CN102810580A - Screen printing plate type fine grid line cell - Google Patents
Screen printing plate type fine grid line cell Download PDFInfo
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- CN102810580A CN102810580A CN 201210316767 CN201210316767A CN102810580A CN 102810580 A CN102810580 A CN 102810580A CN 201210316767 CN201210316767 CN 201210316767 CN 201210316767 A CN201210316767 A CN 201210316767A CN 102810580 A CN102810580 A CN 102810580A
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- grid line
- fine grid
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Abstract
The invention relates to a screen printing plate type fine grid line cell which comprises a cell substrate. An irradiated face of the cell substrate is provided with a plurality of parallel fine grid lines and at least three main grid lines perpendicular to the fine grid lines, wherein the distance between each two adjacent fine grid lines is 5-8 micrometers, the width of each fine grid line is 60-90 micrometers, and the width of each main grid line is 1000-1500 micrometers. The screen printing plate type fine grid line cell has the advantages that cell efficiency can be effectively improved as the width of each fine grid line is 60-90 micrometers; and since the number of the fine grid lines is increased to 50-80, current transmission distance on a silicon chip can be effectively shortened while loss is reduced, surface dosage concentration of substrate materials is reduced, composition of impurities is reduced, and conversion efficiency of the crystalline silicon cell can be greatly improved.
Description
Technical field
The present invention relates to the field of solar battery sheet, the thin grid line battery of especially a kind of half tone type.
Background technology
The crystal-silicon solar cell of suitability for industrialized production; Adopt silk screen printing sintering silver conductor as top electrode, be commonly referred to as front gate line, as the important production technology of solar cell; The screen printing technique of front gate line directly affects the conversion efficiency of crystal silicon solar energy battery; So in this case, the design of front gate line shape, the contact resistance between silver electrode and the crystalline silicon all becomes the important parameter that influences crystal silicon cell.
The general in the market front gate line shape that adopts is the pectination grid line; Promptly form jointly by two main grids and many thin grid; Shape under its perfect condition should be with thin grid line do more carefully close more; Should keep good electric current collection ability, reduce the shading loss that it causes at the battery upper surface simultaneously again.But the production technology of present silk screen process technology and conductive silver paste all exists certain technical bottleneck, can't reach ideal technical parameter.The width of 5 inches thin grid of battery front side of current most of manufacturer production is about 120 μ m～140 μ m, thin grizzly bar numerical control built in about 40～50, defectives such as its gate electrode line resistance is big, grid line shading area is big, power loss height.
Summary of the invention
The technical problem that the present invention will solve is: in order to overcome the problem that exists in above-mentioned, provide a kind of half tone type thin grid line battery, its project organization rationally and improve the conversion efficiency of crystal silicon cell.
The technical solution adopted for the present invention to solve the technical problems is: the thin grid line battery of a kind of half tone type; Comprise the battery sheet matrix; The sensitive surface of described battery sheet matrix is provided with a plurality of thin grid lines that are parallel to each other and at least three and the thin perpendicular main grid line of grid line; Spacing between the adjacent two thin grid lines is 5～8um, and the live width of described thin grid line is 60～90um, and the live width of main grid line is 1000～1500um.
The bar number of described main grid line is five.
In order to improve the conversion efficiency of battery, the spacing between the adjacent two thin grid lines is 6um.
The live width of described thin grid line is 75um, and the live width of main grid line is 1250um.
In order to improve battery efficiency effectively, the bar number of described thin grid line is 50～80.
The invention has the beneficial effects as follows: the thin grid line battery of described half tone type, adopting thin grid line width is 60～90um, can effectively improve battery efficiency; Thin grid number of lines is increased to 50～80, shorten the transmission range of electric current on silicon chip effectively, reduce the wastage, the surface doping concentration with basis material reduces simultaneously, has reduced the compound of impurity, can promote the conversion efficiency of crystal silicon cell greatly.
Description of drawings
Below in conjunction with accompanying drawing and embodiment the present invention is further specified.
Fig. 1 is the overall structure sketch map of the thin grid line battery of half tone type of the present invention.
Accompanying drawing acceptance of the bid is kept the score and is stated as follows: 1, battery sheet matrix, 2, grid line carefully, 3, the main grid line.
Embodiment
Combine accompanying drawing that the present invention is done further detailed explanation now.These accompanying drawings are the sketch map of simplification, basic structure of the present invention only is described in a schematic way, so it only show the formation relevant with the present invention.
The thin grid line battery of half tone type as shown in Figure 1; Comprise battery sheet matrix 1; The sensitive surface of battery sheet matrix 1 is provided with the perpendicular main grid line 3 of 75 thin grid lines 2 that are parallel to each other and five and thin grid line 2, and the spacing between the adjacent two main grid lines 3 equates that the spacing between the adjacent two thin grid lines 2 is 6um; The live width of thin grid line 2 is 75um, and the live width of main grid line 3 is 1250um.
The thin grid line battery of half tone type of the present invention at first designs half tone, breaks through the metal grid lines width 120-140um behind traditional screen painting; Increase the collimation of metal grid lines, thereby reduce the shading area of the metal grid lines behind the screen painting, choose electrocondution slurry then; It is low to choose Ag atom activity; Not leaded, applicable to thinner grid line design and the square slurry that hinders the silicon chip that is higher than 55-70 Ω/sq, debug different square resistances at last; Square resistance and metal grid lines parameter, pulp property were realized coupling after silicon chip was mixed, and made final solar cell obtain higher conversion efficiency through above experiment.
With above-mentioned foundation desirable embodiment of the present invention is enlightenment, and through above-mentioned description, the related work personnel can carry out various change and modification fully in the scope that does not depart from this invention technological thought.The technical scope of this invention is not limited to the content on the specification, must confirm its technical scope according to the claim scope.
Claims (5)
1. thin grid line battery of half tone type; It is characterized in that: comprise battery sheet matrix (1); The sensitive surface of described battery sheet matrix (1) is provided with a plurality of thin grid lines (2) that are parallel to each other and at least three and the thin perpendicular main grid line (3) of grid line (2); Spacing between the adjacent two thin grid lines (2) is 5～8um, and the live width of described thin grid line (2) is 60～90um, and the live width of main grid line (3) is 1000～1500um.
2. the thin grid line battery of half tone type according to claim 1 is characterized in that: the bar number of described main grid line (3) is five.
3. the thin grid line battery of half tone type according to claim 1 is characterized in that: the spacing between the adjacent two thin grid lines (2) is 6um.
4. the thin grid line battery of half tone type according to claim 1 is characterized in that: the live width of described thin grid line (2) is 75um, and the live width of main grid line (3) is 1250um.
5. the thin grid line battery of half tone type according to claim 1 is characterized in that: the bar number of described thin grid line (2) is 50～80.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201210316767 CN102810580A (en) | 2012-08-30 | 2012-08-30 | Screen printing plate type fine grid line cell |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201210316767 CN102810580A (en) | 2012-08-30 | 2012-08-30 | Screen printing plate type fine grid line cell |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102810580A true CN102810580A (en) | 2012-12-05 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201210316767 Pending CN102810580A (en) | 2012-08-30 | 2012-08-30 | Screen printing plate type fine grid line cell |
Country Status (1)
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| CN (1) | CN102810580A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103258868A (en) * | 2013-04-28 | 2013-08-21 | 日地太阳能电力股份有限公司 | Silicon solar cell |
| CN105564065A (en) * | 2014-10-08 | 2016-05-11 | 上海神舟新能源发展有限公司 | N-type solar energy cell secondary silk-screen printing method |
| CN105633177A (en) * | 2016-01-28 | 2016-06-01 | 黄河水电光伏产业技术有限公司 | Crystalline silicon solar cell |
| CN108312697A (en) * | 2018-02-02 | 2018-07-24 | 徐州鑫宇光伏科技有限公司 | Without net netting version |
-
2012
- 2012-08-30 CN CN 201210316767 patent/CN102810580A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103258868A (en) * | 2013-04-28 | 2013-08-21 | 日地太阳能电力股份有限公司 | Silicon solar cell |
| CN105564065A (en) * | 2014-10-08 | 2016-05-11 | 上海神舟新能源发展有限公司 | N-type solar energy cell secondary silk-screen printing method |
| CN105633177A (en) * | 2016-01-28 | 2016-06-01 | 黄河水电光伏产业技术有限公司 | Crystalline silicon solar cell |
| CN108312697A (en) * | 2018-02-02 | 2018-07-24 | 徐州鑫宇光伏科技有限公司 | Without net netting version |
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| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20121205 |