JPH0524195Y2 - - Google Patents

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Publication number
JPH0524195Y2
JPH0524195Y2 JP2179787U JP2179787U JPH0524195Y2 JP H0524195 Y2 JPH0524195 Y2 JP H0524195Y2 JP 2179787 U JP2179787 U JP 2179787U JP 2179787 U JP2179787 U JP 2179787U JP H0524195 Y2 JPH0524195 Y2 JP H0524195Y2
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Japan
Prior art keywords
light
electrode
optical sensor
receiving element
transparent
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JP2179787U
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JPS63129835U (en
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Description

【考案の詳細な説明】 〔産業上の利用分野〕 本考案は、アモルフアスシリコン等の非晶質半
導体を用いた、遮光性を備える光センサに関す
る。
[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to an optical sensor that uses an amorphous semiconductor such as amorphous silicon and has a light blocking property.

〔従来技術〕[Prior art]

可視光領域に感度を有するアモルフアス半導体
をその受光素子として用いた光センサが開発さ
れ、実用化されている。アモルフアス半導体を用
いた光センサは、ガラス等の透光性絶縁基板上に
形成可能であつて、この基板上に入射光側の電極
となる透明導電膜と、アモルフアスシリコン等か
らなる膜状の非晶質半導体層と、裏面電極とを順
次フオトリソグラフイ手法等により積層し、複数
個の微細な受光素子をマトリツクス状に配してパ
ターニングする。さらにこれら受光素子表面を透
明樹脂によつてコーテイングして受光素子を保護
しており、微細な受光素子をマトリツクス状に光
センサ全体に分散して配することによつて透光性
を有する、所謂透光型の光センサを実現し、カメ
ラの自動焦点検出素子等に応用分野を広げてい
る。光センサへの入射光は、透光性絶縁基板から
受光素子へ入射して光電変換されるとともに、受
光素子の部分以外に入射した光は透過される。
Optical sensors using amorphous semiconductors that are sensitive in the visible light region as their light receiving elements have been developed and put into practical use. An optical sensor using an amorphous semiconductor can be formed on a transparent insulating substrate such as glass, and on this substrate is a transparent conductive film that becomes an electrode on the incident light side, and a film-like film made of amorphous silicon or the like. The amorphous semiconductor layer and the back electrode are sequentially laminated by photolithography or the like, and a plurality of fine light-receiving elements are arranged in a matrix and patterned. Furthermore, the surface of these light receiving elements is coated with a transparent resin to protect the light receiving elements, and by distributing fine light receiving elements in a matrix over the entire optical sensor, it has a so-called translucent property. We have realized a translucent optical sensor and are expanding its application to automatic focus detection elements for cameras. Light incident on the optical sensor enters the light receiving element from the light-transmitting insulating substrate and is photoelectrically converted, while light incident on areas other than the light receiving element is transmitted.

また、光センサへの入射光を遮断して透光型光
センサの不透明化を随時行い得る光センサとして
は、第6図にその構造を示すような液晶を用いた
光センサがある。この光センサ20は、前述の如
く、受光素子5を積層形成した透光性絶縁基板1
の反対面に透明電極3をフオトリソグラフイ手法
等のエツチングによつて形成するとともに、この
基板1と適長離隔させ、前述と同様にエツチング
によりその一面に透明電極4を形成した別の透光
性絶縁基板2を配し、これらの透明電極3,4の
間に液晶7を封入してシヤツタ機構を付与するも
のである。即ち、光は、基板2,液晶7,基板1
を経て受光素子5に入射する一方、透明電極3,
4の電圧が所定値以上になると液晶7が駆動され
て透明電極4側からの入射光を遮断し、光センサ
20を不透明にする。なお、透光性絶縁基板1,
2において、透明電極3,4を設けた面の反対面
には、夫々偏光板8,9が設けられ、入射光の中
から直線偏光を取り出し受光素子5へ入射させ
る。また、受光素子5は樹脂11によつて表面が
コートされ、外部の衝撃から保護される。
Further, as an optical sensor that can block incident light to the optical sensor and make the transmissive optical sensor opaque at any time, there is an optical sensor using liquid crystal, the structure of which is shown in FIG. As described above, this optical sensor 20 includes a light-transmitting insulating substrate 1 on which a light-receiving element 5 is laminated.
A transparent electrode 3 is formed on the opposite surface of the substrate 1 by etching such as photolithography, and another transparent electrode 4 is formed on one surface of the substrate 1 at an appropriate distance apart from the substrate 1 by etching in the same manner as described above. A shutter mechanism is provided by disposing a transparent insulating substrate 2 and sealing a liquid crystal 7 between these transparent electrodes 3 and 4. That is, the light passes through the substrate 2, the liquid crystal 7, and the substrate 1.
The light enters the light receiving element 5 through the transparent electrode 3,
When the voltage at 4 exceeds a predetermined value, the liquid crystal 7 is driven to block the incident light from the transparent electrode 4 side, making the optical sensor 20 opaque. Note that the transparent insulating substrate 1,
2, polarizing plates 8 and 9 are provided on opposite surfaces of the surfaces on which the transparent electrodes 3 and 4 are provided, respectively, and linearly polarized light is extracted from the incident light and made to enter the light receiving element 5. Further, the surface of the light receiving element 5 is coated with resin 11 to protect it from external impact.

〔考案が解決しようとする問題点〕[Problem that the invention attempts to solve]

ところで、従来のシヤツタ機構を備えた光セン
サは、第6図に示す如く透光性絶縁基板1に対し
て一面に受光素子5、他面に液晶駆動用の透明電
極3を形成する両面エツチングが必要であつて、
複雑な製造工程を要するという問題点があつた。
By the way, as shown in FIG. 6, a conventional optical sensor equipped with a shutter mechanism uses double-sided etching to form a light-receiving element 5 on one side of a light-transmitting insulating substrate 1 and a transparent electrode 3 for driving a liquid crystal on the other side. It is necessary,
The problem was that it required a complicated manufacturing process.

本考案はこのような問題点を解決するためにな
されたものであつて、シヤツタ機構を有するとと
もに、製造工程の簡略な光センサの提供を目的と
する。
The present invention has been made to solve these problems, and aims to provide an optical sensor that has a shutter mechanism and has a simple manufacturing process.

〔問題点を解決するための手段〕[Means for solving problems]

本考案は、裏面導電膜、非晶質半導体層、透明
導電膜を積層した受光素子を絶縁基板の一面側に
配置してなる光センサにおいて、前記絶縁基板の
一面に設けられた電極と、該電極の表面に配され
た絶縁体と、前記電極から適長離隔して配された
透明電極と、前記電極と透明電極との間に封入さ
れており、電極と透明電極とによつて駆動される
遮光物質とを備え、前記受光素子が前記絶縁基板
に絶縁体を介して配置されたことを特徴とする。
The present invention provides an optical sensor in which a light-receiving element in which a back conductive film, an amorphous semiconductor layer, and a transparent conductive film are laminated is disposed on one surface of an insulating substrate, and an electrode provided on one surface of the insulating substrate; An insulator disposed on the surface of the electrode, a transparent electrode disposed at an appropriate distance from the electrode, and an insulator sealed between the electrode and the transparent electrode, and driven by the electrode and the transparent electrode. and a light-shielding material, and the light-receiving element is arranged on the insulating substrate with an insulator interposed therebetween.

〔作用〕[Effect]

本考案の光センサは、絶縁基板の一面に電極を
設け、この電極の表面に、裏面導電膜、非晶質半
導体層、透明導電膜の順序で構成される受光素子
を絶縁体を介して積層形成し、電極において受光
素子が形成された側に適長離隔して透明電極を設
け、電極と透明電極との間に遮光物質を封入し、
電極と透明電極への印加電圧の高低に基づいて遮
光物質を駆動し、透明電極側からの入射光を遮断
する。
In the optical sensor of the present invention, an electrode is provided on one side of an insulating substrate, and a light-receiving element consisting of a back conductive film, an amorphous semiconductor layer, and a transparent conductive film is laminated on the surface of this electrode via an insulator. A transparent electrode is provided at an appropriate distance from the electrode on the side where the light receiving element is formed, and a light shielding material is sealed between the electrode and the transparent electrode.
The light-shielding material is driven based on the level of voltage applied to the electrode and the transparent electrode to block incident light from the transparent electrode side.

〔実施例〕〔Example〕

以下、本考案をその実施例を示す図面に基づき
詳述する。第1図は本考案の入射光を制御する物
質として液晶を用いた場合の光センサの構造を模
式的に示した部分断面図である。図中1,2は所
要長離隔して設けられたガラス等からなる透光性
絶縁基板であつて、これらの各一面1a,2a
に、酸化スズ(SnO2)、酸化インジウムスズ
(ITO)等の透光性導電酸化物(TCO)を蒸着法
または熱CVD法等によつて被着せしめた透明導
電膜に、後述する液晶駆動用の透明電極3,4
が、フオトリソグラフイ手法等によりパターニン
グ形成されている。一方の透明電極3の表面に
は、基板側から受光素子用電極53、膜状光電素
子層52、受光素子用電極51の順にて積層形成
された受光素子5が受光素子用電極53の基板側
の面より少し広く形成された絶縁膜6を介し、フ
オトリソグラフイ手法等を用いて、一次元的また
は二次元的に、所要数、分散配置される。各受光
素子間は、受光素子用電極51又は53が互いに
電気的に連なるべく配線され、その配線部は、こ
れよりも少し広く形成された絶縁膜によつて、透
明電極3と絶縁されている。なお、受光素子用電
極51,53には、前記透明電極3,4と同様の
透明導電膜、膜状光電素子層52にはアモルフア
スシリコン系半導体、絶縁膜6には透光性を有す
るSi3N4またはSiO2等を用いる。
Hereinafter, the present invention will be described in detail based on drawings showing embodiments thereof. FIG. 1 is a partial sectional view schematically showing the structure of an optical sensor in which liquid crystal is used as a substance for controlling incident light according to the present invention. In the figure, reference numerals 1 and 2 are translucent insulating substrates made of glass or the like that are spaced apart by a required length, and one side 1a and 2a of each of these are provided.
A liquid crystal drive device (described later) is applied to a transparent conductive film on which a transparent conductive oxide (TCO) such as tin oxide (SnO 2 ) or indium tin oxide (ITO) is deposited by vapor deposition or thermal CVD. Transparent electrodes 3, 4 for
is formed by patterning using photolithography or the like. On the surface of one transparent electrode 3, a light-receiving element 5 is formed by laminating a light-receiving element electrode 53, a film-like photoelectric element layer 52, and a light-receiving element electrode 51 in this order from the substrate side. A required number of wafers are distributed one-dimensionally or two-dimensionally through an insulating film 6 formed slightly wider than the surface of , using a photolithography method or the like. Between each light receiving element, electrodes 51 or 53 for light receiving elements are wired so as to be electrically connected to each other, and the wiring portion is insulated from the transparent electrode 3 by an insulating film formed a little wider than this. . Note that the light-receiving element electrodes 51 and 53 are made of a transparent conductive film similar to the transparent electrodes 3 and 4, the film-like photoelectric element layer 52 is made of an amorphous silicon-based semiconductor, and the insulating film 6 is made of Si having a light-transmitting property. 3 N 4 or SiO 2 is used.

さらに、2枚の透光性絶縁基板1,2の間〓に
液晶7が封入されており、液晶7は、前記透明電
極3,4への印加電圧の高低に基づき駆動され
る。また、透光性絶縁基板1,2夫々の他面1
b,2bには、偏光板8,9が設けられ、入射光
の中から直線偏光を取り出し透過させる。
Further, a liquid crystal 7 is sealed between the two transparent insulating substrates 1 and 2, and the liquid crystal 7 is driven based on the level of voltage applied to the transparent electrodes 3 and 4. Further, the other surface 1 of each of the transparent insulating substrates 1 and 2
Polarizing plates 8 and 9 are provided on b and 2b, and linearly polarized light is extracted from the incident light and transmitted.

即ち、透光性絶縁基板1,2の一方は、その表
面に受光素子5を形成保持する素子形成基板、他
方は、受光素子5を外部の衝撃から保護する素子
カバー用基板であるといえる。光は両方の透光性
絶縁基板1,2側から入射が能であり、素子形成
基板たる透光性絶縁基板1を透過した光は、透明
電極3、絶縁膜6、受光素子用電極53を経て、
膜状光電素子52へ入射し、光電変換され、ま
た、素子カバー用基板たる透光性絶縁基板2を透
過した光は、透明電極4、液晶7、受光素子用電
極51を経て、膜状光電素子52へ入射し、光電
変換される。さらに、受光素子5へ入射した光以
外は反対方向へ透過する。また、透明電極3,4
に所定値以上の電圧が負荷され液晶7が駆動され
ると、素子カバー用基板たる透光性絶縁基板2側
からの入射光は遮られて受光素子5へは入射せ
ず、シヤツタ機構が実現する。
That is, one of the light-transmitting insulating substrates 1 and 2 can be said to be an element forming substrate on the surface of which the light receiving element 5 is formed and held, and the other is an element cover substrate that protects the light receiving element 5 from external impact. Light can enter from both sides of the transparent insulating substrates 1 and 2, and the light that has passed through the transparent insulating substrate 1, which is the element forming substrate, passes through the transparent electrode 3, the insulating film 6, and the electrode 53 for the light-receiving element. Through,
The light that enters the film-like photoelectric element 52, is photoelectrically converted, and passes through the light-transmitting insulating substrate 2, which is the element cover substrate, passes through the transparent electrode 4, the liquid crystal 7, and the light-receiving element electrode 51, and then becomes the film-like photoelectric element. The light enters the element 52 and is photoelectrically converted. Furthermore, light other than the light incident on the light receiving element 5 is transmitted in the opposite direction. In addition, transparent electrodes 3 and 4
When a voltage higher than a predetermined value is applied to the liquid crystal 7 and the liquid crystal 7 is driven, the incident light from the side of the transparent insulating substrate 2 serving as the element cover substrate is blocked and does not enter the light receiving element 5, thereby realizing a shutter mechanism. do.

第2図は、複数の受光素子がマトリツクス状に
配された本考案の光センサを、素子カバー用基板
たる透光性絶縁基板2側から液晶を通して見た略
示平面図であつて、第3図はその部分拡大図であ
る。各受光素子5の両受光素子用電極51,53
は夫々別個に横方向または縦方向へと電気的に連
なる導電パターンを形成し、この導電パターンよ
り広く設けた絶縁膜6によつて透明電極3と絶縁
される。また、液晶7が駆動されない場合は、光
センサの両面から光が入射し得るが、第4図に示
す如く液晶7が駆動されると、素子カバー用基板
側からの入射光は遮られ、一方向からのみの入射
となる。なお、本実施例では光センサの全面にわ
たつて液晶を封入し、前受光素子への入射光を制
御する構成としたが、第5図に示す如く、光セン
サの一部に液晶駆動用の透明電極を設け、一部分
のみ液晶7を封入して入射光を制御する構造とす
ることも可能である。
FIG. 2 is a schematic plan view of the optical sensor of the present invention in which a plurality of light-receiving elements are arranged in a matrix, as seen through the liquid crystal from the translucent insulating substrate 2 side, which is the element cover substrate. The figure is a partially enlarged view. Both light receiving element electrodes 51 and 53 of each light receiving element 5
form conductive patterns that are electrically continuous in the horizontal or vertical direction, respectively, and are insulated from the transparent electrode 3 by an insulating film 6 provided wider than the conductive patterns. Furthermore, when the liquid crystal 7 is not driven, light can enter from both sides of the optical sensor, but when the liquid crystal 7 is driven as shown in FIG. It is incident only from the direction. In this embodiment, a liquid crystal is sealed over the entire surface of the optical sensor to control the incident light to the front light receiving element, but as shown in FIG. It is also possible to provide a structure in which a transparent electrode is provided and only a portion of the liquid crystal 7 is sealed to control incident light.

また、本実施例では、入射光を遮断する物質と
して液晶を用いた場合につき詳述したが、液晶の
替わりにPLZT等の誘電体材料を用いて入射光を
遮断することも可能である。
Further, in this embodiment, the case where liquid crystal is used as the material for blocking incident light has been described in detail, but it is also possible to use a dielectric material such as PLZT instead of liquid crystal to block incident light.

以上の如き、透光性を有する光センサは、例え
ば露出を自動制御するカメラの測光用センサとし
て用い得る。第7図は、その使用実施例を示す模
式図であつて、光センサを、フアインダ12近傍
のカメラ内側に、液晶の駆動によつて入射光が遮
ぎられる素子カバー用基板側をフアインダ12に
対接して設ける。レンズ13を透過した光は、反
射鏡14にてカメラ上部へ反射され、更にカメラ
上部にて反射され、反射光は透光型光センサ10
を透過し、その結像はフアインダ12から視認可
能となる。次に撮影の適切な露出を決定するため
に、光センサの液晶が駆動されてフアインダ12
からの不要な入射光が遮られ、被写体側からの入
射光量のみが測定される。光センサ10へ入射し
た光は、その光量に応じて光電変換された後、増
幅器15にて増幅され、その値に基づき適切な露
出が決定される。従つて、カメラの機構上、フア
インダ近傍に測光素子が配される露出自動制御の
カメラにおいて、フアインダからの不要な入射光
を遮ぎることによつて、所要の入射光量のみが測
定でき、正確な露出の決定が可能となる。
A light-transmitting optical sensor as described above can be used, for example, as a photometric sensor for a camera that automatically controls exposure. FIG. 7 is a schematic diagram showing an example of its use, in which the optical sensor is placed inside the camera near the viewfinder 12, and the element cover substrate side, where incident light is blocked by driving the liquid crystal, is placed in the viewfinder 12. Provided facing each other. The light transmitted through the lens 13 is reflected to the upper part of the camera by the reflecting mirror 14, and further reflected by the upper part of the camera, and the reflected light is transmitted to the translucent optical sensor 10.
, and its image becomes visible from the viewfinder 12. Next, in order to determine the appropriate exposure for photographing, the liquid crystal of the optical sensor is driven to the viewfinder 12.
Unnecessary incident light from the subject is blocked, and only the amount of incident light from the subject side is measured. The light incident on the optical sensor 10 is photoelectrically converted according to the amount of light, then amplified by the amplifier 15, and appropriate exposure is determined based on the value. Therefore, in cameras with automatic exposure control in which a photometric element is placed near the viewfinder due to the mechanism of the camera, by blocking unnecessary incident light from the viewfinder, only the required amount of incident light can be measured, making it possible to accurately measure the amount of incident light. Exposure can be determined.

また、本実施例では、受光素子5を透明絶縁基
板1の表面に形成する構成としたが、非透明の絶
縁基板表面に受光素子を形成した光センサであつ
ても、同様の効果が得られる。
Further, in this embodiment, the light receiving element 5 is formed on the surface of the transparent insulating substrate 1, but the same effect can be obtained even in an optical sensor in which the light receiving element is formed on the surface of a non-transparent insulating substrate. .

〔効果〕〔effect〕

本考案のシヤツタ機構を有する光センサは、シ
ヤツタ機構駆動用の透明電極の表面に受光素子を
形成して、透光性基板の両面エツチングを不要と
し、さらにシヤツタ機構駆動用の他方の電極を設
けたガラス等の基板に受光素子を保護する機能も
持たせて、樹脂による保護コートを不要とするこ
とによつて、製造工程の簡略化を実現するといつ
た優れた効果を奏する。
The optical sensor with a shutter mechanism of the present invention has a light-receiving element formed on the surface of a transparent electrode for driving the shutter mechanism, eliminating the need for double-sided etching of a transparent substrate, and further providing the other electrode for driving the shutter mechanism. By providing a substrate made of glass or the like with a function to protect the light-receiving element and eliminating the need for a protective coat of resin, an excellent effect is achieved in which the manufacturing process is simplified.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本考案に係る光センサの部分断面図、
第2図は略示平面図、第3図はその部分拡大図、
第4図はシヤツタ機構の実施態様図、第5図は別
のシヤツタ機構実施態様図、第6図は従来の光セ
ンサの部分断面図、第7図は本考案に係る光セン
サをカメラに使用した実施態様図である。 1,2……透光性絶縁基板、3,4……透明電
極、5……受光素子、6……絶縁膜、7……液
晶、51……受光素子用電極、52……膜状光電
素子層、53……受光素子用電極。
FIG. 1 is a partial cross-sectional view of the optical sensor according to the present invention.
Fig. 2 is a schematic plan view, Fig. 3 is a partially enlarged view thereof,
Fig. 4 is an embodiment of a shutter mechanism, Fig. 5 is an embodiment of another shutter mechanism, Fig. 6 is a partial cross-sectional view of a conventional optical sensor, and Fig. 7 is an optical sensor according to the present invention used in a camera. FIG. DESCRIPTION OF SYMBOLS 1, 2... Transparent insulating substrate, 3, 4... Transparent electrode, 5... Light receiving element, 6... Insulating film, 7... Liquid crystal, 51... Electrode for light receiving element, 52... Film photoelectric Element layer, 53...electrode for light-receiving element.

Claims (1)

【実用新案登録請求の範囲】 1 裏面導電膜、非晶質半導体層、透明導電膜を
積層した受光素子を絶縁基板の一面側に配置し
てなる光センサにおいて、 前記絶縁基板の一面に設けられた電極と、 該電極の表面に配された絶縁体と、 前記電極から適長離隔して配された透明電極
と、 前記電極と透明電極との間に封入されてお
り、電極と透明電極とによつて駆動される遮光
物質とを備え、 前記受光素子が前記絶縁基板に絶縁体を介し
て配置されたことを特徴とする光センサ。 2 前記遮光物質として液晶を用いてなる実用新
案登録請求の範囲第1項記載の光センサ。 3 前記遮光物質として誘電体を用いてなる実用
新案登録請求の範囲第1項記載の光センサ。
[Claims for Utility Model Registration] 1. An optical sensor in which a light-receiving element in which a back conductive film, an amorphous semiconductor layer, and a transparent conductive film are laminated is disposed on one surface of an insulating substrate, including: an insulator disposed on the surface of the electrode; a transparent electrode disposed at an appropriate distance from the electrode; and a transparent electrode sealed between the electrode and the transparent electrode; A light-shielding substance driven by a light-shielding substance, wherein the light-receiving element is disposed on the insulating substrate with an insulator interposed therebetween. 2. The optical sensor according to claim 1, which uses liquid crystal as the light-shielding material. 3. The optical sensor according to claim 1, which uses a dielectric material as the light shielding material.
JP2179787U 1987-02-17 1987-02-17 Expired - Lifetime JPH0524195Y2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2179787U JPH0524195Y2 (en) 1987-02-17 1987-02-17

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2179787U JPH0524195Y2 (en) 1987-02-17 1987-02-17

Publications (2)

Publication Number Publication Date
JPS63129835U JPS63129835U (en) 1988-08-24
JPH0524195Y2 true JPH0524195Y2 (en) 1993-06-21

Family

ID=30818571

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2179787U Expired - Lifetime JPH0524195Y2 (en) 1987-02-17 1987-02-17

Country Status (1)

Country Link
JP (1) JPH0524195Y2 (en)

Also Published As

Publication number Publication date
JPS63129835U (en) 1988-08-24

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