JPS5376751A - Anodic oxidation method - Google Patents

Anodic oxidation method

Info

Publication number
JPS5376751A
JPS5376751A JP15194476A JP15194476A JPS5376751A JP S5376751 A JPS5376751 A JP S5376751A JP 15194476 A JP15194476 A JP 15194476A JP 15194476 A JP15194476 A JP 15194476A JP S5376751 A JPS5376751 A JP S5376751A
Authority
JP
Japan
Prior art keywords
anodic oxidation
oxidation method
semiinsulation
oxide film
type substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15194476A
Other languages
Japanese (ja)
Inventor
Toshiaki Ikoma
Hirokuni Tokuda
Kiyoo Kamei
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP15194476A priority Critical patent/JPS5376751A/en
Priority to US05/825,720 priority patent/US4157610A/en
Publication of JPS5376751A publication Critical patent/JPS5376751A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To form an oxide film in desired positions on a semiinsulation type substrate by performing anodic oxidation under light radiation.
COPYRIGHT: (C)1978,JPO&Japio
JP15194476A 1976-12-20 1976-12-20 Anodic oxidation method Pending JPS5376751A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP15194476A JPS5376751A (en) 1976-12-20 1976-12-20 Anodic oxidation method
US05/825,720 US4157610A (en) 1976-12-20 1977-08-18 Method of manufacturing a field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15194476A JPS5376751A (en) 1976-12-20 1976-12-20 Anodic oxidation method

Publications (1)

Publication Number Publication Date
JPS5376751A true JPS5376751A (en) 1978-07-07

Family

ID=15529612

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15194476A Pending JPS5376751A (en) 1976-12-20 1976-12-20 Anodic oxidation method

Country Status (1)

Country Link
JP (1) JPS5376751A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008130709A (en) * 2006-11-20 2008-06-05 Ricoh Co Ltd Manufacturing method of semiconductor laser, semiconductor laser manufacturing apparatus, the semiconductor laser, optical scanning apparatus, image forming device, optical transmission module, and optical transmission system

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3345274A (en) * 1964-04-22 1967-10-03 Westinghouse Electric Corp Method of making oxide film patterns
US3419480A (en) * 1965-03-12 1968-12-31 Westinghouse Electric Corp Anodic oxidation

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3345274A (en) * 1964-04-22 1967-10-03 Westinghouse Electric Corp Method of making oxide film patterns
US3419480A (en) * 1965-03-12 1968-12-31 Westinghouse Electric Corp Anodic oxidation

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008130709A (en) * 2006-11-20 2008-06-05 Ricoh Co Ltd Manufacturing method of semiconductor laser, semiconductor laser manufacturing apparatus, the semiconductor laser, optical scanning apparatus, image forming device, optical transmission module, and optical transmission system

Similar Documents

Publication Publication Date Title
JPS521497A (en) Forming method of transparent conductive indium oxide film
JPS5376751A (en) Anodic oxidation method
JPS51126073A (en) Pattern printing equpment made available by photo-etching method
JPS5287649A (en) Constant current bias circuit
JPS5287985A (en) Plasma etching method
JPS5421266A (en) Forming method of semiconductor oxide film
JPS5323056A (en) Constant current biasing circuit
JPS5380168A (en) Exposure method for electronic beam
JPS5421273A (en) Manufacture for photo mask
JPS5376750A (en) Anodic oxidation method
JPS525270A (en) Photo-mask
JPS5353266A (en) Probe card
JPS5382173A (en) Positioning method
JPS5387666A (en) Anodic oxidation method
JPS51147177A (en) A treatment method of tantaum oxide
JPS5329346A (en) Process of electrodeposition
JPS5346222A (en) Solid state pick up unit
JPS5227280A (en) Method to form pinholes
JPS51138977A (en) A drive mechanism
JPS547941A (en) Production of optical diffusive plate
JPS5431281A (en) Optical exposure mask
JPS5436181A (en) Manufacture for semiconductor device
JPS526543A (en) Acoustic-optical element
JPS5316631A (en) Photographic exposure method
JPS51141583A (en) Method for producing an electrode for use semiconductor units