CN104241446A - Back electrode structure of N-type crystalline silicon solar cell and manufacturing method thereof - Google Patents
Back electrode structure of N-type crystalline silicon solar cell and manufacturing method thereof Download PDFInfo
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- CN104241446A CN104241446A CN201410433622.3A CN201410433622A CN104241446A CN 104241446 A CN104241446 A CN 104241446A CN 201410433622 A CN201410433622 A CN 201410433622A CN 104241446 A CN104241446 A CN 104241446A
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- 229910021419 crystalline silicon Inorganic materials 0.000 title claims abstract description 63
- 238000004519 manufacturing process Methods 0.000 title abstract description 8
- 238000002161 passivation Methods 0.000 claims abstract description 79
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 63
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 63
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 10
- 229910052698 phosphorus Inorganic materials 0.000 claims abstract description 10
- 239000011574 phosphorus Substances 0.000 claims abstract description 10
- 239000004411 aluminium Substances 0.000 claims description 56
- 238000003475 lamination Methods 0.000 claims description 47
- 238000009826 distribution Methods 0.000 claims description 24
- 229910004205 SiNX Inorganic materials 0.000 claims description 22
- 238000007650 screen-printing Methods 0.000 claims description 21
- 238000005240 physical vapour deposition Methods 0.000 claims description 16
- 238000002360 preparation method Methods 0.000 claims description 13
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 11
- 238000005245 sintering Methods 0.000 claims description 11
- 238000000151 deposition Methods 0.000 claims description 10
- 230000008021 deposition Effects 0.000 claims description 7
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 6
- 238000001659 ion-beam spectroscopy Methods 0.000 claims description 4
- 238000007738 vacuum evaporation Methods 0.000 claims description 4
- 239000002131 composite material Substances 0.000 claims description 3
- 238000010894 electron beam technology Methods 0.000 claims description 2
- 230000005068 transpiration Effects 0.000 claims description 2
- 238000009792 diffusion process Methods 0.000 abstract description 15
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 17
- 229910052710 silicon Inorganic materials 0.000 description 17
- 239000010703 silicon Substances 0.000 description 17
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 15
- 229910052796 boron Inorganic materials 0.000 description 15
- 239000011159 matrix material Substances 0.000 description 15
- 239000000463 material Substances 0.000 description 9
- 238000000034 method Methods 0.000 description 8
- 239000002210 silicon-based material Substances 0.000 description 8
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 7
- 238000007639 printing Methods 0.000 description 7
- 229910052709 silver Inorganic materials 0.000 description 7
- 239000004332 silver Substances 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 239000011248 coating agent Substances 0.000 description 6
- 238000000576 coating method Methods 0.000 description 6
- 235000008216 herbs Nutrition 0.000 description 6
- 210000002268 wool Anatomy 0.000 description 6
- 239000006117 anti-reflective coating Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 239000013078 crystal Substances 0.000 description 4
- 238000013461 design Methods 0.000 description 4
- 230000002708 enhancing effect Effects 0.000 description 4
- 239000012528 membrane Substances 0.000 description 4
- 238000012544 monitoring process Methods 0.000 description 4
- 238000007747 plating Methods 0.000 description 4
- 230000008859 change Effects 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 230000011514 reflex Effects 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 239000002002 slurry Substances 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- 101001073212 Arabidopsis thaliana Peroxidase 33 Proteins 0.000 description 1
- 101001123325 Homo sapiens Peroxisome proliferator-activated receptor gamma coactivator 1-beta Proteins 0.000 description 1
- 102100028961 Peroxisome proliferator-activated receptor gamma coactivator 1-beta Human genes 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- -1 adopt PVD to make Substances 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000003667 anti-reflective effect Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 239000002803 fossil fuel Substances 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a back electrode structure of an N-type crystalline silicon solar cell. The structure includes an N-type crystalline silicon wafer. A phosphorus diffusion layer is arranged on the back surface of the N-type crystalline silicon wafer and provided with a back passivation layer. Punctate electrodes are arranged in the back passivation layer and penetrate through the back passivation layer to make contact with the phosphorus diffusion layer. Aluminum layers are arranged on the surface of the back passivation layer and the whole areas or the local areas of the surfaces of the punctuate electrodes. The back electrode can effectively lower the series resistance of the back face of an N-type cell piece, increase the fill factor (FF) of the cell and further improve the reflection effect of the back face of the N-type crystalline silicon, so that the short-circuit current of the cell is enhanced. The invention further discloses a manufacturing method of the back electrode structure of the N-type crystalline silicon solar cell.
Description
Technical field
The invention belongs to technical field of solar batteries, be specifically related to back electrode structure of a kind of N-type crystalline silicon solar cell and preparation method thereof.
Background technology
Along with the fossil fuel approach exhaustion day by day of routine, as in the sustainable energies such as wind energy, water energy, nuclear energy, tidal energy, it is the most clean that solar energy is undoubtedly one existing, the most generally, and one of safest fungible energy source.In all solar cells, be that the solar cell of material obtains business promotion on a large scale with silicon, this is because the reserves of silicon materials in the earth's crust are very abundant, the solar cell of other types compared by the solar cell of silicon materials simultaneously, there are excellent mechanical performance and stable electric property, can say, silicon materials solar cell is in occupation of the critical positions of photovoltaic art.Therefore, various countries' photovoltaic enterprise silicon solar cell of research and development high performance-price ratio of doing one's utmost.
Traditional solar cell utilizes P-type crystal silicon material, diffuses to form PN junction, then deposit SiNx antireflective film in front side of matrix (sensitive surface) high temperature phosphorous, front printing silver electrode, back up back electrode and aluminium paste.For the solar cell that profit manufactures in this way, the most high-photoelectric transformation efficiency obtained is generally about 18%.In addition, carry out the PERC battery improved on this basis, add better Passivation Treatment overleaf, efficiency can reach 19 ~ 20%, but its maximum shortcoming is with regard to the larger problem of illumination decay, does not temporarily have effective solution.
Comparatively speaking, in N-type silicon materials, metal impurities and other impurity most, the capture cross of defect to electronics are greater than the capture cross to hole, for N-type silicon and the P-type silicon of equal rank (as identical impurity concentration), the minority carrier life time of N-type silicon is higher than P-type silicon, the photoelectric conversion efficiency that the solar cell that the solar cell of N-type silicon materials manufacture theoretically can obtain manufacturing than P-type silicon material is higher.The more important thing is the problem that effectively prevent illumination decay with the silica-based solar cell for material manufacture of N-type.
At present, N-type crystal silicon solar battery is carried out the foreign corporation's many employings back contact battery and the HIT battery structure that quantize production.The former feature be positive and negative electrode all overleaf, mask growth and local diffusion are carried out repeatedly in the region under positive and negative electrode, and all very high to the required precision of instrument and supplies, HIT battery then needs introduction one row membrane equipment expensive, and improvement cost is too high.
Summary of the invention
The object of the present invention is to provide a kind of back electrode structure of N-type crystalline silicon solar cell, this back electrode structure effectively can reduce N-type battery slice back side series resistance, improve the fill factor, curve factor (FF) of battery, also can strengthen the reflex of incident light at the N-type crystalline silicon back side, thus improve the short circuit current of battery.
The present invention also aims to the preparation method of the back electrode structure providing above-mentioned N-type crystalline silicon solar cell, this preparation method is without the need to the input of high precision apparatus and a large amount of membrane equipment, and technique simply easily realizes, and cost is low.
First object of the present invention is achieved through the following technical solutions: a kind of back electrode structure of N-type crystalline silicon solar cell, comprise N-type crystalline silicon sheet, phosphorus-diffused layer is provided with at described N-type crystalline silicon sheet back surface, described phosphorus-diffused layer is provided with backside passivation layer, in described backside passivation layer, be provided with the Spot electrodes contacted with described phosphorus-diffused layer through described backside passivation layer, the Zone Full on described backside passivation layer surface and described Spot electrodes surface or regional area are provided with aluminium lamination.
As one of the present invention preferred embodiment, described Spot electrodes is made up of the multiple Spot electrodes unit in array distribution, and the spacing of adjacent two Spot electrodes unit is identical, and wherein odd-numbered line and even number line two consecutive points shape electrode unit are distributed in same row.
Concrete, if the backplate in the present invention is spot distribution, and become matrix form to be uniformly distributed, this distribution can be with the position of the Spot electrodes unit on square four summits for unit, and matrix is expanded to the whole cell piece back side.
As another preferred embodiment of the present invention, described Spot electrodes is made up of the multiple Spot electrodes unit in array distribution, the spacing of adjacent two Spot electrodes unit is identical, wherein odd-numbered line two consecutive points shape electrode unit is distributed in same row, even number line two consecutive points shape electrode unit is distributed in another row, and this two row Spot electrodes unit does not coincide.
Concrete, if the backplate in the present invention is spot distribution, and become matrix form to be uniformly distributed, this distribution can be that matrix expands the extremely whole cell piece back side with the position of the Spot electrodes unit on equilateral triangle or orthohexagonal summit for unit.
Spot electrodes unit of the present invention is preferably circular, and the diameter of described circle is 0.01 ~ 2mm, more preferably 0.01 ~ 0.5mm, and the spacing of adjacent two Spot electrodes unit is 0.05 ~ 10mm, more preferably 0.05 ~ 5mm.
As a modification of the present invention, the present invention is also provided with main gate line on the surface on described backside passivation layer surface and described Spot electrodes, in described backside passivation layer and described Spot electrodes, the remaining area on the surface except main gate line is provided with aluminium lamination, and described main gate line contacts with described aluminium lamination.
Described main gate line is preferably 1 ~ 4, by arranging main gate line on described Spot electrodes, is convenient to welding welding, output current.
Backside passivation layer of the present invention is preferably SiNx layer, SiO
2layer or SiNx/SiO
2composite bed.
The thickness of backside passivation layer of the present invention is preferably 10 ~ 200nm, preferably adopts film deposition techniques such as the modes such as PECVD or PVD to make.
The present invention preferably adopts screen printing mode to make aluminium lamination, the thickness of the aluminium lamination made is preferably 0.0005 ~ 2mm, or preferably adopt PVD mode to make aluminium lamination, the thickness of the aluminium lamination made is preferably 0.0005 ~ 1mm, and described PVD mode preferably includes vacuum evaporation plated film, ion beam sputtering deposition or electron beam transpiration plated film.
The present invention is by being set to Spot electrodes by back electrode structure, described Spot electrodes forms ohmic contact through the passivation layer of silicon chip back side, cover silicon chip back side with conductive aluminum layer again, effectively can reduce N-type battery slice back side series resistance, improve the fill factor, curve factor (FF) of battery.The aluminium lamination structure of silicon chip back side also can strengthen the reflex of incident light at the silica-based back side, thus improves the short circuit current of battery.For conventional n-type silicon solar cell production line general at present, only need change a small amount of process conditions, just can directly produce.
The present invention carries out in a conventional manner arranging on the front surface of N-type silicon substrate, such as two-sided making herbs into wool, arrange diffused layer of boron at front surface, passivation layer is as alumina layer, and antireflection layer is as silicon nitride anti-reflecting film and print thin grid in front as the thin grid line of silver-colored aluminium etc.
Second object of the present invention is achieved through the following technical solutions: the preparation method of the back electrode structure of above-mentioned N-type crystalline silicon solar cell, comprise and choose N-type crystalline silicon sheet, further comprising the steps of: to carry out phosphorus at the back surface of described N-type crystalline silicon sheet and spread to obtain phosphorus-diffused layer, described phosphorus-diffused layer arranges backside passivation layer, described backside passivation layer prints Spot electrodes and dries, Zone Full again on described backside passivation layer surface and described Spot electrodes surface or regional area arrange aluminium lamination and dry, after sintering, described Spot electrodes is through described passivation layer and described phosphorus-diffused layer phase ohmic contact, be prepared into the back electrode structure of N-type crystalline silicon solar cell.
As one of the present invention preferred embodiment, the preparation method of the backplate of N-type crystalline silicon solar cell in the present invention, the one side battery structure flow scheme improvements mainly based on the front PN junction adopted in industry is: the two-sided making herbs into wool of crystalline silicon, the diffusion of front boron, the diffusion of back side phosphorus, front surface A l
2o
3the preparation, co-sintering etc. of passivating film and SiNx antireflective coating deposition, passivating back cvd dielectric layer, front silver aluminium paste silk screen printing and oven dry, the silk screen printing of back electrode point cantact and oven dry, back of the body aluminium lamination.
Wherein, the detailed process of silk screen printing back side Spot electrodes is: utilize silk screen printing to print silver-colored pulp material in passivation layer surface and form point-like back electrode, drying sinters, and makes solidification ag paste electrode form ohmic contact through passivation dielectric layer and silicon chip back side.
Tool of the present invention has the following advantages:
(1) the present invention is by being designed to the backplate of lattice-like distribution by back electrode structure, and described Spot electrodes and silicon chip are formed ohmic contact, cover passivation layer surface with easy conductive aluminium lamination again, effectively can reduce N-type battery slice back side series resistance, improve the fill factor, curve factor (FF) of battery;
(2) the present invention overleaf electrode arranges aluminium lamination and can strengthen the reflex of incident light at the silica-based back side, thus improves the short circuit current of battery;
(3) the present invention adopts the silk screen printing that generally uses in industry and physical vapour deposition (PVD) (Physical Vapor Deposition, PVD) method to prepare backplate, has easy realization, the advantages such as successful;
(4) preparation method of backplate of the present invention, can be mutually compatible with existing technique, and to conventional n-type silicon solar cell production line general at present, only need change a small amount of process conditions, just can directly produce, concise in technology, cost is low.
Accompanying drawing explanation
Fig. 1 is the structural representation of the cell piece made in the embodiment of the present invention 1, and wherein 1 is front SiNx antireflection layer; 2 is Al
2o
3passivation layer; 3 is boron diffusion p+ districts, front; 4 is the substrates of N-shaped silicon materials; 5 is phosphorus diffusion n+ districts, the back side; 6 is passivating back dielectric layers; 7 is silver electrodes (or comprise back side main grid, not shown in FIG.) that the back side becomes spot distribution; 8 is back side aluminium laminations;
Fig. 2 is the schematic diagram of 156mm × 156mm n type single crystal silicon sheet back side Spot electrodes in the embodiment of the present invention 2, with square vertices position for the distribution schematic diagram after cell matrix expansion;
Fig. 3 is 156mm × 156mmN type monocrystalline back side Spot electrodes in the embodiment of the present invention 2, with equilateral triangle or regular hexagon vertex position for cell matrix expand after distribution schematic diagram;
Fig. 4 is 156mm × 156mmN type monocrystalline back side Spot electrodes in the embodiment of the present invention 3, with square vertices position for the distribution schematic diagram after cell matrix expansion, Spot electrodes is provided with three main gate line;
Fig. 5 is 156mm × 156mmN type monocrystalline back side Spot electrodes in the embodiment of the present invention 4, with equilateral triangle or regular hexagon vertex position for cell matrix expand after distribution schematic diagram, Spot electrodes is provided with three main gate line.
Embodiment
embodiment 1
As shown in Figure 1, a kind of back electrode structure of N-type crystalline silicon solar cell, comprise N-type crystalline silicon sheet, phosphorus-diffused layer 5 is provided with at N-type crystalline silicon sheet 4 back surface, phosphorus-diffused layer 5 is provided with backside passivation layer 6, be provided with the Spot electrodes 7 contacted with phosphorus-diffused layer 5 through backside passivation layer 6 overleaf in passivation layer 6, all surfaces of passivation layer 6 and Spot electrodes 7 is also provided with aluminium lamination 8 overleaf.
Also be provided with front diffused layer of boron 3 at the front surface of N-type crystalline silicon sheet 4, diffused layer of boron 3 is provided with Al
2o
3passivation layer 2, at Al
2o
3passivation layer 2 is provided with front SiNx antireflection layer 1.
Back electrode point cantact adopts distribution pattern as shown in Figure 2, and be made up of the multiple Spot electrodes unit in array distribution, the spacing of adjacent two Spot electrodes unit is identical, and wherein odd-numbered line two Spot electrodes cell distribution adjacent with even number line two are at same row.Also can be understood as with the position of the Spot electrodes unit at square four summits place for unit, matrix is expanded to the whole cell piece back side.
The present embodiment does not arrange two or many main gate line in the design of point-like back electrode, i.e. the Spot electrodes that only formed by matrix point-like electrode unit of whole backplate.
In the present embodiment, the shape of back electrode Spot electrodes unit is circular, and diameter is 0.14mm, and dot spacing is 1mm, and the percentage that Spot electrodes cellar area accounts for the whole cell piece back side gross area is 1.5%.
Wherein backside passivation layer is SiNx passivation reflection enhancing coating, and adopt board-like PECVD or tubular type PECVD to make, film thickness monitoring is at about 60nm.
In the present embodiment, back aluminium lamination adopts general silk-screen printing technique printing to form, and aluminium lamination covers the whole cell piece back side, and aluminum layer thickness is about 0.1mm, aluminum slurry material, and electric conductivity is good, can not damage the material of SiNx after sintering.
The preparation method of the back electrode structure of the present embodiment above-mentioned N-type crystalline silicon solar cell is as follows: choose N-type crystalline silicon sheet, through routine two-sided making herbs into wool, front boron diffusion, the back side phosphorus diffusion, front plating Al
2o
3after passivation layer and SiNx antireflective coating, overleaf phosphorus-diffused layer adopts board-like PECVD or tubular type PECVD to prepare passivating back dielectric layer, silk screen printing front silver aluminium paste and oven dry, silk screen printing back electrode Spot electrodes and oven dry, silk screen printing back of the body aluminium lamination and oven dry, last co-sintering again, be prepared into the backplate of N-type crystalline silicon solar cell.
embodiment 2
As shown in Figure 1, a kind of back electrode structure of N-type crystalline silicon solar cell, comprise N-type crystalline silicon sheet, phosphorus-diffused layer 5 is provided with at N-type crystalline silicon sheet 4 back surface, phosphorus-diffused layer 5 is provided with backside passivation layer 6, be provided with the Spot electrodes 7 contacted with phosphorus-diffused layer 5 through backside passivation layer 6 overleaf in passivation layer 6, the Zone Full on passivation layer 6 and Spot electrodes 7 surface is provided with aluminium lamination 8 overleaf.
Also be provided with front diffused layer of boron 3 at the front surface of N-type crystalline silicon sheet 4, diffused layer of boron 3 is provided with Al
2o
3passivation layer 2, at Al
2o
3passivation layer 2 is provided with front SiNx antireflection layer 1.
Back electrode point cantact adopts distribution pattern as shown in Figure 3, be made up of the multiple Spot electrodes unit in array distribution, the spacing of adjacent two Spot electrodes unit is identical, wherein odd-numbered line two consecutive points shape electrode unit is distributed in same row, even number line two consecutive points shape electrode unit is distributed in another row, and this two row Spot electrodes unit does not coincide, also can be understood as with equilateral triangle or regular hexagon vertex position for unit, matrix is expanded to the whole cell piece back side.
The present embodiment does not arrange two or many main gate line in the design of point-like back electrode, i.e. the Spot electrodes that only formed by matrix point-like electrode unit of whole backplate.
In the present embodiment, the shape of back electrode Spot electrodes unit is circular, and diameter is 0.14mm, and dot spacing is 1mm, and the percentage that Spot electrodes cellar area accounts for the whole cell piece back side gross area is 1.8%.
Wherein backside passivation layer is SiNx passivation reflection enhancing coating, and adopt board-like PECVD or tubular type PECVD to make, film thickness monitoring is at about 60nm.
In the present embodiment, back aluminium lamination adopts general silk-screen printing technique printing to form, and aluminium lamination covers the whole cell piece back side, and aluminum layer thickness is about 0.1mm, aluminum slurry material, and electric conductivity is good, can not damage the material of SiNx after sintering.
The preparation method of the back electrode structure of the present embodiment above-mentioned N-type crystalline silicon solar cell is as follows: choose N-type crystalline silicon sheet, through routine two-sided making herbs into wool, front boron diffusion, the back side phosphorus diffusion, front plating Al
2o
3after passivation layer and SiNx antireflective coating, overleaf phosphorus-diffused layer adopts board-like (or tubular type) PECVD to prepare passivating back dielectric layer, silk screen printing front silver aluminium paste and oven dry, silk screen printing back electrode Spot electrodes and oven dry, silk screen printing back of the body aluminium lamination and oven dry, last co-sintering again, be prepared into the backplate of N-type crystalline silicon solar cell.
embodiment 3
As shown in Figure 1, a kind of back electrode structure of N-type crystalline silicon solar cell, comprise N-type crystalline silicon sheet, phosphorus-diffused layer 5 is provided with at N-type crystalline silicon sheet 4 back surface, phosphorus-diffused layer 5 is provided with backside passivation layer 6, be provided with the Spot electrodes 7 contacted with phosphorus-diffused layer 5 through backside passivation layer 6 overleaf in passivation layer 6, the regional area on passivation layer 6 and Spot electrodes surface is provided with aluminium lamination 8 overleaf.
Also be provided with front diffused layer of boron 3 at the front surface of N-type crystalline silicon sheet 4, diffused layer of boron 3 is provided with Al
2o
3passivation layer 2, at Al
2o
3passivation layer 2 is provided with front SiNx antireflection layer 1.
Back electrode point cantact adopts distribution pattern as shown in Figure 2, and be made up of the multiple Spot electrodes unit in array distribution, the spacing of adjacent two Spot electrodes unit is identical, and wherein odd-numbered line and even number line two consecutive points shape electrode unit are distributed in same row.Also can be understood as with the position of the Spot electrodes unit at square four summits place for unit, matrix is expanded to the whole cell piece back side.
In the present embodiment, the shape of back electrode Spot electrodes unit is circular, and diameter is 0.05mm, and dot spacing is 0.5mm, and the percentage that Spot electrodes cellar area accounts for the whole cell piece back side gross area is 0.8%.
The present embodiment arranges three main gate line in the design of point-like back electrode, as shown in Figure 4, first complete the printing of Spot electrodes, carry out the printing of three main gate line again, also Spot electrodes and main gate line can be printed simultaneously, on the surface of three main gate line, no longer aluminium lamination is set, namely aluminium lamination covers the remaining area on backside passivation layer except main gate line and Spot electrodes surface, and main gate line contacts with aluminium lamination, the solid main grid that three main gate line adopt the 1.2mm that generally uses wide, the percentage that main grid area accounts for whole cell piece backside area is 2.3%.
Three main gate line can be arranged on the surface of Spot electrodes, also can be set directly at the surface of backside passivation layer, can also be arranged on the part surface of Spot electrodes and backside passivation layer simultaneously.
Wherein backside passivation layer is SiO
2layer passivation reflection enhancing coating, adopt board-like PECVD to make, film thickness monitoring is at about 180nm.
In the present embodiment, back aluminium lamination adopts vacuum evaporation plated film mode to make aluminium lamination, the thickness of aluminium lamination is 0.5mm, aluminium lamination is arranged on other whole regions N-type silicon crystal back surface removed outside main gate line, and the aluminium membrane material of deposition requires that electric conductivity is good, can not damage SiNx deielectric-coating after sintering.
The preparation method of the back electrode structure of the present embodiment above-mentioned N-type crystalline silicon solar cell is as follows: choose N-type crystalline silicon sheet, through routine two-sided making herbs into wool, front boron diffusion, the back side phosphorus diffusion, front plating Al
2o
3after passivation layer and SiNx antireflective coating, overleaf phosphorus-diffused layer adopts that board-like PECVD prepares backside passivation layer, silk screen printing front silver aluminium paste and oven dry, silk screen printing back electrode Spot electrodes and oven dry, silk screen printing three main gate line and oven dry, vacuum evaporation plated film prepare aluminium lamination, last co-sintering again, be prepared into the backplate of N-type crystalline silicon solar cell.
embodiment 4
As shown in Figure 1, a kind of back electrode structure of N-type crystalline silicon solar cell, comprise N-type crystalline silicon sheet, phosphorus-diffused layer 5 is provided with at N-type crystalline silicon sheet 4 back surface, phosphorus-diffused layer 5 is provided with backside passivation layer 6, be provided with the Spot electrodes 7 contacted with phosphorus-diffused layer 5 through backside passivation layer 6 overleaf in passivation layer 6, the regional area on passivation layer 6 surface is provided with aluminium lamination 8 overleaf.
Also be provided with front diffused layer of boron 3 at the front surface of N-type crystalline silicon sheet 4, diffused layer of boron 3 is provided with Al
2o
3passivation layer 2, at Al
2o
3passivation layer 2 is provided with front SiNx antireflection layer 1.
Back electrode point cantact adopts distribution pattern as shown in Figure 5, be made up of the multiple Spot electrodes unit in array distribution, the spacing of adjacent two Spot electrodes unit is identical, wherein the adjacent two Spot electrodes cell distribution of odd-numbered line two are at same row, even number line two consecutive points shape electrode unit is distributed in another row, and this two row Spot electrodes unit does not coincide, also can be understood as with equilateral triangle or regular hexagon vertex position for unit, matrix is expanded to the whole cell piece back side.
In the present embodiment, the shape of back electrode Spot electrodes unit is circular, and diameter is 0.18mm, and dot spacing is 1.7mm, and the percentage that Spot electrodes cellar area accounts for the whole cell piece back side gross area is 1.0%.
The present embodiment is provided with three main gate line in the design of point-like back electrode, first completes the printing of Spot electrodes, then carries out the printing of three main gate line.On the surface of three main gate line, no longer aluminium lamination is set, namely aluminium lamination covers the remaining area on backside passivation layer except main gate line and Spot electrodes surface, and main gate line contacts with described aluminium lamination, the solid main grid that three main gate line adopt the 1.2mm that generally uses wide, the percentage that main grid area accounts for whole cell piece backside area is 2.3%.
Three main gate line can be arranged on the surface of Spot electrodes, also can be set directly at the surface of backside passivation layer, can also be arranged on the part surface of Spot electrodes and backside passivation layer simultaneously.
Wherein backside passivation layer is SiNx/SiO
2composite bed passivation reflection enhancing coating, adopt PVD to make, film thickness monitoring is at about 100nm.
In the present embodiment, back aluminium lamination adopts ion beam sputtering deposition to make, aluminum layer thickness is about 0.6mm, passivating film is arranged on other whole regions N-type silicon crystal back surface removed outside main gate line, and the aluminium membrane material of deposition requires that electric conductivity is good, can not damage SiNx deielectric-coating after sintering.
The preparation method of the back electrode structure of the present embodiment above-mentioned N-type crystalline silicon solar cell is as follows: choose N-type crystalline silicon sheet, through routine two-sided making herbs into wool, front boron diffusion, the back side phosphorus diffusion, front plating Al
2o
3after passivation layer and SiNx antireflective coating, overleaf phosphorus-diffused layer adopts that PVD prepares backside passivation layer, silk screen printing front silver aluminium paste and oven dry, silk screen printing back electrode Spot electrodes and oven dry, silk screen printing three main gate line and oven dry, ion beam sputtering deposition prepare aluminium lamination, last co-sintering again, be prepared into the backplate of N-type crystalline silicon solar cell.
embodiment 5
As different from Example 1, the diameter of back electrode Spot electrodes unit is 0.24mm, and spacing is 1.0mm, and the percentage that Spot electrodes cellar area accounts for whole cell piece backside area is 4.5%; Back aluminium lamination adopts physical vapor deposition (PVD) film deposition techniques, and cover the whole cell piece back side, the thickness of back side aluminium lamination is 0.004mm.
embodiment 6
As different from Example 2, the diameter of back electrode Spot electrodes unit is 0.20mm, and spacing is 0.8mm, and the percentage that Spot electrodes cellar area accounts for whole cell piece backside area is 5.7%; Back aluminium lamination adopts physical vapor deposition (PVD) film deposition techniques, and cover the whole cell piece back side, its thickness is 0.08mm.
The above embodiment of the present invention is not limiting the scope of the present invention; embodiments of the present invention are not limited thereto; all this kind is according to foregoing of the present invention; according to ordinary technical knowledge and the customary means of this area; do not departing under the present invention's above-mentioned basic fundamental thought prerequisite; to hindering the amendment of other various ways of making of said structure, replacement or change, all should drop within protection scope of the present invention.
Claims (10)
1. the back electrode structure of a N-type crystalline silicon solar cell, comprise N-type crystalline silicon sheet, it is characterized in that: be provided with phosphorus-diffused layer at described N-type crystalline silicon sheet back surface, described phosphorus-diffused layer is provided with backside passivation layer, in described backside passivation layer, be provided with the Spot electrodes contacted with described phosphorus-diffused layer through described backside passivation layer, the Zone Full on described backside passivation layer surface and described Spot electrodes surface or regional area are provided with aluminium lamination.
2. the back electrode structure of N-type crystalline silicon solar cell according to claim 1, it is characterized in that: described Spot electrodes is made up of the multiple Spot electrodes unit in array distribution, the spacing of adjacent two Spot electrodes unit is identical, and wherein odd-numbered line and even number line two consecutive points shape electrode unit are distributed in same row.
3. the back electrode structure of N-type crystalline silicon solar cell according to claim 1, it is characterized in that: described Spot electrodes is made up of the multiple Spot electrodes unit in array distribution, the spacing of adjacent two Spot electrodes unit is identical, wherein odd-numbered line two consecutive points shape electrode unit is distributed in same row, even number line two consecutive points shape electrode unit is distributed in another row, and this two row Spot electrodes unit does not coincide.
4. the back electrode structure of the N-type crystalline silicon solar cell according to Claims 2 or 3, is characterized in that: described Spot electrodes unit is for circular, and the diameter of described circle is 0.01 ~ 2mm, and the spacing of adjacent two Spot electrodes unit is 0.05 ~ 10mm.
5. the back electrode structure of N-type crystalline silicon solar cell according to claim 4, is characterized in that: the diameter of described circle is 0.01 ~ 0.5mm, and the spacing of adjacent two Spot electrodes unit is 0.05 ~ 5mm.
6. the backplate of the N-type crystalline silicon solar cell according to any one of claim 1-5, it is characterized in that: be also provided with main gate line on the surface on described backside passivation layer surface and described Spot electrodes, in described backside passivation layer and described Spot electrodes, the remaining area on the surface except main gate line is provided with aluminium lamination, and described main gate line contacts with described aluminium lamination.
7. the back electrode structure of N-type crystalline silicon solar cell according to claim 1, is characterized in that: described backside passivation layer is SiNx layer, SiO
2layer or SiNx/SiO
2composite bed.
8. the back electrode structure of N-type crystalline silicon solar cell according to claim 7, is characterized in that: the thickness of described backside passivation layer is 10 ~ 200nm, adopts PECVD or PVD mode to make.
9. the back electrode structure of N-type crystalline silicon solar cell according to claim 1, it is characterized in that: adopt screen printing mode to make aluminium lamination, the thickness of the aluminium lamination made is 0.0005 ~ 2mm, or adopt PVD mode to make aluminium lamination, the thickness of the aluminium lamination made is 0.0005 ~ 1mm, and described PVD mode comprises vacuum evaporation plated film, ion beam sputtering deposition or electron beam transpiration plated film.
10. the preparation method of the back electrode structure of the N-type crystalline silicon solar cell according to any one of claim 1-5, comprise and choose N-type crystalline silicon sheet, it is characterized in that further comprising the steps of: carry out phosphorus at the back surface of described N-type crystalline silicon sheet and spread to obtain phosphorus-diffused layer, described phosphorus-diffused layer arranges backside passivation layer, described backside passivation layer prints Spot electrodes and dries, Zone Full again on described backside passivation layer surface and described Spot electrodes surface or regional area arrange aluminium lamination and dry, after sintering, described Spot electrodes is through described passivation layer and described phosphorus-diffused layer phase ohmic contact, be prepared into the back electrode structure of N-type crystalline silicon solar cell.
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| CN106449794A (en) * | 2016-09-21 | 2017-02-22 | 晶澳（扬州）太阳能科技有限公司 | Efficient N-type solar cell and method for manufacturing cell assembly by using efficient N-type solar cell |
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