CN102169909A - Crystalline silicon solar cell with low series resistor and preparation method thereof - Google Patents
Crystalline silicon solar cell with low series resistor and preparation method thereof Download PDFInfo
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- 238000002360 preparation method Methods 0.000 title claims abstract description 26
- 229910021419 crystalline silicon Inorganic materials 0.000 title abstract 6
- 229910052751 metal Inorganic materials 0.000 claims abstract description 83
- 239000002184 metal Substances 0.000 claims abstract description 83
- 238000002161 passivation Methods 0.000 claims abstract description 29
- 229910052710 silicon Inorganic materials 0.000 claims description 49
- 239000010703 silicon Substances 0.000 claims description 49
- 239000011248 coating agent Substances 0.000 claims description 33
- 238000000576 coating method Methods 0.000 claims description 33
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 21
- 229910052709 silver Inorganic materials 0.000 claims description 21
- 239000004332 silver Substances 0.000 claims description 21
- 229910052782 aluminium Inorganic materials 0.000 claims description 19
- 238000000034 method Methods 0.000 claims description 19
- 239000004411 aluminium Substances 0.000 claims description 15
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 15
- 239000000956 alloy Substances 0.000 claims description 13
- 229910045601 alloy Inorganic materials 0.000 claims description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 9
- 239000000463 material Substances 0.000 claims description 9
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 6
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 6
- 238000001704 evaporation Methods 0.000 claims description 6
- 230000008569 process Effects 0.000 claims description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 5
- 229910006404 SnO 2 Inorganic materials 0.000 claims description 5
- 229910052796 boron Inorganic materials 0.000 claims description 5
- 239000010949 copper Substances 0.000 claims description 5
- 229910052802 copper Inorganic materials 0.000 claims description 5
- 230000008020 evaporation Effects 0.000 claims description 5
- 229910052731 fluorine Inorganic materials 0.000 claims description 5
- 238000007733 ion plating Methods 0.000 claims description 5
- 229910052759 nickel Inorganic materials 0.000 claims description 5
- 238000007747 plating Methods 0.000 claims description 5
- 229910000976 Electrical steel Inorganic materials 0.000 claims description 4
- 229910010413 TiO 2 Inorganic materials 0.000 claims description 4
- 229910052787 antimony Inorganic materials 0.000 claims description 4
- CXKCTMHTOKXKQT-UHFFFAOYSA-N cadmium oxide Inorganic materials [Cd]=O CXKCTMHTOKXKQT-UHFFFAOYSA-N 0.000 claims description 4
- 229910052733 gallium Inorganic materials 0.000 claims description 4
- 229910052732 germanium Inorganic materials 0.000 claims description 4
- 229910044991 metal oxide Inorganic materials 0.000 claims description 4
- 150000004706 metal oxides Chemical class 0.000 claims description 4
- 239000000203 mixture Substances 0.000 claims description 4
- 229910052750 molybdenum Inorganic materials 0.000 claims description 4
- 239000000377 silicon dioxide Substances 0.000 claims description 4
- 239000010935 stainless steel Substances 0.000 claims description 4
- 229910001220 stainless steel Inorganic materials 0.000 claims description 4
- 229910052718 tin Inorganic materials 0.000 claims description 4
- 229910052726 zirconium Inorganic materials 0.000 claims description 4
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 239000010931 gold Substances 0.000 claims description 3
- 238000005229 chemical vapour deposition Methods 0.000 claims description 2
- 229910001092 metal group alloy Inorganic materials 0.000 claims description 2
- 238000002310 reflectometry Methods 0.000 abstract description 5
- 230000005684 electric field Effects 0.000 abstract 2
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- 238000007650 screen-printing Methods 0.000 description 9
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- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 2
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- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
The invention relates to a crystalline silicon solar cell with low series resistor, which comprises a p-n node; a passivation layer, a thin grating metal electrode and a main grating metal electrode are arranged on the front surface of the p-n node, and a back electric field and a back electrode are arranged on the back surface of the p-n node; the thin grating metal electrode, the main grating metal electrode, the back electric field and the back electrode are communicated with the p-n node; and a transparent conducting film is arranged on the full or partial area of the front surface of the crystalline silicon solar cell. The solar cell has a structure having the transparent conducting film, the metal electrodes and the passivation layer, wherein the transparent conducting film can be used for connecting breaking gates so as to reduce the power loss of the breaking gates; the film can reduce the series resistor on the front surface of the cell and enhance the conducting capability of the cell; simultaneously, the crystalline silicon solar cell can play a role in protecting the metal electrode on the front surface of the cell and prevent the metal electrode from oxidizing; and the reflectivity and the color of the crystalline silicon solar cell can be further controlled by adjusting and controlling the transparent conducting film. The invention further discloses a preparation method of the crystalline silicon solar cell.
Description
Technical field
The invention belongs to technical field of solar cells, be specifically related to a kind of crystal-silicon solar cell and preparation method thereof with low series resistance.
Background technology
At present, preparation crystal-silicon solar cell common process generally adopts silk screen printing to prepare metal electrode, may be excessive in printing process owing to pulp particle, overstand or half tone be aging etc., and reason causes network blocking, make metal electrode, particularly thin grid line metal electrode (finger) is imperfect, forms disconnected grid.Simultaneously, metal electrode is positioned at the top layer of crystal-silicon solar cell, easily oxidation under without any the situation of protection.
In order to reduce blocking of electrode pair light, the high-efficiency battery design is had higher requirement to the width of thin gate electrode.Yet thin grid width decline nature can cause the reduction that electrode cross-section is long-pending, thereby causes electrode resistance to increase, and also is that the battery series resistance increases.Simultaneously, the reduction of thin grid width is had higher requirement to screen printing technique.Generally speaking for silk screen printing, thin grid are thin more to mean the easy more appearance grid that break.
At present traditional crystal silicon cell adopts PECVD to plate silicon nitride (SiN at front surface
x), the silicon nitride film of individual layer has been taked compromise design in order to take into account inactivating performance and anti-reflection performance, and the space of lifting is all arranged on passivation effect, anti-reflection effect and color appearance.
Summary of the invention
The purpose of this invention is to provide a kind of crystal-silicon solar cell with low series resistance, this battery has nesa coating-metal electrode-passivation layer structure, and wherein transparent conductive film can connect disconnected grid, reduces the power loss that disconnected grid bring; This film can reduce the series resistance of battery front surface simultaneously, strengthens the conductive capability of battery; Can the metal electrode of battery front side be played a protective role simultaneously, and prevent metal anodes oxidize; By the regulation and control nesa coating, can also regulate and control the reflectivity and the color of crystal-silicon solar cell.
The present invention also aims to provide above-mentioned preparation method with crystal-silicon solar cell of low series resistance, this procedure is succinct, and cost is low.
First purpose of the present invention is achieved by the following technical solution: a kind of crystal-silicon solar cell with low series resistance, comprise p-n junction, front surface at p-n junction is provided with passivation layer, thin grid line metal electrode and main grid line metal electrode, be provided with back surface field and backplate at the back side of p-n junction, described thin grid line metal electrode, main grid line metal electrode, back surface field and backplate are connected with p-n junction, are provided with nesa coating at the front surface Zone Full or the regional area of crystal-silicon solar cell.
As a kind of improvement of the present invention: a kind of crystal-silicon solar cell provided by the invention with low series resistance, comprise p-n junction, front surface at p-n junction is provided with passivation layer, thin grid line metal electrode and main grid line metal electrode, be provided with back surface field and backplate at the back side of p-n junction, described thin grid line metal electrode, main grid line metal electrode, back surface field and backplate are connected with p-n junction, regional area at the front surface of battery also is provided with mask, is not provided with nesa coating on the zone of masked covering at the front surface of battery.
The present invention is by above-mentioned dual mode, be a kind of be that the Zone Full of front surface at the crystal-silicon solar cell of preparation is provided with nesa coating, another kind is that the regional area of front surface at the crystal-silicon solar cell of preparation is by being provided with mask, zone in not masked covering is provided with nesa coating, connect disconnected grid thereby play, reduce the power loss that disconnected grid bring; And the series resistance of reduction battery front surface, strengthen the effect of the conductive capability of battery.Wherein, in the zone of not masked covering nesa coating is set again after at battery front surface regional area mask being set, the regional area that can make battery is not covered by conducting film and shows various figures such as Chinese character, numeral, Chinese and English letter etc. at the front surface of battery.
Second purpose of the present invention is achieved by the following technical solution: above-mentioned preparation method with crystal-silicon solar cell of low series resistance, after preparing crystal-silicon solar cell, plate nesa coating or utilize mask earlier battery front surface regional area to be carried out the selectivity covering at the whole face of battery front surface, front surface at battery does not plate nesa coating in the zone of masked covering, form nesa coating-metal electrode-passivation layer structure, promptly be prepared into crystal-silicon solar cell with low series resistance.
Wherein, the present invention adopts mask to the detailed process that the crystal-silicon solar cell front surface carries out the selectivity covering to be: behind the preparation battery, choose mask, and mask and battery are carried out contraposition, adjustment, the masked selectivity of regional area of battery front surface is covered, then fixing; Adjust filming parameter then, do not plate transparent conductive film in the zone of masked covering at the battery front surface, form the nesa coating-metal electrode-passivation layer structure that has mask pattern with filming equipment.
In above-mentioned preparation method:
The material of nesa coating of the present invention comprises metal oxide and alloy, and wherein said metal oxide is ZnO, In
2O
3, SnO
2, CdO, TiO
2, CdIn
2O
4, Cd
2SnO
4And Zn
2SnO
4In one or more, described alloy be among Sn, Sb, F, Al, Ge, Ga, Zr, B, Mo, Ni and the Zn one or more.
The thickness of nesa coating of the present invention is 1-1000nm, and refractive index is 1.1-6.0.
Plating nesa coating of the present invention adopts evaporation, sputter, ion plating or CVD method to make.
Mask of the present invention is a metal mask, and the material of described metal mask is the alloy of one or more compositions in stainless steel, copper, silicon steel sheet, the al and ni.
The main component of main grid line metal electrode and thin gate line electrode is one or more in silver, aluminium, gold, the copper and mickel in the crystal-silicon solar cell of the present invention's preparation, and wherein the width of main grid line metal electrode is 0.5-5mm.
The main component of passivation layer of the present invention is one or more in silicon nitride, silica, aluminium oxide and the amorphous silicon, and the thickness of described passivation layer is 1-600nm, and refractive index is 1.1-4.0.
The invention has the beneficial effects as follows:
(1) goes up the covering nesa coating at battery front surface (sensitive surface), the metal electrode that disconnects can be reconnected, reduce because the power loss that disconnected grid bring.This conducting film can strengthen the conductive capability of battery, reduces series resistance, can the metal electrode of battery front side also be played a protective role simultaneously, prevents metal anodes oxidize; Keep the conductivity of electrode and the power output of battery;
(2) by the material between the multilayer film, combination of refractive indices, thickness are regulated and control, can control flexibly the reflectivity and the color of the structure of nesa coating-metal electrode-passivation layer, realize antiradar reflectivity and colored battery equivalence fruit.
(3) structure of employing nesa coating-metal electrode-passivation layer can reduce the restriction to passivation material, further optimizes the inactivating performance of crystal-silicon solar cell front surface, reduces recombination rate, improves open circuit voltage and overall performance;
(4) flexible design of mask is changeable, can design different masks, for example can design the mask that covers main grid, and main grid line metal electrode is not covered by conductive film layer, and the welding rod that can more help in the establishment of component connects.Simultaneously, carry out the selectivity plated film at front surface, can be conveniently show different pattern and style at the crystal-silicon solar cell front surface, satisfy design diversity, mask can prepared in batches and repeated use, can carry out volume production as printing;
(5) adopt the inventive method, need not increase complicated technology or pyroprocess, can dock with existing technology easily, have good industrial prospect.
Description of drawings
Fig. 1 is the structural upright schematic diagram of crystal-silicon solar cell in the specific embodiment of the invention;
Fig. 2 is a mask mould schematic top plan view in the specific embodiment of the invention;
Fig. 3 be in the specific embodiment of the invention with mask mould and solar cell the front view after fixing;
Fig. 4 is a plating nesa coating schematic diagram in the specific embodiment of the invention;
Fig. 5 is a solar battery structure front view behind the plated film in the specific embodiment of the invention;
Wherein, 1, p-n junction p district; 2, p-n junction n district; 3, passivation layer; 4, back surface field and backplate; 5, battery front surface thin grid line metal electrode; 6, battery front surface main grid line metal electrode; 7, disconnected grid point; 8, mask; 9, the nesa coating that forms behind the plated film.
Embodiment
Shown in accompanying drawing 1-5, a kind of crystal-silicon solar cell that present embodiment provides with low series resistance, comprise p-n junction p district 1, p-n junction n district 2, in p-n junction n district 2, be provided with passivation layer 3, thin grid line metal electrode 5 and main grid line metal electrode 6, in p-n junction p district 1, be provided with back surface field and backplate 4, wherein, thin grid line metal electrode 5 and main grid line metal electrode 6 are connected with p-n junction n district 2, back surface field and backplate 4 are connected with p-n junction p district 1, are passivation layer 3 at the front surface of solar cell, 6 Zone Full is provided with nesa coating on thin grid line metal electrode 5 and the main grid line metal electrode.
Wherein, crystal-silicon solar cell among the present invention, p-n junction, passivation layer, thin grid line metal electrode, main grid line metal electrode, back surface field, backplate that the structure that possesses general crystal-silicon solar cell is enumerated in as mentioned, but crystal silicon cell of the present invention is not limited thereto, main purpose of the present invention is that the front surface at crystal-silicon solar cell is provided with nesa coating by Zone Full or regional area, reach following purpose, as connect disconnected grid, reduce the power loss that disconnected grid bring; This film can reduce the series resistance of battery front surface simultaneously, strengthens the conductive capability of battery; Can the metal electrode of battery front side be played a protective role simultaneously, and prevent metal anodes oxidize; By the regulation and control nesa coating, can also regulate and control the reflectivity and the color of crystal-silicon solar cell.
Shown in accompanying drawing 1-5, a kind of crystal-silicon solar cell that present embodiment provides with low series resistance, comprise p-n junction p district 1, p-n junction n district 2, in p-n junction n district 2, be provided with passivation layer 3, thin grid line metal electrode 5 and main grid line metal electrode 6, in p-n junction p district 1, be provided with back surface field and backplate 4, wherein, thin grid line metal electrode 5 and main grid line metal electrode 6 are connected with p-n junction n district 2, back surface field and backplate 4 are connected with p-n junction p district 1, are passivation layer 3 at the front surface of solar cell, 6 regional area is provided with nesa coating on thin grid line metal electrode 5 and the main grid line metal electrode.
Wherein, in the zone of not masked covering nesa coating is set again after at crystal-silicon solar cell front surface regional area mask being set, the regional area that can make solar cell is not covered by conducting film and shows various figures such as Chinese character, numeral, Chinese and English letter etc. at the front surface of battery.
Shown in accompanying drawing 1-5, a kind of preparation method's of the crystal-silicon solar cell with low series resistance general treatment step is: choose battery, select whether to adopt the pattern of mask and corresponding mask according to actual needs.Utilizing mask that selectivity is carried out in the target area at the solar cell front surface covers, plates nesa coating with filming equipment in the zone of not masked covering then.Below be example to adopt mask design, concrete steps are as follows:
(1) select battery, battery can be single crystal battery, polycrystalline battery and disconnected grid cell.With disconnected grid cell is example, as shown in Figure 1, this battery comprises p-n junction p district 1, p-n junction n district 2, in p-n junction n district 2, be provided with passivation layer 3, this passivation layer 3 can be with evaporating, sputter, deposition, it is thick that in the method for ion plating or CVD one or more form 1～600nm, refractive index is at 11～4.0 film, the material of passivation layer can be silicon nitride, silica, in the amorphous silicon one or more, can also be other conventional material, thin grid line metal electrode 5 and main grid line metal electrode 6, in p-n junction p district 1, be provided with back surface field and backplate 4, back surface field and backplate 4 are connected with p district 1 among the p-n, wherein, thin grid line metal electrode 5 and main grid line metal electrode 6 are connected with p-n junction n district 2, metal backing field wherein, back electrode and preceding electrode can be used evaporation, sputter, deposition, the preparation of methods such as plating or silk screen printing, its material can be silver, aluminium, gold, copper, the alloy of a kind of or above-mentioned several compositions in the nickel and above metal and frit, organic mixture etc., for disconnected grid cell, can observe disconnected grid point 7.
(2) design according to actual needs can hide the mask of main grid line, is processed into mask 8.Mask with the covering main grid is an example, and its pattern as shown in Figure 2;
(3) mask 8 and solar cell are carried out contraposition, adjust the position of solar cell, main grid metal electrode 6 is covered by metal 8, fixing then, as shown in Figure 3;
(4) cavity that the mask that fixes and solar cell are put into filming equipment is adjusted filming parameter, uses modes such as evaporation, sputter, ion plating or CVD in battery front surface deposition of transparent conductive film, as shown in Figure 4;
(5) after plated film is finished, after treating that temperature lowers, take off mask 8, do not comprise that all being capped refractive index on the thin grid metal electrode 5 is 1.1～6.0 in the zone of masked covering this moment, thickness is the nesa coating (TCO) 9 of 1～1000nm, nesa coating (TCO) 9 is made of one deck or which floor, and its main component has comprised ZnO, In
2O
3, SnO
2, CdO, TiO
2, CdIn
2O
4, Cd
2SnO
4, Zn
2SnO
4In one or more, also comprise some alloys, wherein alloy has comprised at least a among Sn, Sb, F, Al, Ge, Ga, Zr, B, Mo, Ni and the Zn.This nesa coating has covered the zone of not masked 8 coverings of front surface of battery, except main grid line metal electrode 6, and, if this thin grid line metal electrode has disconnected grid point 7, then this nesa coating grid point 7 that will break has coupled together, the series resistance that has reduced battery reduces simultaneously resolves the influence of grid to battery efficiency, as shown in Figure 5.
If do not adopt mask design, then completing steps (1) adopts following steps afterwards:
(a) solar cell that fixes is put into the cavity of filming equipment, adjust filming parameter, using modes such as evaporation, sputter, ion plating or CVD is to have deposited one deck or which floor nesa coating on main grid line metal electrode, thin grid line metal electrode and the passivation layer at the battery front surface, form nesa coating-metal electrode-passivation layer structure, wherein the refractive index of nesa coating is 1.1-6.0, thickness is 1-1000nm, and its main component has comprised ZnO, In
2O
3, SnO
2, CdO, TiO
2, CdIn
2O
4, Cd
2SnO
4, Zn
2SnO
4In one or more, also comprise some alloys, wherein alloy has comprised at least a among Sn, Sb, F, Al, Ge, Ga, Zr, B, Mo, Ni and the Zn.
Present embodiment does not adopt mask, directly n type single crystal battery is put into the magnetic control sputtering plating machine.Wherein, battery, in n type substrate n district 2, obtain p district 1 through boron diffusion, form p-n junction, it is that 40nm, refractive index are 1.46 silica passivating film 3 that the method for employing thermal oxidation prepares thickness, and the method for use silk screen printing is the printed silver aluminium paste overleaf, and the warm area with 180～260 ℃ in drying oven is dried, print aluminium paste afterwards, once more oven dry; At positive printed silver slurry, carry out sintering at 200～860 ℃ warm areas, form aluminium back of the body field, silver-colored aluminium electrode 4 and thin grid silver electrode 5 of front surface electrode and main grid silver electrode 6.Adopt In
2O
3: Zn is a target, is 2.0 100 ℃ of temperature deposit one deck refractive indexes, and thickness is the In of 100nm
2O
3: Zn.This moment, the battery front surface plated one deck In fully
2O
3: the conductive capability of electrode before Zn, this film can strengthen, reduce the battery series resistance.
Present embodiment adopts mask design, as shown in Figure 1, choose the p of disconnected grid point type polycrystal silicon cell is arranged, it has p-n junction p district 1, this battery adopts the method for phosphorous diffusion to form p-n junction n district 2 on p type substrate, adopting the method for PECVD to prepare thickness then is 60nm, and refractive index is 2.2 silicon nitride film 3.The method of use silk screen printing is the printed silver aluminium paste overleaf, with 180～260 ℃ warm area oven dry, prints aluminium paste afterwards, once more oven dry in drying oven; At positive printed silver slurry, carry out sintering at 200～860 ℃ warm areas, form aluminium back of the body field, silver-colored aluminium electrode 4 and thin grid line silver electrode 5 of front surface electrode and main grid line silver electrode 6, the main grid line metal electrode width that forms is 2mm, the width of thin grid line metal electrode is 110 μ m, but produces disconnected grid 7 in screen printing process.
Preparation only hides the mask 8 of battery main grid line, the pattern of mask 8 is two parallel long rectangles, as shown in Figure 2, this mask 8 is specially the alloy of stainless steel and silicon steel sheet in the present embodiment, mask 8 and battery are carried out the position of contraposition, adjustment solar cell, battery main grid silver electrode 6 is covered by metal mask 8, fixing then, as shown in Figure 3.With the cavity that the mould that fixes and battery are put into filming equipment, adopting aumospheric pressure cvd (APCVD) deposition one deck refractive index is 1.9, and thickness is the SnO of 120nm
2: F, as shown in Figure 4.After treating that temperature lowers, take out mould, take off mask, except main grid silver electrode 6, the zone of masked covering does not comprise that thin grid line silver electrode 5 all is capped last layer SnO on this moment battery
2: F film 9, SnO
2: F film 9 has not only strengthened the conductive capability of preceding electrode, reduces the battery series resistance, and the grid point that will break fills up, and has reduced because the power loss that disconnected grid bring.
Present embodiment adopts mask design, and as shown in Figure 1, choosing has the p of disconnected grid point type crystal silicon battery, and it has p-n junction p district 1.This battery adopts the method for phosphorous diffusion to form p-n junction n district 2 on p type substrate, and adopting the method for thermal oxidation to prepare thickness then is 10nm, and refractive index is 1.5 silicon oxide film 3.The method of use silk screen printing is the printed silver aluminium paste overleaf, with 180～260 ℃ warm area oven dry, prints aluminium paste afterwards, once more oven dry in drying oven; At positive printed silver slurry, carry out sintering at 200～860 ℃ warm areas, form aluminium back of the body field, silver-colored aluminium electrode 4 and thin grid line silver electrode 5 of front surface electrode and main grid line silver electrode 6, the main grid line metal electrode width that forms is 2mm, the width of thin grid line metal electrode is 110 μ m, but in screen printing process, produce disconnected grid 7.
As shown in Figure 2, preparation hides the mask 8 of battery main grid line and parts of fine grid line metal electrode, the pattern of mask 8 is a letter, this mask is specially the alloy of stainless steel and silicon steel sheet in the present embodiment, mask 8 and solar cell are carried out the position of contraposition, adjustment solar cell, battery main grid silver electrode 6 is covered by metal mask 8, fixing then, as shown in Figure 3.Cavity with the mould that fixes and battery are put into filming equipment adopts ZnO:Ga as target, and to prepare one deck refractive index be 1.8 to deposited by electron beam evaporation under 140 ℃ of temperature, and thickness is the ZnO:Ga of 200nm, as shown in Figure 4.After treating that temperature lowers, take out mould, take off mask, this moment battery on except main grid silver electrode 6, the zone of masked covering does not comprise that thin grid line silver electrode 5 all is capped last layer ZnO:Ga film 9, and ZnO:Ga film 9 has not only strengthened the conductive capability of preceding electrode, reduces the battery series resistance, and the grid point that will break fills up, and reduced because the power loss that disconnected grid bring.
The foregoing description is a preferred implementation of the present invention; but embodiments of the present invention are not restricted to the described embodiments; other any do not deviate from change, the modification done under spirit of the present invention and the principle, substitutes, combination, simplify; all should be the substitute mode of equivalence, be included in protection scope of the present invention.
Claims (10)
1. crystal-silicon solar cell with low series resistance, comprise p-n junction, front surface at p-n junction is provided with passivation layer, thin grid line metal electrode and main grid line metal electrode, be provided with back surface field and backplate at the back side of p-n junction, described thin grid line metal electrode, main grid line metal electrode, back surface field and backplate are connected with p-n junction, it is characterized in that: front surface Zone Full or regional area at crystal-silicon solar cell are provided with nesa coating.
2. the crystal-silicon solar cell with low series resistance according to claim 1 is characterized in that: the regional area at the front surface of crystal-silicon solar cell also is provided with mask, is not provided with nesa coating on the zone of masked covering at the front surface of battery.
3. the preparation method with crystal-silicon solar cell of low series resistance according to claim 1 and 2, it is characterized in that: after preparing crystal-silicon solar cell, plate nesa coating or utilize mask earlier battery front surface regional area to be carried out the selectivity covering at the whole face of battery front surface, front surface at battery does not plate nesa coating in the zone of masked covering, form nesa coating-metal electrode-passivation layer structure, promptly be prepared into crystal-silicon solar cell with low series resistance.
4. the preparation method with crystal-silicon solar cell of low series resistance according to claim 3, it is characterized in that: adopt mask to be: behind the preparation crystal-silicon solar cell the detailed process that the battery front surface carries out the selectivity covering, choose mask, and mask and battery carried out contraposition, adjustment, the masked selectivity of regional area of battery front surface is covered, then fixing; Adjust filming parameter then, do not plate transparent conductive film in the zone of masked covering at the crystal-silicon solar cell front surface, form the nesa coating-metal electrode-passivation layer structure that has mask pattern with filming equipment.
5. the preparation method with crystal-silicon solar cell of low series resistance according to claim 3 is characterized in that: the material of described nesa coating comprises metal oxide and alloy, and wherein said metal oxide is ZnO, In
2O
3, SnO
2, CdO, TiO
2, CdIn
2O
4, Cd
2SnO
4And Zn
2SnO
4In one or more, described alloy be among Sn, Sb, F, Al, Ge, Ga, Zr, B, Mo, Ni and the Zn one or more.
6. the preparation method with crystal-silicon solar cell of low series resistance according to claim 3 is characterized in that: the thickness of described nesa coating is 1-1000nm, and refractive index is 1.1-6.0.
7. the preparation method with crystal-silicon solar cell of low series resistance according to claim 3 is characterized in that: described plating nesa coating adopts evaporation, sputter, ion plating or CVD method to make.
8. the preparation method with crystal-silicon solar cell of low series resistance according to claim 3, it is characterized in that: described mask is a metal mask, and the material of described metal mask is the alloy of one or more compositions in stainless steel, copper, silicon steel sheet, the al and ni.
9. the preparation method with crystal-silicon solar cell of low series resistance according to claim 3, it is characterized in that: the main component of main grid line metal electrode and thin gate line electrode is one or more in silver, aluminium, gold, the copper and mickel in the crystal-silicon solar cell of preparation, and wherein the width of main grid line metal electrode is 0.5-5mm.
10. the preparation method with crystal-silicon solar cell of low series resistance according to claim 3, it is characterized in that: the main component of described passivation layer is one or more in silicon nitride, silica, aluminium oxide and the amorphous silicon, the thickness of described passivation layer is 1-600nm, and refractive index is 1.1-4.0.
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