JPS57190455A - Adhesion type image sensor - Google Patents
Adhesion type image sensorInfo
- Publication number
- JPS57190455A JPS57190455A JP56074198A JP7419881A JPS57190455A JP S57190455 A JPS57190455 A JP S57190455A JP 56074198 A JP56074198 A JP 56074198A JP 7419881 A JP7419881 A JP 7419881A JP S57190455 A JPS57190455 A JP S57190455A
- Authority
- JP
- Japan
- Prior art keywords
- light
- single layer
- transparent
- layer
- preventing film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N1/00—Scanning, transmission or reproduction of documents or the like, e.g. facsimile transmission; Details thereof
- H04N1/024—Details of scanning heads ; Means for illuminating the original
- H04N1/028—Details of scanning heads ; Means for illuminating the original for picture information pick-up
- H04N1/03—Details of scanning heads ; Means for illuminating the original for picture information pick-up with photodetectors arranged in a substantially linear array
- H04N1/031—Details of scanning heads ; Means for illuminating the original for picture information pick-up with photodetectors arranged in a substantially linear array the photodetectors having a one-to-one and optically positive correspondence with the scanned picture elements, e.g. linear contact sensors
Abstract
PURPOSE:To improve the resolusion of an image sensor by applying reflection preventing coating to the surface of a transparent protecting layer to reduce invalid light. CONSTITUTION:A light-shielding layer 7 is applied to the surface of a transparent substrate 6 such as glass except a transparent window 13 and the array of photoelectric conversion elements 8 using photoconductive materials such as CdS and Se is formed on the surface of the light-sheilding layer 7. A transparent electrode 12 is formed on one side of the photoelectric conversion elements 8 and an opaque electrode 9 such as Al and InSn is formed on the other side. Adherent 14 such as silicone resin and lens bond is applied to the surface of the elements 8, a thin glass plate 15 is fitted to the surface of the adherent and a single layer relfection preventing film 16 is applied to the surface of the thin glass plate 15 by vacuum evapolating or sputtering a material with low refractive index such as magnesium fluoride (MgF2) and rock crystal (3NaF.AlF2). When the thickness, refractive index of the single layer reflection preventing film 16 and the wavelength of incident light flux 10 are d, n and lambda respectively, the thickness of the single layer reflection preventing film 16 is determined so that nd lambda/4 is satisfied.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56074198A JPS57190455A (en) | 1981-05-19 | 1981-05-19 | Adhesion type image sensor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56074198A JPS57190455A (en) | 1981-05-19 | 1981-05-19 | Adhesion type image sensor |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS57190455A true JPS57190455A (en) | 1982-11-24 |
Family
ID=13540241
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP56074198A Pending JPS57190455A (en) | 1981-05-19 | 1981-05-19 | Adhesion type image sensor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57190455A (en) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59141278A (en) * | 1983-02-02 | 1984-08-13 | Fuji Xerox Co Ltd | Photoelectric conversion element and manufacture thereof |
JPS61124168A (en) * | 1984-11-20 | 1986-06-11 | Matsushita Electric Ind Co Ltd | Contact type image sensor |
JPS63226064A (en) * | 1986-10-07 | 1988-09-20 | Canon Inc | Image reading device |
JPS63232367A (en) * | 1986-10-07 | 1988-09-28 | Canon Inc | Image reader |
US4908718A (en) * | 1987-07-09 | 1990-03-13 | Canon Kabushiki Kaisha | Image reading apparatus having a light shielding layer arranged on the sides of the substrate and protective layers of a photo sensor |
US5068713A (en) * | 1988-08-18 | 1991-11-26 | Seiko Epson Corporation | Solid state image sensing device |
EP0843362A1 (en) * | 1996-11-19 | 1998-05-20 | Nec Corporation | Solid state imaging device having a microlens array covered by a reflection preventing film |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5261983A (en) * | 1975-11-18 | 1977-05-21 | Seiko Epson Corp | Solar cell |
JPS53148993A (en) * | 1977-06-01 | 1978-12-26 | Toshiba Corp | Semiconductor photoelectric conversion element |
JPS559484A (en) * | 1978-07-07 | 1980-01-23 | Sharp Corp | Coating film for phtoelectric transducer |
JPS5582471A (en) * | 1978-12-13 | 1980-06-21 | Ibm | Light converter |
-
1981
- 1981-05-19 JP JP56074198A patent/JPS57190455A/en active Pending
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5261983A (en) * | 1975-11-18 | 1977-05-21 | Seiko Epson Corp | Solar cell |
JPS53148993A (en) * | 1977-06-01 | 1978-12-26 | Toshiba Corp | Semiconductor photoelectric conversion element |
JPS559484A (en) * | 1978-07-07 | 1980-01-23 | Sharp Corp | Coating film for phtoelectric transducer |
JPS5582471A (en) * | 1978-12-13 | 1980-06-21 | Ibm | Light converter |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59141278A (en) * | 1983-02-02 | 1984-08-13 | Fuji Xerox Co Ltd | Photoelectric conversion element and manufacture thereof |
JPS61124168A (en) * | 1984-11-20 | 1986-06-11 | Matsushita Electric Ind Co Ltd | Contact type image sensor |
JPS63226064A (en) * | 1986-10-07 | 1988-09-20 | Canon Inc | Image reading device |
JPS63232367A (en) * | 1986-10-07 | 1988-09-28 | Canon Inc | Image reader |
US4908718A (en) * | 1987-07-09 | 1990-03-13 | Canon Kabushiki Kaisha | Image reading apparatus having a light shielding layer arranged on the sides of the substrate and protective layers of a photo sensor |
US5068713A (en) * | 1988-08-18 | 1991-11-26 | Seiko Epson Corporation | Solid state image sensing device |
EP0843362A1 (en) * | 1996-11-19 | 1998-05-20 | Nec Corporation | Solid state imaging device having a microlens array covered by a reflection preventing film |
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