CN104465811A - Local back surface field n type solar cell - Google Patents
Local back surface field n type solar cell Download PDFInfo
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- CN104465811A CN104465811A CN201410638596.8A CN201410638596A CN104465811A CN 104465811 A CN104465811 A CN 104465811A CN 201410638596 A CN201410638596 A CN 201410638596A CN 104465811 A CN104465811 A CN 104465811A
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- 229910052751 metal Inorganic materials 0.000 claims abstract description 85
- 239000002184 metal Substances 0.000 claims abstract description 85
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 47
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 47
- 239000010703 silicon Substances 0.000 claims abstract description 47
- 239000000758 substrate Substances 0.000 claims description 44
- 239000011248 coating agent Substances 0.000 claims description 12
- 238000000576 coating method Methods 0.000 claims description 12
- 238000009826 distribution Methods 0.000 claims description 5
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 4
- 229910052796 boron Inorganic materials 0.000 claims description 4
- 238000009792 diffusion process Methods 0.000 claims description 4
- 238000005468 ion implantation Methods 0.000 claims description 4
- 229910052698 phosphorus Inorganic materials 0.000 claims description 4
- 239000011574 phosphorus Substances 0.000 claims description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 10
- 229910052709 silver Inorganic materials 0.000 description 10
- 239000004332 silver Substances 0.000 description 10
- 239000002131 composite material Substances 0.000 description 7
- 239000011159 matrix material Substances 0.000 description 7
- 238000002161 passivation Methods 0.000 description 7
- 238000007639 printing Methods 0.000 description 7
- 239000002002 slurry Substances 0.000 description 6
- 239000000443 aerosol Substances 0.000 description 5
- 238000000059 patterning Methods 0.000 description 5
- 238000007650 screen-printing Methods 0.000 description 5
- 238000005245 sintering Methods 0.000 description 5
- 238000012360 testing method Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 230000003667 anti-reflective effect Effects 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
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- 238000006243 chemical reaction Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000007772 electrode material Substances 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
The invention discloses a local back surface field n type solar cell. The local back surface field n type solar cell comprises an n type silicon base body. A p+ emitter region, a front surface dielectric layer and a positive electrode metal electrode are arranged on the front surface of the n type silicon base body; an n+ back surface field, a back surface dielectric layer and a negative electrode metal electrode are arranged on the back surface of the n type silicon base body; the n+ back surface field is a local n+ back surface field formed by a selective n+ doping region. According to the n type solar cell, due to the fact that a local back surface field structure is adopted, minority carrier combination caused by back surface field doping can be greatly reduced. Compared with an original common full back surface field n type solar cell, the open-circuit voltage of the cell can be greatly improved, and the short-circuit current is improved to some degree.
Description
Technical field
The invention belongs to area of solar cell, be specifically related to a kind of local back surface field N-shaped solar cell.
Background technology
Solar cell is a kind of is the semiconductor device of electric energy by light energy conversion, and lower production cost and higher energy conversion efficiency are the targets that solar cell industry is pursued always.It is high that N-shaped solar cell has body life time, the advantages such as illumination is undamped, it is the important developing direction of efficient crystal silicon solar batteries one, and the positive and negative electrode due to N-shaped solar cell can be made into conventional H-type gate line electrode structure, therefore this battery not only can absorb light in front, and its back surface also can absorb reflection and scattered light thus produce extra electric power.
The emitter region of N-shaped solar cell front surface is the doping of p+ type, back surface field is the doping of n+ type, good ohmic contact is all formed in order to make the metal electrode of solar cell and emitter and back surface field, the p+ type doping of battery front surface and the n+ type doping of back surface often require heavy doping, namely higher doping content is had, but these heavily doped p+ emitter regions and n+ back surface field can bring higher Auger compound, thus reduce open circuit voltage and the short circuit current of battery, affect the phototranstormation efficiency of battery.
Summary of the invention
The object of the present invention is to provide a kind of local back surface field N-shaped solar cell, the back surface field on this battery back surface is the local n formed by optionally n+ type doped region
+back surface field, can reduce the high recombination-rate surface that back surface field causes due to heavy doping, increases open circuit voltage and the short circuit current of battery, thus promotes the phototranstormation efficiency of battery.
Above-mentioned purpose of the present invention is achieved through the following technical solutions: a kind of local back surface field N-shaped solar cell, comprise N-shaped silicon substrate, the front surface of N-shaped silicon substrate is provided with p+ emitter region, front surface dielectric layer and cathode metal electrode, the back surface of N-shaped silicon substrate is provided with n+ back surface field, back surface dielectric layer and negative metal electrode, and described n+ back surface field is the local n+ back surface field formed by optionally n+ doped region.
Local n+ back surface field described in the present invention refers to that the n+ type doping of N-shaped silicon substrate back surface is not the Uniform Doped of whole, but in one dimension wire (namely hereinafter the first preferred embodiment), the selective doping of two-dimentional point-like (namely the second preferred embodiment) hereinafter or other patterning, the n+ type selective doping region of these patternings forms local n+ back surface field.
As of the present invention the first preferred embodiment, local of the present invention n+ back surface field is made up of the bar shaped n+ doped region that many that are evenly located on described N-shaped silicon substrate back surface parallel setting.
The width of bar shaped n+ doped region of the present invention is preferably 30 ~ 500 μm, and the spacing of adjacent two bar shaped n+ doped regions is preferably 60 ~ 3000 μm, and the area of whole bar shaped n+ doped regions accounts for less than 50% of the whole N-shaped silicon substrate back surface gross area.
As the second of the present invention preferred embodiment, the n+ doped region that local of the present invention n+ back surface field is distributed by the spotted array be evenly located on described N-shaped silicon substrate back surface forms.
In the n+ doped region of spotted array distribution of the present invention, the diameter of each point-like unit is 30 ~ 2000 μm, the spacing of adjacent point-like unit is preferably 50 ~ 4000 μm, and the area of the n+ doped region of whole spotted array distributions accounts for less than 50% of the whole N-shaped silicon substrate back surface gross area.
N+ type doped region wherein in two-dimentional point-like array distribution is evenly distributed on the back surface of N-shaped silicon substrate.
Except above-mentioned two kinds preferred embodiment except, other pattern can also be adopted to carry out selective doping, and the n+ type of these patternings selects doped region to form local n+ back surface field.
The resistivity of N-shaped silicon substrate of the present invention is preferably 0.5 ~ 30 Ω cm, and thickness is preferably 50 ~ 300 μm, first through surface wool manufacturing process before using.
P+ emitter region of the present invention is preferably formed by the p+ type doped region covering the whole front surface of silicon substrate, and described p+ type emitter region is by being formed in N-shaped silicon substrate front surface doped with boron.
Described local n+ type back surface field is by being formed at N-shaped silicon substrate back surface selective doping phosphorus, and described doping way is thermal diffusion, ion implantation or laser doping.
Front surface dielectric layer of the present invention is arranged on described silicon substrate front surface p+ emitter region, does not arrange on the region of n+ back surface field in the n+ back surface field that described back surface dielectric layer is arranged on described silicon substrate back surface and on described silicon substrate back surface.
Front surface dielectric layer of the present invention and back surface dielectric layer are one or more in AlO, SiN and SiO deielectric-coating.
Specifically, the front surface dielectric layer covered on p+ emitter region preferentially elects AlO and SiN composite dielectric film as, for passivation and the optics antireflective of front surface, the dielectric layer covered on silicon substrate back surface n+ back surface field and the non-doped region of back surface is preferably the SiN deielectric-coating of individual layer, also can be AlO and SiO composite dielectric film, or AlO and SiN composite dielectric film, for the passivation of back surface.
The thin grid line of cathode metal that cathode metal electrode of the present invention comprises perpendicular setting and cathode metal main gate line, described negative metal electrode comprises the thin grid line of negative metal and negative metal main gate line, the thin grid line of wherein said negative metal and described n+ back surface field phase ohmic contact, the shape of described negative metal main gate line is corresponding with described cathode metal main gate line with position; Or described negative metal electrode is the thin metal layer that whole face covers on silicon substrate back surface, described negative metal thin layer electrode and described n+ back surface field phase ohmic contact, but with described back surface on the exposed region not phase ohmic contact of n+ back surface field is not set.
Cathode metal electrode shape in the present invention is preferably the metal electrode of the H-pattern of conventional n-type or p-type used in battery in the market, the electrode of this H-pattern comprises the thin grid line of orthogonal cathode metal and cathode metal main gate line two parts, the p+ emitter region phase ohmic contact of the thin grid line of cathode metal and silicon substrate front surface, be used for collecting the photoelectric current that battery light produces, cathode metal main gate line contacts with thin grid line, be responsible for the current delivery collected in external circuit, the material of cathode metal electrode is generally silver, by modes such as silk screen printing or aerosol printings, silver slurry is printed on battery front surface, cathode metal electrode is formed through sintering.
Negative metal electrode in the present invention can comprise the thin grid line of negative metal for collecting photogenerated current and be used for current delivery negative metal main gate line two parts to external circuit, the wherein n+ back surface field phase ohmic contact of the thin grid line of negative metal and battery back surface patterning, therefore its shape need is consistent with the n+ back surface field shape of battery back surface patterning, shape and the position precedence requirement of negative metal main gate line are corresponding with the main gate line of cathode metal electrode, to measure, electrode material is preferably silver, by the battery back surface of the modes such as silk screen printing or aerosol printing by the printing of silver slurry, through sintering with n+ back surface field ohmic contact to form negative metal electrode, due to the employing of back side negative metal electrode is grid line form, therefore battery is that the back side also can the double-side cell of light.
Negative metal electrode in the present invention also can cover battery back surface for the thin metal layer of whole, but require that the position corresponding with back surface local n+ back surface field forms ohmic contact, ohmic contact is not formed with the N-shaped matrix not arranging n+ back surface field, the N-shaped solar cell made of this electrode metallization scheme is all covered by metal electrode due to the back side, cannot light, therefore this local back surface field N-shaped solar cell is one side battery.
Because the set-up mode of negative metal electrode is above different, therefore local back surface field N-shaped solar cell of the present invention can be the double-side cell of the equal light of front and rear surfaces or the one side battery only having front surface light.
The invention has the beneficial effects as follows: compared with existing N-shaped battery structure, local back surface field N-shaped solar cell in the present invention forms local n+ back surface field owing to adopting the n+ region of local doping, the high surface recombination because back surface field heavy doping brings can be reduced greatly, thus improve the open circuit voltage of battery, short circuit current also has a certain upgrade simultaneously, experimental result shows, the open circuit voltage of 6 inches of local back surface field N-shaped solar cells compares compared with 6 inches of full back surface field conventional n-type solar cells the lifting having 10 ~ 20mV, short-circuit current density has 0.3 ~ 1 mA/cm
2lifting, this test adopts transient state solar simulator to test, and be IEC61215:2005 the 10.6th clause with reference to testing standard, test condition is standard test condition.
The features and advantages of the present invention are provided in following further describing with preferred illustrative embodiment by reference to the accompanying drawings.
Accompanying drawing explanation
Fig. 1 is the structural representation of the local back surface field N-shaped solar cell of double-side photic in embodiment 1;
Fig. 2 is the local n+ back surface field schematic diagram of one-dimentional structure in embodiment 1;
Fig. 3 is the structural representation of the local back surface field N-shaped solar cell of one side light in embodiment 2;
Fig. 4 is the local n+ back surface field schematic diagram of two-dimensional structure in embodiment 2;
Accompanying drawing illustrates: 10, N-shaped crystalline silicon substrates; 12, front surface p+ emitter region; 14, back surface local n+ back surface field; 16, AlO deielectric-coating; 18, front surface S iN deielectric-coating; 20, back surface SiN deielectric-coating; 22, positive electrode gate linear contact lay electrode; 24, negative electrode grid linear contact lay electrode.26, negative metal thin layer electrode.
Embodiment
embodiment 1
As shown in Figure 1, present embodiments provide a kind of local back surface field N-shaped solar cell of double-side photic, comprise N-shaped silicon substrate 10, be located at the p+ emitter region 12 of silicon substrate front surface and be located at the local n+ back surface field 14 of silicon substrate back surface, the p+ emitter region 12 of front surface is the p+ type doped region of whole, the back surface field of back surface be optionally local n+ type doped region to form locally n+ back surface field 14, local n+ back surface field 14 is made up of (linear structure namely in one dimension is evenly arranged in battery back surface) the bar shaped n+ doped region that many that are evenly located on N-shaped silicon substrate back surface parallel setting, front surface p+ emitter region 12 and back surface locally n+ back surface field 14 and exposed N-shaped matrix 10 are all coated with dielectric layer (or dielectric stack), the dielectric layer covered on p+ emitter region 12 preferentially elects the composite dielectric film of AlO deielectric-coating 16 and SiN deielectric-coating 18 as, for passivation and the optics antireflective of front surface, the dielectric layer covered on back surface local n+ back surface field 14 and exposed N-shaped matrix 10 is preferably the SiN deielectric-coating 20 of individual layer, for the passivation of back surface, p+ emitter region 12 and local n+ back surface field 14 are also respectively equipped with positive electrode gate linear contact lay electrode (i.e. cathode metal electrode) 22 and negative electrode grid linear contact lay electrode (i.e. negative metal electrode) 24, be used for the photoelectric current collected and transmission battery light produces.
As shown in Figure 2, live width for the formation of the n+ doped region of back surface local n+ back surface field 14 is preferably 30 ~ 500 μm, interval between adjacent two n+ doped regions is preferably 60 ~ 3000 μm, and requires that all areas shared by n+ doped region are no more than 50% of battery back surface area.
The resistivity of N-shaped silicon substrate 10 is between 0.5 ~ 30 Ω cm, thickness is between 50 ~ 300 μm, first through surface wool manufacturing process before using, the foreign atom that front surface p+ doped region 12 mixes is generally boron, the foreign atom that back surface mixes for the formation of local n+ back surface field 14 is generally phosphorus, and doping method is thermal diffusion, ion implantation and laser doping etc.
The metal electrode contacted with p+ emitter region 12 is positive electrode gate linear contact lay electrode 22, electrode shape is preferably the metal electrode of the H-pattern of conventional n-type or p-type used in battery in the market, electrode 22 comprises the thin grid line of orthogonal cathode metal and cathode metal main gate line two parts, the thin grid line of cathode metal is used for collecting the photoelectric current that battery light produces, cathode metal main gate line is responsible for the current delivery collected in external circuit, the material of this metal electrode is generally silver, by modes such as silk screen printing or aerosol printings, silver slurry is printed on battery front surface, cathode metal electrode is formed through sintering.
The metal electrode contacted with battery back surface local n+ back surface field 14 is negative electrode grid linear contact lay electrode 24, electrode 24 is also the metal electrode of H-pattern, comprise the thin grid line of negative metal for collecting photogenerated current and be used for current delivery negative metal main gate line two parts to external circuit, electrode material is preferably silver, by the battery back surface of the modes such as silk screen printing or aerosol printing by the printing of silver slurry, through sintering with local n+ back surface field 14 phase ohmic contact to form negative electrode grid linear contact lay electrode 24, due to the employing of back side negative electrode grid linear contact lay electrode 24 is grid line form, therefore battery is that the back side can the double-side cell of light, thus increase additional power power.
embodiment 2
As shown in Figure 3, present embodiments provide a kind of local back surface field N-shaped solar cell of one side light, comprise N-shaped silicon substrate 10, be located at the p+ emitter region 12 of silicon substrate front surface and be located at the local n+ back surface field 14 of silicon substrate back surface, the p+ emitter region 12 of front surface is the p+ type doped region of whole, the back surface field of back surface be optionally local n+ type doped region to form locally n+ back surface field 14, the n+ doped region that local n+ back surface field 14 is distributed by the spotted array be evenly located on N-shaped silicon substrate back surface forms (the spotted array even structure in two dimension is arranged in battery back surface), front surface p+ emitter region 12 and back surface locally n+ back surface field 14 and exposed N-shaped matrix 10 are all coated with dielectric stack, the dielectric stack covered on p+ emitter region 12 preferentially elects the composite dielectric film of AlO deielectric-coating 16 and SiN deielectric-coating 18 as, for passivation and the optics antireflective of front surface, the dielectric stack covered on back surface n+ local back surface field 14 and the exposed N-shaped matrix 10 of back surface is preferably the SiN deielectric-coating 20 of individual layer, for the passivation of back surface, p+ emitter region 12 and n+ local back surface field 14 are also respectively equipped with positive electrode gate linear contact lay electrode (i.e. cathode metal electrode) 22 and negative electrode grid linear contact lay electrode (i.e. negative metal electrode) 26, be used for the photoelectric current collected and transmission battery light produces.
As shown in Figure 4, the back surface n+ doped region being used for being formed local n+ back surface field 14 is two-dimentional point-like array structure, the n+ type doped region of point-like is evenly distributed on battery back surface, the diameter of point is preferably 30 ~ 2000 μm, spacing is between points preferably 50 ~ 4000um, and requires that all areas shared by the n+ doped region of local are no more than 50% of battery back surface area.
The resistivity of N-shaped silicon substrate 10 is preferably 0.5 ~ 30 Ω cm, thickness is 50 ~ 300 μm, first through surface wool manufacturing process before using, the foreign atom that front surface p+ doped region 12 mixes is generally boron, the foreign atom that back surface mixes for the formation of n+ local back surface field 14 is generally phosphorus, and doping method is thermal diffusion, ion implantation and laser doping etc.
The metal electrode contacted with p+ emitter region 12 is positive electrode gate linear contact lay electrode 22, electrode shape is preferably the metal electrode of the H-pattern of conventional n-type or p-type used in battery in the market, electrode 22 comprises the thin grid line of orthogonal cathode metal and cathode metal main gate line two parts, the thin grid line of cathode metal is used for collecting the photoelectric current that battery light produces, cathode metal main gate line is responsible for the current delivery collected in external circuit, the material of this metal electrode is generally silver, by modes such as silk screen printing or aerosol printings, silver slurry is printed on battery front surface, cathode metal electrode is formed through sintering.
The metal electrode contacted with battery back surface local n+ back surface field 14 is negative metal thin layer electrode 26, this negative metal thin layer electrode 26 is that the thin metal layer of whole covers battery back surface, require to form ohmic contact with the local n+ back surface field 14 of back surface point-like, but do not form ohmic contact with the unadulterated N-shaped matrix 10 of back surface, the N-shaped solar cell made of this metallization scheme is all covered by metal due to the back side, cannot light, therefore this local back surface field N-shaped solar cell is one side battery, negative metal thin layer electrode 26 material is preferably aluminium, can by the method for physical vapor deposition (PVD) by negative metal electrode deposition to battery back surface, ohmic contact between itself and n+ local back surface field 14 can be realized by the mode of laser beam drilling or slurry perforate.
embodiment 3
With embodiment 1 and embodiment 2 unlike, the dielectric stack covered on the local n+ back surface field 14 of back surface and the unadulterated N-shaped matrix 10 of back surface is AlO and SiO composite dielectric film, or AlO and SiN composite dielectric film, for the passivation of back surface.
Above-described embodiment is the present invention's preferably execution mode; but embodiments of the present invention are not restricted to the described embodiments; change, the modification done under other any does not deviate from Spirit Essence of the present invention and principle, substitute, combine, simplify; all should be the substitute mode of equivalence, be included in protection scope of the present invention.
Claims (10)
1. a local back surface field N-shaped solar cell, comprise N-shaped silicon substrate, the front surface of N-shaped silicon substrate is provided with p+ emitter region, front surface dielectric layer and cathode metal electrode, the back surface of N-shaped silicon substrate is provided with n+ back surface field, back surface dielectric layer and negative metal electrode, it is characterized in that: described n+ back surface field is the local n+ back surface field formed by optionally n+ doped region.
2. local back surface field N-shaped solar cell according to claim 1, is characterized in that: described local n+ back surface field is made up of the bar shaped n+ doped region that many that are evenly located on described N-shaped silicon substrate back surface parallel setting.
3. local back surface field N-shaped solar cell according to claim 2, it is characterized in that: the width of described bar shaped n+ doped region is 30 ~ 500 μm, the spacing of adjacent two bar shaped n+ doped regions is 60 ~ 3000 μm, and the area of whole bar shaped n+ doped regions accounts for less than 50% of the whole N-shaped silicon substrate back surface gross area.
4. local back surface field N-shaped solar cell according to claim 1, is characterized in that: the n+ doped region that described local n+ back surface field is distributed by the spotted array be evenly located on described N-shaped silicon substrate back surface forms.
5. local back surface field N-shaped solar cell according to claim 4, it is characterized in that: in the n+ doped region of described spotted array distribution, the diameter of each point-like unit is 30 ~ 2000 μm, the spacing of adjacent point-like unit is 50 ~ 4000 μm, and the area of the n+ doped region of whole spotted array distributions accounts for less than 50% of the whole N-shaped silicon substrate back surface gross area.
6. the local back surface field N-shaped solar cell according to any one of claim 1-5, it is characterized in that: described p+ emitter region is formed by the p+ type doped region covering the whole front surface of silicon substrate, described p+ type emitter region is by being formed in N-shaped silicon substrate front surface doped with boron, described local n+ type back surface field is by being formed at N-shaped silicon substrate back surface selective doping phosphorus, and described doping way is thermal diffusion, ion implantation or laser doping.
7. local back surface field N-shaped solar cell according to claim 6, it is characterized in that: described front surface dielectric layer is arranged on described silicon substrate front surface p+ emitter region, do not arrange on the exposed region of n+ back surface field in the n+ back surface field that described back surface dielectric layer is arranged on described N-shaped silicon substrate back surface and on described N-shaped silicon substrate back surface.
8. local back surface field N-shaped solar cell according to claim 7, is characterized in that: described front surface dielectric layer and back surface dielectric layer are one or more in AlO, SiN and SiO deielectric-coating.
9. local back surface field N-shaped solar cell according to claim 1, it is characterized in that: described cathode metal electrode comprises the thin grid line of cathode metal and the cathode metal main gate line of perpendicular setting, the thin grid line of described cathode metal and described p+ emitter region phase ohmic contact, described negative metal electrode comprises the thin grid line of negative metal and negative metal main gate line, the thin grid line of wherein said negative metal and described n+ back surface field phase ohmic contact, the shape of described negative metal main gate line is corresponding with the cathode metal main gate line in described cathode metal electrode with position, or described negative metal electrode is the thin metal layer that whole face covers on silicon substrate back surface, described negative metal thin layer electrode and described local n+ back surface field phase ohmic contact, but with described back surface on the region not phase ohmic contact of n+ back surface field is not set.
10. local back surface field N-shaped solar cell according to claim 9, is characterized in that: described local back surface field N-shaped solar cell is the double-side cell of the equal light of front and rear surfaces or only has the one side battery of front surface light.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201410638596.8A CN104465811A (en) | 2014-11-13 | 2014-11-13 | Local back surface field n type solar cell |
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| CN201410638596.8A CN104465811A (en) | 2014-11-13 | 2014-11-13 | Local back surface field n type solar cell |
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| CN104465811A true CN104465811A (en) | 2015-03-25 |
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| CN105845776A (en) * | 2016-04-26 | 2016-08-10 | 泰州中来光电科技有限公司 | Local back surface N-type photovoltaic cell preparation method, local back surface N-type photovoltaic cell, local back surface N-type photovoltaic cell assembly and local back surface N-type photovoltaic cell system |
| CN106098807A (en) * | 2016-06-27 | 2016-11-09 | 泰州乐叶光伏科技有限公司 | A kind of N-type crystalline silicon solar battery structure and preparation method thereof |
| CN107845692A (en) * | 2016-09-20 | 2018-03-27 | 上海神舟新能源发展有限公司 | A kind of preparation method of modified back side tunnel oxidation passivation contact high-efficiency battery |
| CN110176520A (en) * | 2019-05-28 | 2019-08-27 | 晶澳（扬州）太阳能科技有限公司 | The preparation method of local back surface field back passivation solar battery |
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