JPS5760335A - Exposure mask - Google Patents

Exposure mask

Info

Publication number
JPS5760335A
JPS5760335A JP13441480A JP13441480A JPS5760335A JP S5760335 A JPS5760335 A JP S5760335A JP 13441480 A JP13441480 A JP 13441480A JP 13441480 A JP13441480 A JP 13441480A JP S5760335 A JPS5760335 A JP S5760335A
Authority
JP
Japan
Prior art keywords
mask
light
substrate
rear surfaces
shield layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13441480A
Other languages
Japanese (ja)
Inventor
Isao Tanabe
Masahiro Dan
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP13441480A priority Critical patent/JPS5760335A/en
Publication of JPS5760335A publication Critical patent/JPS5760335A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G03F1/40—Electrostatic discharge [ESD] related features, e.g. antistatic coatings or a conductive metal layer around the periphery of the mask substrate
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G03F1/48—Protective coatings

Abstract

PURPOSE:To decrease the electrostatic charge quantity of an exposure mask consisting of a light transmitable substrate, a shield layer, etc. and prevent the occurrence of electric discharge phenomena, sticking of dust, etc. by providing a light transmittable conductive layer on the light transmittable substrate including the surface of the shield layer in said mask. CONSTITUTION:A light shieldging Cr film 7, and a CrO film 8 as a reflection preventing film are successively formed over the entire surface of a transparent glass substrate 2, and is patterned, whereby a shield layer 3 of prescribed patterns is formed. Thence, indium oxide is deposited by vapor deposition or the like over the entire part of the front and rear surfaces of the substrate 2 to form indium oxide films 4, 6 respectively, whereby an intended exposure mask 1 is obtained. Since the front and rear surfaces of the mask 1 are topcoated by the films 4, 6, the specific resistance of the entire part of the front and rear surfaces is lowered, and the electrostatic charge quantity of the mask 1 is reduced. Particularly the electric discharge between the adjacent edges 3a of the layer 3 is prevented and the breakdown and the like of the edge 3a are prevented.
JP13441480A 1980-09-29 1980-09-29 Exposure mask Pending JPS5760335A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13441480A JPS5760335A (en) 1980-09-29 1980-09-29 Exposure mask

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13441480A JPS5760335A (en) 1980-09-29 1980-09-29 Exposure mask

Publications (1)

Publication Number Publication Date
JPS5760335A true JPS5760335A (en) 1982-04-12

Family

ID=15127819

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13441480A Pending JPS5760335A (en) 1980-09-29 1980-09-29 Exposure mask

Country Status (1)

Country Link
JP (1) JPS5760335A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5389474A (en) * 1990-04-19 1995-02-14 Sharp Kabushiki Kaisha Mask for photolithography
WO2000036467A1 (en) * 1998-12-14 2000-06-22 Koninklijke Philips Electronics N.V. Photomask provided with an esd-precluding envelope

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5389474A (en) * 1990-04-19 1995-02-14 Sharp Kabushiki Kaisha Mask for photolithography
WO2000036467A1 (en) * 1998-12-14 2000-06-22 Koninklijke Philips Electronics N.V. Photomask provided with an esd-precluding envelope
US6309781B1 (en) 1998-12-14 2001-10-30 U.S. Philips Corporation Photomask provided with an ESD-precluding envelope

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