JPS5567211A - Production of elastic surface wave device - Google Patents

Production of elastic surface wave device

Info

Publication number
JPS5567211A
JPS5567211A JP13988978A JP13988978A JPS5567211A JP S5567211 A JPS5567211 A JP S5567211A JP 13988978 A JP13988978 A JP 13988978A JP 13988978 A JP13988978 A JP 13988978A JP S5567211 A JPS5567211 A JP S5567211A
Authority
JP
Japan
Prior art keywords
film
resistor
idt
photo mask
positive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13988978A
Other languages
Japanese (ja)
Inventor
Hitoshi Yanagihara
Yoshitsugu Miura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP13988978A priority Critical patent/JPS5567211A/en
Publication of JPS5567211A publication Critical patent/JPS5567211A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/08—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves

Abstract

PURPOSE:To make it possible to form comb-shaped electrodes (IDT) on a piezo- electric thin film withiut damage of the piezo-electric thin film by using a photo mask to combine a negative resistor film and a positive resistor film. CONSTITUTION:After sputtering ZnO 2 onto substrate 1, negative resistor 4 having a good heatproof property is formed for formation of comb-shaped electrodes IDT. Next, Al film 3 which is the IDT material is formed throughout the surface of the substrate by evaporation, and positive resistor 4' is covered with the same photo mask as the photo mask used for formation of negative resistor 4. Under this state, ZnO 2 is not exposed. Then, the Al film in the needless part is eliminated by chemical etching. Next, plasma asher is used to eliminate positive and negative resistor films simultaneously.
JP13988978A 1978-11-15 1978-11-15 Production of elastic surface wave device Pending JPS5567211A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13988978A JPS5567211A (en) 1978-11-15 1978-11-15 Production of elastic surface wave device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13988978A JPS5567211A (en) 1978-11-15 1978-11-15 Production of elastic surface wave device

Publications (1)

Publication Number Publication Date
JPS5567211A true JPS5567211A (en) 1980-05-21

Family

ID=15255950

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13988978A Pending JPS5567211A (en) 1978-11-15 1978-11-15 Production of elastic surface wave device

Country Status (1)

Country Link
JP (1) JPS5567211A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01259611A (en) * 1988-04-11 1989-10-17 Fujitsu Ltd Manufacture of surface acoustic wave device
US6424075B1 (en) * 2001-01-26 2002-07-23 Murata Manufacturing Co., Ltd. Surface acoustic wave device and production method thereof

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01259611A (en) * 1988-04-11 1989-10-17 Fujitsu Ltd Manufacture of surface acoustic wave device
US6424075B1 (en) * 2001-01-26 2002-07-23 Murata Manufacturing Co., Ltd. Surface acoustic wave device and production method thereof

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