JPS5643641A - Photomask - Google Patents
PhotomaskInfo
- Publication number
- JPS5643641A JPS5643641A JP12116279A JP12116279A JPS5643641A JP S5643641 A JPS5643641 A JP S5643641A JP 12116279 A JP12116279 A JP 12116279A JP 12116279 A JP12116279 A JP 12116279A JP S5643641 A JPS5643641 A JP S5643641A
- Authority
- JP
- Japan
- Prior art keywords
- photomask
- mask
- dust
- substrate
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
- G03F1/48—Protective coatings
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
Abstract
PURPOSE:To prevent dust from attaching to the surface of a photomask, and to enhance IC fabrication yield, by covering the surfaces of the mask formed on part of a transparent substrate and the residual part of substrate with a conductive film. CONSTITUTION:Mask 2 is formed on transparent glass substrate 1 with a metal such as Cr, a metal oxide, or the like. Conductive film 3, for covering substrate 1 and mask 2, such as a film of SnO2 transmitting a light of 100-500nm wavelength region is formed by the vacuum sputtering or vapor deposition method. Film 3 may be formed only on the side of mask 2, but films 3 formed on both the sides are more effective. Films 3 are grounded and an opposite dust collecting electrode is subjected to a positive DC voltage, and the photomask is conserved in such conditions. Dust in the air or an inert gas is charged negatively, and attracted to electrode 4, and the photomask is conserved in a superior state, thus permitting a photoresist pattern to be prevented from causing troubles due to dust in IC fabrication using this photomask.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12116279A JPS5643641A (en) | 1979-09-19 | 1979-09-19 | Photomask |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12116279A JPS5643641A (en) | 1979-09-19 | 1979-09-19 | Photomask |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5643641A true JPS5643641A (en) | 1981-04-22 |
Family
ID=14804369
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP12116279A Pending JPS5643641A (en) | 1979-09-19 | 1979-09-19 | Photomask |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5643641A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59146954A (en) * | 1982-12-28 | 1984-08-23 | Seiko Epson Corp | See-through mask |
EP0323264A2 (en) * | 1987-12-29 | 1989-07-05 | Canon Kabushiki Kaisha | X-ray exposure process using an electrically conductive x-ray mask |
US7961244B2 (en) * | 1998-03-31 | 2011-06-14 | Nikon Corporation | Optical filter and optical device provided with this optical filter |
-
1979
- 1979-09-19 JP JP12116279A patent/JPS5643641A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59146954A (en) * | 1982-12-28 | 1984-08-23 | Seiko Epson Corp | See-through mask |
EP0323264A2 (en) * | 1987-12-29 | 1989-07-05 | Canon Kabushiki Kaisha | X-ray exposure process using an electrically conductive x-ray mask |
US7961244B2 (en) * | 1998-03-31 | 2011-06-14 | Nikon Corporation | Optical filter and optical device provided with this optical filter |
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