CN106784049A - The preparation method and its obtained battery of a kind of local doped crystal silicon solar cell - Google Patents
The preparation method and its obtained battery of a kind of local doped crystal silicon solar cell Download PDFInfo
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 86
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 86
- 239000010703 silicon Substances 0.000 title claims abstract description 86
- 239000013078 crystal Substances 0.000 title claims abstract description 53
- 238000002360 preparation method Methods 0.000 title claims abstract description 48
- 238000000151 deposition Methods 0.000 claims abstract description 63
- 239000002002 slurry Substances 0.000 claims abstract description 60
- 230000008021 deposition Effects 0.000 claims abstract description 58
- 238000002161 passivation Methods 0.000 claims abstract description 55
- 238000000034 method Methods 0.000 claims abstract description 31
- 229910052751 metal Inorganic materials 0.000 claims abstract description 26
- 239000002184 metal Substances 0.000 claims abstract description 26
- 229910052782 aluminium Inorganic materials 0.000 claims description 48
- 229910052796 boron Inorganic materials 0.000 claims description 45
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 43
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical group [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 40
- 239000004411 aluminium Substances 0.000 claims description 32
- 229910021419 crystalline silicon Inorganic materials 0.000 claims description 32
- 241000446313 Lamella Species 0.000 claims description 30
- 238000007650 screen-printing Methods 0.000 claims description 29
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 16
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 16
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical group O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 13
- 238000005240 physical vapour deposition Methods 0.000 claims description 12
- 239000007787 solid Substances 0.000 claims description 7
- 238000005229 chemical vapour deposition Methods 0.000 claims description 6
- 238000005260 corrosion Methods 0.000 claims description 6
- 230000007797 corrosion Effects 0.000 claims description 6
- 238000005137 deposition process Methods 0.000 claims description 6
- 238000007641 inkjet printing Methods 0.000 claims description 5
- 230000015572 biosynthetic process Effects 0.000 claims description 4
- 150000002500 ions Chemical class 0.000 claims description 2
- 238000002156 mixing Methods 0.000 claims description 2
- 239000000126 substance Substances 0.000 claims description 2
- 239000006104 solid solution Substances 0.000 claims 1
- 239000000243 solution Substances 0.000 claims 1
- 239000007921 spray Substances 0.000 claims 1
- 238000006243 chemical reaction Methods 0.000 abstract description 13
- 238000005215 recombination Methods 0.000 abstract description 3
- 230000006798 recombination Effects 0.000 abstract description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 22
- 229910052709 silver Inorganic materials 0.000 description 22
- 239000004332 silver Substances 0.000 description 22
- 235000008216 herbs Nutrition 0.000 description 20
- 210000002268 wool Anatomy 0.000 description 20
- 229910052581 Si3N4 Inorganic materials 0.000 description 17
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 17
- 101001073212 Arabidopsis thaliana Peroxidase 33 Proteins 0.000 description 16
- 101001123325 Homo sapiens Peroxisome proliferator-activated receptor gamma coactivator 1-beta Proteins 0.000 description 16
- 102100028961 Peroxisome proliferator-activated receptor gamma coactivator 1-beta Human genes 0.000 description 16
- 230000000052 comparative effect Effects 0.000 description 13
- 230000008569 process Effects 0.000 description 12
- 238000009792 diffusion process Methods 0.000 description 11
- 238000005245 sintering Methods 0.000 description 7
- 230000005611 electricity Effects 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- 238000005530 etching Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 4
- AFCARXCZXQIEQB-UHFFFAOYSA-N N-[3-oxo-3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propyl]-2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carboxamide Chemical compound O=C(CCNC(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)N1CC2=C(CC1)NN=N2 AFCARXCZXQIEQB-UHFFFAOYSA-N 0.000 description 3
- 230000003321 amplification Effects 0.000 description 3
- 238000005202 decontamination Methods 0.000 description 3
- 230000003588 decontaminative effect Effects 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000003199 nucleic acid amplification method Methods 0.000 description 3
- 238000011056 performance test Methods 0.000 description 3
- 230000008859 change Effects 0.000 description 2
- 238000007781 pre-processing Methods 0.000 description 2
- 238000011282 treatment Methods 0.000 description 2
- 229910017083 AlN Inorganic materials 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
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- 230000006872 improvement Effects 0.000 description 1
- 238000013532 laser treatment Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000004044 response Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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Abstract
The invention provides the preparation method and its obtained battery of a kind of local doped crystal silicon solar cell, the described method comprises the following steps：Crystal silicon chip backside deposition passivation layer, over the passivation layer local openings, slurry and overleaf adulterate in local openings deposition doping；And optionally, the metal paste of backside deposition first；Wherein, size of the size of local openings less than deposition doping slurry.The present invention is by adjusting back side local openings size and depositing the size of doping slurry, battery back surface field intensity can be dramatically increased, regional area recombination rate is reduced, and then increases substantially open-circuit voltage and fill factor, curve factor, finally significantly lift the conversion efficiency of battery.
Description
Technical field
The invention belongs to area of solar cell, be related to a kind of preparation method of local doped crystal silicon solar cell and
Its obtained battery, more particularly to a kind of prepare office with the size of deposition doping slurry by adjusting back side local openings size
The method and methods described of portion's doped crystal silicon solar cell prepare local doped crystal silicon solar cell.
Background technology
With the development of science and technology, occur in that local back contacts back of the body passivation (PERC) solar cell, this be it is newly developed out
A kind of high performance solar batteries, obtained the extensive concern of industry.Its core be silicon chip shady face aluminum oxide or
(5~100 nanometers) coverings of silicon oxide film, to play passivated surface, improve the effect of long-wave response, so as to lift turning for battery
Change efficiency.
Existing PERC solar battery structures mainly include the silicon wafer layer with PN junction, and are sequentially arranged in the silicon wafer layer back of the body
The passivation layer in face, silicon nitride film layer and aluminum metal layer, such as CN 104882498A, CN 106057920A and CN
A kind of PERC solar cells are disclosed in 105470349A.The preparation method of the PERC solar cells is mainly included such as
Lower step：Making herbs into wool, diffusion, the back of the body polishing, etching and decontamination glass, backside deposition passivation layer (such as aluminum oxide, silicon oxide film or
Silicon nitride), front deposited silicon nitride antireflection layer, back side local openings, silk-screen printing back side silver paste, silk-screen printing back aluminium
Slurry, silk-screen printing front side silver paste material and sintering, the structure by solar cell obtained in methods described are as shown in Figure 1.
From figure 3, it can be seen that the displacement doping by aluminium atom in silicon, P/P has been partially formed at silicon chip back+'s
Structure, but solid solubility limitation, P in silicon due to aluminium atom+Peak concentration is only capable of reaching 3 × 1018cm-3, which limit solar energy
The battery conversion efficiency of battery.
In order to obtain battery conversion efficiency higher, the state university in New South Wales proposes PERL structures, is characterized in
There is the boron atom of solid solubility high to substitute aluminium in silicon and form doping, its doping concentration can reach 1 × 1019~5 × 1019cm-3.Due to P+Concentration is improved, and locally has stronger back surface field to be passivated, and can obtain open-circuit voltage and fill factor, curve factor higher.
CN 103996746A and CN 104638033A disclose a kind of PERL solar cells and preparation method thereof,
PERL structures are as shown in Figure 6, it can be seen that in high temperature or laser treatment process boron to silicon chip diffusion inside, in opening for passivating film
P is formed at mouthful+Area, due to P+Area's boron concentration produces chemical potential difference far above the boron concentration of P-type silicon piece, forms local boron back surface field,
And then lift the battery conversion efficiency of solar cell.
The preparation method of existing PERL solar cells is mainly：Making herbs into wool, diffusion, back of the body etching, backside deposition passivation layer are (such as
Aluminum oxide, silicon oxide film or silicon nitride), front deposited silicon nitride antireflection layer, silk-screen printing boron slurry, backside laser it is simultaneously complete
Into opening film and boron-doping, silk-screen printing back side silver paste, silk-screen printing back side aluminum slurry, silk-screen printing front side silver paste material and sintering.
The characteristics of preparation method of the PERL is：Laser doping area size is at 25 μm~60 μm, and the chi starched less than deposition boron
It is very little.
The preparation method of above-mentioned PERL has the drawback that：Its doping depth only has 6 μm~8 μm.When aluminium paste is sintered,
In the size of very little, due to silicon and the vigorous reaction of aluminium, aluminium can be pierced inside silicon chip as far as possible, up to 20 μm, much
It is deeper than boron doped depth.Therefore, most of boron is diluted having stayed in silico-aluminum, stays in silicon on a small quantity, and the boron in silicon contains
Amount only 1018cm-3, the boron aluminium back surface field intensity of formation is only increased slightly than PERC, and improved efficiency is typically within 0.1%, and its is same
Sample cannot effectively improve the battery conversion efficiency of solar cell.
The content of the invention
The battery performance of the low caused solar cell of doping concentration existed for existing PERC solar cells cannot
The further problem of lifting, and the boron aluminium back surface field limited strength formed in existing PERL solar cells, it is impossible to effectively improve
The battery conversion efficiency of solar cell and preparation technology is cumbersome, high cost, the problems such as be unfavorable for industrialized production, the present invention is carried
The preparation method and its obtained battery of a kind of local doped crystal silicon solar cell are supplied.The present invention is by adjusting back side office
Portion's opening size and the size of deposition doping slurry, can dramatically increase battery back surface field intensity, reduce the compound speed of regional area
Rate, and then open-circuit voltage and fill factor, curve factor are increased substantially, finally significantly lift the conversion efficiency of battery.
It is that, up to this purpose, the present invention uses following technical scheme：
In a first aspect, the invention provides a kind of preparation method of local doped crystal silicon solar cell, methods described
Comprise the following steps：
(1) in crystal silicon chip backside deposition passivation layer；
(2) local openings over the passivation layer；
(3) in local openings deposition doping slurry；
(4) overleaf adulterate；
Optionally, the first metal paste of (5) backside deposition；
Wherein, size of the local openings size less than deposition doping slurry in step (3) in step (2).
Second aspect, the invention provides a kind of preparation method of local doped crystal silicon solar cell, methods described
Comprise the following steps：
(A) in crystal silicon chip backside deposition passivation layer；
(B) doping slurry is deposited over the passivation layer；
(C) overleaf local openings, while being doped；
Optionally, the first metal paste of (D) backside deposition；
Wherein, the size of the local openings size for depositing the slurry that adulterates middle less than step (B) in step (C).
The preparation method of above two part doped crystal silicon solar cell is to adjust back side local openings size
With the size of deposition doping slurry, the size of deposition of the present invention doping slurry is 110 μm~300 μm, itself and silicon wafer thickness
Close, in sintering, the vigorous reaction of silicon and aluminium causes that aluminium more enters in silicon body along width, and depth is no more than 4 μ
M, less than the doping depth of element in doping slurry.Therefore, the element in most of doping slurry is stayed in silicon, and then makes silicon
Doping slurry in constituent content reach 6 × 1019cm-3~9 × 1020cm-3, and then effectively improve the battery of solar cell
Conversion efficiency.
In each preparation method of the present invention, " local openings " are typical but are not limited to local punctual openings, even will
" open cells " are regarded in each fritter opening domain as, are overleaf opened on passivation layer multiple (>=2) " open cells ".
In the above method, the size of local openings refers to after acting on backside passivation layer less than the size of deposition doping slurry
Area of the area of the open area of formation less than the doping slurry of local deposits.
In above-mentioned each preparation method, crystal silicon chip also includes preprocessing process, institute before backside deposition passivation layer is carried out
Stating preprocessing process includes making herbs into wool, diffusion, back of the body etching, decontamination glass treatment and front deposition antireflection layer, and it is this area
Routine operation, therefore concrete operation step and parameter here is omitted.
In above-mentioned each preparation method, front, back side silk-screen printing silver paste and sintering processes are also included after each step,
It is the routine operation of this area, thus concrete operation step and parameter here is omitted.
It is following as currently preferred technical scheme, but not as the present invention provide technical scheme limitation, pass through
Following technical scheme, can preferably reach and realize technical purpose of the invention and beneficial effect.
Used as currently preferred technical scheme, the mode of local openings is laser opening or corrosion opening in step (2).
Preferably, the corrosion opening is solution and/or slurry corrosion opening.
Preferably, doping method described in step (4) be induced with laser, pick into or ion implanting in any one or extremely
Few two kinds combination.
Used as currently preferred technical scheme, the method for doping and local openings is simultaneously in step (C)：Use laser
Opening is formed over the passivation layer, while carrying out laser doping.
Used as currently preferred technical scheme, local openings size is independently 100 μ in step (2) and step (C)
M~200 μm, such as 100 μm, 110 μm, 120 μm, 130 μm, 140 μm, 150 μm, 160 μm, 170 μm, 180 μm, 190 μm or 200
μm etc., it is not limited to other unrequited numerical value are equally applicable in cited numerical value, the number range.
Preferably, in step (3) and step (B) size of deposition doping slurry be independently 110 μm~300 μm, example
Such as 110 μm, 130 μm, 150 μm, 170 μm, 200 μm, 230 μm, 250 μm, 270 μm or 300 μm, it is not limited to cited
Numerical value, other unrequited numerical value are equally applicable in the number range.Even by the pocket of each deposition doping slurry
Regard " doping slurry unit " as, multiple (>=2) " doping slurry unit " is deposited on the passivation layer for overleaf depositing, each
The size of " doping slurry unit " is 40 μm~200 μm.
Used as currently preferred technical scheme, step (1) and step (A) described crystal silicon chip are independently p-type silicon
Piece.
Preferably, the deposition process in step (1) and step (A) the backside deposition passivation layer is independently screen printing
In brush, chemical vapor deposition, physical vapour deposition (PVD) or ink jet printing any one or at least two combination.
Preferably, the passivation layer in step (1) and step (A) the backside deposition passivation layer be independently aluminum oxide,
In silicon nitride or silicon oxide film any one or at least two combination, combination typical case but non-limiting examples have：Oxygen
The combination of change aluminium and silicon nitride, the combination of silicon nitride and silicon oxide film, the combination of aluminum oxide and silicon oxide film, aluminum oxide,
Combination of silicon nitride and silicon oxide film etc..
As currently preferred technical scheme, the deposition process in step (3) and step (B) the deposition doping slurry
Be independently in silk-screen printing, chemical vapor deposition, physical vapour deposition (PVD) or ink jet printing any one or at least two
Combination, preferably silk-screen printing；
Preferably, the doping slurry in step (3) and step (B) the deposition doping slurry is for aluminium element and in silicon
Solid solubility is more than the doping slurry of at least one 3rd major element of aluminium, preferably boron slurry.
As currently preferred technical scheme, in step (5) and step (D) metal paste of backside deposition first
Deposition process is independently any one in silk-screen printing, chemical vapor deposition, physical vapour deposition (PVD) or ink jet printing, preferably
It is silk-screen printing.
Preferably, step (5) and step (D) metal paste of backside deposition first are aluminum slurry.
The third aspect, the invention provides the local doped crystalline silicon solar-electricity that any of the above-described preparation method is prepared
Pond.
Used as currently preferred technical scheme, the battery includes crystal silicon chip layer and located at the crystalline silicon lamella back side
Passivation layer and the first metal conducting layer, have on the passivation layer it is multiple be open, the open interior fills the first metal pulp
Material, along opening, in crystalline silicon lamella, doping forms alloy-layer, the first doping back surface field and second successively in the crystalline silicon lamella
Doping back surface field.
" multiple " of the present invention means " at least 2 ".
Used as currently preferred technical scheme, the height of the alloy-layer peak is 3 μm~15 μm, such as 3 μm, 5 μ
M, 7 μm, 10 μm, 13 μm or 15 μm etc., it is not limited to other unrequited numerical value in cited numerical value, the number range
Equally applicable, herein, the height is using crystal silicon chip and passivation layer interface as datum level.
Preferably, the first doping back surface field aluminium element adulterates the back surface field to be formed.
Preferably, the first doping back surface field thickness is 0.5 μm~3 μm, such as 0.5 μm, 0.7 μm, 1 μm, 1.3 μm, 1.5
μm, 1.7 μm, 2 μm, 2.3 μm, 2.5 μm, 2.7 μm or 3 μm etc., it is not limited in cited numerical value, the number range its
His unrequited numerical value is equally applicable.
Preferably, the second doping back surface field is at least one threeth major element doping of the solid solubility more than aluminium in silicon
The back surface field of formation, preferably boron back surface field.
Preferably, it is described second doping back surface field peak height be 5 μm~20 μm, such as 5 μm, 7 μm, 10 μm, 13 μm,
15 μm, 17 μm or 20 μm etc., it is not limited to other unrequited numerical value are equally fitted in cited numerical value, the number range
With herein, the height is using crystal silicon chip and passivation layer interface as datum level.
Preferably, solid solubility is more than mixing at least one 3rd major element of aluminium in silicon in the second doping back surface field
Miscellaneous concentration is 6 × 1019cm-3~9 × 1020cm-3, such as 7 × 1019cm-3、9×1019cm-3、1×1020cm-3、1.3×1020cm-3、1.5×1020cm-3、1.7×1020cm-3、2×1020cm-3、4×1020cm-3、6×1020cm-3Or 9 × 1020cm-3Deng, but simultaneously
It is not limited only to other unrequited numerical value in cited numerical value, the number range equally applicable.
In the present invention, the crystalline silicon lamella is p-type silicon lamella.
In the present invention, the passivation layer be in aluminum oxide, silicon nitride or silicon oxide film any one or at least two
Combination, the combination is typical but non-limiting examples have：The group of the combination of aluminum oxide and silicon nitride, silicon nitride and silicon oxide film
Close, the combination of aluminum oxide and silicon oxide film, combination of aluminum oxide, silicon nitride and silicon oxide film etc..
The crystalline silicon lamella front can also be sequentially provided with making herbs into wool face diffusion layer, making herbs into wool face antireflection layer and making herbs into wool face silver electricity
Pole, it is the conventional arrangement of existing doped crystal silion cell, therefore does not repeat herein.
The crystalline silicon lamella back side can also be distributed setting back of the body silver electrode, and it is that the routine of existing doped crystal silion cell sets
Put, therefore do not repeat herein.
Compared with prior art, the invention has the advantages that：
The present invention makes the size of local openings less than deposition by adjusting back side local openings size and deposition doping slurry
The size of doping slurry, improves the doping concentration of boron in silicon, for existing PERC and PERL technologies, its P+Peak concentration can be by 3
×1018cm-3Improve to 6 × 1019cm-3~9 × 1020cm-3, battery back surface field intensity can be dramatically increased, reduce regional area
Recombination rate, and then open-circuit voltage and fill factor, curve factor are increased substantially, finally significantly lift the conversion efficiency of battery.
Meanwhile, the more existing PERL solar-electricities of preparation method of local doped crystal silicon solar cell of the present invention
Pond is more simple, and cost is lower, higher with industry existing equipment compatibility, is conducive to industrialized production.
Brief description of the drawings
Fig. 1 is the back side top view of PERC solar battery structures described in prior art or comparative example 1；
Fig. 2 is the office of part A in the back side top view of PERC solar battery structures described in prior art or comparative example 1
Portion's amplification plan view；
Fig. 3 is part A in the back side top view of PERC solar battery structures described in prior art or comparative example 1
Along the side view in a-a ' sections in close-up top view；
Fig. 4 is the back side top view of PERL solar battery structures described in prior art or comparative example 2；
Fig. 5 is the office of part A in the back side top view of PERL solar battery structures described in prior art or comparative example 2
Portion's amplification plan view；
Fig. 6 is the office of part A in the back side top view of PERL solar battery structures described in prior art or comparative example 2
Along the side view in a-a ' sections in portion's amplification plan view；
Fig. 7 is the back side top view of local doped crystal silicon solar battery structure described in the embodiment of the present invention 1；
Fig. 8 is A portions in the back side top view of local doped crystal silicon solar battery structure described in the embodiment of the present invention 1
The close-up top view for dividing；
Fig. 9 is A portions in the back side top view of local doped crystal silicon solar battery structure described in the embodiment of the present invention 1
Along the side view in a-a ' sections in the close-up top view for dividing；
Wherein, 1- crystalline silicons lamella, 2- passivation layers, the metal conducting layers of 3- first, 4- silico-aluminums, 5- aluminium back surface fields, 6- boron
Back surface field, 7- making herbs into wool faces diffusion layer, 8- making herbs into wool faces antireflection layer, 9- making herbs into wool faces silver electrode, 10- back of the body silver electrodes, 11- boron aluminium back surface fields.
Specific embodiment
For the present invention is better described, technical scheme is readily appreciated, below to the present invention further specifically
It is bright.But following embodiments is only simple example of the invention, the scope of the present invention is not represented or limits, this
Invention protection domain is defined by claims.
Specific embodiment of the invention part provides a kind of preparation method of local doped crystal silicon solar cell,
First, the described method comprises the following steps：
(1) in crystal silicon chip backside deposition passivation layer；
(2) local openings over the passivation layer；
(3) in local openings deposition doping slurry；
(4) overleaf adulterate；
Optionally, the first metal paste of (5) backside deposition；
Wherein, size of the local openings size less than deposition doping slurry in step (3) in step (2).
Second, the described method comprises the following steps：
(A) in crystal silicon chip backside deposition passivation layer；
(B) doping slurry is deposited over the passivation layer；
(C) overleaf local openings, while being doped；
Optionally, the first metal paste of (D) backside deposition；
Wherein, the size of the local openings size for depositing the slurry that adulterates middle less than step (B) in step (C).
Specific embodiment of the invention part additionally provides the local doped crystalline silicon sun obtained in any of the above-described preparation method
Energy battery, the battery includes crystal silicon chip layer 1 and is sequentially arranged in the metal of passivation layer 2 and first at the back side of crystalline silicon lamella 1
Conductive layer 3, has multiple openings on the passivation layer 2, the open interior fills the first metal paste, the crystalline silicon lamella
Along opening, in crystalline silicon lamella, doping forms the doping doping back surface field 6 of back surface field 5 and second of alloy-layer 4, first successively in 1.
It is below present invention typical case but non-limiting example：
Embodiment 1：
Present embodiments provide a kind of local doped crystal silicon solar cell, the local doped crystalline silicon solar-electricity
The structure in pond as Figure 7-9, including crystalline silicon lamella 1 and is sequentially arranged in the passivation layer 2 and first at the back side of crystalline silicon lamella 1
Metal conducting layer 3, has multiple openings on the passivation layer 2, the open interior fills the first metal paste, the crystalline silicon
Along opening, in crystalline silicon lamella, doping forms silico-aluminum 4, aluminium back surface field 5 and boron back surface field 6 successively in lamella 1.
The front of crystalline silicon lamella 1 is sequentially provided with making herbs into wool face diffusion layer 7, making herbs into wool face antireflection layer 8 and making herbs into wool face silver electricity
Pole 9；The back side of crystalline silicon lamella 1 distribution sets back of the body silver electrode 10.
Wherein, the aluminum oxide of the passivation layer 2, the first metal conducting layer 3 is aluminium electrode layer, the height of the peak of silico-aluminum 4
It is 8 μm to spend, and the thickness of aluminium back surface field 5 is 2 μm；The height of the peak of boron back surface field 6 is 12 μm；The doping concentration of boron is 7 in boron back surface field 6
×1019cm-3。
The preparation method of the local doped crystal silicon solar cell is：
Crystal silicon chip is carried out making herbs into wool, diffusion, back of the body etching, decontamination glass treatment and front deposition antireflection layer successively,
Then carry out backside deposition passivation layer, deposit boron slurry over the passivation layer, overleaf local openings be doped simultaneously, the back side thread
Wire mark brush aluminum slurry, front silk-screen printing silver paste, back side silk-screen printing silver paste and sintering processes, obtain local doped crystal
Silicon solar cell；Wherein, local openings are 100 μm on passivation layer, and less than the size (120 μm) of silk-screen printing boron slurry.
Embodiment 2：
A kind of local doped crystal silicon solar cell and preparation method thereof is present embodiments provided, the local doping is brilliant
The structure of body silicon solar cell in addition to the combination that passivation layer 2 is aluminum oxide and silicon oxide film, other with embodiment 1 in
It is identical.
In the preparation method of the local doped crystal silicon solar cell, except local openings are 150 μm on passivation layer,
The size of silk-screen printing boron slurry is 190 μm outer, and other preparation process are identical with preparation method in embodiment 1.
Through the above method, the height of the peak of silico-aluminum 4 is 6 μm in local doped crystal silicon solar cell, the aluminium back of the body
The thickness of field 5 is 2 μm；The height of the peak of boron back surface field 6 is 12 μm；The doping concentration of boron is 1.2 × 10 in boron back surface field 620cm-3。
Embodiment 3：
A kind of local doped crystal silicon solar cell and preparation method thereof is present embodiments provided, the local doping is brilliant
The structure of body silicon solar cell in addition to the combination that passivation layer 2 is silicon nitride and silicon oxide film, other with embodiment 1 in
It is identical.
Preparation method described in the present embodiment is 190 μm, the chi of silk-screen printing boron slurry except the opening size of local openings
Very little is 240 μm outer, and other are in the same manner as in Example 1.
Through the above method, the height of the peak of silico-aluminum 4 is 3.5 μm, aluminium in local doped crystal silicon solar cell
The thickness of back surface field 5 is 2 μm；The height of the peak of boron back surface field 6 is 10 μm；The doping concentration of boron is 1.3 × 10 in boron back surface field 620cm-3。
Embodiment 4：
A kind of local doped crystal silicon solar cell and preparation method thereof is present embodiments provided, the local doping is brilliant
The structure of body silicon solar cell is in addition to passivation layer 2 is silicon nitride, and other are in the same manner as in Example 1.
The preparation method of the local doped crystal silicon solar cell is 100 μm except the opening size of local openings,
The size of silk-screen printing boron slurry is 150 μm outer, and other are in the same manner as in Example 1.
Through the above method, the height of the peak of silico-aluminum 4 is 4 μm in local doped crystal silicon solar cell, the aluminium back of the body
The thickness of field 5 is 2 μm；The height of the peak of boron back surface field 6 is 12 μm；The doping concentration of boron is 7 × 10 in boron back surface field 619cm-3。
Embodiment 5：
A kind of local doped crystal silicon solar cell and preparation method thereof is present embodiments provided, the local doping is brilliant
The structure of body silicon solar cell is in addition to passivation layer 2 is silicon oxide film, and other are in the same manner as in Example 1.
In the preparation method of the local doped crystal silicon solar cell, except the opening size of local openings is 200 μ
M, the size of silk-screen printing boron slurry is for outside 300 μm, other preparation process are identical with preparation method in embodiment 1.
Through the above method, the height of the peak of silico-aluminum 4 is 5 μm in local doped crystal silicon solar cell, the aluminium back of the body
The thickness of field 5 is 2.5 μm；The height of the peak of boron back surface field 6 is 15 μm；The doping concentration of boron is 3 × 10 in boron back surface field 620cm-3。
Comparative example 1：
This comparative example provides a kind of PERC solar cells and preparation method thereof, as Figure 1-3, the PERC sun
Energy battery includes crystal silicon chip layer 1 and is sequentially arranged in the metal conducting layer 3 of passivation layer 2 and first at the back side of crystalline silicon lamella 1, institute
Stating on passivation layer 2 has multiple openings, and the open interior fills the first metal paste, along opening in the crystalline silicon lamella 1
Silico-aluminum 4 and aluminium back surface field 5 are formed to doping in crystalline silicon lamella.
The front of crystalline silicon lamella 1 is sequentially provided with making herbs into wool face diffusion layer 7, making herbs into wool face antireflection layer 8 and making herbs into wool face silver electricity
Pole 9；The back side of crystalline silicon lamella 1 distribution sets back of the body silver electrode 10.
The preparation method of the PERC solar cells is：Crystal silicon chip is pre-processed successively, backside deposition is passivated
Layer, front deposition antireflection layer, back side local openings, backside deposition silver paste backside deposition aluminum slurry, front deposition silver paste,
Backside deposition silver paste and sintering processes, obtain PERC solar cells.
Comparative example 2：
This comparative example provides a kind of PERL solar cells and preparation method thereof, as Figure 4-Figure 6, the PERC sun
Energy battery includes crystal silicon chip layer 1 and is sequentially arranged in the metal conducting layer 3 of passivation layer 2 and first at the back side of crystalline silicon lamella 1, institute
Stating on passivation layer 2 has multiple openings, and the open interior fills the first metal conductive paste, edge in the crystalline silicon lamella 1
It is open and form silico-aluminum 4 and boron aluminium back surface field 11 to doping in crystalline silicon lamella.
The front of crystalline silicon lamella 1 is sequentially provided with making herbs into wool face diffusion layer 7, making herbs into wool face antireflection layer 8 and making herbs into wool face silver electricity
Pole 9；The back side of crystalline silicon lamella 1 distribution sets back of the body silver electrode 10.
The preparation method of the PERL solar cells is：Making herbs into wool, diffusion, back of the body etching, backside deposition passivation layer are (as aoxidized
Aluminium, silicon oxide film or silicon nitride), front deposited silicon nitride antireflection layer, silk-screen printing boron slurry, backside laser complete to open simultaneously
Film and boron-doping, silk-screen printing back side silver paste, silk-screen printing back side aluminum slurry, silk-screen printing front side silver paste material and sintering, it swashs
The size after printing is starched at 25 μm~60 μm less than boron by photodoping area size.
Performance test：Solar cell described in embodiment 1-5 and comparative example 1-2 is carried out into performance test, at 25 DEG C
Determine Voc(open-circuit voltage), Isc(short circuit current), FF (fill factor, curve factor), Efficiency (electricity conversion) and back surface
Field p+Peak doping concentration test result is as shown in table 1.
Table 1：The performance test table of solar cell in embodiment 1-5 and comparative example 1-2
The result of integrated embodiment 1-5 and comparative example 1-2 can be seen that the present invention by adjusting back side local openings size
With deposition doping slurry, the doping concentration of boron in silicon is improved, for existing PERC and PERL technologies, its P+Peak concentration can be by 3
×1018cm-3Improve to 6 × 1019cm-3~9 × 1020cm-3, battery back surface field intensity can be dramatically increased, reduce regional area
Recombination rate, and then open-circuit voltage and fill factor, curve factor are increased substantially, finally significantly lift the conversion efficiency of battery.
Meanwhile, the more existing PERL solar-electricities of preparation method of local doped crystal silicon solar cell of the present invention
Pond is more simple, and cost is lower, higher with industry existing equipment compatibility, is conducive to industrialized production.
Applicant states that the present invention illustrates detailed process equipment of the invention and technological process by above-described embodiment,
But the invention is not limited in above-mentioned detailed process equipment and technological process, that is, do not mean that the present invention has to rely on above-mentioned detailed
Process equipment and technological process could be implemented.Person of ordinary skill in the field it will be clearly understood that any improvement in the present invention,
Addition, the selection of concrete mode to the equivalence replacement and auxiliary element of each raw material of product of the present invention etc., all fall within of the invention
Within the scope of protection domain and disclosure.
Claims (10)
1. a kind of preparation method of local doped crystal silicon solar cell, it is characterised in that the described method comprises the following steps：
(1) in crystal silicon chip backside deposition passivation layer；
(2) local openings over the passivation layer；
(3) in local openings deposition doping slurry；
(4) overleaf adulterate；
Optionally, the first metal paste of (5) backside deposition；
Wherein, size of the local openings size less than deposition doping slurry in step (3) in step (2).
2. a kind of preparation method of local doped crystal silicon solar cell, it is characterised in that the described method comprises the following steps：
(A) in crystal silicon chip backside deposition passivation layer；
(B) doping slurry is deposited over the passivation layer；
(C) overleaf local openings, while being doped；
Optionally, the first metal paste of (D) backside deposition；
Wherein, the size of the local openings size for depositing the slurry that adulterates middle less than step (B) in step (C).
3. preparation method according to claim 1, it is characterised in that the mode of local openings is opened for laser in step (2)
Mouth or corrosion opening；
Preferably, the corrosion opening is solution and/or slurry corrosion opening；
Preferably, doping method described in step (4) be induced with laser, pick into or ion implanting in any one or at least two
The combination planted.
4. preparation method according to claim 2, adulterates and the method for local openings is simultaneously in step (C)：Using sharp
Light forms opening over the passivation layer, while carrying out laser doping.
5. the preparation method according to claim any one of 1-4, it is characterised in that locally opened in step (2) and step (C)
Mouth size is independently 100 μm~200 μm；
Preferably, the size of step (3) and step (B) deposition doping slurry is independently 110 μm~300 μm.
6. the preparation method according to claim any one of 1-5, it is characterised in that step (1) and step (A) described crystal
Silicon chip is independently p-type silicon chip；
Preferably, the deposition process in step (1) and step (A) the backside deposition passivation layer be independently silk-screen printing,
In chemical vapor deposition, physical vapour deposition (PVD) or ink jet printing any one or at least two combination；
Preferably, the passivation layer in step (1) and step (A) the backside deposition passivation layer is independently aluminum oxide, nitridation
In silicon or silicon oxide film any one or at least two combination.
7. the preparation method according to claim any one of 1-6, it is characterised in that step (3) and step (B) described deposition
During deposition process in doping slurry is independently silk-screen printing, chemical vapor deposition, physical vapour deposition (PVD) or ink jet printing
Any one or at least two combination, preferably silk-screen printing；
Preferably, the doping slurry in step (3) and step (B) the deposition doping slurry is aluminium element and the solid solution in silicon
Degree is more than the doping slurry of at least one 3rd major element of aluminium, preferably boron slurry.
8. the preparation method according to claim any one of 1-7, it is characterised in that step (5) and step (D) described back side
It is independently silk-screen printing, chemical vapor deposition, physical vapour deposition (PVD) or spray to deposit the deposition process in the first metal paste
In ink print any one, preferably silk-screen printing；
Preferably, the first metal paste in step (5) and step (D) metal paste of backside deposition first is aluminum slurry.
9. the local doped crystalline silicon solar-electricity that the preparation method described in a kind of use claim any one of 1-8 is prepared
Pond.
10. local doped crystal silicon solar cell according to claim 9, it is characterised in that the battery includes crystalline substance
Body silicon wafer layer (1) and the passivation layer (2) and the first metal conducting layer (3) at crystalline silicon lamella (1) back side are sequentially arranged in, it is described blunt
Changing on layer (2) has multiple openings, and the open interior fills the first metal paste, along opening in the crystalline silicon lamella (1)
To in crystalline silicon lamella, doping forms alloy-layer (4), the first doping back surface field (5) and the second doping back surface field (6) successively；
Preferably, the height of alloy-layer (4) peak is 3 μm~15 μm；
Preferably, described first doping back surface field (5) aluminium element adulterates the back surface field to be formed；
Preferably, the thickness of first doping back surface field (5) is 0.5 μm~3 μm；
Preferably, second doping back surface field (6) is at least one threeth major element doping of the solid solubility more than aluminium in silicon
The back surface field of formation, preferably boron back surface field；
Preferably, the height of described second doping back surface field (6) peak is 5 μm~20 μm；
Preferably, solid solubility is more than mixing at least one 3rd major element of aluminium in silicon in second doping back surface field (6)
Miscellaneous concentration is 6 × 1019cm-3~9 × 1020cm-3。
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