GB1338370A - Method of fabricating nitrides of gallium and indium - Google Patents

Method of fabricating nitrides of gallium and indium

Info

Publication number
GB1338370A
GB1338370A GB4015872A GB4015872A GB1338370A GB 1338370 A GB1338370 A GB 1338370A GB 4015872 A GB4015872 A GB 4015872A GB 4015872 A GB4015872 A GB 4015872A GB 1338370 A GB1338370 A GB 1338370A
Authority
GB
United Kingdom
Prior art keywords
substrate
gallium
indium
target
nitrides
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB4015872A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of GB1338370A publication Critical patent/GB1338370A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021—Reactive sputtering or evaporation
    • C23C14/0036—Reactive sputtering

Abstract

1338370 Sputtering gallium and indium nitrides INTERNATIONAL BUSINESS MACHINES CORP 30 Aug 1972 [28 Sept 1971] 40158/72 Heading C7F Gallium or indium nitride is R.F. sputtered on to a substrate 15 by sputtering from a Ga or In target in a nitrogen plasma. The substrate may be given a D.C. or A.C. bias, and an impedance matching circuit 9, 11, 13 is used for an A.C. bias. The target holder may be a Cu disc with a diffusion barrier of Ni, Mo, W or gallium nitride between it and the In or Ga. Coils 31 provide a magnetic field perpendicular to the plane of the substrate. The target has a removable ground shield 33. A movable shutter 47 is used for a presputtering operation. A Ti sublimation pump 53 is used together, e.g. oxygen or compounds thereof. Nitrogen is admitted through a pipe 63. Argon may be used for sputter cleaning the substrate. The substrate may be sapphire silicon, fused quartz, Si C, Mo, W.
GB4015872A 1971-09-28 1972-08-30 Method of fabricating nitrides of gallium and indium Expired GB1338370A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US18440571A 1971-09-28 1971-09-28

Publications (1)

Publication Number Publication Date
GB1338370A true GB1338370A (en) 1973-11-21

Family

ID=22676735

Family Applications (1)

Application Number Title Priority Date Filing Date
GB4015872A Expired GB1338370A (en) 1971-09-28 1972-08-30 Method of fabricating nitrides of gallium and indium

Country Status (4)

Country Link
JP (1) JPS4840699A (en)
DE (1) DE2243153A1 (en)
FR (1) FR2154459B1 (en)
GB (1) GB1338370A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2180262A (en) * 1985-09-05 1987-03-25 Plessey Co Plc Forming substances by reactive sputtering
GB2181461A (en) * 1985-10-10 1987-04-23 Canadian Patents Dev Depositing semiconductor compounds by reactive sputtering
GB2182350A (en) * 1985-07-01 1987-05-13 Atomic Energy Authority Uk Sputter ion plating
GB2178061B (en) * 1985-07-01 1989-04-26 Atomic Energy Authority Uk Coating improvements

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5031028B1 (en) * 1968-08-15 1975-10-06
US3878085A (en) * 1973-07-05 1975-04-15 Sloan Technology Corp Cathode sputtering apparatus
DE3316548C2 (en) * 1983-03-25 1985-01-17 Flachglas AG, 8510 Fürth Process for coating a transparent substrate

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2182350A (en) * 1985-07-01 1987-05-13 Atomic Energy Authority Uk Sputter ion plating
GB2178061B (en) * 1985-07-01 1989-04-26 Atomic Energy Authority Uk Coating improvements
GB2182350B (en) * 1985-07-01 1989-04-26 Atomic Energy Authority Uk Coating improvements
GB2180262A (en) * 1985-09-05 1987-03-25 Plessey Co Plc Forming substances by reactive sputtering
GB2180262B (en) * 1985-09-05 1990-05-09 Plessey Co Plc Methods of forming substances on substrates by reactive sputtering
GB2181461A (en) * 1985-10-10 1987-04-23 Canadian Patents Dev Depositing semiconductor compounds by reactive sputtering
GB2181461B (en) * 1985-10-10 1989-09-27 Canadian Patents Dev Doping semiconductor compounds by reactive sputtering

Also Published As

Publication number Publication date
FR2154459A1 (en) 1973-05-11
DE2243153A1 (en) 1973-04-05
FR2154459B1 (en) 1974-08-19
JPS4840699A (en) 1973-06-14

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Legal Events

Date Code Title Description
PS Patent sealed
PCNP Patent ceased through non-payment of renewal fee