, is difficult to large area at present and realizes volume production.The starting point promoting photoelectric transformation efficiency mainly obtains larger short circuit current, the main potential place that silk-screen process has just become battery efficiency to improve further between the sensitive surface increasing battery surface.The secondary grid width being specially minimizing metallic electrode, to reduce shading loss, coordinates the silver of high conductivity slurry and rational sintering process to reduce the heat producing losses in electric current conductive process simultaneously.In this process, the loss of the cross-sectional sizes that the secondary grid narrowed bring directly can cause the reduction of fill factor, curve factor.Photoetching coordinates the technology of burying this optimal anchor direction can be accomplished ultimate attainment in theory, but this can bring the loss on expensive time and cost simultaneously.So the N-type solar battery efficiency lifting scheme that secondary silk screen has just become an operation simultaneously with low cost easily to realize.
Summary of the invention
Object of the present invention is exactly the defect existed to overcome above-mentioned prior art, by adopting two printing grid lines, use identical slurry printing, the grid line width of printing is different, on the basis of electric conductivity ensureing grid line and silicon chip contact performance and grid line, reduce the shading-area of grid line, improve the photoelectric transformation efficiency of battery.
Object of the present invention can be achieved through the following technical solutions:
N-type solar cell secondary method for printing screen, adopts following steps:
(1) the first silk screen and silver slurry is adopted to print the first secondary grid and main grid in N-type silicon chip;
(2) adopt the second silk screen and silver slurry printing the second secondary grid on the secondary grid of ground floor, the secondary grid line width of the second secondary grid is not more than the secondary grid line width of the first secondary grid;
(3) N-type silicon chip printed is put into apparatus for baking to carry out drying and sintering, namely printing obtains this novel N-type solar cell.
The first described silk screen comprises the pattern of the secondary grid of printing first and main grid.
As preferred embodiment, the secondary grid line width in the first secondary gate pattern is 30-55 micron, and the main gate line width in main grid pattern is 1-1.5 millimeter.
As the embodiment be more preferably, main grid pattern can also adjust the pattern of main gate line according to print request, such as, can adopt segmental structure, carries out the variation on pattern according to the details of printing.
As preferred embodiment, the secondary grid line width in the second secondary grid is 25-50 micron, it should be noted that the width of the secondary grid line in the second secondary grid is not more than the width of the secondary grid line in the first secondary grid when applying.
The method is used for the front of N-type solar cell or the grid line printing at the back side, can also carry out grid line printing to the tow sides of N-type solar cell simultaneously.Identical slurry is used twice printing.
Compared with prior art, the grid line of the N-type solar battery sheet that the present invention adopts this secondary silk-screening approach to print, wherein, adopt the first silk screen and silver slurry in N-type silicon chip, print the secondary grid of ground floor and main grid, because silver slurry is good with the contact performance of silicon chip, after sintering, silver slurry forms good Ohmic contact with silicon chip, thus ensure that good the contacting at secondary grid and main grid and cell piece front or the back side; Adopt the second silk screen and silver slurry in this N-type silicon chip, print the secondary grid of the second layer, because the secondary grid of the second layer are formed in above the first secondary grid, and the secondary grid line width of the secondary grid of the second layer is not more than the secondary grid line width of the secondary grid of ground floor, thus reduce the shading-area of the secondary grid line of whole piece, improve the quantity of photo-generated carrier; Increase the total height of secondary grid line simultaneously, improve the conversion efficiency of cell piece.Further, adopt this secondary printing method, above the secondary grid of ground floor, print the secondary grid of the second layer, greatly reduce the situation that print in printing process is empty, break, improve printing effect, further increase the conversion efficiency of battery.
Accompanying drawing explanation
Fig. 1 is the structural representation of the first silk screen;
Fig. 2 is the structural representation of the second silk screen.
Detailed description of the invention
Below in conjunction with the drawings and specific embodiments, the present invention is described in detail.
Embodiment 1
Accompanying drawing 1 is the first silk-screen patterns example, wherein horizontal distribution, and parallel each other and relatively thin is secondary grid line, and width is 30 ~ 55 microns.Vertical distribution, parallel each other and relatively thick is main gate line, and width is 1-1.5 millimeter, and main grid design can carry out details pattern change (as segmentation, hollow out etc.), but does not affect width that widest part divides in 1-1.5 millimeter scope.Accompanying drawing 2 is the second silk screen pattern, and secondary grid line width distribution is consistent in accompanying drawing 1, width setting 25 ~ 50 millimeters, and in same group of the first silk screen and the second silk screen matched group, the secondary grid width of the second silk screen is not more than the secondary grid width of the first silk screen.Adopt the first silk screen and silver slurry in this N-type silicon chip, print the secondary grid of ground floor and main grid during operation, adopt the second silk screen and silver slurry in this N-type silicon chip, print the secondary grid of the second layer, and this secondary silk-screening approach can be used for printing one side N-type solar cell, the front of N-type double-side cell or the back side, or the front and back being simultaneously applied to N-type double-side cell.
Embodiment 2
N-type solar cell secondary method for printing screen, adopts following steps:
(1) the first silk screen and silver slurry is adopted to print the first secondary grid and main grid in N-type silicon chip, the first silk screen used comprises the pattern of the secondary grid of printing first and main grid, wherein, secondary grid line width in first secondary gate pattern is 30 microns, main gate line width in main grid pattern is 1 millimeter, and in addition, main grid pattern can also adjust the pattern of main gate line according to print request, such as can adopt segmental structure, carry out the variation on pattern according to the details of printing;
(2) adopt the second silk screen and silver slurry printing the second secondary grid on the secondary grid of ground floor, the secondary grid line width of the second secondary grid is not more than the secondary grid line width of the first secondary grid, and in the present embodiment, the secondary grid line width in the second secondary grid is 25 microns;
(3) N-type silicon chip printed is put into apparatus for baking to carry out drying and sintering, namely printing obtains this novel N-type solar cell.
Said method is utilized to carry out grid line printing in the front of N-type solar cell or the back side, identical slurry is used twice printing, the secondary grid of the second layer are printed above the secondary grid of ground floor, greatly reduce the situation that print in printing process is empty, break, improve printing effect, further increase the conversion efficiency of battery.
Embodiment 3
N-type solar cell secondary method for printing screen, adopts following steps:
(1) the first silk screen and silver slurry is adopted to print the first secondary grid and main grid in N-type silicon chip, the first silk screen used comprises the pattern of the secondary grid of printing first and main grid, wherein, secondary grid line width in first secondary gate pattern is 45 microns, main gate line width in main grid pattern is 1.4 millimeters, and in addition, main grid pattern can also adjust the pattern of main gate line according to print request, such as can adopt segmental structure, carry out the variation on pattern according to the details of printing;
(2) adopt the second silk screen and silver slurry printing the second secondary grid on the secondary grid of ground floor, the secondary grid line width of the second secondary grid is not more than the secondary grid line width of the first secondary grid, and in the present embodiment, the secondary grid line width in the second secondary grid is 40 microns;
(3) N-type silicon chip printed is put into apparatus for baking to carry out drying and sintering, namely printing obtains this novel N-type solar cell.
Said method is utilized to carry out grid line printing in the front of N-type solar cell or the back side, identical slurry is used twice printing, the secondary grid of the second layer are printed above the secondary grid of ground floor, greatly reduce the situation that print in printing process is empty, break, improve printing effect, further increase the conversion efficiency of battery.Specific experiment electrical performance data is see table 1.
Table 1
Experimental data confirms: N-type solar cell is under above-mentioned secondary printing technique, the cross-sectional area brought between better secondary grid line width control system and better secondary grid line height promotes, comparatively single is printed with better short circuit current Isc and fill factor, curve factor FF and shows, and final photoelectric transformation efficiency EFF is lifted at more than 0.15% (absolute value).
Claims (10)
1.N type solar cell secondary method for printing screen, is characterized in that, adopts following steps:
(1) the first silk screen is adopted to utilize silver slurry in N-type silicon chip, print out the first secondary grid and main grid;
(2) adopt the second silk screen to utilize silver slurry to print out the second secondary grid on the secondary grid of ground floor, the secondary grid line width of the second secondary grid is not more than the secondary grid line width of the first secondary grid;
(3) N-type silicon chip printed is put into apparatus for baking to carry out drying and sintering, namely complete the metallization of N-type solar cell.
2. a kind of N-type solar cell secondary method for printing screen according to claim 1, it is characterized in that, the first described silk screen comprises the pattern of the secondary grid of printing first and main grid.
3. a kind of N-type solar cell secondary method for printing screen according to claim 2, it is characterized in that, the secondary grid line width in the first secondary gate pattern is 30-55 micron.
4. a kind of N-type solar cell secondary method for printing screen according to claim 2, it is characterized in that, the main gate line width in main grid pattern is 1-1.5 millimeter.
5. a kind of N-type solar cell secondary method for printing screen according to claim 2, is characterized in that, main grid pattern can also adjust the concrete pattern of main gate line according to print request.
6. a kind of N-type solar cell secondary method for printing screen according to claim 5, is characterized in that, the main gate line in main grid pattern adopts segmental structure.
7. a kind of N-type solar cell secondary method for printing screen according to claim 1, it is characterized in that, the secondary grid line width in the second secondary grid is 25-50 micron.
8. a kind of N-type solar cell secondary method for printing screen according to claim 1, is characterized in that, the method is used for the front of N-type solar cell or the grid line printing at the back side.
9. a kind of N-type solar cell secondary method for printing screen according to claim 1, is characterized in that, the method is used for the double-edged grid line printing of N-type solar cell.
10. a kind of N-type solar cell secondary method for printing screen according to any one of claim 1-9, it is characterized in that, twice printing uses identical or different slurry.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201410525470.XA CN105564065A (en) | 2014-10-08 | 2014-10-08 | N-type solar energy cell secondary silk-screen printing method |
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| CN201410525470.XA CN105564065A (en) | 2014-10-08 | 2014-10-08 | N-type solar energy cell secondary silk-screen printing method |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN106206821A (en) * | 2016-08-30 | 2016-12-07 | 通威太阳能（合肥）有限公司 | A kind of twice print structure reducing shading lifting depth-width ratio |
| CN107146825A (en) * | 2017-06-22 | 2017-09-08 | 通威太阳能（合肥）有限公司 | Method for step-by-step printing of polycrystalline cell piece and step-by-step printing of polycrystalline cell piece |
| CN110690299A (en) * | 2019-10-21 | 2020-01-14 | 华南理工大学 | Photovoltaic solar cell electrode grid line in-situ secondary printing device and method |
| WO2021147238A1 (en) * | 2020-01-21 | 2021-07-29 | 宁夏隆基乐叶科技有限公司 | Solar cell screen printing mesh plate and manufacturing method for solar cell |
| WO2022142054A1 (en) * | 2020-12-28 | 2022-07-07 | 正泰新能科技有限公司 | Back metal electrode of n-type topcon solar cell and preparation method therefor, and cell |
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| CN107146825A (en) * | 2017-06-22 | 2017-09-08 | 通威太阳能（合肥）有限公司 | Method for step-by-step printing of polycrystalline cell piece and step-by-step printing of polycrystalline cell piece |
| CN110690299A (en) * | 2019-10-21 | 2020-01-14 | 华南理工大学 | Photovoltaic solar cell electrode grid line in-situ secondary printing device and method |
| WO2021147238A1 (en) * | 2020-01-21 | 2021-07-29 | 宁夏隆基乐叶科技有限公司 | Solar cell screen printing mesh plate and manufacturing method for solar cell |
| WO2022142054A1 (en) * | 2020-12-28 | 2022-07-07 | 正泰新能科技有限公司 | Back metal electrode of n-type topcon solar cell and preparation method therefor, and cell |
| EP4235807A4 (en) * | 2020-12-28 | 2024-02-21 | Chint New Energy Tech Co Ltd | Back metal electrode of n-type topcon solar cell and preparation method therefor, and cell |
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Application publication date: 20160511 |