US20230051753A1 - Solar cell superfine electrode transfer thin film - Google Patents

Solar cell superfine electrode transfer thin film Download PDF

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US20230051753A1
US20230051753A1 US17/968,263 US202217968263A US2023051753A1 US 20230051753 A1 US20230051753 A1 US 20230051753A1 US 202217968263 A US202217968263 A US 202217968263A US 2023051753 A1 US2023051753 A1 US 2023051753A1
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electrode
electrodes
layer
melt adhesive
transfer film
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US17/968,263
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Xiaohong Zhou
Zongbao Fang
Linsen Chen
Pengfei Zhu
Donglin Pu
Ximei Yin
Yunlong Zhao
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SVG Optronics Co Ltd
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SVG Optronics Co Ltd
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02Details
    • H01L31/0224Electrodes
    • H01L31/022408Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/022433Particular geometry of the grid contacts
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02Details
    • H01L31/0216Coatings
    • H01L31/02161Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02167Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/02168Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02Details
    • H01L31/0224Electrodes
    • H01L31/022408Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/186Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
    • H01L31/1864Annealing
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68381Details of chemical or physical process used for separating the auxiliary support from a device or wafer
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy

Definitions

  • the present disclosure relates to the technical field of solar battery, and in particular to a hyperfine electrode transfer film for a solar battery, a method for producing the same, and a method for applying the same.
  • Monocrystalline silicon solar batteries and polysilicon solar batteries are commonly produced by forming surface electrodes on a silicon surface with a process of precise screen printing.
  • the electrodes have a linewidth of 60 ⁇ m to 100 ⁇ m. Clogging may occur to the screen printing with the linewidth of 60 ⁇ m due to characteristics of screen and electroconduction slurry, thereby affecting the yield and the quality of electrodes.
  • the electrodes with a large linewidth has two disadvantages, i.e., large consumption of electroconduction slurry which results in a high cost, and a large coverage for surface electrodes on the silicon chip which affects the photoelectric conversion efficiency of battery. Therefore, it is important to reduce the linewidth of the surface electrodes, decrease the consumption of electroconduction slurry and increase the light-receiving area of battery.
  • a hyperfine electrode transfer film for a solar battery a method for producing the same, and a method for applying the same, so as to solve the problems in the conventional technology.
  • a hyperfine electrode transfer film for a solar battery is provided, where the electrode transfer film includes a substrate, a release layer, a resin layer and a hot-melt adhesive layer from bottom to top, electrode trenches are formed in the resin layer, and electrodes are formed in the electrode trenches.
  • the electrode trenches and the electrodes have a comb-like structure or a honeycomb structure corresponding to the solar battery.
  • the electrodes are made of a mixed material of glass microsphere frit and electroconduction slurry.
  • the release layer has a thickness of 0.5 ⁇ m to 1.2 ⁇ m
  • the hot-melt adhesive layer has a thickness of 0.5 ⁇ m to 2.0 ⁇ m.
  • each of the electrode trenches has a linewidth of 2 ⁇ m to 50 ⁇ m and a depth of 2 ⁇ m to 60 ⁇ pm.
  • each of the electrode trenches has a linewidth of 10 ⁇ m to 30 ⁇ m.
  • a method for producing the hyperfine electrode transfer film for a solar battery includes:
  • the forming the electrodes in step S 4 includes:
  • the filling the electrode trenches with glass frit and electroconduction slurry includes: filling the electrode trenches with the glass frit and the electroconduction slurry at the same time; or filling the electrode trenches with the glass frit first and then with the electroconduction slurry.
  • a method for applying the hyperfine electrode transfer film for a solar battery includes:
  • conductive electrodes are produced continuously on a transparent film and are transferred as a whole, and poor transfer will not occur locally. Furthermore, the hot-melt adhesive layer and the semiconductor substrate are sintered directly at a high temperature, to volatilize the hot-melt adhesive layer and retain the electrodes, thereby achieving reliability, high efficiency and convenience for application.
  • FIG. 1 is a structural diagram of an electrode transfer film of the present disclosure
  • FIG. 2 is a structural diagram of electrodes having a comb-like structure according to an embodiment of the present disclosure.
  • FIG. 3 is a structural diagram of electrodes having a honeycomb structure according to an embodiment of the present disclosure.
  • the electrode transfer film includes a substrate 10 , a release layer 20 , a resin layer 30 and a hot-melt adhesive layer 40 from bottom to top. Electrode trenches 31 are formed in the resin layer 30 , and electrodes 50 are formed in the electrode trenches 31 .
  • the substrate 10 normally includes a plastic film or a piece of paper.
  • the release layer 20 includes a film having a surface separability. Normally, in order to increase a release force of the plastic film or the paper, the release layer is formed by performing a plasma process or a fluoridization process on the plastic film or the paper, or applying a silicon release agent on a surface of a film material. No stickiness or slight stickiness exists between the release layer and a certain material which are contacted under a limited condition.
  • the release layer is configured to release the resin layer 30 and the hot-melt adhesive layer 40 from the substrate 10 .
  • the release layer has a thickness of 0.5 ⁇ m to 1.2 ⁇ m.
  • the resin layer 30 is made of UV photosensitive resin.
  • the electrode trenches 31 are formed by imprinting on the resin layer with a convex mold corresponding to an electrode structure.
  • the electrode trenches 31 are configured to grow the electrodes 50 .
  • each of the electrode trenches has a linewidth of 2 ⁇ m to 50 ⁇ m and a depth of 2 ⁇ m to 60 ⁇ m.
  • the electrode trenches have a typical linewidth of 10 ⁇ m to 30 ⁇ m.
  • the electrodes are made of a mixed material of glass frit and electroconduction slurry.
  • the electrodes are preferably in a form of silver wire, and may be made of metal material in a form of gold wire or copper wire in other embodiments.
  • the electrode trenches 31 and the electrodes 50 may have a comb-like structure or a honeycomb structure correspondingly.
  • the hot-melt adhesive layer 40 is volatilized after being sintered at a high temperature.
  • the hot-melt adhesive layer 40 has a thickness of 0.5 ⁇ m to 2 ⁇ m.
  • a method for producing the hyperfine electrode transfer film for a solar battery is also provided in the present disclosure.
  • the method includes step S 1 to step S 4 .
  • step S 1 the substrate 10 is provided.
  • step S 2 the release layer 20 having a thickness of 0.5 ⁇ m to 1.2 ⁇ m is applied on the substrate 10 .
  • step S 3 the resin layer 30 is applied on the release layer 20 , and the electrode trenches 31 are formed by imprinting on the resin layer 30 with a convex mold corresponding to an electrode structure.
  • the electrode trenches 31 and the electrodes 50 have a comb-like structure or a honeycomb structure. A linewidth and a depth of each of the electrode trenches are adjusted based on a requirement for electrode electroconductivity.
  • step S 4 the electrodes 50 are formed, by filling the electrode trenches 31 with electroconduction slurry and baking, and the hot-melt adhesive layer 40 having a thickness of 0.5 ⁇ m to 2 ⁇ m is applied on the electrodes.
  • the electrodes in step S 2 are formed by filling the electrode trenches with the glass frit and the electroconduction slurry through brushing, and sintering (baking) at a low temperature less than 150 Celsius degrees.
  • the glass frit and the electroconduction slurry are filled at the same time, or the glass frit is filled first and then the electroconduction slurry is filled.
  • the percentage of the electroconduction slurry mass is 80% and may be other percentage of mass in other embodiments.
  • a method for applying the hyperfine electrode transfer film for a solar battery includes the following steps:
  • the method for producing the same, and the method for applying the same in the present disclosure roll-to-roll nanoimprinting is adopted, conductive electrodes are produced continuously on a transparent film and are transferred as a whole, and poor transfer will not occur locally. Furthermore, the hot-melt adhesive layer and the semiconductor substrate are sintered directly at a high temperature, to volatilize the hot-melt adhesive layer and retain the electrodes, thereby achieving reliability, high efficiency and convenience for application.
  • the battery includes but is not limited to a solar battery.
  • the solar battery includes but is not limited to an amorphous silicon or microcrystalline silicon film battery, a CIGS battery, a dye-sensitized solar battery, an organic solar battery, a gallium arsenide battery, and the like.
  • the electrodes are produced continuously on a transparent film by roll-to-roll nanoimprinting, the electrodes are transferred as a whole, and poor transfer will not occur locally.
  • the hot-melt adhesive layer and the semiconductor substrate are sintered directly at a high temperature, to volatilize the hot-melt adhesive layer and retain the electrodes, thereby achieving reliability, high efficiency and convenience for application.
  • a linewidth less than 30 ⁇ m can be realized, and the coverage for the electrodes on a surface of a silicon chip is reduced by at least 50%.
  • the electrodes having the honeycomb structure can further reduce the distance for which a current of the solar battery transmits to the electrodes, and the carrier recombination rate, and is advantageous for improving the conversion efficiency.

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Abstract

A solar cell superfine electrode transfer thin film is described. The electrode transfer thin film sequentially includes from bottom to top a substrate, a release layer, a resin layer and a hot melt adhesive layer; the resin layer is formed with electrode trenches therein; the electrode trenches are formed with electrodes therein; superfine conductive electrodes are continuously prepared on a transparent thin film via a roll-to-roll nanoimprinting method, the width of an electrode wire being 2 μm-50 μm, and the width of a typical line being 10 μm-30 μm. Directly attach the superfine electrodes of the hot melt adhesive layer to a solar cell by peeling off the substrate material, and sintering at a high temperature to volatilize the hot melt adhesive layer material while retaining the electrodes, thus the electrodes are integrally transferred, without poor local transfer.

Description

    CROSS REFERENCE TO RELATED APPLICATIONS
  • The present application is a continuation of U.S. application Ser. No. 15/305,748, now U.S. Pat. No. 11,476,373 issued Oct. 18, 2022, which is a U.S. national phase application of PCT/CN2015/075380, which claims priority to Chinese Patent Application No. 201410265681.4, all of which are incorporated herein by reference in their entireties.
  • FIELD
  • The present disclosure relates to the technical field of solar battery, and in particular to a hyperfine electrode transfer film for a solar battery, a method for producing the same, and a method for applying the same.
  • BACKGROUND
  • Monocrystalline silicon solar batteries and polysilicon solar batteries are commonly produced by forming surface electrodes on a silicon surface with a process of precise screen printing. Normally, the electrodes have a linewidth of 60 μm to 100 μm. Clogging may occur to the screen printing with the linewidth of 60 μm due to characteristics of screen and electroconduction slurry, thereby affecting the yield and the quality of electrodes. Further, the electrodes with a large linewidth has two disadvantages, i.e., large consumption of electroconduction slurry which results in a high cost, and a large coverage for surface electrodes on the silicon chip which affects the photoelectric conversion efficiency of battery. Therefore, it is important to reduce the linewidth of the surface electrodes, decrease the consumption of electroconduction slurry and increase the light-receiving area of battery.
  • The production of surface electrodes of solar battery is restricted by the following factors: compatibility with existing processes of solar battery, easy implementation, support for efficient processing, a composite cost lower than the costs for screen printing (including the costs for the screen and electroconduction slurry), and ease of mass production of materials.
  • In a method for producing a front electrode for a solar battery disclosed in Chinese Patent Application No. 201080023219.3 (corresponding to publication no. CN 10244977) which is also a PCT application, which is incorporated by reference, an electrode is formed by filling a mold imprinted with a pattern, then is transferred from the mold by means of an adhesive film and burned onto a semiconductor substrate. The PDMS mold used in the disclosure is soft and therefore is vulnerable, and the electrode has a linewidth above 20 μm, therefore, directly burning the electrode onto the semiconductor substrate will cause problems of production efficiency and environment control.
  • To address the above issues, it is required to provide a hyperfine electrode transfer film for a solar battery, a method for producing the same and a method for applying the same.
  • SUMMARY
  • In view of the above, there is provided a hyperfine electrode transfer film for a solar battery, a method for producing the same, and a method for applying the same, so as to solve the problems in the conventional technology.
  • In order to achieve the above objective, technical solutions according to embodiments of the present disclosure are as follows.
  • A hyperfine electrode transfer film for a solar battery is provided, where the electrode transfer film includes a substrate, a release layer, a resin layer and a hot-melt adhesive layer from bottom to top, electrode trenches are formed in the resin layer, and electrodes are formed in the electrode trenches.
  • As a further improvement, the electrode trenches and the electrodes have a comb-like structure or a honeycomb structure corresponding to the solar battery.
  • As a further improvement, the electrodes are made of a mixed material of glass microsphere frit and electroconduction slurry.
  • As a further improvement, the release layer has a thickness of 0.5 μm to 1.2 μm, and the hot-melt adhesive layer has a thickness of 0.5 μm to 2.0 μm.
  • As a further improvement, each of the electrode trenches has a linewidth of 2 μm to 50 μm and a depth of 2 μm to 60 μpm.
  • As a further improvement, each of the electrode trenches has a linewidth of 10 μm to 30 μm.
  • Accordingly, a method for producing the hyperfine electrode transfer film for a solar battery includes:
  • S1, providing the substrate;
  • S2, applying the release layer on the substrate;
  • S3, applying the resin layer on the release layer, and forming the electrode trenches by imprinting on the resin layer with a convex mold corresponding to an electrode structure, where a linewidth and a depth of each of the electrode trenches are adjusted based on an requirement for electrode electroconductivity; and
  • S4, forming the electrodes by filling the electrode trenches with electroconduction slurry and baking, and applying the hot-melt adhesive layer on the electrodes.
  • As a further improvement, the forming the electrodes in step S4 includes:
  • filling the electrode trenches with glass frit and electroconduction slurry, and sintering at a low temperature less than 150 Celsius degrees.
  • As a further improvement, the filling the electrode trenches with glass frit and electroconduction slurry includes: filling the electrode trenches with the glass frit and the electroconduction slurry at the same time; or filling the electrode trenches with the glass frit first and then with the electroconduction slurry.
  • Accordingly, a method for applying the hyperfine electrode transfer film for a solar battery includes:
  • attaching the hot-melt adhesive layer of the electrode transfer film to an anti-reflection layer on a surface of the solar battery, and heating to bond the hot-melt adhesive layer with the anti-reflection layer;
  • removing the release layer and the substrate to combine the transparent electrodes on the surface of the solar battery; and
  • sintering at a high temperature to volatilize the hot-melt adhesive layer, fuse the electrodes to the surface of the solar battery and completely transfer the hyperfine transparent electrodes.
  • In the present disclosure, roll-to-roll nanoimprinting is adopted, conductive electrodes are produced continuously on a transparent film and are transferred as a whole, and poor transfer will not occur locally. Furthermore, the hot-melt adhesive layer and the semiconductor substrate are sintered directly at a high temperature, to volatilize the hot-melt adhesive layer and retain the electrodes, thereby achieving reliability, high efficiency and convenience for application.
  • BRIEF DESCRIPTION OF THE DRAWINGS
  • The accompanying drawings required for the description of the embodiments or the conventional technology are described briefly as follows, so that the technical solutions according to the embodiments of the present disclosure or in the conventional technology become clearer. It is apparent that the accompanying drawings in the following description are only some embodiments of the present disclosure. For those skilled in the art, other accompanying drawings may be obtained according to these accompanying drawings without any creative work.
  • FIG. 1 is a structural diagram of an electrode transfer film of the present disclosure;
  • FIG. 2 is a structural diagram of electrodes having a comb-like structure according to an embodiment of the present disclosure; and
  • FIG. 3 is a structural diagram of electrodes having a honeycomb structure according to an embodiment of the present disclosure.
  • DETAILED DESCRIPTION OF EMBODIMENTS
  • Embodiments are described in detail below in conjunction with the companying drawings. However, the embodiments are not intended to limit the disclosure. Any changes of structure, method or function made by those skilled in the art based on the embodiments fall within the protection scope of the present disclosure.
  • A hyperfine electrode transfer film for a solar battery is disclosed. Referring to FIG. 1 , the electrode transfer film includes a substrate 10, a release layer 20, a resin layer 30 and a hot-melt adhesive layer 40 from bottom to top. Electrode trenches 31 are formed in the resin layer 30, and electrodes 50 are formed in the electrode trenches 31.
  • The layers of the disclosure are described as follows.
  • The substrate 10 normally includes a plastic film or a piece of paper.
  • The release layer 20 includes a film having a surface separability. Normally, in order to increase a release force of the plastic film or the paper, the release layer is formed by performing a plasma process or a fluoridization process on the plastic film or the paper, or applying a silicon release agent on a surface of a film material. No stickiness or slight stickiness exists between the release layer and a certain material which are contacted under a limited condition.
  • In the present disclosure, the release layer is configured to release the resin layer 30 and the hot-melt adhesive layer 40 from the substrate 10. Preferably, the release layer has a thickness of 0.5 μm to 1.2 μm.
  • The resin layer 30 is made of UV photosensitive resin. The electrode trenches 31 are formed by imprinting on the resin layer with a convex mold corresponding to an electrode structure. The electrode trenches 31 are configured to grow the electrodes 50. Preferably, each of the electrode trenches has a linewidth of 2 μm to 50 μm and a depth of 2 μm to 60 μm. Preferably, the electrode trenches have a typical linewidth of 10 μm to 30 μm. The electrodes are made of a mixed material of glass frit and electroconduction slurry. The electrodes are preferably in a form of silver wire, and may be made of metal material in a form of gold wire or copper wire in other embodiments.
  • Referring to FIGS. 2 and 3 , the electrode trenches 31 and the electrodes 50 may have a comb-like structure or a honeycomb structure correspondingly.
  • The hot-melt adhesive layer 40 is volatilized after being sintered at a high temperature. Preferably, the hot-melt adhesive layer 40 has a thickness of 0.5 μm to 2 μm.
  • A method for producing the hyperfine electrode transfer film for a solar battery is also provided in the present disclosure. The method includes step S1 to step S4.
  • In step S1, the substrate 10 is provided.
  • In step S2, the release layer 20 having a thickness of 0.5 μm to 1.2 μm is applied on the substrate 10.
  • In step S3, the resin layer 30 is applied on the release layer 20, and the electrode trenches 31 are formed by imprinting on the resin layer 30 with a convex mold corresponding to an electrode structure. The electrode trenches 31 and the electrodes 50 have a comb-like structure or a honeycomb structure. A linewidth and a depth of each of the electrode trenches are adjusted based on a requirement for electrode electroconductivity.
  • In step S4, the electrodes 50 are formed, by filling the electrode trenches 31 with electroconduction slurry and baking, and the hot-melt adhesive layer 40 having a thickness of 0.5 μm to 2 μm is applied on the electrodes.
  • The electrodes in step S2 are formed by filling the electrode trenches with the glass frit and the electroconduction slurry through brushing, and sintering (baking) at a low temperature less than 150 Celsius degrees.
  • Furthermore, the glass frit and the electroconduction slurry are filled at the same time, or the glass frit is filled first and then the electroconduction slurry is filled. Preferably, the percentage of the electroconduction slurry mass is 80% and may be other percentage of mass in other embodiments.
  • In the present disclosure, a method for applying the hyperfine electrode transfer film for a solar battery includes the following steps:
  • attaching the hot-melt adhesive layer of the electrode transfer film to an anti-reflection layer on the surface of the solar battery, and heating to bond the hot-melt adhesive layer with the anti-reflection layer;
  • removing the release layer and the substrate, to combine the transparent electrodes onto the surface of the solar battery; and
  • sintering at a high temperature, to volatilize the hot-melt adhesive layer, fuse the electrodes to the surface of the solar battery, and completely transfer the hyperfine transparent electrodes.
  • For the hyperfine electrode transfer film for a solar battery, the method for producing the same, and the method for applying the same in the present disclosure, roll-to-roll nanoimprinting is adopted, conductive electrodes are produced continuously on a transparent film and are transferred as a whole, and poor transfer will not occur locally. Furthermore, the hot-melt adhesive layer and the semiconductor substrate are sintered directly at a high temperature, to volatilize the hot-melt adhesive layer and retain the electrodes, thereby achieving reliability, high efficiency and convenience for application.
  • In the present disclosure, the battery includes but is not limited to a solar battery. The solar battery includes but is not limited to an amorphous silicon or microcrystalline silicon film battery, a CIGS battery, a dye-sensitized solar battery, an organic solar battery, a gallium arsenide battery, and the like.
  • In summary, the technical solutions in the present disclosure have the following advantages over the conventional technology.
  • The electrodes are produced continuously on a transparent film by roll-to-roll nanoimprinting, the electrodes are transferred as a whole, and poor transfer will not occur locally.
  • The hot-melt adhesive layer and the semiconductor substrate are sintered directly at a high temperature, to volatilize the hot-melt adhesive layer and retain the electrodes, thereby achieving reliability, high efficiency and convenience for application.
  • A linewidth less than 30 μm can be realized, and the coverage for the electrodes on a surface of a silicon chip is reduced by at least 50%.
  • The electrodes having the honeycomb structure can further reduce the distance for which a current of the solar battery transmits to the electrodes, and the carrier recombination rate, and is advantageous for improving the conversion efficiency.
  • For those skilled in the art, it is apparent that the present disclosure is not limited to the details in the above exemplary embodiments, but can be embodied in other forms without departing from the spirit or basic features of the present disclosure. Therefore, the embodiments should be regarded as exemplars rather than limitation in any aspects. The scope of the present disclosure is defined by the appended claims rather than the above description. All variations within the meaning and scope of equivalents of the claims are included in the present disclosure. Any drawing reference in the claims should not be considered as limitation to a related claim.
  • Furthermore, it should be understood that the technical solutions in the present disclosure are describe with embodiments, but it does not mean that each embodiment only includes one dependent technical solution. The manner of description is only for clearness, and those skilled in the art should treat the description as a whole. The technical solutions in the embodiments can be combined properly to obtain another embodiment understandable by those skilled in the art.

Claims (17)

We claim:
1. A hyperfine electrode transfer film for a solar battery, the electrode transfer film comprising:
a hot-melt adhesive layer;
a resin layer, the resin layer disposed on top of the hot-melt adhesive layer, the resin layer including electrode trenches formed therein, wherein the resin layer is made of UV photosensitive resin, electrodes are further formed in the electrode trenches already formed in the resin layer;
a substrate; and
a release layer disposed on top of the substrate and covering an entire surface of the substrate, wherein the release layer is formed by performing a plasma process or a fluoridization process on a plastic film or a paper, or applying a silicon release agent on a surface of a film material allowing a surface separability of the release layer from the resin layer.
2. The hyperfine electrode transfer film as recited in claim 1, wherein the electrode trenches and the electrodes have a comb-like structure or a honeycomb structure corresponding to the solar battery.
3. The hyperfine electrode transfer film as recited in claim 1, wherein the electrodes are made of a mixed material of glass microsphere frit and electroconduction slurry.
4. The hyperfine electrode transfer film as recited in claim 1, wherein the release layer has a thickness between 0.5 μm and 1.2 μm, and the hot-melt adhesive layer has a thickness between 0.5 μm and 2.0 μm.
5. The hyperfine electrode transfer film as recited in claim 1, wherein each of the electrode trenches has a linewidth between 2 μm and 50 μm and a depth between 2 μm and 60 μm.
6. The hyperfine electrode transfer film as recited in claim 5, wherein each of the electrode trenches has a linewidth between 10 μm and 30 μm.
7. The hyperfine electrode transfer film as recited in claim 1, wherein the release layer is formed by performing a plasma process or a fluoridization process on the plastic film or the paper, or applying a silicon release agent on a surface of a film material.
8. The hyperfine electrode transfer film as recited in claim 7, wherein there is no stickiness or slight stickiness between the release layer and the resin layer contacted under a limited condition.
9. The hyperfine electrode transfer film as recited in claim 8, wherein the electrode trenches are formed by imprinting on the resin layer with a convex mold corresponding to an electrode structure, wherein a linewidth and a depth of each of the electrode trenches are adjusted based on a requirement for electrode electroconductivity.
10. The hyperfine electrode transfer film as recited in claim 8, wherein each of the electrodes in one of the electrode trenches is filled with a mixed material of glass frit and electroconduction slurry, wherein the electrodes do not extend to the release layer.
11. The hyperfine electrode transfer film as recited in claim 8, wherein the hot-melt adhesive layer is volatilized after being sintered at a high temperature, to fuse the electrodes to a surface of the solar battery.
12. The hyperfine electrode transfer film as recited in claim 11, wherein the hot-melt adhesive layer is attached to an anti-reflection layer on a surface of the solar battery.
13. The hyperfine electrode transfer film as recited in claim 12, wherein the hot-melt adhesive layer and the anti-reflection layer are boned via a heating process.
14. The hyperfine electrode transfer film as recited in claim 13, wherein the hot-melt adhesive layer is sintered at a high temperature to be volatilized to fuse the electrodes to the surface of the solar battery.
15. A method for producing a hyperfine electrode transfer film for a solar battery, the method comprising:
providing a substrate;
applying a release layer on the substrate, wherein the release layer covers an entire surface of the substrate, the release layer is formed by performing a plasma process or a fluoridization process on a plastic film, a piece of paper, or applying a silicon release agent on a surface of a film material;
applying a resin layer on the release layer, the resin layer made of a type of photosensitive resin, and
forming a plurality of electrode trenches by imprinting in the resin layer with a mold corresponding to an electrode structure, wherein a linewidth or a depth of each of the electrode trenches is adjusted based on a requirement for electrode electroconductivity;
growing a plurality of electrodes, each of the electrodes in one of the electrode trenches, by filling the one of the electrode trenches with a mixed material of glass frit and electroconduction slurry, wherein the electrodes do not extend to the release layer; and
applying a hot-melt adhesive layer on the electrodes, wherein the hot-melt adhesive layer covering an entire surface of the resin layer is volatilized after being sintered at a high temperature, to fuse the electrodes to a surface of the solar battery.
16. The method according to claim 15, further comprising:
attaching the hot-melt adhesive layer to an anti-reflection layer on the surface of the solar battery, and
heating to bond the hot-melt adhesive layer with the anti-reflection layer.
17. The method according to claim 16, further comprising:
removing the release layer and the substrate; and
sintering at a high temperature to volatilize the hot-melt adhesive layer, fuse the electrodes to the surface of the solar battery.
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