CN109968799A - Halftone and crystal silicon battery back electrode preparation method for crystal silicon battery back electrode - Google Patents
Halftone and crystal silicon battery back electrode preparation method for crystal silicon battery back electrode Download PDFInfo
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- CN109968799A CN109968799A CN201910355371.4A CN201910355371A CN109968799A CN 109968799 A CN109968799 A CN 109968799A CN 201910355371 A CN201910355371 A CN 201910355371A CN 109968799 A CN109968799 A CN 109968799A
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- crystal silicon
- silicon battery
- back electrode
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 86
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 86
- 239000010703 silicon Substances 0.000 title claims abstract description 86
- 239000013078 crystal Substances 0.000 title claims abstract description 75
- 238000002360 preparation method Methods 0.000 title claims abstract description 15
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 52
- 239000004332 silver Substances 0.000 claims abstract description 52
- 229910052709 silver Inorganic materials 0.000 claims abstract description 52
- 239000004411 aluminium Substances 0.000 claims abstract description 40
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 40
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 40
- 238000003491 array Methods 0.000 claims description 25
- 238000009826 distribution Methods 0.000 claims description 16
- 230000011218 segmentation Effects 0.000 claims description 4
- 239000004744 fabric Substances 0.000 claims 1
- 239000003292 glue Substances 0.000 claims 1
- 238000004070 electrodeposition Methods 0.000 abstract description 8
- 238000000034 method Methods 0.000 description 9
- 229920002120 photoresistant polymer Polymers 0.000 description 6
- 230000000903 blocking effect Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000012216 screening Methods 0.000 description 3
- 238000005245 sintering Methods 0.000 description 3
- 238000001035 drying Methods 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- 101001073212 Arabidopsis thaliana Peroxidase 33 Proteins 0.000 description 1
- 101001123325 Homo sapiens Peroxisome proliferator-activated receptor gamma coactivator 1-beta Proteins 0.000 description 1
- 102100028961 Peroxisome proliferator-activated receptor gamma coactivator 1-beta Human genes 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000004568 cement Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41F—PRINTING MACHINES OR PRESSES
- B41F15/00—Screen printers
- B41F15/14—Details
- B41F15/34—Screens, Frames; Holders therefor
- B41F15/36—Screens, Frames; Holders therefor flat
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41M—PRINTING, DUPLICATING, MARKING, OR COPYING PROCESSES; COLOUR PRINTING
- B41M1/00—Inking and printing with a printer's forme
- B41M1/12—Stencil printing; Silk-screen printing
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41M—PRINTING, DUPLICATING, MARKING, OR COPYING PROCESSES; COLOUR PRINTING
- B41M1/00—Inking and printing with a printer's forme
- B41M1/26—Printing on other surfaces than ordinary paper
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a kind of halftone for crystal silicon battery back electrode and crystal silicon battery back electrode preparation methods, wherein the halftone may include for for the halftone ontology in P-type wafer back up aluminium paste；It is arranged on halftone ontology, positioned at the block piece of predetermined position, wherein predeterminated position is position corresponding with the main grid of P-type wafer；Block piece includes hollowed out area and occlusion area, wherein occlusion area is corresponding with the region for making silver paste and P-type wafer directly be in contact.Above-mentioned technical proposal disclosed in the present application, the contact area of aluminium paste and P-type wafer can be increased by the hollowed out area in set block piece, correspondingly, the direct contact area of silver paste and P-type wafer can be then reduced by the occlusion area in block piece, therefore, can then reduce p-type crystal silicon battery at the silver electrode position caused by performance loss, and then the performance of p-type crystal silicon battery can be improved.
Description
Technical field
The present invention relates to technical field of solar cell manufacturing, more specifically to one kind for crystal silicon battery back electricity
The halftone and crystal silicon battery back electrode preparation method of pole.
Background technique
P-type crystal silicon solar batteries due to mature preparation process, battery conversion efficiency is high and is widely used in photovoltaic row
In industry.Wherein, either p-type single crystal battery or p-type polycrystalline battery, conventional Al-BSF structure is still with PERC
Based on (Passivated Emitter and Rear Cell, passivation emitter back-contact cell).
Currently, the rear electrode of p-type crystal silicon battery is mainly accomplished by the following way: being removed at the p-type crystal silicon battery back side
Region printing-sintering aluminium layer except entire main grid, then, in the position printing-sintering silver electrode of entire main grid, so that silver electrode
Be in contact at the main grid position of battery with P-type wafer, but due in which silver electrode compared with the contact area of P-type wafer
Greatly, and silver electrode can not form BSF (Back Surface Field, carry on the back electric field) and even can destroy passivation film, therefore, this
Kind implementation will lead to p-type crystal silicon battery and generate bigger performance loss at silver electrode position, thus then can battery
Performance has an impact.
In conclusion how to reduce p-type crystal silicon battery at the silver electrode position caused by performance loss, to improve P
The performance of type crystal silicon battery is current those skilled in the art technical problem urgently to be resolved.
Summary of the invention
In view of this, the object of the present invention is to provide a kind of halftone for crystal silicon battery back electrode and crystal silicon battery back electricity
Pole preparation method, with by the halftone reduce p-type crystal silicon battery at the silver electrode position caused by performance loss, to improve
The performance of p-type crystal silicon battery.
To achieve the goals above, the invention provides the following technical scheme:
A kind of halftone for crystal silicon battery back electrode, comprising:
For for the halftone ontology in P-type wafer back up aluminium paste；
Be arranged on the halftone ontology, positioned at the block piece of predetermined position, wherein the predeterminated position be with it is described
The corresponding position of the main grid of P-type wafer；
The block piece includes hollowed out area and occlusion area, wherein the occlusion area and makes silver paste and the P-type silicon
The region that piece is directly in contact is corresponding.
Preferably, the hollowed out area includes multiple sub- hollowed out areas.
Preferably, the sub- hollowed out area is in array distribution.
Preferably, the sub- hollowed out area is in 2 × 5 arrays, 3 × 5 arrays, 3 × 6 arrays, 3 × 7 arrays, 4 × 7 arrays, 4
Any one array distribution in × 8 arrays.
Preferably, the sub- hollowed out area is dot, ellipse, rectangular, any one in triangle.
Preferably, the size with the P-type wafer of the halftone ontology is equal sized.
Preferably, multiple block pieces are distributed on position corresponding with every main grid of the P-type wafer, and more
A block piece is in segmentation distribution.
Preferably, the block piece is photoresists.
A kind of crystal silicon battery back electrode preparation method, comprising:
It using halftone in P-type wafer back up aluminium paste, and is dried, wherein the halftone is such as any of the above-described
The halftone for crystal silicon battery back electrode；
Predetermined position at the P-type wafer back side prints silver paste, and is sintered, to obtain back electrode, wherein described pre-
If position is position corresponding with the main grid of the P-type wafer.
The present invention provides a kind of halftone for crystal silicon battery back electrode and crystal silicon battery back electrode preparation method,
In, which may include for for the halftone ontology in P-type wafer back up aluminium paste；It is arranged on halftone ontology, is located at
The block piece of predetermined position, wherein predeterminated position is position corresponding with the main grid of P-type wafer；Block piece includes hollow out
Region and occlusion area, wherein occlusion area is corresponding with the region for making silver paste and P-type wafer directly be in contact.
Above-mentioned technical proposal disclosed in the present application includes hollowed out area and screening in the predetermined position setting of halftone ontology
Keep off the block piece in region, wherein predeterminated position is position corresponding with the main grid of P-type wafer, occlusion area and makes silver paste and P
The region that type silicon wafer is directly in contact is corresponding, the halftone is being utilized in P-type wafer back up aluminium paste in this way, in block piece
Region in addition to occlusion area of hollowed out area and halftone ontology can aluminium paste be made to be printed onto P-type wafer, blocked area
Because of blocking for block piece aluminium paste can not reach in P-type wafer through halftone in domain, therefore, then can be in the corresponding positions of P-type wafer
Leaving a blank region is set, silver paste can be made directly to contact in white space with P-type wafer in printing silver paste in order to subsequent,
That is, it is possible to correspondingly can then pass through occlusion area by the contact area that hollowed out area increases aluminium paste and P-type wafer
Therefore the direct contact area for reducing silver paste and P-type wafer can then reduce p-type crystal silicon battery and be produced at silver electrode position
Raw performance loss, and then the performance of p-type crystal silicon battery can be improved.
Detailed description of the invention
In order to more clearly explain the embodiment of the invention or the technical proposal in the existing technology, to embodiment or will show below
There is attached drawing needed in technical description to be briefly described, it should be apparent that, the accompanying drawings in the following description is only this
The embodiment of invention for those of ordinary skill in the art without creative efforts, can also basis
The attached drawing of offer obtains other attached drawings.
Fig. 1 is a kind of structural schematic diagram of the halftone for crystal silicon battery back electrode provided in an embodiment of the present invention；
Fig. 2 is the structure of the back electrode prepared by the P-type wafer back side of the halftone by Fig. 1 provided in an embodiment of the present invention
Schematic diagram；
Fig. 3 is a kind of flow chart of crystal silicon battery back electrode preparation method provided in an embodiment of the present invention.
Specific embodiment
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete
Site preparation description, it is clear that described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.It is based on
Embodiment in the present invention, it is obtained by those of ordinary skill in the art without making creative efforts every other
Embodiment shall fall within the protection scope of the present invention.
Referring to Fig. 1, it illustrates a kind of structures of the halftone for crystal silicon battery back electrode provided in an embodiment of the present invention
Schematic diagram may include:
For for the halftone ontology 1 in P-type wafer back up aluminium paste；
It is arranged on halftone ontology 1, positioned at the block piece 2 of predetermined position, wherein predeterminated position can be and P-type silicon
The corresponding position of the main grid of piece；
Block piece 2 may include hollowed out area 21 and occlusion area 22, wherein occlusion area 22 and make silver paste and P-type silicon
The region that piece is directly in contact is corresponding.
Halftone for crystal silicon battery back electrode may include halftone ontology 1, be provided with multiple mesh on the halftone ontology 1
(not shown), for alloing aluminium paste to pass through halftone when the halftone is placed on the P-type wafer back side to prepare Al-BSF
Set mesh reaches the back side of P-type wafer on ontology 1, and Al-BSF is being formed after oversintering.
Block piece 2 is provided on halftone ontology 1, which is particularly located at the predetermined position of halftone ontology 1, wherein
Predeterminated position is specially position corresponding with the main grid of P-type wafer, i.e., on halftone ontology 1 it is set discharge side by side block
The quantity of part 2 is identical as the main grid quantity of P-type wafer, that is to say, that the halftone can be adapted for 5 main grids, 6 main grids, 7 main grids, 8
The p-type crystal silicon battery of 15 main grid of main grid ..., it is of course also possible to be suitable for inclusion in the p-type crystal silicon battery of other main grid quantity.Separately
Outside, block piece 2 set on halftone ontology 1 includes hollowed out area 21 and the two regions of occlusion area 22, wherein vacancy section
The region of halftone ontology 1 is not blocked, is exposed in domain 21 as, and occlusion area 22 is to block, do not expose halftone sheet
The region of body 1.
When using the halftone, when the back up aluminium paste of P-type wafer is to prepare Al-BSF, aluminium paste can pass through block piece 2
Region in addition to block piece 2 of hollowed out area 21, halftone ontology 1 penetrate and reach the back side of P-type wafer, burnt by drying
After knot, P-type wafer back side position corresponding with the hollowed out area 21 of block piece 2 and halftone ontology 1 are in addition to block piece 2
Region have Al-BSF presence, but at the position corresponding with the occlusion area 22 of block piece 2 of the P-type wafer back side can because screening
It keeps off blocking for region 22 and Al-BSF can not be formed through aluminium paste, i.e., it can be in the occlusion area 22 at the P-type wafer back side and block piece 2
Leaving a blank region on corresponding position, wherein drying temperature generally can be 200-350 DEG C, the peak value one of sintering temperature
As can be greater than 750 DEG C, and the process that printed aluminium paste is sintered can be carried out after printing silver paste, it can
Aluminium paste and silver paste are sintered simultaneously.Using the halftone P-type wafer back up aluminium paste to obtain Al-BSF after,
Silver paste can be then printed at the position of P-type wafer back side main grid, and is sintered, to guarantee P while forming silver electrode
Type silicon wafer have biggish bonding area, in order to when preparing photovoltaic module for the welding between p-type crystal silicon battery, until
This, then can the back side of P-type wafer formed include aluminium electrode and silver electrode back electrode.Since the P-type wafer back side exists
The white space (white space is i.e. corresponding with the occlusion area 22 of block piece 2) for not printing aluminium paste and being formed, then printing
When brush silver paste, the silver paste for being printed on white space can be formed with P-type wafer directly to be contacted, and is printed at main grid position but is located at
Silver paste except white space can then be in contact with aluminium paste, and can't be formed with P-type wafer and directly be contacted.
Specifically it may refer to Fig. 2, it illustrates the halftones provided in an embodiment of the present invention by Fig. 1 at the P-type wafer back side
The structural schematic diagram of prepared back electrode, as shown in Figure 2, the firstth area inside region, main grid except 3 main grid of P-type wafer
(region is specifically corresponding with the hollowed out area 21 on halftone in block piece 2) is provided with aluminium electrode 4,3 main grid of P-type wafer in domain
Silver electrode 5 is provided at position, but (region is in addition to the first area inside main grid to the second area inside main grid
Region, and second area is specifically corresponding with the occlusion area 22 on halftone in block piece 2) at for silver electrode 5 and P-type wafer 3
The region being directly in contact, wherein the silver electrode 5 at main grid position may insure that p-type crystal silicon battery has bigger weldering
Region is connect, consequently facilitating being connected with other p-type crystal silicon batteries and preparing photovoltaic module.
It is arranged at main grid position it can be seen from the above, the area of the hollowed out area 21 in block piece 2 is equal in P-type wafer
Aluminium paste area, the area of the occlusion area 22 in block piece 2 is equal to the silver paste being arranged at main grid position in P-type wafer
Therefore the area being directly in contact with P-type wafer is included hollowed out area 21 and is blocked by set on halftone ontology 1
The block piece 2 in region 22 can increase the contact area of aluminium paste Yu the P-type wafer back side, correspondingly, then can reduce silver paste and p-type
The direct contact area of silicon wafer directly contacts and produced by contact position to can then reduce as silver paste with P-type wafer
Performance loss, and then the performance of p-type crystal silicon battery then can be improved.And in block piece 2 hollowed out area 21 area it is bigger,
Aluminium paste is at main grid position and the contact area of P-type wafer is bigger, and correspondingly, silver paste is at main grid position and P-type wafer
Direct contact area with regard to smaller, thus can then reduce more significantly p-type crystal silicon battery at the silver electrode position caused by
Performance loss, and then the performance of p-type crystal silicon battery can be then improved more significantly.
Above-mentioned technical proposal disclosed in the present application includes hollowed out area and screening in the predetermined position setting of halftone ontology
Keep off the block piece in region, wherein predeterminated position is position corresponding with the main grid of P-type wafer, occlusion area and makes silver paste and P
The region that type silicon wafer is directly in contact is corresponding, the halftone is being utilized in P-type wafer back up aluminium paste in this way, in block piece
Region in addition to occlusion area of hollowed out area and halftone ontology can aluminium paste be made to be printed onto P-type wafer, blocked area
Because of blocking for block piece aluminium paste can not reach in P-type wafer through halftone in domain, therefore, then can be in the corresponding positions of P-type wafer
Leaving a blank region is set, silver paste can be made directly to contact in white space with P-type wafer in printing silver paste in order to subsequent,
That is, it is possible to correspondingly can then pass through occlusion area by the contact area that hollowed out area increases aluminium paste and P-type wafer
Therefore the direct contact area for reducing silver paste and P-type wafer can then reduce p-type crystal silicon battery and be produced at silver electrode position
Raw performance loss, and then the performance of p-type crystal silicon battery can be improved.
A kind of halftone for crystal silicon battery back electrode provided in an embodiment of the present invention, hollowed out area 21 may include multiple
Sub- hollowed out area.
In the halftone for crystal silicon battery back electrode, the hollowed out area 21 that block piece 2 is included can specifically include more
A sub- hollowed out area, in the case where ensuring that p-type crystal silicon battery has enough welding regions and to ensure that silver electrode can be with p-type
In the case that silicon wafer has directly contact, increase the contact area of aluminium paste and P-type wafer, as much as possible to reduce main grid as much as possible
The direct contact area of silver electrode and P-type wafer at position is produced at silver electrode position to reduce p-type crystal silicon battery as far as possible
Raw performance loss.
A kind of halftone for crystal silicon battery back electrode provided in an embodiment of the present invention, sub- hollowed out area are in array distribution.
Sub- hollowed out area included in block piece 2 can be in array distribution, not only make prepared aluminium electrode in this way
It can be in array distribution at the back side of p-type crystal silicon battery, and aluminium electrode can be made to have carried out rule at the back side of p-type crystal silicon battery
It is then distributed, correspondingly, then has the silver electrode being directly in contact with P-type wafer at the back side of p-type crystal silicon battery
Regular distribution, so that silver electrode can form good Ohmic contact with P-type wafer, to improve the property of p-type crystal silicon battery
Energy.
A kind of halftone for crystal silicon battery back electrode provided in an embodiment of the present invention, sub- hollowed out area are in 2 × 5 arrays, 3
× 5 arrays, 3 × 6 arrays, 3 × 7 arrays, 4 × 7 arrays, any one array distribution in 4 × 8 arrays.
Sub- hollowed out area in block piece 2 specifically can be in 2 × 5 arrays, 3 × 5 arrays, 3 × 6 arrays, 3 × 7 arrays, 4
Any one array distribution in × 7 arrays, 4 × 8 arrays, to increase the contact surface of aluminium paste and P-type wafer at main grid position
Product, and prepared aluminium electrode is allowed at the back side of p-type crystal silicon battery can be in regular arrangement.
Certainly, the sub- hollowed out area being arranged in array in block piece 2 is not limited to using above-mentioned array distribution, can also
To use other array distributions according to the distribution situation of P-type wafer main grid, quantity situation, wherein Fig. 1 is with sub- hollowed out area
In being illustrated for 2 × 13 arrays.
A kind of halftone for crystal silicon battery back electrode provided in an embodiment of the present invention, sub- hollowed out area can for dot,
Oval, rectangular, any one in triangle.
In block piece 2, sub- hollowed out area is specifically as follows dot, ellipse, rectangular, any one in triangle, with
The contact area for increasing aluminium paste and P-type wafer, to reduce the direct contact area of silver paste and P-type wafer.
It is of course also possible to use pentagon, hexagon, non-regular shape etc. are as the sub- hollowed out area in block piece 2, sheet
Application does not do any restriction to the shape of sub- hollowed out area.
A kind of halftone for crystal silicon battery back electrode provided in an embodiment of the present invention, the size and P-type silicon of halftone ontology 1
Piece it is equal sized.
For the ease of preparing aluminium electrode at the back side of P-type wafer using halftone, then used by halftone halftone ontology 1
Size can be equal sized with P-type wafer, to reduce because of 1 size of halftone ontology print different and increased from P-type silicon chip size
Brush set-up procedure, to reduce the fussy degree of aluminium paste printing.
A kind of halftone for crystal silicon battery back electrode provided in an embodiment of the present invention, every main grid phase with P-type wafer
Multiple block pieces 2 are distributed on corresponding position, and multiple block pieces 2 are in segmentation distribution.
In the halftone for crystal silicon battery back electrode, it can divide on position corresponding with every main grid of P-type wafer
Multiple block pieces 2 are furnished with, and these block pieces 2 can be that is, two neighboring positioned at corresponding with same main grid in segmentation distribution
Position on block piece 2 between there is a certain distance (specifically may refer to Fig. 1), this design can not only reduce silver paste
With the direct contact area of P-type wafer, and can not need at the interval location between two neighboring block piece 2 print silver
Slurry, therefore, then can reduce the usage amount of silver paste, so as to reduce back electrode preparation cost, reduce the system of p-type crystal silicon battery
Standby cost.
A kind of halftone for crystal silicon battery back electrode provided in an embodiment of the present invention, block piece 2 can be photoresists.
Set block piece 2 is specifically as follows photoresists on halftone ontology 1, correspondingly, then can be by photoetching process
That block piece 2 is arranged in the predetermined position of halftone ontology 1, detailed process can be with are as follows:
Coat photoresists on conventional halftone ontology 1, then, by with figuratum template (egative film) to coating thoughts
The halftone ontology 1 of optical cement carries out blocking exposure, and being had in block piece 2 and block piece 2 with formation includes that hollowed out area 21 (is not covered
Be stamped photoresists) and occlusion area 22 (being covered with photoresists) halftone, it is this to obtain the halftone for crystal silicon battery back electrode
Mode operate fairly simple, and cost is relatively low.
The embodiment of the invention also provides a kind of crystal silicon battery back electrode preparation methods, and referring to Fig. 3, it illustrates the present invention
Embodiment provide a kind of crystal silicon battery back electrode preparation method flow chart, may include:
S11: it using halftone in P-type wafer back up aluminium paste, and is dried, wherein halftone can be any of the above-described
Kind is used for the halftone of crystal silicon battery back electrode.
S12: the predetermined position at the P-type wafer back side prints silver paste, and is sintered, to obtain back electrode, wherein pre-
If position can be position corresponding with the main grid of P-type wafer.
Illustrating about S11 and S12 in a kind of crystal silicon battery back electrode preparation method provided in an embodiment of the present invention
The detailed description that may refer to corresponding part in a kind of halftone for crystal silicon battery back electrode provided in an embodiment of the present invention,
This is repeated no more.
It should be noted that, in this document, relational terms such as first and second and the like are used merely to a reality
Body or operation are distinguished with another entity or operation, are deposited without necessarily requiring or implying between these entities or operation
In any actual relationship or order or sequence.Moreover, the terms "include", "comprise" or its any other variant are intended to
Non-exclusive inclusion, so that the element that the process, method, article or equipment including a series of elements is intrinsic.?
Do not have in the case where more limiting, the element limited by sentence "including a ...", it is not excluded that including the element
There is also other identical elements in process, method, article or equipment.In addition, above-mentioned technology provided in an embodiment of the present invention
In scheme with correspond to the consistent part of technical solution realization principle and unspecified in the prior art, in order to avoid excessively repeat.
The foregoing description of the disclosed embodiments can be realized those skilled in the art or using the present invention.To this
A variety of modifications of a little embodiments will be apparent for a person skilled in the art, and the general principles defined herein can
Without departing from the spirit or scope of the present invention, to realize in other embodiments.Therefore, the present invention will not be limited
It is formed on the embodiments shown herein, and is to fit to consistent with the principles and novel features disclosed in this article widest
Range.
Claims (9)
1. a kind of halftone for crystal silicon battery back electrode characterized by comprising
For for the halftone ontology in P-type wafer back up aluminium paste；
Be arranged on the halftone ontology, positioned at the block piece of predetermined position, wherein the predeterminated position be and the p-type
The corresponding position of the main grid of silicon wafer；
The block piece includes hollowed out area and occlusion area, wherein the occlusion area with keep silver paste and the P-type wafer straight
It is corresponding to connect the region being in contact.
2. the halftone according to claim 1 for crystal silicon battery back electrode, which is characterized in that the hollowed out area includes
Multiple sub- hollowed out areas.
3. the halftone according to claim 2 for crystal silicon battery back electrode, which is characterized in that the sub- hollowed out area is in
Array distribution.
4. the halftone according to claim 3 for crystal silicon battery back electrode, which is characterized in that the sub- hollowed out area is in
2 × 5 arrays, 3 × 5 arrays, 3 × 6 arrays, 3 × 7 arrays, 4 × 7 arrays, any one array distribution in 4 × 8 arrays.
5. the halftone according to claim 3 for crystal silicon battery back electrode, which is characterized in that the sub- hollowed out area is
Dot, ellipse, rectangular, any one in triangle.
6. the halftone according to claim 1 for crystal silicon battery back electrode, which is characterized in that the ruler of the halftone ontology
It is very little equal sized with the P-type wafer.
7. the halftone according to any one of claims 1 to 6 for crystal silicon battery back electrode, which is characterized in that with the P
Multiple block pieces are distributed on the corresponding position of every main grid of type silicon wafer, and multiple block pieces are in segmentation point
Cloth.
8. the halftone according to claim 7 for crystal silicon battery back electrode, which is characterized in that the block piece is photosensitive
Glue.
9. a kind of crystal silicon battery back electrode preparation method characterized by comprising
It using halftone in P-type wafer back up aluminium paste, and is dried, wherein the halftone is such as claim 1 to 8 times
The halftone of crystal silicon battery back electrode is used for described in one；
Predetermined position at the P-type wafer back side prints silver paste, and is sintered, to obtain back electrode, wherein the default position
It is set to position corresponding with the main grid of the P-type wafer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910355371.4A CN109968799A (en) | 2019-04-29 | 2019-04-29 | Halftone and crystal silicon battery back electrode preparation method for crystal silicon battery back electrode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910355371.4A CN109968799A (en) | 2019-04-29 | 2019-04-29 | Halftone and crystal silicon battery back electrode preparation method for crystal silicon battery back electrode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN109968799A true CN109968799A (en) | 2019-07-05 |
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