CN109560145A - A kind of solar cell Al-BSF structure - Google Patents
A kind of solar cell Al-BSF structure Download PDFInfo
- Publication number
- CN109560145A CN109560145A CN201811649146.3A CN201811649146A CN109560145A CN 109560145 A CN109560145 A CN 109560145A CN 201811649146 A CN201811649146 A CN 201811649146A CN 109560145 A CN109560145 A CN 109560145A
- Authority
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- China
- Prior art keywords
- plate
- bsf
- antireflective coating
- front electrode
- solar cell
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- Pending
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 32
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 31
- 239000010703 silicon Substances 0.000 claims abstract description 31
- 239000006117 anti-reflective coating Substances 0.000 claims abstract description 26
- 230000001681 protective effect Effects 0.000 claims abstract description 18
- 229910021419 crystalline silicon Inorganic materials 0.000 claims abstract description 16
- 229910052782 aluminium Inorganic materials 0.000 claims description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 8
- 239000004411 aluminium Substances 0.000 claims description 8
- 239000000126 substance Substances 0.000 claims 1
- 230000002745 absorbent Effects 0.000 abstract description 2
- 239000002250 absorbent Substances 0.000 abstract description 2
- 230000005684 electric field Effects 0.000 abstract description 2
- 238000006243 chemical reaction Methods 0.000 description 5
- 230000005611 electricity Effects 0.000 description 5
- 239000000463 material Substances 0.000 description 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 3
- 230000009466 transformation Effects 0.000 description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- 208000019155 Radiation injury Diseases 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910052684 Cerium Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- 241001080929 Zeugopterus punctatus Species 0.000 description 1
- 230000003667 anti-reflective effect Effects 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 239000011669 selenium Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000005303 weighing Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- H01L31/0682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells back-junction, i.e. rearside emitter, solar cells, e.g. interdigitated base-emitter regions back-junction cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
Abstract
The invention discloses a kind of solar cell Al-BSF structures, including antireflective coating, the top of the antireflective coating is equipped with front electrode, and front electrode is located at the top inner side position of antireflective coating, there are four settings, protective plate is provided on the front electrode, there are four settings, the bottom end of the antireflective coating is equipped with N-type silicon plate, the bottom end of the N-type silicon plate is equipped with crystalline silicon plate, the present invention is in order to improve the performance of single solar cell, take shallow junction, close grid, carry on the back electric field, back reflection, the measures such as flannelette and multilayer film, increase the pad that single battery area advantageously reduces solar battery array, improve reliability, enhance the absorbability of this battery simultaneously, silk screen and block are provided in the present invention, external Al-BSF consumption is further reduced by block and silk screen, to reduce cost, increase of the invention Service life increases its absorbent properties.
Description
Technical field
This application involves solar cell field is related to, specially a kind of solar cell Al-BSF structure.
Background technique
Solar cell can effectively absorb solar energy, and convert it into the semiconductor component of electric energy, with Ban conductor Gui ﹑ selenium
The luminous energy of the sun is become the device of electric energy by equal materials, and there is the excellent point ﹐ such as the property leaned on high ﹐ service life long ﹐ transfer efficiency height can conduct oneself
Make the power supply of Wei Xing ﹑ boat mark lamp ﹑ transistor etc., single battery size is defeated from 1 × 1 centimetre to 15.6 × 15.6 centimetre
Power is tens of persons of outstanding talent watt to several watts out, its theoretical light photoelectric transformation efficiency is 25% or more, actually has reached 22% or more, the sun
Energy battery is a kind of device that electric energy is converted optical energy into using photovoltaic effect, is called photovoltaic device, mainly there is monocrystalline silicon
Battery and single crystalline gallium arsenide battery etc., solar cell are initially that space device uses, space device monocrystalline silicon sun electricity
The basic material in pond is p type single crystal silicon of the purity up to 0.999999, resistivity in 10 Europe centimetre or more, including p-n junction, electrode
With the parts such as antireflective coating, light is shown up plus light transmission cover plate (such as quartz or seeping cerium glass) protection, prevents battery by outer space
The radiation injury of high energy electron and proton in Van Allen belt, single battery size is from 2 × 2 centimetres to 5.9 × 5.9 centimetre, output
Power is tens of to hundreds of milliwatts, its theoretical light photoelectric transformation efficiency is 20% or more, actually has reached 15% or more, monocrystalline arsenic
The theoretical light photoelectric transformation efficiency for changing gallium solar cell is 24%, actually reaches 18%.It can work under high temperature, high light intensity, resistance to
Radiation injury ability is higher than silicon solar cell, but the yield of gallium is less, at high cost, and cascade p-n junction solar cell is served as a contrast at one piece
It is superimposed the p-n junction of multiple and different band gap materials on bottom, the big top knot of band gap leans on plane of illumination, absorbs short wavelength light, and band gap is successively down
Reduce, the optical wavelength of absorption gradually increases, and this battery can make full use of daylight, and photoelectric conversion efficiency greatly improves.
There are many shortcomings for a kind of solar cell of current stage, such as: absorbability is poor, it is adaptable,
Performance is bad etc..
Summary of the invention
It is mentioned above in the background art to solve the purpose of the present invention is to provide a kind of solar cell Al-BSF structure
The problems such as absorbability is poor, adaptable, performance is bad.
To achieve the above object, the invention provides the following technical scheme: a kind of solar cell Al-BSF structure, including anti-reflection
Film is penetrated, the top of the antireflective coating is equipped with front electrode, and front electrode is located at the top inner side position of antireflective coating, if
There are four setting, protective plate is provided on the front electrode, and protective plate is located at the apical position of front electrode, is provided with four
A, the bottom end of the antireflective coating is equipped with N-type silicon plate, and the bottom end of the N-type silicon plate is equipped with crystalline silicon plate, the crystalline silicon
The bottom end of plate is equipped with PN junction plate, and the bottom end of the PN junction plate is equipped with P-type silicon plate, and the bottom end of the P-type silicon plate is equipped with aluminium
Back surface field plate, one end of the Al-BSF plate are equipped with connecting plate, and the top of the connecting plate is equipped with rear electrode, the aluminium back
It is provided with silk screen on field plate, block is installed, and there are two block settings on the inside of the silk screen.
Preferably, the protective plate is structure as a whole with front electrode setting, and protective plate is located at the top of antireflective coating
Position.
Preferably, the antireflective coating is fixedly connected with front electrode, and front electrode is located at the centre on antireflective coating
At the two sides of position.
Preferably, the N-type silicon plate is fixedly connected with crystalline silicon plate, and crystalline silicon plate is fixedly connected with PN junction plate.
Preferably, the P-type silicon is fixedly connected with Al-BSF plate, and Al-BSF plate is fixedly connected with connecting plate.
Preferably, the silk screen and block are located on Al-BSF plate, and silk screen is structure as a whole with block setting.
Compared with prior art, the beneficial effects of the present invention are:
1, the present invention is to improve the performance of single solar cell, take shallow junction, close grid, back electric field, back reflection, flannelette and
The measures such as multilayer film increase the pad that single battery area advantageously reduces solar battery array, improve reliability, while making this
The absorbability of battery enhances, and is provided with silk screen and block in the present invention, further reduced by block and silk screen outside
Al-BSF consumption increases service life of the invention to reduce cost, increases its absorbent properties；
2, it is provided with protective plate on front electrode of the present invention, front electrode can be protected by protective plate, to prolong
The service life of long front electrode promotes its working performance, extends service life of the invention.
Detailed description of the invention
Fig. 1 is the structural diagram of the present invention；
Fig. 2 is right view of the invention；
Fig. 3 is the structural schematic diagram of Al-BSF plate of the invention.
Wherein: 1, N-type silicon plate；2, PN junction plate；3, P-type silicon plate；4, Al-BSF plate；5, protective plate；6, front electrode；7, subtract
Reflectance coating；8, crystalline silicon plate；9, rear electrode；10, connecting plate；11, silk screen；12, block.
Specific embodiment
Below in conjunction with the attached drawing in the embodiment of the present application, to the technical solution in embodiment carry out it is clear, completely retouch
It states, it is clear that described embodiments are only a part of embodiments of the present application, instead of all the embodiments.Based on the application
In embodiment, the every other embodiment that those of ordinary skill in the art obtain without making creative work,
It shall fall in the protection scope of this application.
Fig. 1-3 is please referred to, a kind of embodiment provided by the invention: a kind of solar cell Al-BSF structure, including antireflective
Film 7, the top of antireflective coating 7 are equipped with front electrode 6, and front electrode 6 is used to the connection outside the present invention, makes progress of the present invention
Work, and front electrode 6 is located at the top inner side position of antireflective coating 7, there are four settings, and protection is provided on front electrode 6
Plate 5, protective plate 5 are used to protect front electrode 6, prolong its service life front electrode 6, and protective plate 5 is located at front electrode 6
Apical position, there are four settings, and the bottom end of antireflective coating 7 is equipped with N-type silicon plate 1, and N-type silicon plate 1 is used to carry out reflection light,
The present invention is set to carry out absorption luminous energy, the bottom end of N-type silicon plate 1 is equipped with crystalline silicon plate 8, carries out leading for electric energy by crystalline silicon plate 8
Enter, luminous energy is made to be converted to electric energy, the bottom end of crystalline silicon plate 8 is equipped with PN junction plate 2, carries out the flat of electricity conversion by PN junction plate 2
Weighing apparatus makes the current balance of conversion be input to the present invention, and the bottom end of PN junction plate 2 is equipped with P-type silicon plate 3, by P-type silicon plate 3 into
The importing of row electricity, the bottom end of P-type silicon plate 3 are equipped with Al-BSF plate 4, carry out the electric energy on the outside of the present invention by Al-BSF plate 4
Optimization, one end of Al-BSF plate 4 are equipped with connecting plate 10, and connecting plate 10 is used to connect rear electrode 9, the top peace of connecting plate 10
Equipped with rear electrode 9, rear electrode 9 is used to the connection of outside, and silk screen 11 is provided on Al-BSF plate 4, and silk screen 11 is used to reduce
External aluminium paste consumes energy, and block 12 is equipped on the inside of silk screen 11, and block 12 is used to reduce external aluminium paste consumption energy, and
There are two the settings of block 12.
Further, protective plate 5 is structure as a whole with the setting of front electrode 6, and protective plate 5 is located at the top of antireflective coating 7
Position, protective plate 5 are used to protect front electrode 6, increase electric front electrode 6 by service life,.
Further, antireflective coating 7 is fixedly connected with front electrode 6, and front electrode 6 is located at the centre on antireflective coating 7
At the two sides of position, front electrode 6 is fixedly connected by antireflective coating 7 with N-type silicon plate 1.
Further, N-type silicon plate 1 is fixedly connected with crystalline silicon plate 8, and crystalline silicon plate 8 is fixedly connected with PN junction plate 2, N-type silicon
Plate 1 is by the connection of crystalline silicon plate 8 come converting electrical energy.
Further, P-type silicon 3 is fixedly connected with Al-BSF plate 4, and Al-BSF plate 4 is fixedly connected with connecting plate 10, P-type silicon 3
It is fixedly connected by Al-BSF plate 4 with connecting plate 10, for the conversion of electric energy.
Further, silk screen 11 and block 12 are located on Al-BSF plate 4, and silk screen 11 and the setting of block 12 are integrated knot, silk
Net 11 and block 12 are used to reduce the consumption of external aluminium paste.
Working principle: it is inputted in use, carrying out extraneous connection by front electrode 6 and protective plate 5, passes through antireflective coating
7 reflected intensitys for carrying out present invention outside are reduced, and the electric energy of reflected light is carried out by N-type silicon plate 1, is carried out by crystalline silicon plate 8
The importing of electric energy carries out the balance of electricity conversion by PN junction plate 2, and the importing of electricity is carried out by P-type silicon plate 3, is carried on the back by aluminium
Field plate 4 carries out the electric energy optimizing on the outside of the present invention, by silk screen 11 and block 12 reduced on the outside of aluminium paste consumption, pass through
Connecting plate 10 is attached rear electrode 9, to convert electrical energy into away.
It is obvious to a person skilled in the art that invention is not limited to the details of the above exemplary embodiments, Er Qie
In the case where without departing substantially from spirit or essential attributes of the invention, the present invention can be realized in other specific forms.Therefore, no matter
From the point of view of which point, the present embodiments are to be considered as illustrative and not restrictive, and the scope of the present invention is by appended power
Benefit requires rather than above description limits, it is intended that all by what is fallen within the meaning and scope of the equivalent elements of the claims
Variation is included within the present invention.Any reference signs in the claims should not be construed as limiting the involved claims.
Claims (6)
1. a kind of solar cell Al-BSF structure, including antireflective coating (7), it is characterised in that: the top of the antireflective coating (7)
It is equipped with front electrode (6), and front electrode (6) is located at the top inner side position of antireflective coating (7), there are four settings, described
It being provided on front electrode (6) protective plate (5), and protective plate (5) is located at the apical position of front electrode (6), there are four settings,
The bottom end of the antireflective coating (7) is equipped with N-type silicon plate (1), and the bottom end of the N-type silicon plate (1) is equipped with crystalline silicon plate (8),
The bottom end of the crystalline silicon plate (8) is equipped with PN junction plate (2), and the bottom end of the PN junction plate (2) is equipped with P-type silicon plate (3), described
The bottom end of P-type silicon plate (3) is equipped with Al-BSF plate (4), and one end of the Al-BSF plate (4) is equipped with connecting plate (10), described
The top of connecting plate (10) is equipped with rear electrode (9), is provided with silk screen (11), the silk screen on the Al-BSF plate (4)
(11) inside is equipped with block (12), and there are two block (12) settings.
2. a kind of solar cell Al-BSF structure according to claim 1, it is characterised in that: the protective plate (5) with just
Face electrode (6) setting is structure as a whole, and protective plate (5) is located at the apical position of antireflective coating (7).
3. a kind of solar cell Al-BSF structure according to claim 1, it is characterised in that: the antireflective coating (7) with
Front electrode (6) is fixedly connected, and front electrode (6) is located at the middle position two sides on antireflective coating (7).
4. a kind of solar cell Al-BSF structure according to claim 1, it is characterised in that: the N-type silicon plate (1) and crystalline substance
Body silicon plate (8) is fixedly connected, and crystalline silicon plate (8) is fixedly connected with PN junction plate (2).
5. a kind of solar cell Al-BSF structure according to claim 1, it is characterised in that: the P-type silicon (3) and aluminium are carried on the back
Field plate (4) is fixedly connected, and Al-BSF plate (4) is fixedly connected with connecting plate (10).
6. a kind of solar cell Al-BSF structure according to claim 1, it is characterised in that: the silk screen (11) and block
(12) it is located on Al-BSF plate (4), and silk screen (11) is structure as a whole with block (12) setting.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811649146.3A CN109560145A (en) | 2018-12-30 | 2018-12-30 | A kind of solar cell Al-BSF structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811649146.3A CN109560145A (en) | 2018-12-30 | 2018-12-30 | A kind of solar cell Al-BSF structure |
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| Publication Number | Publication Date |
|---|---|
| CN109560145A true CN109560145A (en) | 2019-04-02 |
Family
ID=65872229
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201811649146.3A Pending CN109560145A (en) | 2018-12-30 | 2018-12-30 | A kind of solar cell Al-BSF structure |
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Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08330611A (en) * | 1995-03-30 | 1996-12-13 | Sharp Corp | Si solar cell and manufacture thereof |
| CN102169909A (en) * | 2011-03-04 | 2011-08-31 | 中山大学 | Crystalline silicon solar cell with low series resistor and preparation method thereof |
| CN202120925U (en) * | 2011-07-04 | 2012-01-18 | 常州盛世电子技术有限公司 | Crystalline silicon solar cell |
| CN204109533U (en) * | 2014-08-21 | 2015-01-21 | 广东爱康太阳能科技有限公司 | A kind of aluminium back surface field half tone |
| KR101909821B1 (en) * | 2017-05-22 | 2018-10-18 | 고려대학교 산학협력단 | Method for fabricating electrode of solar cell |
| CN208028070U (en) * | 2017-11-24 | 2018-10-30 | 比亚迪股份有限公司 | A kind of solar battery sheet and battery chip arrays and component |
| CN209822650U (en) * | 2018-12-30 | 2019-12-20 | 无锡赛晶太阳能有限公司 | Solar cell aluminum back surface field structure |
-
2018
- 2018-12-30 CN CN201811649146.3A patent/CN109560145A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08330611A (en) * | 1995-03-30 | 1996-12-13 | Sharp Corp | Si solar cell and manufacture thereof |
| CN102169909A (en) * | 2011-03-04 | 2011-08-31 | 中山大学 | Crystalline silicon solar cell with low series resistor and preparation method thereof |
| CN202120925U (en) * | 2011-07-04 | 2012-01-18 | 常州盛世电子技术有限公司 | Crystalline silicon solar cell |
| CN204109533U (en) * | 2014-08-21 | 2015-01-21 | 广东爱康太阳能科技有限公司 | A kind of aluminium back surface field half tone |
| KR101909821B1 (en) * | 2017-05-22 | 2018-10-18 | 고려대학교 산학협력단 | Method for fabricating electrode of solar cell |
| CN208028070U (en) * | 2017-11-24 | 2018-10-30 | 比亚迪股份有限公司 | A kind of solar battery sheet and battery chip arrays and component |
| CN209822650U (en) * | 2018-12-30 | 2019-12-20 | 无锡赛晶太阳能有限公司 | Solar cell aluminum back surface field structure |
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