GB1316867A - Method for producing single crystal metallic thin films - Google Patents

Method for producing single crystal metallic thin films

Info

Publication number
GB1316867A
GB1316867A GB3137470A GB3137470A GB1316867A GB 1316867 A GB1316867 A GB 1316867A GB 3137470 A GB3137470 A GB 3137470A GB 3137470 A GB3137470 A GB 3137470A GB 1316867 A GB1316867 A GB 1316867A
Authority
GB
United Kingdom
Prior art keywords
sapphire
single crystal
thin films
metallic thin
producing single
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB3137470A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of GB1316867A publication Critical patent/GB1316867A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C30B23/06—Heating of the deposition chamber, the substrate or the materials to be evaporated
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/01—Manufacture or treatment
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S505/00—Superconductor technology: apparatus, material, process
    • Y10S505/80—Material per se process of making same
    • Y10S505/815—Process of making per se
    • Y10S505/816—Sputtering, including coating, forming, or etching

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

1316867 Sputtering metal films INTERNATIONAL BUSINESS MACHINES CORP 29 June 1970 [30 June 1969] 31374/70 Heading C7F Single crystal metal films are sputtered on to a substrate having a negative bias R.F. or D.C. voltage and a temperature of 200 to 600‹C, the first 5 to30 minutes of sputtering being on to amoveable shutter 38. Ionizable gas, e.g., argon is introduced through opening 32. A shield 36 surrounds the target. A Ti filament 42 is used to gather active gas e.g., oxygen. In an R.F. apparatus, a source 10 provides R.F. voltage between target 12 and substrate 14 which is grounded. Coils 28 provide a magnetic field. In examples, Nb is deposited on sapphire or MgO, Nb-Ti on sapphire, Mo on sapphire, and Al on MgO, mica, and sapphire.
GB3137470A 1969-06-30 1970-06-29 Method for producing single crystal metallic thin films Expired GB1316867A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US83773869A 1969-06-30 1969-06-30

Publications (1)

Publication Number Publication Date
GB1316867A true GB1316867A (en) 1973-05-16

Family

ID=25275276

Family Applications (1)

Application Number Title Priority Date Filing Date
GB3137470A Expired GB1316867A (en) 1969-06-30 1970-06-29 Method for producing single crystal metallic thin films

Country Status (5)

Country Link
US (1) US3726776A (en)
JP (1) JPS4911145B1 (en)
DE (1) DE2021868B2 (en)
FR (1) FR2052397A5 (en)
GB (1) GB1316867A (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL7902247A (en) * 1978-03-25 1979-09-27 Fujitsu Ltd METAL INSULATOR SEMICONDUCTOR TYPE SEMICONDUCTOR DEVICE AND PROCEDURE FOR MANUFACTURING IT.
US5985115A (en) * 1997-04-11 1999-11-16 Novellus Systems, Inc. Internally cooled target assembly for magnetron sputtering
TWI381058B (en) * 2007-07-03 2013-01-01 Univ Nat Chunghsing A method for preparing a metal nitride film

Also Published As

Publication number Publication date
FR2052397A5 (en) 1971-04-09
DE2021868A1 (en) 1971-01-14
DE2021868B2 (en) 1979-12-13
US3726776A (en) 1973-04-10
JPS4911145B1 (en) 1974-03-15

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee