CN104966759B - A kind of preparation method of clad metal electrode solar cell - Google Patents
A kind of preparation method of clad metal electrode solar cell Download PDFInfo
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- CN104966759B CN104966759B CN201510247765.XA CN201510247765A CN104966759B CN 104966759 B CN104966759 B CN 104966759B CN 201510247765 A CN201510247765 A CN 201510247765A CN 104966759 B CN104966759 B CN 104966759B
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- 239000002184 metal Substances 0.000 title claims abstract description 24
- 238000002360 preparation method Methods 0.000 title claims abstract description 21
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 59
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 59
- 239000010703 silicon Substances 0.000 claims abstract description 59
- 238000000034 method Methods 0.000 claims abstract description 34
- 238000007650 screen-printing Methods 0.000 claims abstract description 24
- 239000002002 slurry Substances 0.000 claims abstract description 21
- 238000001755 magnetron sputter deposition Methods 0.000 claims abstract description 16
- 230000003667 anti-reflective effect Effects 0.000 claims abstract description 13
- 238000009792 diffusion process Methods 0.000 claims abstract description 12
- 230000005684 electric field Effects 0.000 claims abstract description 8
- 238000005245 sintering Methods 0.000 claims abstract description 7
- 239000002131 composite material Substances 0.000 claims abstract description 6
- 235000008216 herbs Nutrition 0.000 claims abstract description 5
- 210000002268 wool Anatomy 0.000 claims abstract description 5
- 239000011521 glass Substances 0.000 claims abstract description 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 9
- 230000005611 electricity Effects 0.000 claims description 9
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 7
- 239000007769 metal material Substances 0.000 claims description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 3
- 235000012239 silicon dioxide Nutrition 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical group [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 2
- 229910002804 graphite Inorganic materials 0.000 claims description 2
- 239000007770 graphite material Substances 0.000 claims description 2
- 238000007747 plating Methods 0.000 claims description 2
- 239000002356 single layer Substances 0.000 claims description 2
- 238000006243 chemical reaction Methods 0.000 abstract description 8
- 238000004519 manufacturing process Methods 0.000 abstract description 8
- 230000009467 reduction Effects 0.000 abstract description 4
- 230000006872 improvement Effects 0.000 description 8
- 239000010410 layer Substances 0.000 description 6
- 238000003466 welding Methods 0.000 description 6
- 238000000151 deposition Methods 0.000 description 5
- 230000008901 benefit Effects 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 230000003647 oxidation Effects 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- 238000007639 printing Methods 0.000 description 4
- 229910001316 Ag alloy Inorganic materials 0.000 description 3
- 229910000881 Cu alloy Inorganic materials 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- 238000005253 cladding Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000003475 lamination Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000013049 sediment Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 241000208340 Araliaceae Species 0.000 description 1
- 235000005035 Panax pseudoginseng ssp. pseudoginseng Nutrition 0.000 description 1
- 235000003140 Panax quinquefolius Nutrition 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229920002472 Starch Polymers 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- -1 frits Substances 0.000 description 1
- 235000008434 ginseng Nutrition 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 238000004062 sedimentation Methods 0.000 description 1
- 235000019698 starch Nutrition 0.000 description 1
- 239000008107 starch Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Condensed Matter Physics & Semiconductors (AREA)
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Abstract
The invention discloses a kind of preparation method of clad metal electrode solar cell, it is characterised in that comprise the following steps：（1）Making herbs into wool；（2）Diffusion；（3）Remove phosphorosilicate glass；（4）Antireflective film is formed in front side of silicon wafer；（5）By being screen printed onto, silicon chip back side prepares back electrode and Al carries on the back electric field；（6）Ag electrodes are formed in front side of silicon wafer by silk-screen printing Ag slurries；（7）High temperature sintering；（8）First mask is covered in into front side of silicon wafer makes the region in addition to Ag electrodes carry out covering；（9）Cu electrodes are deposited on Ag electrodes using the method for magnetron sputtering C u targets；（10）Second mask is covered in into front side of silicon wafer makes the region in addition to Cu electrodes carry out covering；（11）Sn electrodes are deposited on Cu electrodes using the method for magnetron sputtering Sn targets, the solar cell of composite positive electrode is finally given.Using the present invention, the compactness of electrode can be made to improve and resistance value reduction, so as to improve the conversion efficiency of battery, reduce production cost.
Description
Technical field
The present invention relates to a kind of area of solar cell, more particularly to a kind of preparation of clad metal electrode solar cell
Method.
Background technology
Solar cell is in order to export electric energy, it is necessary to form the conduction with tight Ohmic contact at battery p-n junction two ends
Material.This conductive material is generally metal material, and traditionally the conductive material of battery upper surface is called positive electrode, lower surface
Conductive material is back electrode.Silk-screen printing is a traditional industrialization process technology, since 20 century 70s are just obtained
It is widely applied.Because it has obvious advantage in the reduction of production cost, production can be mass produced and reduced
Cycle, therefore the technology is also widely used in the production of solar cell.It is prepared by the electrode of solar battery of current industrialization
It is exactly, by screen printing technique, the electrocondution slurry of metal to be formed into electrode pattern, Ran Houtong through screen mesh on silicon chip
Cross the electrode that high temperature sintering forms tight Ohmic contact.The positive electrode of industrialization uses Ag electrodes, back electrode using Al back surface fields and
Ag back electrodes.
Due to the limitation of silk-screen printing：（1）Positive electrode unavoidably occurs disconnected grid and empty print phenomenon in printing；（2）
The electrode compactness of silk-screen printing is bad, more far short of what is expected than metal electrode compactness prepared by plating, magnetron sputtering technique, causes electricity
The resistance value of pole is larger；（3）Silk-screen printing metal electrode height out is not high, it is necessary to repeatedly printing.In addition, Ag electrodes
Middle Ag slurries are expensive, are unfavorable for reducing production cost.Therefore, how on the basis of silk-screen printing, develop a kind of battery and turn
Efficiency high is changed, the positive electrode of the solar cell of low cost turns into researcher's focus of attention.
The content of the invention
The technical problems to be solved by the invention are, there is provided a kind of preparation side of clad metal electrode solar cell
Method, can be such that the compactness of electrode improves and resistance value reduction, so as to improve the conversion efficiency of battery, reduce production cost.
In order to solve the above-mentioned technical problem, the invention provides a kind of preparation side of clad metal electrode solar cell
Method, comprises the following steps：
（1）Using wet method or dry method making herbs into wool, matte is formed in silicon chip surface；
（2）Silicon chip spreads in diffusion furnace, forms p-n junction；
（3）The phosphorosilicate glass that removal thermal diffusion is formed in silicon chip surface；
（4）Antireflective film is formed in front side of silicon wafer；
（5）By being screen printed onto, silicon chip back side prepares back electrode and Al carries on the back electric field；
（6）Ag electrodes are formed in front side of silicon wafer by silk-screen printing Ag slurries；
（7）High temperature sintering；
（8）First mask is covered in into front side of silicon wafer makes the region in addition to Ag electrodes carry out covering；
（9）Cu electrodes are deposited on Ag electrodes using the method for magnetron sputtering C u targets；
（10）Second mask is covered in into front side of silicon wafer makes the region in addition to Cu electrodes carry out covering；
（11）Sn electrodes are deposited on Cu electrodes using the method for magnetron sputtering Sn targets, composite positive electrode is finally given
Solar cell.
Used as the improvement of such scheme, the height h1 of the Ag electrodes is 7-12 microns, and width d1 is 20-30 microns.
Used as the improvement of such scheme, the Cu electrodes are covered on Ag electrodes, and the height h2 of the Cu electrodes is 5-
10 microns, width d2 is 30-50 microns.
Used as the improvement of such scheme, the Sn electrodes are covered on Cu electrodes, and the height h3 of the Sn electrodes is
0.1-1 microns, width d3 is 32-52 microns.
Used as the improvement of such scheme, first mask and the second mask are graphite or metal material.
Used as the improvement of such scheme, first mask covers front side of silicon wafer except Ag electricity with the pattern fits of Ag electrodes
Extremely outer region；Second mask covers region of the front side of silicon wafer in addition to Cu electrodes with the pattern fits of Cu electrodes.
As the improvement of such scheme, the step（2）Target block resistance is controlled during middle diffusion in 100-150 Europe/.
As the improvement of such scheme, the step（4）Using PECVD methods or magnetically controlled sputter method, in the silicon
Plate single-layer silicon nitride silicon, multilayer silicon nitride or silicon nitride/silicon dioxide lamination antireflective film in piece front.
As the improvement of such scheme, the step（5）In by silk-screen printing Ag slurries, form back of the body electricity in silicon chip back side
Pole, by silk-screen printing Al slurries, Al back of the body electric fields is formed in silicon chip back side, is then dried at 200-280 DEG C, removal slurry
Organic principle in material.
Implement the embodiment of the present invention, have the advantages that：
The present invention improves existing simple use and is screen printed onto the method that front side of silicon wafer prepares positive electrode, but first uses silk screen
Printing is obtained smaller and narrower Ag electrodes, then this time deposition Cu electrodes and the Sn electrodes by the way of magnetron sputtering, forms multiple
Close metal electrode.Due to by the way of magnetron sputtering, the good Ag/Cu alloys of compactness being formed, so as to reduce the electricity of electrode
Resistance, increases the collection efficiency of electric current.And prevent Cu electrodes from making as diaphragm in one layer of Sn electrode of Cu electrodes external sediment
Oxidation during, while ensuring the welding performance of electrode.In addition, reduce Ag slurry consumptions and increase the Cu raw materials of low cost,
So that the cost of the combination electrode is substantially reduced.The height of whole composite positive electrode is obviously improved, and reduces the series resistance of battery,
The conversion efficiency of the solar cell obtained by the present invention is set to be imitated than the conversion of the single front surface A g electrode solar cells of industrialization
Rate 0.2%-0.3% high.
Brief description of the drawings
Fig. 1 is a kind of flow chart of the preparation method of clad metal electrode solar cell of the invention；
Fig. 2 is the structural representation that preparation method of the present invention is obtained solar cell.
Specific embodiment
To make the object, technical solutions and advantages of the present invention clearer, the present invention is made into one below in conjunction with accompanying drawing
Step ground is described in detail.
With reference to Fig. 1, a kind of preparation method of clad metal electrode solar cell of the invention is comprised the following steps：
S100, using wet method or dry method making herbs into wool, matte is formed in silicon chip surface.
Preparation method of the present invention can select wet method or dry etching technology, carry out making herbs into wool.
It should be noted that silicon chip of the present invention is the method by P-type silicon raw material crystal growth, crystal bar is formed
Afterwards, the size of 156mm x 156mm is sliced into, but is not limited to the size.
S101, silicon chip spreads in diffusion furnace, forms p-n junction.
N-type emitter stage is formed by being diffused in the front side of silicon wafer, and p-n junction is formed between silicon chip and N-type emitter stage.
It should be noted that P-type silicon piece is put into diffusion furnace carrying out phosphorus diffusion, temperature need to be controlled during diffusion at 800 DEG C
In the range of~820 DEG C, target block resistance is 100-150 Europe/.
S102, the phosphorosilicate glass that removal thermal diffusion is formed in silicon chip surface.
S103, antireflective film is formed in front side of silicon wafer.
The present invention prepares antireflective film and can plate individual layer in the front side of silicon wafer using PECVD methods or magnetically controlled sputter method
Silicon nitride, multilayer silicon nitride or silicon nitride/silicon dioxide lamination antireflective film.On the one hand the effect of antireflective film reduces reflectivity, separately
On the one hand silicon chip surface can be passivated, the compound of carrier is reduced.
S104, by being screen printed onto, silicon chip back side prepares back electrode and Al carries on the back electric field.
The present invention forms back electrode, by silk-screen printing Al slurries, in silicon by silk-screen printing Ag slurries in silicon chip back side
The piece back side forms Al back of the body electric fields, is then dried at 200-280 DEG C, the organic principle in removal slurry.
The existing positive electrode that is formed in front side of silicon wafer is usually according to the ginseng such as the positive electrode pattern, line width, line for designing be high
Number, front side of silicon wafer is coated in using silk-screen printing Ag slurry modes, after after high temperature sintering, forms Ag electrodes.
Silk-screen printing technique can be mass produced and dropped due to there is obvious advantage in the reduction of production cost
The features such as low production cycle, as the Main Means for preparing electrode.However, silk-screen printing technique positive electrode is not in printing process
Can avoid that disconnected grid and empty print phenomenon occurs, and the electrode compactness of silk-screen printing is poor, causes the resistance value of electrode larger.
Additionally, silk-screen printing metal electrode height out is not high, it is necessary to repeatedly printing.
On the other hand, existing positive electricity extremely Ag electrodes, but Ag slurry is expensive, causes the cost of battery always can not be significantly
Decline, lack price competitiveness.
Therefore, the present invention is improved to solve the above problems from step S105 ~ S109 to the preparation method of electrode.
S105, Ag electrodes are formed by silk-screen printing Ag slurries in front side of silicon wafer.
S106, high temperature sintering.
Ag is coated in front side of silicon wafer using screen printing mode first to starch, then by forming Ag electrodes after high temperature sintering,
Because, containing corrosion compositions such as frits, Ag electrodes can burn antireflective film, and p-n junction realizes that ohm connects in front surface A g electrodes
Touch.From unlike existing Ag electrodes, Ag electrode heights h1 of the present invention is only 7-12 microns, and width d2 is only 20-30 microns, than
Existing Ag electrodes（Line is a height of 10-20 microns, and line width is only 55-70 microns）Ag slurry consumptions are greatly reduced, is produced for reducing
Cost has obvious effect.
However, reduce Ag electrodes height and width be only capable of reduce Ag slurry consumption, reduces cost, but the compactness of electrode,
The performances such as electrical conductivity are not improved.The present invention passes through step S107 and step S108 further to solve.
S107, the first mask is covered in into front side of silicon wafer makes the region in addition to Ag electrodes carry out covering.
S108, Cu electrodes are deposited using the method for magnetron sputtering C u targets on Ag electrodes.
It should be noted that the pattern of the first mask hollow out is identical with the pattern of Ag electrodes, Ag electricity is formed in front side of silicon wafer
The covering of the first mask is got on afterwards extremely, hollow out position alignment Ag electrodes cause that region of the front side of silicon wafer in addition to Ag electrodes is all hidden
Width needed for lid, and reserved deposition Cu electrodes.Then, Cu electricity is deposited only on Ag electrodes using the method for magnetron sputtering C u targets
Pole.The result of magnetron sputtering C u targets is one layer of Cu electrode of Ag electrodes outer cladding, and the height h2 of Cu electrodes is 5-10 microns, width
D2 is 30-50 microns.
During sputtering sedimentation, Cu ions enter in the hole of Ag electrodes, and hole is filled up, and form compactness fine
Ag/Cu alloys, the resistance value of electrode can be reduced；Additionally, the empty of Ag electrodes prints or disconnected grid portion in screen printing process
Divide and also disappeared because of the formation of Cu electrodes, reduce the electrode resistance of battery, increase the collection efficiency of electric current；By adjusting magnetic
The time of sputtering is controlled, the height h2 of Cu electrodes is controlled to 5-10 microns, the total height of such Ag electrodes/Cu electrodes reaches 12-
22 microns, and the compactness of this combination electrode is very strong, the ability of collected current is greatly improved.
Additionally, effect of the Cu electrodes without corrosion antireflective film that magnetron sputtering is obtained, it is straight with antireflective film and Ag electrodes
Contact, is not in the phenomenon of Cu destruction p-n junctions, so ensures the conversion efficiency of battery.
But the oxidation resistance of Cu electrodes is poor, and Weldability is not enough, therefore need to also be in one layer of Sn of Cu electrodes outer cladding
Electrode.
S109, the second mask is covered in into front side of silicon wafer makes the region in addition to Cu electrodes carry out covering.
With step S106 similarly, the second mask is covered in the region that front side of silicon wafer makes in addition to Cu electrodes, and is reserved
Width needed for deposition Sn electrodes, Cu electrodes is exposed outside, facilitate subsequent step to continue to deposit Sn electrodes on Cu electrodes.
S110, Sn electrodes are deposited using the method for magnetron sputtering Sn targets on Cu electrodes, finally give composite positive electrode
Solar cell.
By controlling the time of magnetron sputtering Sn targets, the height h3 of Sn electrodes is set to be 0.1-1 microns, width d3 is 32-
52 microns.Because the welding performance of Cu electrodes is very poor, when battery seals into component, the adhesion of welding and battery main gate line is not
It is enough, it is easy to come off, so as to reduce the electric property of component.By depositing a Sn electrode on Cu electrodes, can change significantly
The welding performance of kind battery.Further, since the inoxidizability of Cu electrodes is poor, one layer of Sn electrode of deposition can be prevented as diaphragm
Only Cu electrodes oxidation in use.
It should be noted that the width d3 of Sn electrodes is 32-52 microns, it is ensured that Sn electrodes are fully wrapped around by Cu electrodes, its
Height h3 further improves electrode height for 0.1-1 microns in the case where its welding performance is ensured, improves the conversion effect of battery
Rate.
Solar cell obtained in preparation method of the present invention as shown in Figure 2, the solar cell under upper according to
It is secondary to carry on the back electric field 5 and back electrode 6 including positive electrode 1, antireflective film 2, N-type emitter stage 3, P-type silicon 4, Al.Wherein the positive electrode by it is interior to
Outer is Ag electrodes 11,13 3 clad metal electrodes of metal level composition of Cu electrodes 12 and Sn electrodes, due to using magnetron sputtering
Mode, form the good Ag/Cu alloys of compactness, so as to reduce the resistance value of electrode, increase the collection efficiency of electric current；And
In one layer of Sn electrode of Cu electrodes external sediment as diaphragm, the oxidation in use of Cu electrodes is prevented, and ensure electrode
Welding performance.In addition, reducing Ag slurry consumptions and increasing the consumption of inexpensive Cu raw materials so that the cost of the combination electrode drops significantly
It is low.The height of whole composite positive electrode is obviously improved, and reduces the series resistance of battery, makes solar cell obtained by the present invention
High conversion efficiency 0.2%-0.3% of the conversion efficiency than the single front surface A g electrode solar cells of industrialization.
It is last to should be noted that the above embodiments are merely illustrative of the technical solutions of the present invention rather than the present invention is protected
The limitation of scope is protected, although being explained in detail to the present invention with reference to preferred embodiment, one of ordinary skill in the art should
Understand, technical scheme can be modified or equivalent, without deviating from the essence of technical solution of the present invention
And scope.
Claims (9)
1. a kind of preparation method of clad metal electrode solar cell, it is characterised in that comprise the following steps：
（1）Using wet method or dry method making herbs into wool, matte is formed in silicon chip surface；
（2）Silicon chip spreads in diffusion furnace, forms p-n junction；
（3）The phosphorosilicate glass that removal thermal diffusion is formed in silicon chip surface；
（4）Antireflective film is formed in front side of silicon wafer；
（5）By being screen printed onto, silicon chip back side prepares back electrode and Al carries on the back electric field；
（6）Ag electrodes are formed in front side of silicon wafer by silk-screen printing Ag slurries；
（7）High temperature sintering；
（8）First mask is covered in into front side of silicon wafer makes the region in addition to Ag electrodes carry out covering；
（9）Cu electrodes are deposited on Ag electrodes using the method for magnetron sputtering C u targets；
（10）Second mask is covered in into front side of silicon wafer makes the region in addition to Cu electrodes carry out covering；
（11）Sn electrodes are deposited on Cu electrodes using the method for magnetron sputtering Sn targets, the sun of composite positive electrode is finally given
Can battery.
2. the preparation method of clad metal electrode solar cell as claimed in claim 1, it is characterised in that the Ag electrodes
Height h1 is 7-12 microns, and width d1 is 20-30 microns.
3. the preparation method of clad metal electrode solar cell as claimed in claim 1 or 2, it is characterised in that the Cu electricity
Pole is covered on Ag electrodes, and the height h2 of the Cu electrodes is 5-10 microns, and width d2 is 30-50 microns.
4. the preparation method of clad metal electrode solar cell as claimed in claim 1 or 2, it is characterised in that the Sn electricity
Pole is covered on Cu electrodes, and the height h3 of the Sn electrodes is 0.1-1 microns, and width d3 is 32-52 microns.
5. the preparation method of clad metal electrode solar cell as claimed in claim 1, it is characterised in that first mask
It is graphite or metal material with the second mask.
6. the preparation method of clad metal electrode solar cell as claimed in claim 5, it is characterised in that first mask
Region of the front side of silicon wafer in addition to Ag electrodes is covered with the pattern fits of Ag electrodes；The pattern phase of second mask and Cu electrodes
Coordinate the region for covering front side of silicon wafer in addition to Cu electrodes.
7. the preparation method of clad metal electrode solar cell as claimed in claim 1, it is characterised in that the step（2）
Target block resistance is controlled during middle diffusion in 100-150 Europe/.
8. the preparation method of clad metal electrode solar cell as claimed in claim 1, it is characterised in that the step（4）
Using PECVD methods or magnetically controlled sputter method, front side of silicon wafer plating single-layer silicon nitride silicon, multilayer silicon nitride or silicon nitride/
Silicon dioxide stack antireflective film.
9. the preparation method of clad metal electrode solar cell as claimed in claim 1, it is characterised in that the step（5）
In by silk-screen printing Ag slurries, form back electrode in silicon chip back side, by silk-screen printing Al slurries, Al is formed in silicon chip back side
Back of the body electric field, is then dried at 200-280 DEG C, the organic principle in removal slurry.
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| CN109004039A (en) * | 2018-08-02 | 2018-12-14 | 君泰创新（北京）科技有限公司 | A kind of solar battery chip and preparation method thereof |
| CN115132858B (en) * | 2021-03-24 | 2023-09-15 | 泰州隆基乐叶光伏科技有限公司 | Solar cell production method and solar cell |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102299200A (en) * | 2011-08-22 | 2011-12-28 | 中国科学院宁波材料技术与工程研究所 | Method for preparing metal electrodes of crystal silicon solar cell |
| CN103367468A (en) * | 2012-03-29 | 2013-10-23 | 无锡尚德太阳能电力有限公司 | Solar cell, module and method for manufacturing solar cell electrode |
| CN103943729A (en) * | 2014-05-04 | 2014-07-23 | 上海华友金裕微电子有限公司 | Metallization production method of efficient solar cells |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102299200A (en) * | 2011-08-22 | 2011-12-28 | 中国科学院宁波材料技术与工程研究所 | Method for preparing metal electrodes of crystal silicon solar cell |
| CN103367468A (en) * | 2012-03-29 | 2013-10-23 | 无锡尚德太阳能电力有限公司 | Solar cell, module and method for manufacturing solar cell electrode |
| CN103943729A (en) * | 2014-05-04 | 2014-07-23 | 上海华友金裕微电子有限公司 | Metallization production method of efficient solar cells |
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Address after: 528100 No. 69, C District, Sanshui Industrial Park, Foshan, Guangdong. Patentee after: GUANGDONG AIKO SOLAR ENERGY TECHNOLOGY Co.,Ltd. Address before: 528100 No. 69, C District, Sanshui Industrial Park, Foshan, Guangdong. Patentee before: GUANGDONG AIKO SOLAR ENERGY TECHNOLOGY Co.,Ltd. |
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Effective date of registration: 20180614 Address after: 528100 No. 69, C District, Sanshui Industrial Park, Foshan, Guangdong. Co-patentee after: ZHEJIANG AIKO SOLAR ENERGY TECHNOLOGY Co.,Ltd. Patentee after: GUANGDONG AIKO SOLAR ENERGY TECHNOLOGY Co.,Ltd. Address before: 528100 No. 69, C District, Sanshui Industrial Park, Foshan, Guangdong. Patentee before: GUANGDONG AIKO SOLAR ENERGY TECHNOLOGY Co.,Ltd. |